共查询到19条相似文献,搜索用时 78 毫秒
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Alix L Paultre 《今日电子》2004,(8):29-29
针对目前多由气体激光器来满足的应用需求,电信设备制造商日本电报电话公司NTT(位于日本东京)开发出了一种能够制作可生成指定波长的固态激光器的技术,这是以往采用半导体器件所无法实现的。这项技术将半导体的性能优势引入了过去无法使用此类器件的应用领域。 相似文献
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In this paper, the semiconductor optical amplifier is analyzed for in-line and pre-amplifier for wavelength division multiplexing (WDM) transmission having minimum crosstalk and power penalty with sufficient gain. It is evaluated that the cross gain saturation of the SOA can be reduced by settling crosstalk at lower level and also minimizing the power penalty by slight increase in the confinement factor. At an optimal confinement factor of 0.41069, high amplification is obtained up to saturation power of 20.804 mW. For this confinement factor, low crosstalk of −9.63 dB and amplified spontaneous emission noise power of 119.4 μW are obtained for −15 dBm input signal. It has been demonstrated for the first time that twenty channels at 10 Gb/s WDM can transmit up to 5600 km by use of this optimization. In this, cascading of in-line SOA is done at the span of 70 km for return zero differential phase shift keying modulation format with the channel spacing of 100 GHz. The optical power spectrum and clear eye are observed at the transmission distance of 4340 and 5600 km in RZ-DPSK system. The bit error rate for all channels increases more than 10−10 with the increase in launched input power. 相似文献
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可调谐外腔半导体激光器(ECLD)中的波长选择元件(如光栅,F-P标准具等)所选择的波长函数具有一定的频谱宽度,为实现连续调谐该宽度就应足够小,作为首次尝试,在研究了确保ECLD能在激光二极管的以共振长振荡所需的条件后,我们导出该谱宽不能超过的上限值。 相似文献
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本文根据量子理论的薛定谔方程,推导出在有限深势阱条件下载流子满足的能量本征值方程,并给出理论计算结果,为设计用于泵浦固体激光器的激光二极管提供了理论依据。 相似文献
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基于半导体激光器的单模速率方程,采用典型参数对其进行建模仿真,仿真结果表明:半导体激光器在初期的光子受激辐射速率随着注入电流的增大而增加,上升时间随着注入电流的增大而减少。但对于固定功率限制范围的半导体激光器,不能通过直接增大注入电流来减少上升时间,考虑到半导体激光器的发热问题,提出了一种在正常脉冲发光电流前端加入冲击电流来减少半导体激光器发射脉冲上升时间的方法,保证了半导体激光器的稳定输出。通过仿真对该方法进行验证,并对型号为PLTB450B半导体激光器进行了测试。仿真结果与测试结果均表明:通过加入冲击电流的方法,可以大大减少固定功率的半导体激光器发射脉冲的上升时间。 相似文献
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The paper mainly deals with theoretical investigations of the effect of the thickness change of the waveguide layers on the threshold current. It is analyzed according to the result of a numerical simulation that asks how does the shift of the active region position affect the threshold current for a single quantum well (SQW) and double quantum well (DQW) laser diode (LD) with a relatively narrow waveguide. It is found that the variation trend of threshold current and optimum position of QW are different in SQW and DQW LD with 0.2 μm-thick waveguide, which may be due to the higher variation rate of optical loss in DQW LD with the shift of the active region. It is also found that in terms of either SQW or DQW LD, the variation tendency of the threshold current with a different loss coefficient of the p-cladding layer makes little difference for the relatively narrow waveguide LD. Moreover, the variation trend of the threshold current and the optimum position of QW is almost the same in SQW and DQW LD with 0.8 μm-thick waveguide, because the optical loss is small enough and the threshold current is dominated by the optical confinement factor (OCF) in QW. 相似文献