沙尘暴多重散射对激光脉冲传输的影响

根据光脉冲在离散随机介质中的传输理论,应用米氏理论和蒙特卡罗方法,研究了不同能见度情况下1.06μm脉冲激光在沙尘暴中的传输特性。得到了双频互相关函数的幅度和相位随相干带宽、脉冲时域展宽和延时随能见度的关系。结果表明,脉冲的展宽和时延随沙尘暴能见度的变化非常显著。当能见度为3~5 km时,多重散射对脉冲双频互相关函数、脉冲展宽和延时的影响已较明显。当能见度小于1 km时,对于1 ns的输入脉冲,其展宽大于10 ns,延时大于15 ns。因此,当沙尘暴的能见度较低时,必须考虑多重散射对激光脉冲频域及时域特性的影响。     

Study of Lasing Action in a Pulsed Optically Pumped D<Subscript>2</Subscript>O Gas Terahertz Laser

A modified three-level laser kinetics model for a pulsed high-power optically pumped gas terahertz laser is introduced and used to model the lasing kinetics process of a gas terahertz laser system. We, for the first time to our knowledge, investigated the time evolution dynamics process of the pump intensity, population distribution among the energy levels, pump and THz signal gain coefficient, and the THz laser intensity within the pulsed D₂O gas THz laser. High-power THz pulse with peak power of about 7.4 kW and pulse width of 145 ns at wavelength of 385 μm were obtained in the simulation, using an incident pump pulse with peak power of 2.2 MW and pulse width of 110 ns. THz pulse delay of 40 ns and pulse broadening of 35 ns were quantitatively analyzed. In addition, the experimental results for the pulse profile, pulse width, pulse broadening, pulse energy, and peak power are in agreement with the theoretical simulation results.     

Temporal Behavior of the Pump Pulses,Residual Pump Pulses,and THz Pulses for D<Subscript>2</Subscript>O Gas Pumped by a TEA CO<Subscript>2</Subscript> Laser

Temporal behavior of the pump pulses, residual pump pulses, and THz pulses for optically pumped D₂O gas molecules was investigated by using a tunable TEA CO₂ laser as the pumping source. The pulse profiles of pump laser pulses, residual pump pulses, and the THz output pulses were measured, simultaneously, at several different gas pressures. For THz pulse, the pulse delay between the THz pulse and the pump pulse was observed and the delay time was observed to increase from 40 to 70 ns with an increase in gas pressure from 500 to 1700 Pa. Both THz pulse broadening and compression were observed, and the pulse broadening effect transformed to the compression effect with increasing the gas pressure. For the residual pump pulse, the full width at half maximum (FWHM) of the main pulse decreased with increasing gas pressure, and the main pulse disappeared at high gas pressures. The secondary pulses were observed at high gas pressure, and the time intervals of about 518 and 435 ns were observed between the THz output pulse and the secondary residual pump pulse at the pressure of 1400 Pa and 1700 Pa, from which the vibrational relaxation time constants of about 5.45 and 5.55 μs Torr were obtained.     

Demonstration of a Dual-Band Mid-Wavelength HgCdTe Detector Operating at Room Temperature

In this paper, the performance of sequential dual-band mid-wavelength N⁺-n-p-p-P⁺-p-p-n-n⁺ back-to-back HgCdTe photodiode grown by metal-organic chemical vapor deposition (MOCVD) operating at room temperature is presented. The details of the MOCVD growth procedure are given. The influence of p-type separating-barrier layer on dark current, photocurrent and response time was analyzed. Detectivity without immersion D^* higher than 1 × 10⁸ cmHz^1/2/W was estimated for λ_Peak = 3.2 μm and 4.2 μm, respectively. A response time of τ_s ～ 1 ns could be reached in both MW1 and MW2 ranges for the optimal P⁺ barrier Cd composition at the range 0.38–0.42, and extra series resistance related to the processing R_Series equal to 500 Ω.     

