纺织基底无芯片RFID 湿度传感器

研制了一种无湿敏材料的纺织基底无芯片RFID 湿度传感器用于检测环境湿度。通过射频仿真软件 HFSS,获得谐振频率在2. 45 GHz 具有较高品质因数的纺织基底谐振器模型,对以谐振频率偏移量作为灵敏度指标 的检测原理进行了仿真。利用丝网印刷工艺和刻绘工艺分别在不同类型纺织物上制作了无芯片RFID 湿度传感器, 系统研究了制作工艺、纺织品类型和厚度对传感器湿敏特性的影响。结果表明,0. 5 mm 厚度下不同基底类型湿度传 感器的灵敏度由高至低依次为:棉基底、亚麻基底、聚酯纤维基底,恢复特性呈相反顺序,其中棉基底传感器在高湿 范围内平均灵敏度达3. 8 MHz/ %RH,聚酯纤维基底传感器恢复度达86%;相同类型的棉纺织基底下基底厚度越大, 平均湿度灵敏度越高,恢复特性越差。传感器稳定性测试表明传感器具有较好的中长期稳定性。对纺织基底湿度 传感器的感湿机理进行了分析,纺织纤维中的亲水基团与水分子间形成氢键,改变了基底的介电参数,传感器的湿 敏特性与组成纺织品的纤维成分、纤维细度、编织方式有关。     

表面处理对液晶显示阵列基板中黑矩阵残留的影响

主要分析了黑矩阵残留程度与SiNx、SiON、SiOx等基底表面亲水特性的关系,研究了等离子体处理对基底表面亲水特性以及黑矩阵残留的影响。首先,通过原子力显微镜和扫描电子显微镜对黑矩阵在不同基底表面的残留颗粒大小、表面粗糙度进行了测试。然后,使用接触角测试仪对不同基底表面的亲水特性进行了表征,分析了表面亲水特性和黑矩阵残留程度的关系。最后,研究了等离子体处理条件对基底表面亲水特性的影响,提出了采用O2/He等离子体对基底表面进行改性来解决黑矩阵的残留问题。实验结果表明:基底表面的水接触角越小、亲水性越强,黑矩阵在基底表面的残留越少;O2/He等离子体表面处理使基底表面的水接触角从17°降低到3°,增强了基底表面的亲水特性,并且黑矩阵工艺之后基底表面的粗糙度从3.06nm降低到0.69nm,消除了黑矩阵的残留。     

弱吸收单面薄膜光学特性的表征方法

光谱法是测量光学薄膜光学性能的重要方法之一,能够直接表征薄膜-基底系统的光学特性,如:反射率、透过率和吸收率。通过研究薄膜-基底系统的光传输特性,推导出在基底具有弱吸收的一般条件下薄膜-基底系统反射率、透射率和吸收率的表达式,确定了通过测量单面和双面抛光基底及其薄膜特性间接获得薄膜单面光学特性的方法;在实验中使用Lambda-900分光光度计对熔融石英基底的HfO2薄膜进行了测试,并通过测量误差分析,薄膜的单面反射率误差为1.00%,单面透过率的误差为0.601%。研究结果表明文中方法可适用于各类薄膜单面特性的表征与评价。     

SU-8胶与基底结合特性的实验研究

SU-8胶是一种负性、环氧树脂型、近紫外线光刻胶。它适于制作超厚、高深宽比的MEMS微结构。为电铸造出金属微结构，通常需要采用金属基底。但SU-8胶对金属基底的结合力通常不好，因而限制了其深宽比的提高。从SU-8胶与基底的浸润性、基底表面粗糙度以及基底对近光紫外光的折射特性入手，对SU-8胶与基底的结合力进行分析，首次指出：在近紫外光的折射率高的基底与SU-8胶有很好的结合性。经实验得出经过氧化处理的TI片的SU-8胶的结合性强。这有利于为MEMS提供低成本，高深宽比的金属微结构。     

