磁扰和磁静期间南极McMurdo地区电离层闪烁统计特征的对比分析

利用南极McMurdo站（地理经纬度（166.73°E,77.88°S）,地磁纬度80°S）2011-2014年电离层闪烁观测数据,对比分析了磁扰和磁静期间电离层闪烁发生率的周日分布、季节分布,以及随太阳活动变化的统计特征.结果表明:磁扰和磁静期间电离层闪烁的周日分布均在磁中午附近和磁子夜后出现峰值,而磁扰期的闪烁发生率显著高于磁静期,并且闪烁发生范围向低纬和高纬方向扩展;春秋季电离层闪烁发生率明显高于夏冬季,每年的2、3月份和9、10月份高发,冬季6月份发生率最低;磁扰期的季节性特征比磁静期更为明显,且闪烁发生范围、发生频率均明显大于磁静期;太阳活动对电离层闪烁的影响十分显著,随着太阳活动的增强,闪烁发生的范围和发生频率均明显增大.该研究结果有助于了解极区电离层闪烁的整体分布情况,将为极区电离层闪烁建模以及闪烁预报提供支持,对极区通信、导航定位等有着重要的应用价值.     

一种考虑春秋分不对称性的电离层闪烁发生概率季节变化模型

通过分析2010年至2017年期间的中国低纬地区海口站（20°N，110°E）特高频（ultra high frequency，UHF）电离层闪烁，发现绝大部分年份中春分前后电离层闪烁事件发生概率高于秋分前后，综合电离层垂测观测数据，认为主要原因是春秋分背景电离层电子密度和h'F日落增强现象的不对称性.最后基于电离层闪烁月发生概率统计数据，及其与季节和太阳活动的相关性，建立了一种考虑春秋分不对称性的电离层闪烁发生概率季节变化统计模型.此模型能够较好地表征电离层闪烁发生概率的季节变化特性，具有重要应用价值.     

基于掩星观测的全球低纬地区电离层不均匀体形态分析

基于气象、电离层和气候星座观测系统（Constellation ObservingSystem for Meteorology, Ionosphere and Climate, COSMIC）掩星闪烁指数观测数据,将遮掩点的位置作为电离层不均匀体出现的位置,对比分析了电离层E区不均匀体和F区不均匀体随时间、空间、太阳活动和地磁活动的变化. 发现E区闪烁主要出现于夏季半球的中纬地区;而F区闪烁主要出现于春秋季的磁赤道和低纬地区,受到地磁场的强烈控制. 除季节因素外,太阳活动对E区闪烁的影响并不是基本的,而赤道异常和赤道附近的F区闪烁受到太阳活动的显著控制:相比太阳活动低年,高年的F区闪烁强度更大,且扩展至更高的纬度. 地磁扰动时,中低纬地区电离层E区闪烁的全球分布与地磁平静时相似,但是闪烁的强度总体上略有增加,尤其是凌晨时段（00:00—06:00LT）;中低纬地区电离层F区闪烁的全球分布也与地磁平静时相似,但是闪烁强度明显增加,且扩展至更高的纬度,尤其是00:00—06:00LT及18:00—24:00LT的太平洋扇区. 两者对比表明,电离层F区闪烁对地磁活动更为敏感. 将COSMIC掩星与天基原位观测的闪烁出现率结果进行对比,发现掩星手段不仅可以反映全球尺度的电离层不均匀体变化特征,包括它随季节/经度、地方时、太阳活动和地磁纬度的变化,而且可以反映电离层不均匀体随高度的变化,这是以往的观测手段难以拥有的.     

太阳活动对赤道电离层闪烁影响的初步研究

利用赤道地区瓦尼莫(Vanimo)站太阳活动高年到低年(2000-2009)L波段电离层闪烁数据,分析了闪烁随太阳活动从高年到低年的形态特征,统计研究了太阳黑子数与闪烁发生率相关性,并初步探讨了太阳活动影响闪烁的机制。统计研究结果表明:太阳活动中、高年期间,闪烁发生率有明显的季节、月、地方时变化规律;低年闪烁表现平静,以弱闪烁为主,且无明显规律;太阳黑子对闪烁发生率表现出一定调制作用,随着黑子数从高年到低年的减少,闪烁发生率呈下降趋势,中、强闪烁表现的更为突出。说明太阳活动对中、强闪烁的影响比弱闪烁更明显,但其影响机制仍须大量统计分析和理论研究的进一步揭示。     

基于2007-2013年COSMIC掩星数据的电离层振幅闪烁研究

利用2007-2013年的COSMIC掩星数据，分析了E区与F区电离层闪烁的变化特征.发现用闪烁出现频次、闪烁发生率以及闪烁强度来表征的电离层闪烁出现规律比较相似.E区电离层闪烁在夏季半球的中纬地区最强，其次是春秋季的低纬地区和冬季半球.就经度分布来说，春秋季E区电离层闪烁呈四波结构.对F区电离层闪烁来说:南美-大西洋扇区在12月至点最为显著；非洲和太平洋扇区在6月至点最为显著；大西洋扇区在春秋分季最为显著.极区也出现中等强度的闪烁，尤其在南半球的90°E~180°E扇区较为显著.高纬E区电离层闪烁强度随太阳活动的增强而增强，而低纬和南半球的中纬E区闪烁随太阳活动的增强而减弱.高纬和低纬F区闪烁随太阳活动的增强而增强，而中纬F区电离层闪烁对太阳活动无显著依赖关系.对于赤道区来说，北半球60°W~60°E经度区闪烁强度随太阳活动的变化最为显著，其次是南半球60°E~210°E附近；而对于高纬地区来说，F区闪烁强度随太阳活动的变化最为显著的区域在南半球60°E~210°E附近.     