GaSb-Based Mid-Infrared Single Lateral Mode Lasers Fabricated by Selective Wet Etching Technique with an Etch Stop Layer

We have demonstrated a wet etching technique for fabrication of narrow ridge lasers. Precise control over etching depth and ridge width was realized by introducing an etch stop layer into a laser structure and by using two etchants with different selectivity. The 6-μm-wide ridge laser emitting at 2 μm generated continuous-wave power of 70 mW at 20°C. Single lateral mode operation was observed up to 400 mA, corresponding to 8 × I _th.     

1次沙尘暴天气的消光特性研究

沙尘暴是一种特殊的自然现象.为了分析沙尘暴对可见光和红外辐射传输产生的影响,利用米散射理论,对北京地区1次沙尘暴天气下沙尘粒子在可见和红外波段的消光进行了计算,并与沙尘暴来临前的测量结果进行了对比分析,得到了沙尘粒子在这些波段的消光特性,并根据激光雷达测量的数据,对沙尘粒子在红外波段的垂直消光廓线进行了反演.这对认识沙尘暴有很大的参考价值.     

外腔式KTP光学参量振荡器的实验研究

利用脉冲氙灯抽运的Nd：YAG被动调Q激光器输出的1．06μm激光脉冲泵浦KTP光学参量振荡器,获得脉宽3ns、单脉冲能量30mJ、中心波长1568nm的信号光输出。信号光脉冲宽度（3ns）比抽运光脉冲宽度（12ns）4,得多。实验表明,随着OPO腔长的增加单脉冲输出能量减小,随着抽运光能晕的增加单脉冲输出．能晕增大,...     

紫外激光探测灰霾的后向散射回波特性

为了研究紫外激光探测灰霾的后向散射特性,基于Mie散射理论和蒙特卡洛方法,建立紫外激光后向散射探测灰霾模型,仿真灰霾条件下紫外激光的后向散射过程,并分析了不同宽度紫外激光脉冲后向散射回波的峰值功率、波峰时延和半高全宽等特征。研究结果表明,在一定灰霾浓度范围内,灰霾浓度越低,发射脉冲越窄时,激光回波畸变越明显,当发射脉冲宽度大于10 ns,激光回波近似呈高斯分布;在发射脉冲宽度相同的条件下,激光回波峰值功率和回波波峰时延随着灰霾浓度的增大而增大,回波半高全宽随着灰霾浓度的增大而减小,当发射脉冲宽度大于32 ns,回波峰值功率趋于平缓。文中研究成果可为紫外激光探测灰霾浓度及分析灰霾后向散射激光回波特性提供依据。     

Free-Standing β-Ga<Subscript>2</Subscript>O<Subscript>3</Subscript> Thin Diaphragms

Free-standing, very thin, single-crystal β-gallium oxide (β-Ga₂O₃) diaphragms have been constructed and their dynamical mechanical properties characterized by noncontact, noninvasive optical measurements harnessing the multimode nanomechanical resonances of these suspended nanostructures. We synthesized single-crystal β-Ga₂O₃ using low-pressure chemical vapor deposition (LPCVD) on a 3C-SiC epilayer grown on Si substrate at temperature of 950°C for 1.5 h. The synthesized single-crystal nanoflakes had widths of ～ 2 μm to 30 μm and thicknesses of ～ 20 nm to 140 nm, from which we fabricated free-standing circular drumhead β-Ga₂O₃ diaphragms with thicknesses of ～ 23 nm to 73 nm and diameters of ～ 3.2 μm and ～ 5.2 μm using a dry stamp-transfer technique. Based on measurements of multiple flexural-mode mechanical resonances using ultrasensitive laser interferometric detection and performing thermal annealing at 250°C for 1.5 h, we quantified the effects of annealing and adsorption of atmospheric gas molecules on the resonant characteristics of the diaphragms. Furthermore, we studied the effects of structural nonidealities on these free-standing β-Ga₂O₃ nanoscale diaphragms. We present extensive characterization of the mechanical and optical properties of free-standing β-Ga₂O₃ diaphragms, paving the way for realization of resonant transducers using such nanomechanical structures for use in applications including gas sensing and ultraviolet radiation detection.     

