关节镜下钬激光治疗半月板损伤

目的 :总结和探讨关节镜下钬激光治疗半月板损伤的手术疗效。方法 :2 0 0 0年 1月 - 2 0 0 3年 12月 ,对 18例半月板损伤患者行关节镜下钬激光治疗。结果 :随访 6 - 18个月 ,平均 12个月 ,Neer评分法对手术疗效进行分析 ,优良率为 94 .4 %。结论 :关节镜下钬激光治疗半月板损伤操作简便 ,手术时间短 ,有较好术后疗效 ,是一种安全有效的手术工具。     

超脉冲CO2激光治疗鼾症68例报告

目的自1998年6轮?001年6月,应用超脉冲CO2激光行下悬雍垂腭咽成形术,治疗鼾症68例,术后随访6～24个月,临床症状改善率达76%.结论本方法操作简单,安全可靠,疗效确切,术后并发症少.     

毒蛇咬伤的救治及护理

1　临床资料与急救处理本科自 2 0 0 0年 6月到 2 0 0 3年 6月成功救治、护理 3 6例毒蛇咬伤患者。本组患者 3 6例 ,男 2 0例 ,女 16例。年龄 17-5 6岁 ,3 6例均为下肢咬伤 ,所有患者经积极抢救 ,精心护理全部治愈。1.1　早期缚扎〔1〕　应争取在咬伤后立即在距伤口上方 3～lOcm处扎止血带 ,松紧以能阻断淋巴及静脉的回流 ,不妨碍动脉血流为宜 ,每隔 15min放松 2～ 3min。1.2　伤口的处理　彻底清洗伤口。患者入院后立即用 3 %双氧水冲洗伤口 ,也可用肥皂水或生理盐水洗净消毒后 ,以蛇咬痕为中心在局麻下作“十”字切口切开排毒。1.3　季德…     

FK506和环孢素A抗肾移植排斥反应的疗效观察及护理

1　对象和方法1999年 8月至 2 0 0 1年 4月 ,肾移植术前监测血糖、肝功能正常 ,肾移植术后服用FK5 0 6抗排斥治疗 34例 ,肾移植术后服用CsA抗排斥治疗 38例 ,其中男性 4 0例 ,女性 32例 ,年龄 19～ 6 5岁 ,平均 35 .2± 7.1岁。供受者组织配型良好 ,群体反应性抗体阴性 ,淋巴细胞毒性试验 ,<10 % ,供肾热缺血时间 3～ 17min ,平均 10 .4± 2 .9min ,供肾冷缺血时间 6～ 2 0小时 ,平均 7.5± 3.5小时。两组病例在年龄、性别、原发疾病、组织配型、群体反应性抗体、淋巴细胞毒性试验、冷 /热缺血时间、术式、术后辅助治疗方面差异均无显著性…     

低能量He—Ne激光照射治疗腋臭术后创面延迟愈合的临床观察

1　临床资料1 1　观察对象 :1 999年 6月～ 2 0 0 0年 1 2月 ,我科共收治 2 1例腋臭切除术后创面延迟愈合的患者 ,其中男性5例 ,女性 1 6例 ,平均年龄 2 5岁。 2 1例均为外院行腋臭手术治疗后 3周以上创面仍未完全愈合的病例 ;其中双侧未愈合者 6例 ,单侧未愈合者 1 5例。1 2　方法 :①创口的处理 :常规用碘酒、酒精消毒创口周围皮肤 ,用生理盐水棉球沾净创口内的分泌物 ,剪去坏死组织。根据创口情况选择用药 :( 1 )创口平浅 ,肉芽组织颜色鲜红、呈细颗粒状 ,分泌物少 ,易出血 ;用凡士林纱布换药 ;( 2 )局部分泌物较多且炎症重 ,肉芽组织…     

60Co放疗对鼻咽癌患者中耳功能的影响

目的 :研究放射治疗对鼻咽癌患者中耳功能的影响。方法 :5 0例鼻咽癌患者接受放疗前、放疗后 1年、放疗后 2年听力及中耳功能检测。结果 :中耳压力 :放疗前 (- 78± 6 9)dapa,放疗后一年为 (- 193± 98)dapa,放疗后 2年为 (- 12 2± 84)dapa(p <0 .0 1)。声顺值 :放疗前 (- 0 .98± 0 .6 7)ml,放疗后一年下降为 (0 .5 6± 0 .74)ml,放疗后两年 (0 .73± 0 .6 9)ml(p <0 .0 1)。放疗后中耳病变及耳聋比例增加 (P <0 .0 1)。结论 :放疗可造成中耳及耳蜗功能损害 ,加重鼻咽癌患者耳聋发生。     

