Ge_(0.4)Si_(0.6)/Si超晶格光探测器与Si波导的集成探讨:光场分析

对Ge0.4Si0.6／Si超晶格探测器光场进行了分析，并用京传播法（BPM）进行模拟。还探讨了这种探测器与Si波导的集成。在Si波导满足单模传输的条件下，推出光场在探测器中达稳态分布时的传播距离。另外还提出了这种探测器的设计长度与波导尺寸之间的依赖关系。     

薄膜型热释电探测器红外响应模型分析

在进行热释电焦平面探测器ROIC（读出电路）设计时，必须充分考虑热释电探测器的红外响应特性，并根据探测器等效电路的SPICE模型进行设计仿真。从热释电探测器的热平衡方程出发，在Matlab平台上分析模拟了探测器对脉冲函数调制状态下的瞬态响应，并根据提供的薄膜材料参数在具体应用中建立了热释电探测器的等效电路模型。把探测器等效电路模型与SFD（源跟随器）型输入单元读出电路连接后进行模拟仿真，分析了不同条件下热释电探测器／读出电路组件的响应特性。     

CO_2激光武器系统用光伏HgCdTe探测器

ＣＯ＿２激光武器系统用光伏ＨｇＣｄＴｅ探测器魏建华，庄继胜，陈淑英（昆明物理研究所昆明６５０２２３）本文简述了光伏ＨｇＣｄＴｅ探测器在ＣＯ＿２激光武器系统中的应用，介绍了找们在这种探测器研制方面的进展及国内外现状，最后论述了这种探测器在外差探测方面的...     

光电探测器中的非线性光学效应

文中报导了激光与光电探测器相互作用瞬间（不考虑温升或未产生温升）可能产生的记忆，光学饱和、混优、受激光散射等一系列非线性光学效应；给出了某些光伏、光导型探测器以及CCD的光学饱和阈值，记忆效应和混优效应对光电探测器工作的影响，受激光散射可能对光电探测器造成的破坏作用等。     

高速高灵敏度红外探测器

美帝贝尔电话研究所制成了高速高灵敏度的红外探测器。这种探测器使用了一种热电性能良好的单晶铌酸锶钡(SBN)。用热辐射的方法加热这种单晶时会产生热电现象。温度变化越大,产生的热电现象越强。铌酸锶钡单晶产生的热电效应约为其他晶体的10倍。与通常的红外探测器不同,使用这种单晶的热电探测器无须冷却到液氦温度,可在室温下工作。     

BDI 型甚长波IRFPA 读出电路研究与设计

针对甚长波红外（VLWIR）探测器动态结阻抗过低、暗电流较大,且工作在高背景环境下等特点,设计了一种具有记忆功能背景抑制的3232甚长波红外焦平面（IRFPA）读出电路。该电路采用基于高增益负反馈运放的缓冲直接注入级（BDI）结构作为输入级,大幅降低了输入阻抗,提高了注入效率,并使探测器处于稳定偏压状态。同时,该电路采用具有记忆功能的背景抑制电路,有效提高了积分时间和红外焦平面的信噪比（SNR）,改善了动态范围和对比度。基于HHNECCZ6H0.35m1P4M标准CMOS工艺,完成了电路的流片制造。实测结果表明:50K低温下电路功能正常,输出范围大于2V,读出速率达到2.5MHz,RMS噪声小于0.3mV,线性度优于99%,功耗小于100mW。     

量子阱红外光电探测器的非线性特征

人们对量子阱红外光电探测器在热成像方面的应用潜力具有一定的认识，但对这种器件的非线性特征及其潜在的应用却研究得很少。目前，德国和加拿大已联合研制出一种能够对皮焦耳范围的中红外脉冲进行表征的量子阱红外光电探测器。据参加研制工作的有关专家称，这种光电探测器包含三个等距的能级（见图1），     

红外相机用低温致冷可调节孔径

红外相机的重要部件是红外光电探测器。红外光电探测器可以敏感到由被成像的目标或场景发射的热辐射。然而，红外相机外壳自身发射的热辐射也会到达光电探测器。这种不希望有的热辐射会对相机的工作产生负面影响，因此需要将红外光电探测器密封在一种辐射屏蔽结构中，而且这种辐射屏蔽结构必须是红外光电探测器能“看见”的唯一相机内部结构。“冷光阑”（致冷孔径的简称）便是外部辐射通过聚焦光具到达红外光电探测器的唯一通路。     

光辐射治疗（PRT）中光动力学效应累积现象的初步探讨

光辐射（Photoradiation Therapy。PRT）是恶性肿瘤治疗中的新进展。PRT对癌细胞和生物分子的杀伤效应是可见光（包括某些激光）和光敏染料（如吖啶橙、荧光素、HPD等）共同作用的结果。这种可见光和光敏染料结合后发生的光动力学效应，在一定条件下可表现出累积现象。我们对这一现象做了初步观察。     