The Analysis of Scattering Effect for the Transmission of 1.06 μm Laser In Lower Altitude Atmosphere

On the basis of Mie’s scattering theory, the light scattering properties of atmospheric molecules and aerosol particles are analyzed and a forward-scattering model for atmospheric transmission in city outskirts is built. Through theoretical analysis and the numerical calculations to the irradiance distribution of the 1.06 μm pulse laser while transmitting in lower altitude atmosphere, we can draw some conclusions which provide usable information for the research and manufacture of off-axis scattering warning systems.     

激光辐照TiO2/SiO2薄膜损伤时间简捷测量

为了测量激光辐照薄膜的起始时间,采用了一种简洁易行的测量方法,利用波长1.06μm和1.315μm连续激光以及1.06μm单脉冲激光辐照典型薄膜光学元件,通过探测器接收激光脉冲信号和薄膜表面的激光反射信号,薄膜表面反射信号在激光辐照过程中的某个时刻发生突变,发生突变的时间对应着薄膜发生损伤的时间。得到1.06μm连续激光强度为7133W/cm2时,反射信号在0.8 s发生突变,强度为11776W/cm2时,反射信号在0.4 s发生变化;1.06μm单脉冲激光能量为48.725mJ,97.45m J,194.9m J时,薄膜损伤时间为3.63ns,2.727ns和1.09ns;1.315μm连续激光强度为2743W/cm2时,反射光信号在辐照时间t=3.44 s发生突变;强度为4128W/cm2时,薄膜表面反射光信号在辐照时间t=1.44s发生突变。结果表明,通过测量薄膜表面反射信号的突变来确定薄膜损伤的起始时间,对于薄膜抗激光加固,以及提高光电系统的抗激光能力有着重要的意义。     

Improvement in Thermoelectric Performance of SnS Due to Electronic Structure Modification Under Biaxial Strain

Ab-initio calculations using the full potential linearized augmented plane-wave technique and the semi-classical Boltzmann theory are used to study thermoelectric properties of unstrained SnS and at 1%, 2% and 3% applied biaxial tensile (BT) strain. The studies are carried out at 800 K for p-type and n-type carriers. For an increase in BT strain, lattice constants of SnS change causing changes in the band structure and increase in the band gap which in turn modifies thermoelectric coefficients. In the case of unstrained SnS, the maximum thermopower (S) obtained is 426 μV/K at carrier concentration 5.40?×?10¹⁸ cm^?3 for p-type carriers and 435 μV/K at carrier concentration 1.68?×?10¹⁸ cm^?3 for n-type carriers. At 3% applied BT strain, S is increased to 696 μV/K at carrier concentration 4.61?×?10¹⁷ cm^?3 for p-type carriers and 624 μV/K at carrier concentration 3.21?×?10¹⁷ cm^?3 for n-type carriers. The power factor (PF) increases?～?2 times at 3% BT strain as compared to unstrained SnS, and it is 6.20 mW K^?2 m^?1 for p-type carriers. For n-type carriers, PF at 3% applied BT is slightly less than the PF for unstrained SnS, which is 6.81 mW K^?2 m^?1. For both types of carriers, the figure of merit (ZT) is found to be?～?1.5 for unstrained SnS. For p-type carriers ZT is enhanced 1.4 times at 3% applied BT strain as compared to that of unstrained SnS. However, for n-type carriers, ZT does not change drastically with increase in BT strain.     

