改进型帧时隙ALOHA防碰撞算法研究

为进一步提高RFID系统中电子标签防碰撞算法的识别效率,对帧时隙ALOHA防碰撞算法的性能进行分析,提出一种结合精确标签估计和二进制搜索的改进型帧时隙ALOHA算法.将识别过程分为标签估计和标签识别两个阶段,在标签估计算法中引入碰撞概率上、下限参数,并精确估计标签数量对初始帧时隙大小进行优化;在标签识别阶段,利用二进制搜索算法对时隙内的碰撞标签进行快速识别.通过对识别过程进行仿真结果表明:改进的算法改善了防碰撞性能,提高了RFID系统的标签识别效率.     

一种基于不等长时隙的射频识别防碰撞算法

该文提出了一种基于不等长时隙的射频识别(Radio Frequency Identification, RFID)动态帧时隙ALOHA (Dynamic Framed-Slotted ALOHA, DFSA)防碰撞算法。算法考虑到大量碰撞时隙和空闲时隙对系统效率的影响,采用帧内时隙长度不等的优化策略,由时隙优化参数和未读标签数确定帧长,通过优化的切比雪夫不等式法进行标签估计,并基于马尔科夫链分析标签识别过程,来实现读取周期的控制。分析和仿真结果表明,该算法比时隙优化前的DFSA算法效率更高,平均识别时间更短,标签数估计比下限值法、Schoute法和碰撞率法更准确。     

一种时间高效的易于实现的多标签射频识别技术

多标签碰撞问题严重影响射频识别RFID系统的识别效率.在研究子帧观测机制的基础上,针对常规动态帧时隙Aloha多标签防碰撞算法存在的复杂度高、时间效率低等问题,提出了一种基于子帧的动态帧时隙Aloha算法,其在识别过程中采取设定的子帧观测,运用空闲与碰撞时隙数的关系估计剩余标签数,再依据预估的结果优化设置新的帧长,显著提升了大容量多标签RFID系统的识别效率.该算法的运算复杂度低、计算量小,易于在常规RFID读写器中实现,工程应用前景广阔.仿真结果表明：同传统的Aloha类防碰撞算法相比,提出的算法具有复杂度低、稳定好、识别效率高等优势.     

一种改进的动态帧时隙ALOHA算法

射频识别系统的最大缺点之一是当标签碰撞时的低标签识别效率。传统的射频识别防碰撞算法在标签数量庞大时,解读标签所需的时隙数会成倍增加。为了解决这一问题,文章提出一种改进的动态时隙ALOHA算法,它根据标签数调整每帧中的时隙数,以使系统能以高吞吐量工作,缩短读取时间,提高了整个系统的效率。     

分组自适应分配时隙的RFID防碰撞算法研究

为了解决射频识别(Radio Frequency IDentification,RFID)系统中的多标签防碰撞问题,在分析帧时隙ALOHA算法的基础上,提出一种基于分组自适应分配时隙的RFID防碰撞算法(GAAS).首先让阅读器对标签随机所选的时隙进行扫描统计,并将其发送给每一个标签,标签再进行相应地时隙调整,使阅读器跳过空闲时隙和碰撞时隙,自适应地分配有效时隙,进而对标签进行快速识别.当未识别标签数比较大时,算法采用分组以及动态调整帧长等策略,以减少时隙处理的时间.仿真结果表明:GAAS算法提高了系统的识别效率和稳定性,降低了传输开销.特别是当标签数超过1000时,该算法的吞吐率仍保持在71%以上,比传统的帧时隙ALOHA-256算法和分组动态帧时隙ALOHA算法的系统效率分别提高了300%和97.2%.     

基于连续时隙预测的帧时隙Aloha防碰撞算法

在射频识别（Radio Frequency Identification,RFID）系统中,针对EPC C1G2协议的Q算法中Q值调整的不灵活性及对空闲时隙和碰撞时隙处理上的缺点,提出了一种基于连续时隙预测的帧时隙Aloha防碰撞算法.通过马尔可夫时隙状态模型,分析不同连续时隙状态下帧长与标签数的关系,提出连续时隙预测机制和自适应散列方案.有效地减少了无效时隙的出现,实现了读取阶段的时隙多数为成功时隙.仿真结果表明,本文提出的算法能够灵活地调整帧长,有效提高吞吐率,降低传输延时和开销,为物联网（Internet of Things,IoT）的海量数据信息完整性问题提供了合理的解决方案.     

基于标签截断的分组防碰撞算法

防碰撞算法是RFID标签识别的核心算法之一。文章在EPC Gen2协议的基础上,提出一种新的基于标签截断的分组防碰撞算法。实验表明,该算法有效缩小了在读写器读取范围内所有标签的读取总时隙,读取标签的效率得到了明显提高。     

一种改进的RFID标签防碰撞算法

在已有RFID标签防碰撞ALOHA算法基础上,提出了一种改进的带中断机制的动态帧时隙ALOHA(ⅡDFSA)算法,一方面通过优化设置系统效率临界因子和参考碰撞时空比,比较系统效率判断是否改变帧的大小;另一方面通过比较碰撞时空比来判断帧大小的改变方向,从而有效降低标签识别时间,提高识别效率。计算机仿真结果表明,与传统的动态帧时隙ALOHA算法相比,当标签数低于200和高于800时,采用ⅡDFSA算法可以有效降低系统总识别时间,提高系统效率。当标签数介于200~800之间时,与传统的动态帧时隙ALOHA算法相当。     

可并行识别的分组动态帧时隙ALOHA标签防碰撞算法

该文针对现有动态帧时隙ALOHA标签防碰撞算法的系统吞吐率低、算法效率低等问题,提出一种可并行识别的分组动态帧时隙ALOHA(PIGDFSA)标签防碰撞算法。该文以实验为基础,探索了待识别标签数、标签分组数、帧长对系统吞吐率与标签碰撞率的影响,研究了提升系统吞吐率与降低标签碰撞率的策略与方法。结合射频识别(RFID)的多天线系统,引入FastICA技术,从而实现碰撞时隙重新定义,并以此为基础,利用未识别标签数目自适应确定分组数与帧长。仿真结果表明:PIGDFSA算法在标签数达到2000时,算法吞吐率仍能稳定在92%以上,与FSA-256, GDFSA, BSDBG等算法相比具有更高的算法吞吐率,更少的空隙时隙,更高的算法效率。     

BIS：一种降低空时隙开销的RFID防碰撞算法

提出了一种优化的基于时隙ALOHA的随机型防碰撞算法--BIs算法.该算法在帧开始前扫描空时隙的位置,并结合标签估算算法实现对帧长的动态调度,最大限度地减少空时隙的时间开销,以实现提高多标签读取效率的目标.仿真结果表明,在不考虑误码的理想情况下,采用该算法的系统效率最高可以达到81%,高于ALOHA算法的理想系统效率,识别速度与一般的时隙ALOHA算法和二进制算法相比有较大幅度的提高.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

中国建立EB级存储实验室,致力云计算应用(英文)

正With the support of 863 programs,Sugon Information Industry Co.,Ltd.,set up a dawning EB-class storage laboratory to address massive data storage requirements and largescale cloud computing demonstration applications.The Dawning EB-class cloud storage system adopts advanced fault-tolerant architecture,efficient data fault-tolerant algorithms with user authentication and data encryption policies to deal with the"lost""wrong"and"stolen"problems of data for ensuring the reliability and safety of the EB-class storage system in the public network application environments.The Dawning EB-class Storage Laboratory taking advan-