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1.
功率微电子封装用铝基复合材料   总被引:1,自引:0,他引:1  
微电子技术的发展对电子封装提出更高的要求,现有封装材料在性能方面存在局限性,已无法全面满足现代及一电子产品的要求,新型金属基复合材料因此应运而生,其中最有前景的封装材料是Al/SiC。  相似文献   

2.
文章主要介绍了目前电子封装材料的新方向——环氧树脂灌封料(又名液体环氧树脂封装料)。从环氧树脂灌封料的性能要求、主要组分及作用、制造工艺以及在封装过程中常见的问题及解决方法等方面对环氧树脂灌封料进行了全面的综述。  相似文献   

3.
环氧树脂/碳纤维复合封装材料的研究   总被引:1,自引:0,他引:1  
高电子及封装技术的快速发展对封装材料的性能提出了更加严格的要求,具有高导热及良好综合性能的新型封装材料的研究和开发显得更加重要。本文综述了一种新型的封装复合材料环氧树脂,碳纤维复合材料。对复合材料的热传导性能.电传导性能以及热机械性能进行了分别讨论。  相似文献   

4.
着重描述了新型莫来石材料的性能、工艺方面的进展情况,探讨了新的封装结构对封装性能的影响,最后得到的封装外壳可很好地满足GaAs超高速集成电路的封装要求。  相似文献   

5.
超高速GaAs集成电路封装材料,工艺和结构的研究   总被引:1,自引:0,他引:1  
着重描述了新型莫来石材料的性能,工艺方面的进展情况,探讨了新的封装结构对封装性能的影响,最后得到的封装外壳可很好的满足GaAs超高速集成电路的封装要求。  相似文献   

6.
介绍了环氧塑料材料的成份、性能要求以及制造良好性能封装材料的四项关键技术。  相似文献   

7.
半导体封装用环氧模塑料(EMC/Epoxy Molding Compound,通常又叫环氧塑封料),20世纪60年代中期起源于美国(Hysol),后发扬光大于日本,现在中国是快速崛起的世界EMC制造大国。环氧塑封料不仅可靠性高,而且生产工艺简单、适合大规模生产,同时成本较低,目前已占整个微电子封装材料97%以上市场。我国大陆EMC产能己超过7万吨,2008年将超过8万吨。随着环氧塑封行业的快速发展,对环氧塑封材料提出了更高的要求,除了提高性能、控制成本等要求外,主要集中在环境保护方面。  相似文献   

8.
赵钰 《电子与封装》2001,1(1):20-23
混合微电路技术的飞速发展对传统封装材料提出了更新、更高的要求。尤其是像柯伐这种热膨胀系数低的传统封装材料,已不能满足大功率 GaAs 和 Si 集成电路器件的要求。目前国际上出现一种新型封装材料,即 AISiC 金属基体复合物(MMC)材料,以其优越的物理特性及电性能成为高级混合微电路封装的理想材料。本文通过与传统封装材料的对比,展示了这种新型封装材料的优越性、并阐述了它的制造工艺及其应用前景。  相似文献   

9.
电子封装材料用金刚石/铜复合材料的研究进展   总被引:5,自引:1,他引:4  
电子技术的快速发展对封装材料的性能提出了更严格的要求.针对封装材料的发展趋势,金刚石/铜复合材料作为新一代的电子封装材料受到了广泛的重视.概述了金刚石/铜复合材料作为封装材料的优良性能及其制备工艺进展,并对其发展方向进行了展望.  相似文献   

10.
汉高宣布了一种专为满足堆叠芯片级封装(SCSP)设备的独特制造要求而设计的材料组合。该最新材料组合结合了附晶材料Hvsol QMI536NB和塑封材料Hysol GR9820的强大性能特点,其据说能传递毋庸质疑的可靠JEDEC Level 1/260回流性能。这两种材料均能在无铅环境下发挥良好的性能,并可极强地抵挡上升的温度和高要求制造环境。  相似文献   

11.
随着航空航天领域的迅速发展,其应用的电子器件不断微型化、高度集成化,并且可靠性要求越来越高,其电子封装材料具有更高的热导率及与芯片热膨胀系数的匹配性,还要求其电子封装材料具有更低的密度。BeO、AlN、Al/SiC与AlSi由于具有高热导率、低密度及与芯片材料良好的热膨胀匹配性,非常符合航空航天用电子封装材料的发展趋势,并已经逐步在取代常用的一些封装材料。重点介绍了四种材料的性能优势,以及它们之间的性能对比与应用前景分析。  相似文献   

