共查询到18条相似文献,搜索用时 156 毫秒
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从征 《激光与光电子学进展》1999,36(5):30-31
椭圆形电泵浦微腔激光器具有以前报导的微盘激光器的优点,如激活介质的高效率,同时克服了从腔内耦合出可用光的某些困难。这种激光器也以特殊的“弓条形”模(而不是圆形微盘激光器的“回音廊”模)工作。这种最近由朗讯-贝尔实验室、耶鲁大学和德国马普物理所Clai... 相似文献
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采用湿法化学腐蚀在气洙MBEInGaAsP多量子阱材料上制作了微盘型激光器,直径8μm的微盘激光器表现出很好的单模激射特性,阈值泵浦功率为170μW,激射线宽为1.5nm.以微腔激光器的宽激射线宽作了初步分析。 相似文献
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利用溶液法制备的钙钛矿微/纳米晶虽然可以得到性能良好的微型激光器,但是其所需生长周期较长且缺乏重复性。为了解决这一问题,提出了利用飞秒激光直写技术制备高重复性钙钛矿微盘激光器的新方法。首先使用双源共蒸的方法在石英玻璃衬底上沉积FAPbI3钙钛矿薄膜,然后采用飞秒激光直写技术在FAPbI3钙钛矿薄膜上制备不同直径的微盘激光器,最后测试其激光性能。实验结果表明,随着微盘直径的增加,激光阈值呈线性增长,最终可实现约4.7μJ/cm2的极低激光阈值。利用飞秒激光直写技术制备的钙钛矿微盘激光器具有出色的激光性能,且重复性高,因此该技术非常适用于批量制备钙钛矿微盘激光器,为其产业化应用提供了可能。 相似文献
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为了实现半导体微盘磁光器的单模面发射,设计了一种以InGaN多量子阱为有源层,CaN外延层为覆盖层的半导体微盘激光器。通过对GaN覆盖层进行图形刻蚀,可以对不同的角模式进行有选择的增益,由此实现选模。用有效增益因子加电介质盘的模型对实际微盘结构进行简化,并根据此模型计算微盘外的远场分布,并进上步计算有效增益因子。分析表明,这种结构能够实现m=1角模式的面发射。 相似文献
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为了降低微盘腔半导体激光器工作时有源区的温度,提升封装的可靠性,基于Ansys Workbench有限元分析分别对AlN,WCu10,SiC,石墨烯,以及CVD金刚石过渡热沉封装的蜗线型微盘腔半导体激光器进行了热特性分析,得到了器件工作时的温度分布以及热应力、热应变分布.结果显示,SiC封装器件的有源区温度较AlN和WCu10封装器件分别降低了 2.18,3.078 C,并在五种过渡热沉封装器件中表现出最低的热应力,器件热应变最小.SiC过渡热沉封装可以有效降低微盘腔半导体激光器工作时的有源区温度,同时减少封装应力与器件应变,从而提高器件的散热能力和可靠性.计算结果对半导体激光器单管散热及阵列集成散热均有指导意义. 相似文献
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高性能的片上纳米激光器对通信、传感以及量子等领域的发展有着至关重要的意义。纳米激光器中高的光学限制因子可以保证更大的模式增益,实现更低的激光器阈值。首先阐明了借助物理气相沉积和原子层沉积制备Si_(3)N_(4)/WS_(2)/Al_(2)O_(3)三明治型纳米激光器阵列的工艺流程;构建了该纳米激光器的仿真模型,在仿真模型中对实际结构进行了简化并分析了Al_(2)O_(3)覆盖层厚度T、Si_(3)N_(4)微盘直径D和厚度H对光学限制因子的影响。光学限制因子随着Al_(2)O_(3)覆盖层T以及Si_(3)N_(4)微盘直径D的增加有先增加后减小的趋势,Si_(3)N_(4)微盘厚度H的减小也可以显著增加激光器的光学限制因子;最后展示了器件的荧光以及扫描电子显微镜的表征结果。该工作为集成光学芯片中可规模制备的高性能纳米激光器打下了良好基础。 相似文献
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从征 《激光与光电子学进展》2000,37(3):18-21
1946年 ,E.Purcell[1 ]首次提出 ,通过把原子置于具有电磁波长尺度的低损耗腔中 ,能显著改变原子激发态的自发发射。最近 ,随着半导体激光器的出现和晶体生长及制造工艺的改进 ,对具有自发发射控制[2~ 4] 的半导体光学微腔的设计制作已有日益增长的兴趣。垂直腔面发射激光器 (VCSEL) [5 ]是具有光波长尺度的首批半导体微腔之一 ,其光约束于两个外腔生长分布布拉格反射镜之间。微盘激光器 [6 ]是另一种微腔激光器件 ,它利用高折射率微盘边缘的全内反射形成低损耗的回音廊模式。这里介绍一类微腔激光器的初步实验结果 ,其光被限制在纳米制… 相似文献
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有机-无机杂化钙钛矿具有载流子扩散长度长、发光效率高等特点,是一种性能优良的半导体材料,也是一种极具潜力的激光增益介质,受到了光伏、激光等多个领域的广泛关注.概述了利用有机-无机杂化钙钛矿作为增益介质研发的薄膜型多晶钙钛矿激光器、单晶钙钛矿激光器以及微盘钙钛矿激光器的研究进展.介绍了具有优异的电学性能和光学性能的有机-无机杂化钙钛矿制备方法,分析了影响有机-无机杂化钙钛矿激光器性能的主要因素.结果表明,相对于其他类型的激光器,单晶钙钛矿纳米线结构具有更低的激光阈值、更窄的光谱宽度,是实现纳米激光的最佳选择之一.此外,针对有机-无机杂化钙钛矿激光器目前存在的钙钛矿材料的降解、实现电泵浦激光所需电流密度高等问题,对今后钙钛矿激光器的研究重点和发展趋势进行展望. 相似文献
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Cascaded InGaAsP/InP microdisk resonators as optical filters are fabricated by deep dry-etching. Compared with single microdisk resonators, these higher-order filters show steeper rolloffs and flatter passbands. The bandwidth ratios of 15 to 3dB for the single, three and five cascaded microdisk resonator filters are ~2.4, 1.4 and 1.2 相似文献
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Van Campenhout J. Liu Liu Romeo P.R. Van Thourhout D. Seassal C. Regreny P. Di Cioccio L. Fedeli J.-M. Baets R. 《Photonics Technology Letters, IEEE》2008,20(16):1345-1347
