CuAl_(1.6)Fe_(0.4)O_4/凹凸棒石复合材料的制备及可见光催化性能研究

采用溶胶-凝胶法制备了CuAl1.6Fe0.4O4尖晶石,以凹凸棒石(PG)为载体,合成了CuAl1.6Fe0.4O4/凹凸棒石复合材料。采用X射线粉末衍射(XRD)、扫描电镜(SEM)以及紫外-可见(UV-Vis)吸收光谱测试技术对样品的结构、形貌、吸光性能进行了表征和分析,同时以500W氙灯为光源,亚甲基蓝为降解对象,测试了其可见光催化活性,并详细考察了尖晶石负载量对其光催化性能的影响。实验结果表明,当尖晶石负载量为40%时,其可见光降解性能最佳,最佳降解率达到了98.55%。     

制备铁氧体纳米粒子前躯体的气泡液膜法

提出了采用气泡液膜反应器,将金属离子Mn+与OH-等沉淀剂在气泡液膜中进行共沉淀反应,制备铁氧体纳米粒子前躯体的气泡液膜法.制得的前躯体可精确地保持各金属组分的配料摩尔比,且分布均匀、粒径尺寸和形貌可控.用气泡液膜法制得了Mn0.25 Zn0.23 Fe1.04O2.04,Ni0.6Zn0.4Fe2O4和Fe3O4铁氧...     

Ba_xNi_(1–x)La_yFe_(12–y)O_(19)铁氧体的制备与磁性能研究

首先利用溶胶-凝胶法制备了BaxNi1–xFe12O19(x=0.2,0.4,0.6,0.8)样品,通过热重-差示扫描量热仪(TG-DSC)、X射线衍射仪(XRD)和振动试样磁强计(VSM)分析,确定了最佳煅烧温度和最佳Ba-Ni摩尔比。然后利用同样的方法制备了Ba0.6Ni0.4LayFe12–yO19(y=0,0.1,0.3,0.5)样品,利用场发射扫描电镜(FESEM)、XRD和VSM对产物进行表征分析。结果表明Ni2+取代Ba2+,进入其晶格内部,改变了铁氧体的磁性能。La3+的加入改变了铁氧体的矫顽力Hc、饱和磁化强度Ms和剩余磁化强度Mr。当y=0.3时,其Ms和Mr达到最大值,分别为51.0 A.m2/kg和32.3 A·m2/kg。     

共沉淀法制备锰锌铁氧体微粉的研究

以硫酸亚铁、硫酸锰和硫酸锌为原料,采用碳酸盐共沉淀法制备了Mn1–xZnxFe2O4(x=0,0.2,0.4,0.5和0.6)铁氧体微粉。通过TGA-DSC、XRD和SEM等测试手段,分析其物相、微观结构和形貌,并用振动样品磁强计(VSM)测量其室温磁滞回线,重点探讨了锰锌铁氧体前驱粉在热处理过程中发生的反应。磁性能测试表明,随着Zn2+含量的增加,锰锌铁氧体微粉的比饱和磁化强度先增加后降低,当x(Zn2+)=0.2时,微粉的比饱和磁化强度最大,为84.24A·m2·kg–1。     

Ca0.4Sr0.6Bi4Ti4O15纳米晶粉体的溶胶-凝胶法制备

采用溶胶-凝胶法和预碳化处理工艺制备了层状钙钛矿结构的Ca0.4Sr0.6Bi4Ti4O15纳米晶粉体。借助DSC-TG、XRD和SEM等分析表征了Ca0.4Sr0.6Bi4Ti4O15纳米晶粉体前驱体的热反应过程、粉体的物相结构及微观形貌。结果表明,对前驱体进行预碳化处理得到纳米晶粉体,其分散性得到明显的改善,800~850℃热处理的纳米晶粉体呈单一的层状钙钛矿结构,粉体为球形颗粒,大小均匀,分散性良好,粒径约在100 nm。     

废旧锌锰电池制备Cu掺杂Mn-Zn铁氧体

以硝酸溶解废旧碱性锌锰电池所得的溶液为原料,以酒石酸为凝胶剂,采用sol-gel法制备出一系列Cu掺杂Mn-Zn铁氧体(Mn0.6–x/2Zn0.4–x/2CuxFe2O4,x=0.1,0.2,0.3和0.4)。经XRD、VSM测试,结果表明:Cu掺杂不仅没有改变Mn-Zn铁氧体的相结构,而且有利于尖晶石结构的形成;Cu掺杂后Mn-Zn铁氧体的Ms、Mr和Hc的变化趋势,都是先增大后减小,最适宜的掺杂量x为0.1。此时,Ms为2.66×105A/m,Mr为5.73×104A/m,Hc为1.6/π×104A/m。     