室温相变氧化钒薄膜的制备及其CO2激光毁伤试验

军事目标的抗强激光毁伤是亟待解决的热点难点问题,利用氧化钒的相变特性进行激光防护是当前这一领域的热点之一。本文采用直流磁控溅射加后续热处理的方法在普通玻璃基底上制备了氧化钒薄膜,通过测量其电阻温度特性曲线来观测其相变特性,并利用功率为8.9 W、光斑直径为4.4 mm的二氧化碳连续激光分别照射用作基底的普通玻璃和制备的相变氧化钒薄膜样品进行激光毁伤试验。试验数据显示该薄膜的相变温度约为30°C,薄膜的双向光谱反射率在相变前后分别为13.48%和76.4%,用作基底的玻璃在激光照射7.5 s后破碎,而制备的薄膜样品在照射38 s后才破碎。这表明本文制备的室温相变氧化钒薄膜在相变后具有高反射特性,从而具有一定的抗强激光毁伤能力。     

基于红外光谱偏振度对比度的涂层材质识别研究

为了降低材质红外识别的正确率,较常用的方法是通过在材质表面涂覆涂层,以改变材质的表面发射率。首先通过基于微面元理论的目标材质表面红外辐射偏振传输模型的Stokes表达式,推导分析了目标材质表面发射率对目标材质表面红外偏振特性的影响,结果表明:目标材质表面发射率的改变不影响其表面的红外线偏振度特征;其次,针对材质表面发射率与红外偏振特性的不相关性,文章提出基于光谱偏振度对比度检测涂层材质的方法,并通过相同基底不同表面发射率的涂层材质、不同基底相同发射率的涂层材质的红外高光谱偏振成像特性进行了验证分析,结果表明:改变涂覆材料表面发射率并不影响材质表面的红外光谱偏振度特征;基底材料不同,即使目标材质表面涂覆相同发射率涂层,其表面的光谱偏振度特性将比光谱辐射亮度具有更明显的差异性,研究成果可为红外伪装材质检测识别提供新的途径和方法。     

六边形开口谐振器的太赫兹特性

电磁超材料通常是由一些在介质基底表面上周期分布的亚波长谐振器组成的。它的特性在很大程度上取决于基底的性质和谐振器的结构细节。由于开口环谐振器(SRRs)可实现多种功能,因此在超材料中应用广泛。通过设计一种二维六边形SRRs阵列,利用时域有限差分方法(FDTD)研究了单元开口形式、单元周期和介质基底性质对其传输特性的影响。研究结果表明,开口形式可使超材料在1~2.5 THz处产生谐振响应,且介质基底的性质对该谐振特性的影响权重较大。     

基于光学读出非制冷红外成像系统的无基底FPA等效电学模型

与传统的有基底FPA(焦平面阵列)相比, 基于全镂空支撑框架结构的新型无基底FPA在热学特性上存在显著差异, 传统的基于恒温基底假设的热学分析模型不再适用, 因此, 通过电学比拟方法, 将无基底FPA的热响应特性等效为电学模型.通过该模型, 进一步分析了无基底FPA在非真空环境下的热学性能, 分析表明: 该无基底FPA具有在大气压下优良的红外成像性能, 其NETD(噪声等效温度差)值仅比真空环境下增加了数倍.     

圆柱型涂层/基底系统中的激光超声表面波

为了分析圆柱型涂层/基底系统中声表面波的特点及其传播特性,以热弹激发机理为基础建立了脉冲激光在圆柱型涂层/基底系统中激发超声表面波的有限元程序。在此基础上,计算了激光在铝(涂层)/镍(基底)和镍(涂层)/铝(基底)系统中激发的超声表面波波形,它们分别对应了硬涂层系统和软涂层系统。结果表明,圆柱型涂层/基底系统中的超声表面波是色散的,并且其色散特性由弯曲柱面引起的几何色散和涂层/基底系统引起的色散共同决定,这使得圆柱型涂层系统中色散特性远比板状涂层系统杂,不存在简单的正常和反常色散规律。     