Analysis of a high frequency and wide bandwidth active polyphase filter based on CMOS inverters

An active polyphase filter capable of high frequency quadrature signal generation has been analyzed. The resistors of the classical passive polyphase filter have been replaced by transconductors, CMOS inverters (F. Tillman and H. Sjöland, Proceedings of the Norchip Conference (pp. 12–15), Nov. 2005; Analog Integrated Circuits and Signal Processing, 50(1) 7–12, 2007). A three-stage 0.13 μm CMOS active polyphase filter has been designed. Simulations with a differential input signal show a quadrature error less than 1° for the full stable input voltage range for frequencies from 6 GHz to 14 GHz. Phase errors in the differential input signal are suppressed at least three times at the output. Corner simulations at 10 GHz show a maximum phase error of 3° with both n- and pMOS slow, in all other cases the error is less than 0.75°. The three-stage filter consumes 34 mA from a 1.2 V supply. To investigate the robustness of the filter to changes in inverter delay, an inverter model was implemented in Verilog-A. Linear c _in and g _in were used, whereas g _m , c _out , and g _out were non-linear. It was found that the filter could tolerate substantial delays. Up to 40° phase shift resulted in less than 1.5° quadrature phase error at the output.     

A high performance CNFET-based operational transconductance amplifier and its applications

High performance electronic systems face several challenges in driving innovative integrated circuits when the internal transistors are scaled down below 45 nm. Carbon nanotube field effect transistors (CNFETs) are considered as excellent candidates for building energy-efficient electronic systems in the near future, due to their unique characteristics such as ballistic transport, scalability, and better channel electrostatics. In this paper, a new high performance operational transconductance amplifier (OTA) based on 32 nm CNFET devices is presented. The proposed OTA maintains a highly linear wide continuous tuning range and a wide frequency response range, enabled by splitting the linear voltage-to-current conversion and tuning two different blocks. As an application, a universal second-order transconductance-capacitor (G _m  ? C) filter realized using the OTA is introduced. Simulation results show that the CNFET-based OTA offers very a low current consumption of 2.35 μA from a ± 0.9 V power supply, achieves a bandwidth of 9.5 MHz, and has an input dynamic range of ± 0.2 V.     

激光在沙尘暴中的衰减特性研究

复杂环境中激光传输和散射特性是目标与环境光散射特性研究的基础。主要讨论了激光信号在沙尘中的传输衰减特性。根据Mie理论研究了具有一定粒径分布沙尘粒子对于激光信号的单次散射衰减特性，给出了不同分层沙尘粒子的平均散射截面、粒子平均反照率、平均不对称因子和平均相函数。利用四通量法和蒙特卡罗法研究了激光在分层沙尘大气中的多重散射和斜程传输衰减特性，并给出它们与能见度及高度的变化关系。最后，在考虑多重散射时，分别用以上两种方法数值计算了1．06μm激光在斜程沙尘大气中的衰减率，并与单次散射结果进行了比较。结果表明，能见度较低时，不考虑多重散射效应会带来较大的误差；在斜程沙尘大气激光传输时，随分层数增加，数值结果就越精确。     

高重频可调小型高功率半导体激光电源研究

为了获得高功率、高重频半导体激光脉冲,设计了一种体积小、重量轻、造价低的纳米级大功率半导体激光器驱动电源。采用改进的单稳态触发器产生窄脉冲,经放大后驱动快速开关MOSFET获得大电流窄脉冲;电源脉冲电流驱动能力0A～80A,脉冲上升时间2.8ns,下降时间3.8ns,脉冲宽度5ns～500ns范围内可调,最小5.2ns,重复频率可达200kHz。用该电源实验测试了激光波长为905nm的半导体激光器,在重复频率为10kHz时,激光脉冲峰值功率达到70W以上。结果表明,采用窄脉冲驱动MOSFET可以得到高重复频率10ns以内的大电流窄脉冲,可以驱动大功率半导体激光器,若驱动100A以上的激光器需进一步研究。     

1.06μm激光在海水中传输特性的研究

分析了1.06μm脉冲激光信号与海水中各种物质的相互作用关系,分别就海水中水分子、浮游植物、黄色物质、悬浮颗粒与1.06μm脉冲激光的吸收和散射特性展开研究,最终构建了1.06μm脉冲激光在海水中的传输特性模型。该模型的建立,为采用1.06μm脉冲激光监测海洋环境参数奠定了理论基础。     