废旧镍氢电池在柠檬酸中的溶解条件及Ni_(0.5)Co_(0.5)Fe_2O_4的制备研究

研究了废旧镍氢电池正极材料在柠檬酸中的溶解条件。采用单因素和正交试验相结合的方法分析柠檬酸初始浓度、液固比、溶解温度、溶解时间等对钴、镍的溶解率的影响。实验结果表明:当柠檬酸浓度为2 mol/L,液固比(质量比)8:1,溶解温度90℃,溶解时间50 min,镍钴的溶解率最高。在最佳溶解条件下,采用微波水热法制备出性能较好的球形纳米级Ni0.5Co0.5Fe2O4,其磁性参数为:饱和磁化强度为50.312 A·m2/kg,剩余磁化强度15.306 A·m2/kg,矫顽力为0.052 726 T。     

B位非化学计量比对0.6BCN-0.4BZN陶瓷性能的影响

采用传统固相反应法,制备了Ba(Co0.6Zn0.4)1/3Nb2/3O3(0.6BCN-0.4BZN)微波介质陶瓷。系统研究了Ba(Co0.6Zn0.4)(1/3+x)Nb2/3O3陶瓷中B位(Zn,Co)离子的非化学计量比(x=-0.015,-0.009,-0.003,0,0.003,0.009,0.015)对该微波介质陶瓷性能的影响。结果表明:少量的B位离子缺量,可以促进烧结的致密化。x为-0.009时所制陶瓷密度最大,达到理论密度的99%以上。在1400℃下烧结20h,可以获得εr=35.35,Q.f=40787GHz(f=5.180GHz),τf=-3×10-6/℃的0.6BCN-0.4BZN陶瓷。     

废旧镍氢电池溶胶–凝胶法制备Ni_(0.5)Co_(0.5)Fe_2O_4的研究

以硫酸溶解废旧镍氢电池所得溶液为原料,采用溶胶–凝胶法制备出纳米晶镍钴铁氧体。借助于XRD、TG和VSM对产品的相结构和磁性能进行研究,并进一步探讨制备过程中的影响因素。结果表明,溶胶–凝胶法制备镍钴铁氧体的适宜条件为:柠檬酸与金属离子总量的摩尔比1:1,溶液的pH值7.0,煅烧温度850℃,煅烧时间3 h。该条件下所制得产品的剩余磁化强度为13.635 A.m2/kg,矫顽力为32.5 kA/m,饱和磁化强度为50.713 A.m2/kg。     

锂离子电池正极材料LiNi_(0.4)Co_(0.2)Mn_(0.4)O_2的合成及电化学性能

采用碳酸盐共沉淀法合成了Ni0.4Co0.2Mn0.4CO3前驱体,然后以Ni0.4Co0.2MnCO3和LiOH为原料,合成出了层状锂离子电池正极材料LiNi0.4Co0.2Mn0.4O2.通过XRD,SEM和电化学测试对LiN0.4Co0.2Mn0.4O2材料的结构、形貌及电化学性能进行了测试和表征.结果表明,800℃下烧结12 h所得到的样品,以0.2 c放电,其首次放电容量151 mAh·g-1,循环30次后容量为138 mAh·g-1,电化学性能好.     

0.4-V bulk-driven differential-difference amplifier

A new solution for an ultra-low-voltage, low-power, bulk-driven fully differential-difference amplifier (FDDA) is presented in the paper. Simulated performance of the overall FDDA for a 50 nm CMOS process and supply voltage of 0.4 V, shows dissipation power of 31.8 μW, the open loop voltage gain of 58.6 dB and the gain-bandwidth product (GBW) of 2.3 MHz for a 20 pF load capacitance. Despite the very low supply voltage, the FDDA exhibits rail-to-rail input/output swing. The circuit performance has also been tested in two applications; the differential voltage follower and the second-order band-pass filter, showing satisfactory accuracy and dynamic range.     

