基于电信边缘云的流量调度研究

电信运营商传统的电信机房面临着大量的运营和运维成本开销,网络功能虚拟化(NFV)与软件定义网络(SDN)也在迅猛发展.本文提出了基于网络功能虚拟化(NFV)与软件定义网络(SDN)的电信边缘云化数据中心流量优化调度机制.电信边缘云有效减少了资本性支出和运营及运维成本,并使得新业务的部署及推广发布具有较高的灵活性和伸缩性,有效增强了业务创新能力.     

省域广电网络干线运维管理系统建设

省域广电网络干线运维管理系统在有线网络运营商干线运维管理中发挥着重要作用.随着信息技术的发展、分项管理系统的增多,省域广电网络干线运维管理系统建设需要发挥集约优势,综合利用多种技术,简化运维管理.本文讨论了省域广电网络干线运维管理系统的实现方式,并以江苏省域有线宽带网络认证系统为例,介绍了省域广电网络干线运维管理系统的设计与实现.     

SDN在传送网络的引入与应用分析

认为软件定义网络(SDN)引入传送网可以较为显著地提升资源利用、运维管理等能力,在基站业务、集客业务、家宽业务、光缆网络等应用场景中可通过软件定义网络+分组传送网(SDN+PTN)、软件定义网络+分组传送网+光传送网(SDN+OTN)、软件定义网络+分组传送网+光传送网+无源光网络(SDN+PON)、智能光配线网络(ODN)等实现网络与SDN的结合,实现业务的灵活调度、资源利用率的有效提升、全局性的资源配置。针对每张网络的特点和技术成熟度,对传送网引入SDN的路径进行了分析,尤其针对SPTN(即SDN+PTN)的网络结构和技术要求展开了分析,并对试点情况进行了介绍。最后,对比了SDN引入前后网管的组织架构,并提出SDN引入后各层功能的变化。     

运营商现网引入SDN/NFV的5个关键问题

由于具备能够实现软硬件解耦、开放网络能力、简化运维配置等功能,近年来SDN/NFV技术越来越受到海内外运营商的关注. SDN/NFV技术探索如火如荼 结合各自对SDN/NFV的理解,运营商一系列的实验项目已在网络中开展起来. 尤其是以AT&T为代表的激进派,以Domian2.0定义的网络框架为指引,提出了到2020年,将彻底完成网络转型,整个网络75％由软件组成,通过SDN/NFV将网络控制放入云中和用户手中,AT&T也将转型为一家软件公司.     

栅格通信网络综合运维管理体系结构研究

针对栅格化通信网络应用背景,在分析当前网络运维管理领域3种主流技术体系基础上,提出了一种以用户为中心、面向服务的融合主流技术体系的综合运维管理系统体系结构,从用户应用视图、管理功能视图及系统集成视图等3方面描述栅格通信网络综合运维管理系统设计、研制与建设中需要关注的关键技术问题,满足企业管理部门、技术管理部门及技术保障部门等不同使用部门的差异性、弹性管理需求。     

SDN/NFV关键技术的分析和实现关键技术的分析和实现:MICT-OS~(TM)

提出一种支持软件定义网络(SDN)/网络功能虚拟化(NFV)网络的新一代统一编排、自动运维和开放运营管理系统架构——MICT-OS~(TM)。MICT-OS~(TM)通过网络抽象全方位开放运营商能力,构建创新业务生态链。MICT-OS~(TM)支持端对端的统一业务编排和资源管理,支持基于模型驱动的业务开通自动化,支持基于网络实时监测分析和策略优化的运维自动化。MICT-OS~(TM)为SDN/NFV大规模投入商用摸索出一条可行之路。     

SDN控制平面的研究和分析

SDN是一种新型网络架构,其控制平面和数据平面相分离的思想,使得网络的运维、管理更为简单。控制平面作为SDN的控制核心,是整个SDN网络的关键所在。由于SDN控制器市场产品繁多,同时由于单控制器控制平面存在着可扩展性、可靠性等问题,研究组织和机构也纷纷提出了不同的分布式控制平面解决方案,这对SDN初学者和研究者造成了极大的困扰。为解决这个问题,文章详细介绍了当前主流的控制器,对控制器的各项参数进行分析,从而为研究人员和开发者选择控制器提供参考;并介绍了分布式控制平面设计方案,对分布式控制平面的研究方向做出了探讨。     

SDN和NFV若干问题的研究

讨论了SDN和NFV中的若干问题。指出SDN与NFV目前都是在网络局部范围中使用的网络实现技术,NFV一般是用在运营商网络的边缘,SDN主要是用一种新的形态来组网,实现网络局部优化和网络管理运维的局部优化。SDN中的SoftwareDefinedNetworks是具有建立网络创新平台的潜质,因而应该引起更为高度的关注。     

电力通信中运维管理系统的建设和应用分析

为顺应电力通信网的快速发展,从整体上提升电力通信网管理运行水平和运行质量,有必要强调电力通信网络运维管理工作,保障电力通信运维工作的规范性、有效性、高效性、可靠性。本文首先重点分析了电力通信中运维管理存在的各方面问题,在这些问题的基础上进行了电力通信运维管理系统的建设和实现,结果表明,运维管理系统的使用能够在很大程度上提升工作效率。     

基于ITIL的跨域网络安防运维业务流程设计

随着网络安防系统规模的不断扩大,对运维管理的要求随之不断提高。为解决原有网络安防运维管理整体信息化手段不足、业务处置流程缺乏流程化的弊端,引入业务流程管理理念,构建基于ITIL的网络安防运维业务流程体系;采用以数据为中心的建模方法,设计构建以Artifact为中心的网络安防运维业务流程模型。最后,运用业务流程管理软件构建流程管理系统,验证了业务流程模型的功能作用。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and sub-pixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.