Structural and Electrical Properties of Ag/<Emphasis Type="Italic">n</Emphasis>-TiO<Subscript>2</Subscript>/<Emphasis Type="Italic">p</Emphasis>-Si/Al Heterostructure Fabricated by Pulsed Laser Deposition Technique

We have investigated the structural and electrical characteristics of the Ag/n-TiO₂/p-Si/Al heterostructure. Thin films of pure TiO₂ were deposited on p-type silicon (100) by optimized pulsed laser ablation with a KrF-excimer laser in an oxygen-controlled environment. X-ray diffraction analysis showed the formation of crystalline TiO₂ film having a tetragonal texture with a strong (210) plane as the preferred direction. High purity aluminium and silver metals were deposited to obtain ohmic contacts on p-Si and n-TiO₂, respectively. The current–voltage (I–V) characteristics of the fabricated heterostructure were studied by using thermionic emission diffusion mechanism over the temperature range of 80–300 K. Parameters such as barrier height and ideality factor were derived from the measured I–V data of the heterostructure. The detailed analysis of I–V measurements revealed good rectifying behavior in the inhomogeneous Ag/n-TiO₂/p-Si(100)/Al heterostructure. The variations of barrier height and ideality factor with temperature and the non-linearity of the activation energy plot confirmed that barrier heights at the interface follow Gaussian distributions. The value of Richardson’s constant was found to be 6.73 × 10⁵ Am^?2 K^?2, which is of the order of the theoretical value 3.2 × 10⁵ Am^?2 K^?2. The capacitance–voltage (C–V) measurements of the heterostructure were investigated as a function of temperature. The frequency dependence (Mott–Schottky plot) of the C–V characteristics was also studied. These measurements indicate the occurrence of a built-in barrier and impurity concentration in TiO₂ film. The optical studies were also performed using a UV–Vis spectrophotometer. The optical band gap energy of TiO₂ films was found to be 3.60 eV.     

Progress of MCT Detector Technology at AIM Towards Smaller Pitch and Lower Dark Current

We present our latest results on cooled p-on-n planar mercury cadmium telluride (MCT) photodiode technology. Along with a reduction in dark current for raising the operating temperature (T _op), AIM INFRAROT-MODULE GmbH (AIM) has devoted its development efforts to shrinking the pixel size. Both are essential requirements to meet the market demands for reduced size, weight and power and high-operating temperature applications. Detectors based on the p-on-n technology developed at AIM now span the spectrum from the mid-wavelength infrared (MWIR) to the very long wavelength infrared (VLWIR) with cut-off wavelengths from 5 μm to about 13.5 μm at 80 K. The development of the p-on-n technology for VLWIR as well as for MWIR is mainly implemented in a planar photodetector design with a 20-μm pixel pitch. For the VLWIR, dark currents significantly reduced as compared to ‘Tennant’s Rule 07’ are demonstrated for operating temperatures between 30 K and 100 K. This allows for the same dark current performance at a 20 K higher operating temperature than with previous AIM technology. For MWIR detectors with a 20-μm pitch, noise equivalent temperature differences of less than 30 mK are obtained up to 170 K. This technology has been transferred to our small pixel pitch high resolution (XGA) MWIR detector with 1024 × 768 pixels at a 10-μm pitch. Excellent performance at an operating temperature of 160 K is demonstrated.     

A New Type of Miniature Ultra-Wideband Band-Pass Filter with Coplanar Waveguide Fed

A novel miniature ultra-wideband (UWB) bandpass filter with coplanar waveguide (CPW) fed is proposed. The size of the filter is reduced largely because of combining the wideband couple gap and parallel-coupled CPW line (not cascading multiple resonator), and the length of realized filter is only 0.42 λ _g0 (λ _g0 is the guiding wavelength at central frequency). The measured insertion loss is less than 2.0 dB, and the group delay variation is less than 0.2 ns within the UWB passband. Basic agreement between the simulated and measured results has been achieved.