相对论飞秒激光与微结构靶相互作用增强太赫兹波产生的数值模拟研究

为了增强相对论飞秒激光与固体靶相互作用下太赫兹波的产生,提出了前端锥形开口的纳米丝靶结构,并通过胞中粒子法(Particle-In-Cell)数值模拟,研究了该结构对太赫兹波产生的影响,还与普通结构的纳米丝靶所产生的太赫兹波结果进行了对比。结果显示,前端锥形开口的纳米丝靶结构能够明显增强太赫兹波的产生,在探测点位置得到了比普通纳米丝靶中的太赫兹波电场强3倍的结果。最后详细分析了不同靶型结构影响太赫兹波产生的物理因素,发现不同靶型结构通过影响入射激光的吸收与反射,进而影响靶后超热电子的能量与数目。上述研究结果将有助于推动强场太赫兹波领域的发展,为实验研究提供方案和数据支撑。     

基于激光成丝的太赫兹时域光谱系统研究综述

太赫兹时域光谱(THz-TDS)技术是一种使用相干探测的频谱分析手段。THz-TDS系统集太赫兹波发射器与探测器于一体,通过相干探测,可以同时获取太赫兹脉冲的电场强度和相位信息,广泛用于生物、材料、安检等领域。超快激光成丝产生太赫兹波是当前产生宽频谱、高强度太赫兹辐射的一个重要途径。文章详细介绍了超快激光成丝辐射太赫兹波的主流物理机制以及增强、调控太赫兹波的主要方法,阐述了基于激光成丝的THz-TDS系统的探测原理和探测手段。     

太赫兹成像检测算法研究

由于太赫兹波所处波段位置特殊性以及现阶段太赫兹成像系统性能的限制等,太赫兹波成像质量低,无法满足可视化效果,限制了其发展和应用。结合太赫兹图像模糊特征和灰度信息提出利用灰度特征对太赫兹图像进行图像分割来提高太赫兹图像质量,抑制太赫兹图像背景噪声,保留太赫兹图像目标重要信息,实现太赫兹成像目标检测。实验结果与其他太赫兹图像处理方法结果对比表明,基于灰度特征的图像处理算法可以提高图像清晰度和对比度,实现精确分割,为太赫兹成像在安全检查和医学成像等应用中实现快速检测和提取目标奠定基础。     

采用CMOS太赫兹波探测器的成像系统

太赫兹波成像技术在生物医疗和安全检测等领域具有广阔的应用前景。针对新一代信息技术对便携式太赫兹波成像设备的需求，设计了基于CMOS太赫兹波探测器的成像系统。该系统包括一款CMOS太赫兹波探测器、片外模数转换器（ADC）、FPGA数字信号处理器、二位步进机、四个抛物面镜和太赫兹波辐射源等。CMOS太赫兹波探测器集成了片上贴片天线以及作为检波元件的NMOS晶体管，探测器由180 nm标准CMOS工艺制成。太赫兹波探测器的输出被片外模数转换器（ADC）采集并转换为数字信号，该数字信号被FPGA采集并传输到电脑上成像。所有上述元件均被装备在印刷线路板（PCB）上以减小系统体积。该系统实现了透射式太赫兹波扫描成像而无需斩波-锁相技术，并给出在860 GHz的太赫兹波照射下隐藏在信封内部金属的成像结果。     

太赫兹波传播过程中横模分布的成像

研究了焦点位置附近太赫兹波的横模分布,目的在于了解系统中太赫兹波的横向分布情况,为进行太赫兹光谱和成像实验提供依据。通过太赫兹波逐点扫描成像,对经常被用来放置测试样品位置附近的太赫兹波横模分布情况进行了定性的分析。利用“狭缝法"测量了太赫兹光束的束宽。结果表明,太赫兹波在焦点附近不同位置的横向分布有较大差异,在焦点处对应于最长波长1.5 mm的最小光斑直径约为1.0 mm,这说明太赫兹波的聚焦有一定的限度。实验确定了系统中放置样品的最佳位置,对开展太赫兹光谱和成像研究有参考价值。     

小鼠在体皮下乳腺癌的太赫兹波成像检测研究

乳腺癌是女性常见癌症之一,乳腺癌区域的精准检测对乳腺癌的治疗有至关重要的作用。本文采用频率为2.52THz的连续太赫兹波反射式成像系统,对小鼠在体皮下乳腺癌模型进行了太赫兹波成像检测。研究结果表明,太赫兹波成像可以清晰识别出乳腺癌区域,且与肉眼可见肿瘤区域一致。在体乳腺癌区域的太赫兹波相对反射率高于正常组织,两者相对反射率差值高达15%。进一步,对距离皮肤表面不同深度的离体乳腺癌组织进行切片和苏木精-伊红(H&E)染色,作为金标准对照。结果发现乳腺癌区域的面积随着距离皮肤表面深度的增加而增大。通过将太赫兹波成像与H&E染色结果对比可知,在距离皮肤表面约460μm处,太赫兹波图像和H&E染色图中的肿瘤区域面积相等。由此可知,太赫兹波对在体皮下乳腺癌的探测深度大约在460μm左右,太赫兹波有望实现深部肿瘤的检测。     

不同频率的太赫兹时域光谱透射成像对比度研究

主要探讨自然界树叶样本的太赫兹透射成像中的对比度与透射频率的关系。运用透射模式的太赫兹时域光谱系统对样本进行了聚焦逐点式的主动扫描,得到样本各部分的太赫兹波透射率,然后进行数据处理和二维成像。通过对样本在8个不同频率下的太赫兹透射率成像的比对分析,表明样本的不同部分对各个频率的太赫兹波的吸收都有较明显的差别。为了得到更清晰的太赫兹成像,必须选取合适的成像频率使样本成像的对比度更佳,实验发现应该选择透射振幅适中的频段,且在此范围内样品的某些部分具有吸收峰的频率附近进行成像。     

太赫兹技术及其应用研究的进展

过去十年来,太赫兹技术理论研究的蓬勃发展带动了太赫兹波应用领域的迅速扩大。本文概述了太赫兹波的产生、探测技术等基础研究的现状,重点介绍了近年来太赫兹波在物体成像、环境监测、军事和通信、医学和生物及其它几个应用领域的研究进展和最新研究成果。     

太赫兹波在军事领域中的应用研究

详细介绍了太赫兹波的优良性质及利用光导天线和光整流产生太赫兹波的方法.从远程监视、成像、爆炸物鉴别及无损检测等方面,重点介绍了太赫兹技术在军事领域中的应用.     

太赫兹孔径编码成像研究综述

太赫兹孔径编码成像借鉴了光学孔径编码成像和微波关联成像的基本原理,通过反射式天线等技术改变目标区域太赫兹波等效空间幅相分布来实现高分辨成像,具有高帧率、高分辨、前视凝视等诸多优势,是太赫兹雷达的重要发展趋势之一.介绍了太赫兹孔径编码成像提出的背景,系统阐述了其原理、现状、实现方式、关键问题,指出了其在末制导、安检反恐等领域广阔的应用前景,以期为推动太赫兹孔径编码成像和新体制太赫兹雷达研究提供一定的借鉴.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.