基于高阻抗表面PBG结构微带天线的设计与分析

以高介电常数介质为基底,利用辐射贴片开槽和微带馈电技术,设计了一款尺寸仅为16mm×12.45mm的小型微带天线。通过在此天线微带贴片周围加载高阻抗表面型光子晶体,有效抑制了表面波,改善了以高介电常数介质为基底的贴片天线的性能,实现了一款多频小型化PBG天线。HFSS仿真结果表明,加载高阻抗表面结构后的微带天线出现了三个谐振频点,分别为2.74、2.86和3.80GHz,其对应的增益分别达到6.02、8.38和5.69dB。所设计的光子晶体天线物理尺寸较小,方向性良好且具有多频特性,因此可为实际通信天线的应用提供参考。     

纳米压印制作半导体激光器的分布反馈光栅

分布反馈(DFB)光栅的制作是半导体激光器芯片的关键工艺,通过纳米压印技术在InP基片表面涂覆的光刻胶上压印出DFB光栅图形,并分别通过湿法腐蚀和干法刻蚀技术将光栅图形转移到InP基片上。所制作的DFB光栅周期为240nm(对应于1 550nm波长的DFB激光器),光栅中间具有λ/4相移结构。采用纳米压印技术制作的DFB光栅相对于通常双光束干涉法制作的光栅具有更好的均匀性以及更低的线条粗糙度,而且解决了双光束干涉法无法制作非均匀光栅的技术难题。相对于电子束直写光刻法,采用纳米压印技术制作DFB光栅具有快速与低成本的优势。采用纳米压印技术在InP基片上成功制作具有相移结构的DFB光栅,为进一步进行低成本高性能的半导体激光器芯片的制作奠定了良好基础。     

Analysis of the blazing effect in second-order gratings

The validity of the blazing effect for improving the output-coupling efficiency of second-order gratings for use in grating-coupled surface-emitting lasers is examined. The Floquet-Bloch expansion method is used for the analysis of finite-length gratings with asymmetric tooth shapes operated in resonance condition. It is shown that for saw-tooth gratings the blazing effect is almost lost around the second-order Bragg wavelength because the reflected guide mode generated in the distributed Bragg reflector radiates preferentially into the substrate. By using a parallelogram grating with equal tooth and groove lengths, however, a high efficiency of radiation into the air is attainable even at the Bragg wavelength while the reflectivity is reduced     

Template‐Free Vibrational Indentation Patterning (VIP) of Micro/Nanometer‐Scale Grating Structures with Real‐Time Pitch and Angle Tunability

A template‐free, high‐throughput patterning technique named vibrational indentation‐driven patterning (VIP), which achieves continuous, period‐tunable fabrication of micro/nanometer‐scale grating structures, is reported. In VIP, a tilted edge of a hard material vertically vibrating at high frequency makes periodic indentations onto a moving substrate of any material softer than the tool, thereby continuously creating grating patterns at high speed. By modulating the tool vibration frequency, substrate feeding rate, and the tool tilting angle, the period‐variable chirped gratings and angle‐tunable blazed gratings can be easily achieved; they can be utilized in various optoelectronics and photonics applications. As an example, an infrared polarizer directly fabricated from the VIP‐created blazed grating is demonstrated.     

Nanoplasmonic-gold-cylinder-array-enhanced terahertz source

Photoconductive antennas (PCAs) based on nanoplasmonic gratings contact electrodes have been proposed to satisfy the demand for high power, efficiency and responsivity terahertz (THz) sources. Reducing the average photo-generated carrier transport path to the photoconductor contact electrodes was previously considered the dominant mechanism to improve PCAs'' power. However, considering the bias in a real device, the electric field between gratings is limited and the role of surface plasmonic resonance (SPR) field enhancement is more important in improving THz radiation. This paper, based on SPR, analyzes the interaction between incident light and substrate in nano cylinder array PCAs and clearly shows that the SPR can enhance the light absorption in the substrate. After the optimization of the structure size, the proposed structure can offer 87% optical transmission into GaAs substrate. Compared with conventional PCAs, the optical transmission into the substrate will increase 5.8 times and the enhancement factor of substrate absorption will reach 13.7 respectively.     

