Dependence of the frequency shift of the optical-microwave doubleresonance signal in the Cs D2 line on the pumpingfrequency and power of a GaAs semiconductor laser

The OMDR (optical-microwave double resonance) effect in the Cs D₂ line was studied for realizing a gas-cell-type Cs atomic frequency standard. A glass cell containing Cs with buffer gases (Ar/N₂=1.26, total pressure=39 torr) was placed in a TE₀₁₂ mode microwave cavity at a temperature of 45°C and was pumped using a GaAs semiconductor laser frequency locked to an external interferometer tuned to the 6P_3/2 (F=2,3,4)←6 S_1/2(F=3) transition. The OMDR signal appearing at the resonance to the F=4←3 hyperfine transition of the 6S_1/2 state shifted with detuning of the laser frequency and with change of the laser and microwave powers. The dependence of the shift on these variables around an optimum operating condition was obtained as, Δν_MW[Hz]=-(0.31±0.02) {1+(0.44±0.15) (ΔP_L/P_L)} Δν_L [MHz]-10(ΔV_MW/V _MW)     

Thermal shifts of the spectral lines in the 4F3/2 to 4I11/2 manifold of anNd:YAG Laser

A report is presented of the thermal shifts of eleven of the twelve lines from the ⁴F_3/2 Stark energy levels to the ⁴I_11/2 energy levels in an Nd:YAG laser for a temperature change from 20-200°C. The thermal shift difference between the Stark sublevels R₁, R₂ in ⁴F_3/2 is found to be about -0.6±0.6 cm^-1/100°C. Within experimental uncertainty, all of the lasing lines either moved to longer wavelength or remained unchanged with increasing temperature     

High-transconductance heterostructure Ga0.47In0.53As/InP metal-insulator-semiconductor field-effect transistorsgrown by chemical beam epitaxy

SiO₂ insulator is on top of an InP layer; current transport occurs, however, an in adjacent n-type Ga_0.47In_0.53As:Sn layer. A transconductance of g_m=300 mS/mm is obtained from depletion-mode MISFETs with a gate length of 1.2 μm. This MIS (metal-insulator-semiconductor) junction has a symmetric current-voltage characteristic and a low-leakage current of ~1 nA at ±2 V. High-frequency S-parameter measurements performed b probing devices on the wafers yield a unity current gain frequency of F _t=22.2 GHz and a maximum frequency of oscillation f _max=27 GHz     

Quarter-micrometer gate ion-implanted GaAs MESFET's with an f1 of 126 GHz

The fabrication and characterization of a 0.25-μm-gate, ion-implanted GaAs MESFET with a maximum current-gain cutoff frequency f_t of 126 GHz is reported. Extrapolation of current gains from bias-dependent S-parameters at 70-100% of I _dss yields f₁'s of 108-126 GHz. It is projected that an f₁ of 320 GHz is achievable with 0.1-μm-gate GaAs MESFETs. This demonstration of f₁'s over 100 GHz with practical 0.25-μm gate length substantially advances the high-frequency operation limits of short-gate GaAs MESFETs     

Observation of a large number of new laser lines from12CD3F gas optically pumped with a continuouslytunable high-pressure pulsed CO2 laser

An observation is reported of a large number of new laser lines from ¹²CD₃F gas optically pumped with a continuously tunable high-pressure pulsed CO₂ laser. Making use of the coincidence of the 10 μm P and R branches of CO₂ with the v₃ and v₆ vibrational-rotational absorption bands of ¹²CD₃F, 180 laser lines were found in the wavenumber range between 8 and 55 cm^-1, all of them yet unknown; these lines are studied for characteristic properties of laser action. All laser lines are assigned as pure rotational transitions in the vibrational excited or ground states     

Measurement of the stimulated emission cross section for the 4F3/2-4I13/2transition of Nd3+ in YAlO3 crystal

A method for the simultaneous measurement of the stimulated emission cross section and fluorescence lifetime by studying the relation between laser parameters and the laser relaxation oscillation frequency is discussed. The stimulated emission cross section for the ⁴F_3/2-⁴I_13/2 transition of Nd³⁺ ion in YAP crystal was measured to be (22±1)×10^-20 cm²     

Capacity of the Gaussian arbitrarily varying channel

The Gaussian arbitrarily varying channel with input constraint Γ and state constraint Λ admits input sequences x=(x₁,---,X_n) of real numbers with Σx_i²⩽nΓ and state sequences s=(S₁,---,s_n ) of real numbers with Σs_i²⩽nΛ; the output sequence x+s+V, where V=(V₁,---,V_n) is a sequence of independent and identically distributed Gaussian random variables with mean 0 and variance σ². It is proved that the capacity of this arbitrarily varying channel for deterministic codes and the average probability of error criterion equals 1/2 log (1+Γ/(Λ+σ²)) if Λ<Γ and is 0 otherwise     