12.
Interfacial reactions, surface morphology, and current-voltage (I-V) characteristics of Ti/Al/4H-SiC and TiN/Al/4H-SiC were studied before and after high-temperature annealing. It was observed that surface smoothness of the samples was not significantly affected by the heat treatment at up to 900°C, in contrast to the case of Al/SiC. Transmission electron microscopy (TEM) observation of the Ti(TiN)/Al/SiC interface showed that Al layer reacted with the SiC substrate at 900°C and formed an Al-Si-(Ti)-C compound at the metal/SiC interface, which is similar to the case of the Al/SiC interface. The I-V measurement showed reasonable ohmic properties for the Ti/Al films, indicating that the films can be used to stabilize the Al/SiC contact by protecting the Al layer from the potential oxidation and evaporation problem, while maintaining proper contact properties.  相似文献   

13.
Accurately calculating the band gap and electronic state density distribution of crystals is significant in determining optical properties. First-principles calculations were based on the projector-augmented-wave method with the Perdew–Burke–Ernzerhof generalized gradient approximation functional, pure density functional theory (DFT) and Heyd–Scuseria–Ernzerhof (HSE) hybrid functional. Such calculations account for the lattice parameters, electronic structure, optical properties, and mechanical properties of materials, which include the diamond-C and zinc blende structure of Si, Ge, and 3C–SiC in this study. The results obtained with HSE calculations is more accurate than that of the pure DFT calculations, and consistent with previous experimental values. The band structure and density of states of Si, Ge, and 3C–SiC indicate that these materials are indirect band gap materials. Based on HSE calculation, the band gap of Si and 3C–SiC is in accordance with previous experimental values. The imaginary part of the analytical dielectric function, the refractive index, and the adsorption coefficient also matches previous experimental values. A corresponding relationship exists among the peak of the imaginary part of the analytical dielectric function, the refractive index, and the adsorption coefficient. The optical properties have a direct relationship with the distribution of the crystal band gap and electronic state density. The materials exhibit brittleness. Although 3C–SiC is not as hard and stiff as diamond, it is a better semiconductor than Si and Ge. The mechanical anisotropy of the four materials is inconspicuous. The anisotropy of diamond-C in terms of its Young's modulus is extremely inconspicuous.  相似文献   

14.
随着红外探测器阵列规模快速提升,在封装杜瓦要求轻量化、低成本、高效率的形势下,封装杜瓦陶瓷衬底设计难度加大。文章对比了几种科研实际中使用的陶瓷材料特性及其工艺可行性;研究了在测试杜瓦中,随着混成芯片阵列规模的提升,热应力与芯片尺寸的相对关系;研究了Al2O3、AlN、SiC衬底材料在降低芯片热应力方面的能力差异;结合目前陶瓷加工工艺水平、加工成本以及探测器阵列规模,给出了Al2O3、AlN、SiC衬底材料在实际应用中的选取建议。  相似文献   

15.
Silicon carbide (SiC) matrix composites reinforced by SiC fibres (SiC/SiC composites) are currently being considered as alternative materials in high Ni alloys for high-temperature applications, such as aerospace components, gas-turbine energy-conversion systems and nuclear fusion reactors, because of their high specific strength and fracture toughness at elevated temperatures compared with monolithic SiC ceramics. It is important to evaluate the creep properties of SiC fibres under tensile loading in order to determine their usefulness as structural components. However, it would be hard to evaluate creep properties by monoaxial tensile properties when we have little knowledge on the microstructure of crept specimens, especially at the grain boundary. Recently, a simple fibre bend stress relaxation (BSR) test was introduced by Morscher and DiCarlo to address this problem. Interpretation of the fracture mechanism at the grain boundary is also essential to allow improvement of the mechanical properties. In this paper, effects of stress applied by BSR test on microstructural evolution in advanced SiC fibres, such as Tyranno-SA including small amounts of Al, are described and discussed along with the results of microstructure analysis on an atomic scale by using advanced microscopy.  相似文献   