Studies of the Room‐Temperature Multiferroic Pb(Fe0.5Ta0.5)0.4(Zr0.53Ti0.47)0.6O3: Resonant Ultrasound Spectroscopy,Dielectric, and Magnetic Phenomena

Recently, lead iron tantalate/lead zirconium titanate (PZTFT) was demonstrated to possess large, but unreliable, magnetoelectric coupling at room temperature. Such large coupling would be desirable for device applications but reproducibility would also be critical. To better understand the coupling, the properties of all 3 ferroic order parameters, elastic, electric, and magnetic, believed to be present in the material across a range of temperatures, are investigated. In high temperature elastic data, an anomaly is observed at the orthorhombic mm2 to tetragonal 4mm transition, T_ot = 475 K, and a softening trend is observed as the temperature is increased toward 1300 K, where the material is known to become cubic. Thermal degradation makes it impossible to measure elastic behavior up to this temperature, however. In the low temperature region, there are elastic anomalies near ≈40 K and in the range 160–245 K. The former is interpreted as being due to a magnetic ordering transition and the latter is interpreted as a hysteretic regime of mixed rhombohedral and orthorhombic structures. Electrical and magnetic data collected below room temperature show anomalies at remarkably similar temperature ranges to the elastic data. These observations are used to suggest that the three order parameters in PZTFT are strongly coupled.     

Extraction of optimized parameters for Si0.6Ge0.4 material and SPP mode propagation through Si0.6Ge0.4/Ag/Si0.6Ge0.4 waveguide

The Lorentz model and modified Debye model （MDM） parameters forSi0.6Ge0.4 are presented. A nonlinear optimiza- tion algorithm is developed. The obtained parameters are used to determine the complex relative permittivity of Si0.6Ge0.4, and compared with the experimental data for validation. Finally the obtained parameters are used to analyze the properties of symmetric surface plasmon polariton （SPP） mode propagation in a dielectric-metal-dielectric （DMD） material constructed with silver （Ag） and Si0.6Ge0.4 for further verifying the extracted parameters.     

Annealing studies of Be-implanted GaAs0.6P0.4

Differential resistivity and Hall effect measurements and secondary ion mass spectrometry (SIMS) are used to study the annealing behavior of Be-implanted GaAs_0.6P_0.4. Results similar to that previously reported for Be-implanted GaAs are observed, including outdiffusion of Be into the Si₃N₄ encapsulant during 900‡C annealing of high dose implants. Nearly all (85–100%) of the Be remaining after a 900‡C, 1/2 hr anneal is electrically active. However, the electrical activation at low annealing temperatures (600–700‡C) is much lower in GaAs_0.6P_0.4 than in GaAs. A substantial amount of diffusion is observed even for the low fluence Be implants in GaAs_0.6P_0.4 annealed at 900‡C, indicating a greater dependence of the diffusion on defect-related effects in the ternary. This work was supported by the Joint Services Electronics Program (U.S. Army, U.S. Navy, U.S. Air Force) under Contract DAAB-07-72-C-0259, by Monsanto Company, and by the Naval Electronic Systems Command. On leave at Cornell University, Department of Electrical Engineering, Ithaca, NY 14853.     

0.4kV配网极限线损分析

配网极限线损不仅会降低供电企业的经济效益,同时还会造成不必要的能源浪费.基于此,本文首先分析了0.4kV配网极限线损的原因,在此基础上分别从技术与管理两个方面提出了降低配网极限线损的相关措施,以期对业内同仁提供一定的参考价值.     

Hg0.6Cd0.4Te的激子光电导谱

报道了Ｈｇ０．６Ｃｄ０．４Ｔｅ红外光电导谱，在本征吸收边的低能侧观察到束缚激子引起的分立光电导响应     

Enhanced Microwave Absorption of Reduced Graphene Oxide/Ni0.4Zn0.4Co0.2Fe2O4 Composite at Ultrathin Thickness

Journal of Electronic Materials - Reduced graphene oxide (rGO)-anchored Ni0.4Zn0.4Co0.2Fe2O4 (NZCF) composites were successfully synthesized by a hydrothermal process and then mixed with paraffin...     

An experimental CW klystron for generating 0.4-mm waves

A klystron frequency multiplier for 0.4-mm waves is described, generating its own driving power by means of an oscillating extended interaction buncher. By making use of the 18th to 22nd harmonics and two catcher cavity modes, the tube is tunable over a 15 percent band. The maximum output power is 1 mW CW at 673 GHz.