软X射线偏折仪用自支撑莫尔光栅研制

介绍了莫尔光栅制作的主要方法和进展。利用紫外光刻、离子束刻蚀技术制作自支撑金莫尔光栅，讨论了金膜厚度要求、电镀金膜质量和光栅占空比控制等影响莫尔光栅质量的关键技术问题。实验结果表明，通过设计较小占空比的光栅掩模、紫外光刻时擦除基片边缘的光刻胶棱以消除衍射效应、离子束刻蚀时基片倾斜一定的角度旋转刻蚀等措施可以改善自支撑金莫尔光栅的占空比。     

Broadband absorption of graphene from magnetic dipole resonances in hybrid nanostructure

As emerging new material, graphene has inspired great research interest. However, most of the studies focused on how to improve the absorption efficiency of graphene, but payed little attention on broadening absorption bandwidth while ensuring high absorption efficiency. In this work, we proposed a hybrid nanostructure, which not only can improve absorption efficiency but also can increase absorption bandwidth. The proposed hybrid nanostructure consists of a monolayer graphene sandwiched between three Ag gratings with different widths and a SiO2 spacer on a Ag substrate, these three gratings and substrate can excite three independent magnetic dipole resonances. In our calculations, we numerically demonstrate the proposed hybrid structure can achieve graphene absorption bandwidth of 0.311 μm in near-infrared region with absorption exceeding 30%. We also studied absorption peaks dependence on gratings widths and SiO2 spacer thickness, and explained the results using physical mechanism. Our research can provide a theoretical guidance for future device preparation.     

Selective area growth of GaAs with semiconductor-metal-semiconductor structures using pulsed-mode operation of MOCVD

Selective area growth of GaAs with semiconductor-metal-semiconductor structures using pulsed-mode operation of MOCVD, which controls the flow of trymethylgallium (TMG) at regular intervals, is reported. GaAs is selectively grown over tungsten gratings on (100) GaAs substrates. Tungsten gratings are masked with SiO₂ for the selective growth and it is possible to have good GaAs growth over W gratings without keeping the substrate temperature high and the growth rate low. The ideality factor and the barrier height of the W-GaAs Schottky diode in-situ annealed under the growth conditions show slight degradation with increased growth time. Using double crystal x-ray diffractometer and Auger electron spectroscopy analysis, it is shown that the interdiffusion of W and GaAs takes place. A vertical FET is fabricated to show the device application of this selective growth method.     

Femtosecond laser fabrication of Bragg gratings in borosilicate ion-exchange waveguides

Ultrafast 800-nm radiation from a Ti : sapphire amplifier was used to write high reflectivity Bragg gratings in silver ion-exchange waveguides made in a borosilicate glass substrate. The fabrication and visual/spectral characterization of the grating structures are presented. The measurements show low polarization effects in the grating spectral characteristics.     

Fabrication of second-order gratings for 1.55 μm DFB lasersusing deep UV lithography

Second-order gratings for 1.55 μm DFB lasers have been fabricated on InP substrate using contact deep UV (220 nm) lithography. Localised gratings with a 0.48 μm pitch were clearly resolved in PMMA photoresist and then transferred in InP by wet chemical etching     

Lithium–Niobate Channel Waveguide for the Realization of Long-Period Gratings

We propose a special lithium-niobate (LiNbO₃) single-mode waveguide for the realization of long-period gratings, which consists of a channel core embedded in a thin slab cladding. We fabricated the waveguide on a z-cut LiNbO₃ substrate with a two-step proton-exchange process and demonstrated its suitability for grating application with a number of removable photoresist long-period gratings deposited on the waveguide surface. The waveguide fabrication process and the LiNbO₃ waveguide structure could be further explored for the development of electrooptic gratings for high-speed applications.