激光刻蚀实现硅的近红外响应

美国科学家利用能提高硅电．池效率的微结构方法，拓宽硅光电探测器的光谱响应范围。这种微结构硅光电探测器的响应波长在1．31～1．55gm，可以用于许多特殊的图像领域。（Appl．Phys．Lett．89033506）     

高工作温度碲镉汞红外探测器研究进展

高工作温度碲镉汞红外探测器作为最近来发展起来的新型探测器,在保证性能不变的基础上,实现了尺寸小、重量轻、功耗低等功能,成为军事侦察、无人机、无人平台的重要探测器件。本文阐述了高工作温度碲镉汞红外探测器的基本原理,重点介绍了碲镉汞P-on-N红外探测器的器件结构设计,并且对美国Raytheon、法国Sofradir、德国AIM、美国Teledyne、美国DRS等公司的研究进展进行了综述性介绍。     

面向高工作温度应用的带间级联红外光电器件

高温工作探测器是第三代红外焦平面发展的重要方向之一.带间级联探测器结合了势垒结构与多级吸收区结构的特点,通过多量子阱弛豫和隧穿实现光生载流子单方向输运,可以有效降低来自PN结耗尽区的产生-复合暗电流;利用多级短吸收区结构,在扩散长度很短的情况下仍然可以有效地收集光生载流子,从而可以提高探测器在高工作温度下的探测性能.本...     

640×486 long-wavelength two-color GaAs/AlGaAs quantum wellinfrared photodetector (QWIP) focal plane array camera

We have designed and fabricated an optimized long-wavelength/very-long wavelength two-color quantum well infrared photodetector (QWIP) device structure. The device structure was grown on a 3-in semi-insulating GaAs substrate by molecular beam epitaxy (MBE). The wafer was processed into several 640×486 format monolithically integrated 8-9 and 14-15 μm two-color (or dual wavelength) QWIP focal plane arrays (FPAs). These FPAs were then hybridized to 640×486 silicon CMOS readout multiplexers. A thinned (i.e., substrate removed) FPA hybrid was integrated into a liquid helium cooled dewar for electrical and optical characterization and to demonstrate simultaneous two-color imagery. The 8-9 μm detectors in the FPA have shown background limited performance (BLIP) at 70 K operating temperature for 300 K background with f/2 cold stop. The 14-15 μm detectors of the FPA reaches BLIP at 40 K operating temperature under the same background conditions. In this paper we discuss the performance of this long-wavelength dualband QWIP FPA in terms of quantum efficiency, detectivity, noise equivalent temperature difference (NEΔT), uniformity, and operability     

HgCdTe多层异质结红外探测材料与器件研究进展

HgCdTe多层异质结技术是未来主流红外探测器发展的重要技术方向,在高工作温度、双/多色和雪崩光电管等高性能红外探测器中扮演着重要的角色。近年来基于多层异质结构的HgCdTe高工作温度红外探测器得到了快速发展,尤其是以势垒阻挡型和非平衡工作P+-π(ν)-N+结构为主的器件受到了广泛的研究。本文系统介绍了势垒阻挡型和非平衡工作P+-π(ν)-N+结构HgCdTe红外探测器的暗电流抑制机理,分析了制约两种器件结构发展的关键问题,并对国内外的研究进展进行了综述。对多层异质结构HgCdTe红外探测器的发展进行了总结与展望。     

高工作温度锑化物红外探测器研究进展

随着材料制备和器件工艺技术的进步,制冷型红外探测器向着体积小、重量轻、低功耗、高性能和低成本的目标迈进。锑化物材料因其自身特殊的能带结构以及优异的光学性能,在低暗电流和高工作温度应用方面有巨大的发展潜力,可满足多种应用场景的需求。因此,开展高工作温度锑化物红外探测器的研究,具有非常重要的意义。本文综述了高工作温度锑化物红外探测器的发展状况,并对未来的发展趋势进行了展望。     

碲镉汞高温红外探测器组件进展

高工作温度红外探测器组件是第三代红外探测器技术的重要发展方向,可用于高工作温度红外探测器的基础材料主要有锑基和碲镉汞两大类。介绍了昆明物理研究所在高工作温度红外焦平面探测器组件方面的最新研究进展,其中基于碲镉汞材料p-on-n技术研制的高工作温度中波640×512探测器组件在150 K温区性能优异,探测器的噪声等效温差(NETD)小于20 mK,配置了高效动磁式线性制冷机的高温探测器组件(IDDCA结构),质量小于270 g,探测器组件光轴方向长度小于70 mm(F4),室温环境下组件稳态功耗小于2.5 Wdc,降温时间小于80 s,声学噪声小于27 dB,探测器光轴方向自身振动力最大约1.1 N。目前正在进行环境适应性和可靠性验证,完成后就可实现商用量产。     