2002年IEEE MTT-S会议消息

(International Microwave Symposium)2 0 0 2年国际微波会议 (IMS2 0 0 2 )将于 2 0 0 2年 6月 2日至 7日在美国华盛顿州西雅图召开。有关会议信息见网页 :www.ims2 0 0 2 .org征文要求 :论文均需通过网址以电子稿件形式投寄 (Electronic Paper Submission) ,不接受硬拷贝 (hardcopies)、书面文字以及传真稿等。文稿形式 :分为论文 ,短文和交流讨论三种。截稿日期 :doc形式　　　　 2 0 0 1年 11月 2 6日pdf形式　　　　 2 0 0 1年 12月 3日涉及的技术领域 :电磁场分析、计算机辅助设计、无源微波元件、有源微波元件、毫米波技术、高速…     

CO2激光器治疗皮肤性病的应用体会

1　临床病例及常见术后反应病例资料。汉中市中医医院皮肤性病科从 1998年 12月～ 2 0 0 1年 12月共用激光治疗皮肤性病 6 30例。其中尖锐湿疣410例 (外阴 2 70例 ,外阴和阴道 6 5例 ,外阴、阴道和尿道 5 0例 ,肛周及直肠 2 5例 ) ;直肠息肉 8例 ;宫颈息肉 10例 ;宫颈糜烂 5 0     

实验动物瘢痕模型经90Sr照射后超微结构的变化

目的 :观察实验动物微型猪瘢痕模型经90 Sr照射后的超微结构改变 ,从形态学角度探讨90 Sr防治瘢痕的作用机制以及最有效治疗时间和剂量 ,为临床应用提供形态学基础。方法 :采用西双版纳微型猪 ,于面部、背部两侧制作 1cm× 2cm、深达皮下组织的创口数个 ,随机分为实验组和对照组。实验组于术后 1周用90 Sr敷贴器照射 ,剂量分别为 2 0 0、4 0 0、6 0 0、80 0、1 0 0 0、2 0 0 0、4 0 0 0cGy。然后在照射后 1 ,3,7,1 1周 (即术后 2 ,4 ,8,1 2周 ) ,分别切取对照组和实验组的瘢痕组织 ,进行透射电镜 (TEM)观察。结果 :小、中剂量 ( 2 0 0～ 6 0 0cGy) 90 Sr显著促进伤口毛细血管和成纤维细胞增生 ,成纤维细胞表现为数量多 ,体积大、粗面内质网增多并扩张 ,胶原纤维排列致密 ;大剂量 ( 80 0～ 2 0 0 0cGy) 90 Sr照射能显著抑制成纤维细胞增生 ,表现为数量少 ,体积小 ,粗面内质网欠丰富 ,核异染色质丰富 ,胶原纤维排列稀疏。结论 :小中剂量90 Sr照射能促进成纤维细胞合成胶原纤维 ,从而促进伤口愈合 ,临床上可在伤后早期进行照射 ,剂量为 2 0 0～ 6 0 0cGy ;大剂量90 Sr照射可抑制成纤维细胞合成胶原纤维的能力。为防治瘢痕过度增生 ,临床上可在伤口愈合后进行照射 ,剂量为 1 0 0 0～ 2 0 0 0cGy。     

紫外线氦氖激光预防皮肤软组织创伤术后感染50例

1　资料与方法临床资料 :创伤患者 5 0例均来源于本院急诊科 ,年龄 10～ 6 0岁 ,上肢创伤 2 5例 ,下肢创伤 2 0例 ,全身多发性创伤 5例 ,患者多在创伤后 1～ 6小时内入院诊治。治疗方法 :患者首先在急诊科注射ＴＡＴ抗毒血清并行常规清创缝合术 ,术后第一天采用冷光紫外线机 ,波长 5 3 7ｎｍ ,灯距 1ｃｍ ,视伤口情况照射剂量为 5～ 10个ＭＥＤ ,隔日 1次 ,递增 30 % ,2次后改用低功率氦氖激光机 ,波长 6 32 8ｎｍ ,输出功率 2 0ｍＷ ,光斑直径 3ｃｍ ,功率 2 83ｍＷ ,能量密度 1 9Ｊ/ｃｍ2 ,视病灶大小分区照射 ,距离 70ｃｍ ,每区 10分…     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

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正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its