We report on the performance of a compact multi- wavelength laser (MWL) source heterogeneously integrated with and coupled to a silicon-on-insulator (SOI) waveguide circuit. The MWL consists of four InP-based microdisk lasers, coupled to a common SOI wire waveguide. The microdisk lasers operate in continuous-wave regime at room temperature, with a threshold current around 0.9 mA and a waveguide-coupled slope efficiency of up to 8 muW/mA, for a microdisk diameter of 7.5 mum. The output spectrum contains four laser peaks uniformly distributed within the free-spectral range of a single microdisk. While thermal crosstalk is negligible, laser peak output powers vary up to 8 dB for equal microdisk drive currents, as a result of loss due to coupling with higher order modes supported by the 1-mum-thick microdisks. This nonuniformity could be eliminated by reducing the microdisk thickness. 相似文献
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O’Dae Kwon D.K. Kim J.H. Yoon Y.C. Kim Y.H. Jang M.H. Shin 《Microelectronics Journal》2009,40(3):570-573
A new whispering cave mode (WCM), a three-dimensional (3D) case of Lord Rayleigh's 2D whispering gallery modes, based upon 3D total internal reflection is presented, where GaAs quantum well (QW) near-vertical microdisk resonators exhibit a strong carrier-photon coupling for the QW carriers located in the Rayleigh band, generating 2D-to-1D carrier phase transitions of photonic quantum ring (PQR). It is a ‘photonic’ quantum corral effect (PQCE), whose simulation work produces a tangled web pattern of imminent recombinant carriers in picoseconds timescale. The PQCE is responsible for the ultralow threshold currents below 300 nA for a single mode GaAs PQR laser, and a prototype GaN PQR laser with a threshold near and below 1 μA. 相似文献
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Djordjev K. Seung-June Choi Sang-Jun Choi Dapkus P.D. 《Photonics Technology Letters, IEEE》2002,14(3):331-333
High-quality factor vertically coupled InP microdisk resonators have been fabricated. Wafer bonding techniques have been used as a main approach to enable this three-dimensional structure. The devices exhibit smooth sidewalls, single mode operation, and high-quality factors in excess of 7000 相似文献
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《Photonics Technology Letters, IEEE》2006,18(20):2096-2098
Optical sensors are attractive for integrated chip-scale sensor systems. In this letter, integrated microdisk sensors have been fabricated and characterized for five different D-glucose concentrations in deionized water. The microdisk sensor reported is in an orthogonal configuration, reducing the sensor size toward chip-scale sensor applications. The measured wavelength shift in the resonant peak of the microdisk sensors has a linear response as a function of D-glucose concentration. The estimated sensitivity (defined by$Delta lambda_ resonant$ /wt%$_ D-glucose$ ) of the fabricated microdisk sensor for the D-glucose solution was 0.12[nm/wt%] based on the slope of the linear regression line from the measured results. 相似文献
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N. V. Kryzhanovskaya S. A. Blokhin A. G. Gladyshev N. A. Maleev A. G. Kuz’menkov E. M. Arakcheeva E. M. Tanklevskaya A. E. Zhukov A. P. Vasil’ev E. S. Semenova M. V. Maximov N. N. Ledentsov V. M. Ustinov E. Stock D. Bimberg 《Semiconductors》2006,40(9):1101-1104
Under study are temperature dependences of laser characteristics of a GaAs/(AlGa)xOy microdisk of 6 μm in diameter, fabricated using optical lithography, ion milling with a beam of Ar+ ions, and selective oxidation of the Al0.97Ga0.03As layer which forms the microdisk base. In As/InGaAs QDs are used as the microdisk active region. Room-temperature lasing in the 1.3-μm range is observed, with the threshold optical pumping power of 160 μW. The quality factor of microdisk modes is about 104. 相似文献