Large VLWIR Hg1−xCdxTe photovoltaic detectors

Very long wavelength infrared (VLWIR; 15 to 17 μm) detectors are required for remote sensing sounding applications. Infrared sounders provide temperature, pressure and moisture profiles of the atmosphere used in weather prediction models that track storms, predict levels of precipitation etc. Traditionally, photoconductive VLWIR (λ_c >15 μm) detectors have been used for sounding applications. However, photoconductive detectors suffer from performance issues, such as non-linearity that is 10X – 100X that of photovoltaic detectors. Radiometric calibration for remote sensing interferometry requires detectors with low non-linearity. Photoconductive detectors also suffer from non-uniform spatial optical response. Advances in molecular beam epitaxy (MBE) growth of mercury cadmium telluride (HgCdTe) and detector architectures have resulted in high performance detectors fabricated in the 15 μm to 17 μmm spectral range. Recently, VLWIR (λ_c ∼ 17 μm at 78 K) photovoltaic large (1000 μm diameter) detectors have been fabricated and measured at flux values targeting remote sensing interferometry applications. The operating temperature is near 78 K, permitting the use of passive radiators in spacecraft to cool the detectors. Detector non-AR coated quantum efficiency >60% was measured in these large detectors. A linear response was measured, while varying the spot size incident on the 1000 μm detectors. This excellent response uniformity, measured as a function of spot size, implies that low frequency spatial response variations are absent. The 1000 μm diameter, λ_c ∼ 17 μm at 78 K detectors have dark currents ∼160 μA at a −100 mV bias and at 78 K. Interfacing with the low (comparable to the contact and series resistance) junction impedance detectors is not feasible. Therefore a custom pre-amplifier was designed to interface with the large VLWIR detectors operating in reverse bias. A breadboard was fabricated incorporating the custom designed preamplifier interfacing with the 1000 μm diameter VLWIR detectors. Response versus flux measurements were made on the large VLWIR detectors and non-linearity <0.15% was measured at high flux values in the 2.5×10¹⁷ to 3.5×10¹⁷ ph-cm⁻²sec⁻¹ range. This non-linearity is an order of magnitude better than for photoconductive detectors.     

中红外GaInAsSb PIN多结光伏探测器设计与数值模拟

从非平衡载流子的扩散 -复合理论出发 ,提出 PIN多结探测器材料结构 ,并建立了理论模型进行定量计算 ,从理论上解决了不能同时兼顾增大量子效率与光电增益和降低噪声的矛盾。利用该模型对 Ga In As Sb材料体系作了数值模拟 ,单结器件性能的计算值和实测值基本吻合 ,并根据多结器件模拟结果设计了工作于2 .4μm波段的 Ga In As Sb PIN多结材料结构     

An infrared image converter equipped with an array of extrinsic silicon photodetectors

A scanning infrared image converter is described in which the line scanning is performed by sampling of the signals from a one-dimensional array of identical detectors, thus eliminating the need for a fast mechanical line scanning device. Gallium-doped silicon acting as an extrinsic photoconductor at an operating temperature of 4°K has been chosen as a detector material. A temperature resolution of 0.1-0.2°C at a speed of 50 frames/s is obtained with the apparatus. This limitation of the resolution can be ascribed to errors in the gain adjustment of the preamplifiers, the noise equivalent temperature difference of the detectors being much lower than the experimental temperature resolution value.     

Design of a micromachined thermal accelerometer: thermal simulation and experimental results

This paper describes numerical simulation of a micromachined thermal accelerometer and experimental measurements. The sensor principle consists of a heating resistor, which creates a symmetrical temperature profile, and two temperature detectors symmetrically placed on both sides of the heater. When an acceleration is applied, the free convection is modified, the temperature profile becomes asymmetric and the two detectors measure the differential temperature. This temperature profile and sensor sensitivity according to the distance heater-detector have been studied using numerical resolution of fluid dynamics equations with the commercial code CFD2000/STORM: it shows that the optimum distance between the temperature detectors and the heater is about 300 μm. A thermal accelerometer with 3 pairs of detectors placed at 100, 300 and 500 μm from the heater was manufactured using the techniques of micromachining silicon and experimental measurements have shown a good agreement with the numerical simulations: the experimental optimum distance between heater and detectors seems to be close to 400 μm and the differential temperature of detectors is about 3 °C/g for an operating heater power of 54 mW and an heater temperature rise ΔT of 238 °C. The electrical sensitivity is then 2.5 mV/g.