On the dynamics of population inversion for 3 μm Er3+lasers

A generalized model for 3-μm (⁴I_11/2 →⁴I_13/2)Er lasers is proposed. The essential energy transfer processes present in the single-doped Er ³⁺ systems (up-conversion from ⁴I_13/2, up-conversion from ⁴ I_11/2, cross-relaxation from ⁴S _3/2), as well as those present in Cr³⁺ codoped Er ³⁺ systems, are taken into account. In the frame of this model, the main features of 3 μm Er³⁺ lasers, such as long pulse or CW operation, the change of emission wavelength as a function of pumping conditions, and the effects of codoping with Ho³⁺ or Tm³⁺ ions, are explained     

A single-hop F2 propagation model forfrequencies above 30 MHz and path distances greater than 4000 km

Standard textbook explanations of ionosphere propagation suggest that 30 MHz and 4000 km are the limiting frequency and distance for single-hop communications. During the peak of sunspot cycle 22, however, there have been hundreds of reports of F₂ communications exceeding great-circle distance of 4200 km at 50 MHz. It is shown that parabolic F₂ ionospheric models explain this propagation irregularity, although textbooks and reference books fail to show that such long distances at VHF are possible     

A chemically driven visible laser transition using fastnear-resonant energy transfer

Evidence is obtained which demonstrates the potential for developing purely chemical visible lasers based on rapid near-resonant energy transfer from metastable excited triplet states of germanium and silicon monoxide (a³Σ⁺,b ³Π) to select metal atoms. In this study, the Group IIIA metal atoms were chosen as the energy receptors for the energy transfer-pump sequence. Excited triplet states were generated from the Ge-O₃, Ge-N₂, Si-N₂O, and Si-NO₂ reactions; the bulk of the experimental results was obtained with a germanium-based system. The energy stored in the long-lived triplet states is transferred to pump X²P_1/2 thallium, indium, and gallium atoms to their lowest lying ² S_1/2 states. The authors observe a system of temporal behavior which suggests the creation of a population inversion producing a gain condition and forming the basis for full cavity oscillation on the Tl 7²S_1/2-6P _3/2 transition at 535 nm     

Experiments on a semiconductor laser pumped rubidium atomic clock

Experiments were carried out to evaluate the performances of a semiconductor laser pumped rubidium (⁸⁷Rb) atomic clock. Two kinds of Rb gas cells were used and their performances were compared [gas cell A (natural rubidium (⁸⁷Rb/⁸⁵Rb =frac{3}{7}) and buffer gases) and gas cell B (⁸⁷Rb and buffer gases)]. The highest microwave frequency stabilities were estimated as3.4 times 10^{-12} tau^{-1/2}and2.7 times 10^{-12} tau^{-1/2}at the optimal gas cell temperatures of 60°C and 48°C for the gas cellsAandB, respectively (τ: integration time). The light shift, i.e., microwave frequency shift induced by laser light, was measured as -0.50 Hz/MHz and -0.11 Hz/MHz for the gas cellsAandBat their optimal operating conditions given above. As an improved experiment by utilizing high temporal coherence of the laser, a novel double resonance spectral line shape with a drastically narrower linewidth was demonstrated. A technique, similar to FM laser spectroscopy, was employed for this purpose by utilizing laser FM sidebands which are induced by microwave frequency modulation and nonlinear susceptibility of three-level⁸⁷Rb atoms. The minimum linewidth obtained was 20 Hz, which can be used as a sensitive frequency discriminator for an improved⁸⁷Rb atomic clock.     

Optical absorption and stimulated emission of neodymium in yttriumorthosilicate

A spectroscopic investigation of the biaxial crystal yttrium orthosilicate doped with Nd³⁺(Nd³⁺:Y₂SiO₅) has been performed. Spectrally and orientationally resolved emission cross sections necessary for the evaluation of laser performance on the Nd^{3+ 4}F_3/2-⁴I _9/2 and ⁴F_3/2-⁴I_11/2 transitions have been determined. The Judd-Ofelt theory has been applied to measured values of optical absorption line strengths to obtain the orientation averaged intensity parameters: Ω₂-3.34×10^-20 cm², Ω ₄=4.35×10^-20 cm², and Ω₆=5.60×10^-20 cm². These Judd-Ofelt intensity parameter values are significantly different from those previously reported by A.M. Tkachuk et al. Using these intensity parameters, the Nd^{3+ 4}F₂ metastable state lifetime is predicted to be 225 μs. Measured low Nd concentration ⁴F_3/2 lifetimes of 214 μs indicate a high radiative quantum efficiency. Because of the Stark level splitting of the Nd^{3+ 4}F_3/2 and ⁴I_9/2 manifolds, laser operation at twice one of the Cs atomic resonance filter acceptance wavelengths is possible     

Coset correlation of m-sequences

It is well-known that there exists a unique shift l of the m-sequence S(k) such that the value of S₀(k)=S(k+l) is only determined by the cyclotomic coset to which k belongs. A measure called the `coset correlation' is introduced. It is proven that the shift l can be determined by the coset correlation     

