高性能大功率白光LED XREWHT-L1

<正> 近年来,大功率白光LED 的发光效率有长足的进步。从原来的401m/W 提高到60lm/W、又从60lm/W 提高到80lm/W、某些1W 的冷白光 LED,在350mA 时其光通量≥100lm、即其发光效率可达100lm/W 以上。冷白光LED 的发光效率达到60～80lm/W 的水平是一个什     

超高亮度10W白光LED

<正> 随着半导体光电器件材料、结构设计、工艺及封装技术的发展,大功率白光 LED 的性能得到了快速发展。这不仅在单颗 LED的功率见长,并且在发光亮度、发光效率上及降低热阻上也有较大进展。本文介绍韩国首尔半导体公司推出的 Z-功率 LED 系列的 W724C0,它是一种超高亮度10W 冷白光 LED。它在2800mA 工作电流时,光通量为700lm(典型值)、900lm(最大值),发光效率可达70-90lm/W,这是目前发光亮度最大的10W     

白光LED荧光粉远场涂覆光学性质

研究了白光LED远场隔离封装中隔离距离对发光效率及相关色温(CCT)的影响。实验结果表明,低电流输入条件下,白光LED的发光效率随芯片表面到荧光粉层距离变化是非线性的,当芯片表面到荧光粉层距离为0.88mm时具有最佳发光效率74lm/W,白光LED相关色温随着距离的增加呈线性下降。这为白光LED的一次光学设计提供了实验依据。     

低成本LED驱动IC促进了照明领域的革新高效率的LED和驱动器实现了最大程度的节能

当今,商用LED的发光效率正接近荧光灯70～80 lm/W的效率.荧光光源是非常成熟的技术,未来很可能会有一些改进,而LED的发光效率(lm/W)每10年就以20倍的速度增加,并且这种趋势还会继续.     

一种护眼LED照明灯

<正> 大功率 LED 照明技术是近几年发展起来的一种新型半导体固态照明技术,其特点如下:(1)效率高:目前白色 LED 发光效率已实破120lm/W,是白炽灯15lm/W 的8倍,是荧光灯50lm/W 的2倍多,使用寿命是白炽灯的10倍以上;目前正在研发的新型 LED 把发光效率锁定在200lm/W     

欧司朗发布输入1A电流可获得191lm光通量的绿色LED

德国欧司朗光电半导体（OSRAM Opto Semiconductors GmbH）公司开发出1A驱动时光通量为191lm、发光效率481m/W、波长为527nm的绿色LED，并在美国拉斯维加斯举行的“ICNS-7”（2007年9月16-21日）展会上发表（演讲序号：D1）。芯片尺寸为1mm见方。350mA驱动时光通量为100lm、发光效率为81lm/W、波长为532nm。     

开关型LED灯驱动器HV992X系列

近年来，白光LED的发光强度及发光效率有很大的提高，小功率φ5的白光LED在20mA电流时的发光强度可达6000-8000mcd，一些视角小的白光LED可达15000～18000mcd，发光效率一般为30～40lm/W，高的可达90lm/W以上。另外，还开发出大功率1-10W的白光LED。在这种条件下，给开发新型LED灯创造良好的机会，相应地开发出各种用于LED照明灯的驱动器。本文介绍Supertex公司生产的HV992X系列开关型LED照明灯驱动器IC。     

新兴能源专栏(二)LED照明产业应用趋势分析

目前照明能源使用极为不具效率,使得照明能源消耗增加率,大于整体能源消耗增加率.为了控制照明能源消耗增加率,开发能源效率更佳光源对于解决全球能源短缺将有极大帮助.近年来LED发光效率呈现大幅度增长,以照明所需白光LED为例,商品化规格已达50 lm/W,超越目前常用白炽灯泡与卤素灯,日商Nichia预定于2006年底推出100lm/W产品上市,其发光效率与常用荧光灯相当.且依据理论来推算,白光LED发光效率极大值为199 lm/W,未来仍有相当大进步空间.     

基于高温制备的氧化钙镁复合薄膜光电特性研究

采用电子束蒸镀工艺制备氧化钙掺杂氧化镁复合介质保护膜并深入分析了制备温度对该复合保护膜透过率及二次电子发射效率的影响。实验表明,高温制备能够使复合薄膜表面形貌更为致密,结晶粒径增加,薄膜的透过率和发光效率提高。当制备温度为300℃时,复合薄膜的形貌更为致密平整,裕度从25V增加到32V,发光效率从1.70lm/W提高到1.91lm/W,提高了12.35%。     

新型介质阻挡放电平面光源高压窄脉冲逆变电源的设计与研究

为了提高介质阻挡放电型平面光源的放电效率,本文设计并给出了一种可用于介质阻挡型平面光源及基于介质阻挡原理的气体放电器件的高压窄脉冲产生电路.该逆变电路包含两个全桥逆变电路部分,通过控制两全桥逆变电路输出脉冲的相位差来实现高压窄脉冲的输出.设计并验证了基于12英寸介质阻挡放电平面光源的电路原型.实验结果表明,该逆变电路可以实现最小脉宽为800 ns,脉冲幅值为4.5 kV的高压窄脉冲;亮度及发光效率随工作频率的升高而升高;当输入功率为36.4W时,亮度可达3200 cd/m2,此时系统发光效率为13.4 lm/W.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

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正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its