16.
由于硅材料本身的限制,传统硅电力电子器件性能已经接近其极限,碳化硅(SiC)器件的高功率、高效率、耐高温、抗辐照等优势逐渐突显,成为电力电子器件一个新的发展方向.综述了SiC材料、SiC电力电子器件、SiC模块及关键工艺的研究现状,重点从材料、器件结构、制备工艺等方面阐述了SiC二极管、金属氧化物半导体场效应晶体管(MOSFET)、结晶型场效应晶体管(JFET)、双极结型晶体管(BJT)、绝缘栅双极晶体管(IGBT)及模块的研究进展.概述了SiC材料、SiC电力电子器件及模块的商品化情况,最后对SiC材料及器件的发展趋势进行了展望.  相似文献   

17.
利用第一性原理赝势平面波方法计算了Si-C邻 近元素(B、N、Al、P)掺杂二维SiC的几何结构、 电子结构和光学性质。结果表明:掺杂后的二维SiC晶格常数(a、b)、键长及角度均发生了明显变化;同时, 在禁带中引入了杂质能级,导带和价带均向低能方向发生了明显的移动,带隙发生变化,费 米能级附近引入了 杂质的2p及3p态电子。光学性质的计算表明:在低能端B、N、Al掺杂使二维SiC吸收电磁波 的能力明显增 强;静态介电常数增大而能量损失峰降低。以上结果说明可以根据需要利用B、N、Al、P掺 杂来调制二维SiC材料的光电性质。  相似文献   

18.
高体份SiC/Al反射镜在空间光学应用可行性的分析   总被引:2,自引:0,他引:2  
简述了空间遥感器设计中反射镜材料选择的重要性及影响。对SiC和SiC/Al复合材料与常用光学材料的空间应用综合品质因子进行了比较,SiC材料的综合品质因子为8072.92,高体分SiC/Al复合材料的综合品质因子为1 687.50。并对高体分SiC/Al复合材料应用在反射镜上的光学性能进行了检测。检测结果得出材料的表面粗糙度能够达到1.49 nm,小于5 nm;反射率达到95%以上,能够满足反射镜的性能要求。对采用高体分SiC/Al复合材料作为反射镜和背板材料的相机结构进行分析。分析结果得出整体结构前三阶模态为115 Hz,120 Hz,203 Hz,满足空间遥感器大于100 Hz的技术要求,各反射镜的面形精度满足RMS≤1/50λ(λ=632.8 nm)的技术要求。各项测试数据和有限元分析结果表明,高体份SiC/Al复合材料作为反射镜在空间光学中应用是可行的。  相似文献   

19.
Materials with high thermal conductivity and thermal expansion coefficient matching with that of Si or GaAs are being used for packaging high density microcircuits due to their ability of faster heat dissipation. Al/SiC is gaining wide acceptance as electronic packaging material due to the fact that its thermal expansion coefficient can be tailored to match with that of Si or GaAs by varying the Al:SiC ratio while maintaining the thermal conductivity more or less the same. In the present work, Al/SiC microwave integrated circuit (MIC) carriers have been fabricated by pressureless infiltration of Al-alloy into porous SiC preforms in air. This new technique provides a cheaper alternative to pressure infiltration or pressureless infiltration in nitrogen in producing Al/SiC composites for electronic packaging applications. Al-alloy/65vol% SiC composite exhibited a coefficient of thermal expansion of 7/spl times/10/sup -6/ K/sup -1/ (25/spl deg/C-100/spl deg/C) and a thermal conductivity of 147 Wm/sup -1/K/sup -1/ at 30/spl deg/C. The hysteresis observed in thermal expansion coefficient of the composite in the temperature range 100/spl deg/C-400/spl deg/C has been attributed to the presence of thermal residual stresses in the composite. Thermal diffusivity of the composite measured over the temperature range from 30/spl deg/C to 400/spl deg/C showed a 55% decrease in thermal diffusivity with temperature. Such a large decrease in thermal diffusivity with temperature could be due to the presence of micropores, microcracks, and decohesion of the Al/SiC interfaces in the microstructure (all formed during cooling from the processing temperature). The carrier showed satisfactory performance after integrating it into a MIC.  相似文献   

20.
SiC半导体技术在近几年得到了迅速发展。与其它半导体材料相比,SiC独特的热特性和电特性,在功率和频率性能方面具有最高的品质因数。SiC还适应于高温和辐射环境。从结构上看,SiC具有多种同质异型体。本文概括介绍了SiC材料特性、晶体生长和器件研制的进展情况,以及SiC的应用前景。  相似文献   

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