一种基于小数据量的UHF频段电离层闪烁事件人工智能预报新方法

准确的电离层闪烁事件预警是空间天气预报的主要任务之一.针对中国低纬地区特高频（ultra high frequency,UHF）频段电离层闪烁事件预警信息需求，基于小数据量，充分利用经验知识和深度学习算法从电离层闪烁发生前的背景电离层参数中筛选有效的事件发生前兆因子，进而将电离层闪烁事件预报问题转换为观测数据的分类问题，最终基于深度信念网络形成了一种中国低纬地区UHF频段电离层闪烁事件预报新方法.利用该方法分析了多种观测数据组合与UHF频段电离层闪烁事件发生之间的相关性后，首次发现预报地区东侧跨赤道的电子总含量（total electron content,TEC）随纬度变化剖面的时序数据是电离层闪烁事件预报的重要前兆因子之一，对提升预报性能指标有显著帮助.     

赤道地区L-波段电离层闪烁的形态特性

利用空间中心海南台站GPS电离层闪烁监测仪2003年7月到2005年6月两年间的观测资料,对太阳活动下降期间海南地区L-波段电离层闪烁特性进行了分析,主要分析结果表明:闪烁主要发生在日落后到午夜附近,其在春秋分附近出现的时间最早,集中出现于22LT左右,在冬季出现一定的时间延迟,在夏季出现的时间最晚,主要出现在午夜附近;闪烁的频率和强度春秋季明显增大,在冬季和夏季明显减小;闪烁主要发生于磁静日期间,这种情形主要集中于春秋分附近;电离层闪烁也可能发生于磁扰/暴期间,这种情形多发生于夏季和冬季期间.相对于地磁活动,太阳活动对闪烁活动的影响相对不明显.     

多站多路径GPS信号研究低纬电离层不均匀体

发展了GPS信号的多站多路径监测方法,对我国低纬地区电离层不均匀体特性进行了研究.多站观测统计分析表明,尽管太阳活动已下降到中等程度,但电离层闪烁现象在位于赤道异常区的海口、广州等低纬地区仍经常发生,尤其在二分季前后闪烁发生率明显增大,且闪烁强度较大;通过GPS信号的多站多路径监测还发现,电离层不均匀体在东经105°～120°间,北纬27°以南区域出现频繁,而且在北纬23°以北区域的不均匀体易衰减并首先消失,在北纬20°～23°间区域内则会持续较长时间;进一步分析其闪烁功率谱,计算出了不均匀体的东向平均漂移速度.     

电离层闪烁对星载P波段SAR的影响分析

电离层闪烁会破坏星载合成孔径雷达(SAR)回波信号之间的相关性,使其成像性能下降。已有的工作都是假设已知电离层电子密度的扰动开展的,但是目前的测量手段无法直接获取该参量。该文利用海口观测站超高频(UHF)频段太阳活动高年和中等年份的实测数据,分析电离层闪烁的变化特征,并基于相位屏理论,给出一种利用闪烁指数评估电离层闪烁对星载P波段SAR系统影响效应的方法。结果表明:电离层闪烁在低纬地区主要发生在夜间,且在两分季高发;太阳活动高年,全年约有3.8%的时间会发生电离层闪烁现象;对于P波段SAR系统来说,弱闪烁使得方位向冲激响应函数(IRF)的主瓣宽度和副瓣增益增大,分辨率下降;中等强度闪烁使得方位向冲激响应函数发生严重的扰动,副瓣增益增大到主瓣的水平,主瓣中心也发生平移,可能使得系统无法直接成像。     

我国电离层闪烁初步观测结果

电离层闪烁观测是研究电离层闪烁现象及其效应的实验基础.本文中利用自行研制的电离层闪烁监测仪,开展了在我国中低纬地区的闪烁观测,初步的结果表明电离层闪烁在中低纬地区发生频繁,且对UHF频段通信卫星的影响十分严重.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

中国建立EB级存储实验室,致力云计算应用(英文)

正With the support of 863 programs,Sugon Information Industry Co.,Ltd.,set up a dawning EB-class storage laboratory to address massive data storage requirements and largescale cloud computing demonstration applications.The Dawning EB-class cloud storage system adopts advanced fault-tolerant architecture,efficient data fault-tolerant algorithms with user authentication and data encryption policies to deal with the"lost""wrong"and"stolen"problems of data for ensuring the reliability and safety of the EB-class storage system in the public network application environments.The Dawning EB-class Storage Laboratory taking advan-