Focused codes for channels with skewed errors

Consider a channel with inputs and outputs in the field F _q(q>2). It is said that the channel is skewed on a set B⊂F_q* if the additive noise generated by the channel is likely to lie in B, i.e. B is a set of common errors. The concern is the construction of focused codes that are appropriate for such channels. It is said that a code is (t₁,t₂)-focused on B if it can correct up to t₁+t₂ errors provided at most t₁ of those errors lie outside of B; the strategy is to offer different levels of protection against common and uncommon errors and so provide novel tradeoffs between performance and rate. Techniques for constructing focused codes and bounds on their rates are described     

A dispersion formula satisfying recent requirements in microstripCAD

A dispersion formula ϵ^*_eff(f)=ϵ^* -{ϵ^*-ϵ^*_eff(0)}/{1+( f/f₅₀)^m}, for the effective relative permittivity ϵ^*_eff(f) of an open microstrip line is derived for computer-aided design (CAD) use. The 50% dispersion point (the frequency f₅₀ at which ϵ^*_eff(f₅₀)={ϵ ^*+ϵ^*_eff(0)}/2}) is used a normalizing frequency in the proposed formula, and an expression for f₅₀ is derived. To obtain the best fit of ϵ ^*_eff(f) to the theoretical numerical model, the power m of the normalized frequency in the proposed formula is expressed as a function of width-to-height ratio w/ h for w/h⩾0.7 and as a function of w /h, f₅₀, and f for w/h⩽0.7. The present formula has a high degree of accuracy, better than 0.6% in the range 0.1<w/h⩽10, 1<ϵ^*⩽128, and any height-to-wavelength ratio h/λ₀     

InGaAs/InAlAs/InP collector-up microwave heterojunction bipolartransistors

Collector-up InGaAs/InAlAs/InP heterojunction bipolar transistors (HBTs) were successfully fabricated, and their DC and microwave characteristics measured. High collector current density operation (J_c>30 kA/cm²) and high base-emitter junction saturation current density (J₀>10^-7 A/cm²) were achieved. A cutoff frequency of f _t=24 GHz and a maximum frequency of oscillation f _max=20 GHz at a collector current density of J₀ =23 kA/cm² were achieved on a nominal 5-μm×10-μm device     

Secret key agreement by public discussion from common information

The problem of generating a shared secret key S by two parties knowing dependent random variables X and Y, respectively, but not sharing a secret key initially, is considered. An enemy who knows the random variable Z, jointly distributed with X and Y according to some probability distribution P_XYZ, can also receive all messages exchanged by the two parties over a public channel. The goal of a protocol is that the enemy obtains at most a negligible amount of information about S. Upper bounds on H(S) as a function of P_XYZ are presented. Lower bounds on the rate H (S)/N (as N→∞) are derived for the case in which X=[X₁, . . ., X _N], Y=[Y₁, . . ., Y_N] and Z=[Z₁, . . ., Z_N] result from N independent executions of a random experiment generating X_i, Y_i and Z_i for i=1, . . ., N. It is shown that such a secret key agreement is possible for a scenario in which all three parties receive the output of a binary symmetric source over independent binary symmetric channels, even when the enemy's channel is superior to the other two channels     

A construction of non-Reed-Solomon type MDS codes

A construction is presented of long maximum-distance-separable (MDS) codes that are not generalized Reed-Solomon (GRS) type. The construction uses subsets S,|S|=m of a finite field F=GF(q) with the property that no t distinct elements of S add up to some fixed element of F . Large subsets of this kind are used to construct [n=m+2, k=t+1] non-GRS MDS codes over F     

Anomalous gain in an isotopically mixed CO2 laser andapplication to absolute wavelength calibration

Measurements are reported on a grating-tuned CO₂ laser, containing an isotopic mixture of ¹⁶O¹²C¹⁶ O, ¹⁶O¹²C¹⁸O, and ¹⁸O ¹²C¹⁸O. The P₆ and R ₁₄ lines of ¹⁶O¹²C¹⁶O were found to have anomalously high intensities. These anomalies are produced by the near coincidence of the transition frequencies in two distinct isotopes, permitting them to act as a single indistinguishable population. These two lines can be used to identify the rotational quantum numbers in the P and R branch spectra, thereby permitting absolute wavelength calibration to be achieved     

High vibrational temperatures in optically-pumped CO2

A pulsed 4.3-μm CO₂ laser was used to optically pump mixtures of CO₂ and He, and create transient gain at 9 and 10 μm. A conventional continuous-wave CO₂ laser operating on both regular and sequence bands measures this transient gain, and determined the ν₃ (asymmetric stretching)-mode vibrational temperature T₃. The measured values of T ₃ are generally much higher than those attained in discharge-excited CO₂. It is shown that a Treanor distribution must be used to describe the populations in the ν₃ -mode when dilute mixtures of CO₂ in He are optically pumped to ν₃-mode temperatures of 3000 to 4000 K. Under these conditions the sequence-band gain coefficients are almost equal to those on the regular bands. The collisional relaxation of energy from the ν₃ mode shows evidence of fast V-T relaxation at high values of T₃, followed by a slower relaxation rate characteristic of the 00⁰1 population lifetime