产业与政策：ＩＣＴ多领域为增长注入持久的动力

2014年,ICT多个领域仍将呈现活跃的单点突破、集成创新和跨界融合,为增长注入持久的动力,推动整个产业以更大的幅度加快发展.紧跟变革、发掘内需、激励创新、突破瓶颈的多项ICT产业政策更值得期待.     

电信运营商布局产业数字化的策略研究

我国已进入5G商用时代,ICT技术外溢性不断增加,运营商迎来拓展垂直行业数字化业务的重大机遇,行业数字化领域呈现着更为复杂的跨界竞争态势。通过分析国内运营商在拓展医疗、教育、金融和零售几大垂直行业市场时面临的形势,研究国际标杆运营商的经验做法,给出我国运营商布局产业数字化业务的建议。     

国内外ICT产业专利发展态势分析

随着信息技术向各个领域全面渗透,ICT产业已经被众多经济发达国家和发展中国家定为国家重点发展战略,并推动着全球的经济发展。各国不断增加在ICT领域的投入,成为科技创新的核心力量。与其他行业相比,ICT领域的专利申请量始终保持领先地位,但近些年,随着ICT技术不断成熟和受经济危机冲击影响,部分ICT领域的专利量出现小幅度下滑趋势。     

跨界时尚解密报告

原本毫不相干甚至矛盾、对立的元素,经过灵感火花和奇妙创意的交叉跨越,便由此诞生了跨界（Crossocer）的概念。现在,跨界已经成为国际间最潮流的字眼从传统到现代,从东方到西方,跨界的风潮愈演愈烈,全然代表着一种新锐的生活态度和审美方式。何为1／2跨界？在我们看来,一般意义上汽车领域的跨界是指具有不同设计特点和取向的车型。与此同时,还有—场影响更为深刻的跨界革命正在汽车产业中漫延—品牌跨界,相对于车本身的跨界设计而言品牌跨界更具时尚魅力和横向影响力,渗入到人们的其他生活领域之中。这1／2跨界充满了奥秘,也充满了妙趣,这将是你不可错过的完全汽车跨界品味报告。本次跨界,不说性能。     

广电运营商政企ICT业务探讨

在“互联网+”大背景下,广电运营商面临着前所未有的发展机遇。本文阐述了ICT业务的发展现状和趋势,结合ICT业务在智能化场合和行业定制化领域的应用,提出了一种“广电+”的ICT业务模式,并从组织架构、业务模式、合作方式、业务平台等方面入手,分析了如何开展广电特色的一站式ICT业务,为广电运营商开展ICT业务提供了参考。     

积极改革创新迎接移动互联网时代

当前,通信行业的市场环境正在发生着深刻的变化,ICT业务也在向移动互联网延伸。全球移动数据流量正保持快速增长的势头,预计2014年的移动数据流量的增幅将比2013年多75%,移动互联网业务也成为ICT业务发展的主线之一。多维度的跨界融合加剧,市场规模持续增大,对于传统运营商的挑战也在持续增大,深刻变化的市场环境也推动了传统运营商自身的升级改造。     

ICT助推“新四化” 宽带和行业信息化为主要机遇

宽带建设为ICT企业提供了最直接的发展机遇,行业信息化将推动更多新领域和新业务的诞生,赋予ICT企业新的市场和发展空间。随着信息通信技术的发展和各种网络设施的普及,ICT(Information Communication Technology)越来越多地渗透到社会生活的各个领域,其在社会经济发展中的地位也变得越来越重要,特别是在逐     

电信日聚焦农村信息高速路建设

＂要致富,先修路＂,过去这句话所指的肯定是实体道路,而在信息通信技术（下称＂ICT＂）已经高度发达的今天,这句话的含义完全可以扩展到＂信息高速路＂的建设。ICT的革新带来了第三次工业革命,这不仅极大地推动了人类社会经济、政治、文化领域的变革,而且渐渐影响着人们的生活方式。     

爱立信阐释技术至善:ICT助全社会可持续发展

ICT作为一项基础设施,在和社会经济生活的其它领域相结合后,往往能起到提高效率、降低成本,乃至促进经济发展和社会进步的作用。正因为如此,ICT领域的企业正在积极寻求ICT与其它行业相结合的方式和切入点,以期最大程度地发挥ICT技术的引擎作用。爱立信正是这样的一家公司。每年春夏之交,爱立信都会发布以技术至善(Technology for Good)为主题的《可持续性与企业责任报告》,总结过去一年在推动人人享有通信、应对能源危机及气候变化、改善人权和贫困等方面的所作所为。今年,爱立信依旧如期发布了报告。     

荷兰KPN引进外援成立ICT服务小组

日前，荷兰主导型电信运营商KPN公司宣布，将在商业部门内成立一个ICT服务小组。此举意味着该公司也将仿照英国电信等老牌运营商进军ICT领域。由于新的小组担当着向全新的专业领域进军的重任，KPN引进外援，聘用了原惠普公司负责北欧地区基础设施及服务的经理人Erikvander Meiiden担任ICT服务小组的负责人。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.