Optimization of moth‐eye antireflection schemes for silicon solar cells

Nanostructured moth‐eye antireflection schemes for silicon solar cells are simulated using rigorous coupled wave analysis and compared to traditional thin film coatings. The design of the moth‐eye arrays is optimized for application to a laboratory cell (air–silicon interface) and an encapsulated cell (EVA‐silicon interface), and the optimization accounts for the solar spectrum incident on the silicon interface in both cells, and the spectral response of both types of cell. The optimized moth‐eye designs are predicted to outperform an optimized double layer thin film coating by approximately 2% for the laboratory cell and approximately 3% for the encapsulated cell. The predicted performance of the silicon moth‐eye under encapsulation is particularly remarkable as it exhibits losses of only 0·6% compared to an ideal AR surface. Copyright © 2010 John Wiley & Sons, Ltd.     

Optimization of broadband omnidirectional antireflection coatings for solar cells

Broadband and omnidirectional antireflection coating is generally an effective way to improve solar cell efficiency, because the destructive interference between the reflected and incident light can maximize the light transmission into the absorption layer. In this paper, we report the incident quantum efficiency η_in, not incident energy or power, as the evaluation function by the ant colony algorithm optimization method, which is a swarm-based optimization method. Also, SPCTRL2 is proposed to be incorporated for accurate optimization because the solar irradiance on a receiver plane is dependent on position, season, and time. Cities of Quito, Beijing and Moscow are selected for two- and three-layer antireflective coating optimization over λ = [300, 1100] nm and θ = [0°, 90°]. The η_in increases by 0.26%, 1.37% and 4.24% for the above 3 cities, respectively, compared with that calculated by other rigorous optimization algorithms methods, which is further verified by the effect of position and time dependent solar spectrum on the antireflective coating design.     

Antireflection and light trapping of subwavelength surface structures formed by colloidal lithography on thin film solar cells

In this paper, we present a novel design of a surface nanostructure that suppresses the reflectivity and provides forward diffraction for light trapping. The structure under study comprises periodic nanoislands fabricated using self‐assembly polystyrene spheres, which are applicable to large‐area fabrication. We also show preliminary fabrication results of the proposed structure. The periodic nanoislands reduce the reflectivity through gradient effective refractive indices and enhance light trapping through diffraction in a periodic structure. We first systematically study the antireflection and light trapping effects using a rigorous coupled‐wave analysis and then calculate the short‐circuit current density of a 2‐μm‐thick crystalline silicon with periodic nanoislands and an aluminum back reflector. The optimum short‐circuit current density with periodic nanoislands achieves 25 mA/cm² theoretically, which shows a 76.9% enhancement compared with that of bare silicon. Moreover, the structure also provides superior photocurrent densities at large angles of incidence, compared with conventional antireflection coatings. Copyright © 2011 John Wiley & Sons, Ltd.     

二维亚波长抗反射光栅的制作及其特性分析

运用等效介质理论研究了占空比随深度变化的二维亚波长光栅的抗反射原理。对全息干涉法制得的正弦型光栅进行了详细分析,表明这类光栅形成了渐变折射率的抗反膜结构。设计并利用两柬相干光对称入射到记录介质（光刻胶）分两次曝光的全息方法制备了适用于可见波段的周期为310nm的二维正交正弦型光栅。测试结果表明这种光栅在整个可见光波段具有增透作用,有潜力作为传统抗反膜的替代品。将具有浮雕结构的记录介质为母版并采用模压或浇铸等方法,可将结构复制到其它材料上。这类抗反射材料具有制作简单、成本低、可大批量生产等优点。     

高线密度X射线透射光栅的制作工艺

采用电子束光刻、X射线光刻和微电镀技术,成功制作了面积为10mm×0.5 mm,周期为500nm,占空比为1∶1,金吸收体厚度为430nm的可用于X射线衍射的大面积透射光栅.首先利用电子束光刻和微电镀技术制备基于镂空薄膜结构的X射线光刻掩模,然后利用X射线光刻经济、高效地复制X射线透射光栅.整个工艺流程分别利用了电子束光刻分辨率高和X射线光刻效率高的优点,并且可以得到剖面陡直的纳米级光栅线条.最后,测量了制作出的X射线透射光栅对波长为11nm同步辐射光的衍射峰,实验结果表明该光栅具有良好的衍射特性.     

高线密度X射线透射光栅的制作工艺

采用电子束光刻、X射线光刻和微电镀技术,成功制作了面积为10mm×0.5 mm,周期为500nm,占空比为1∶1,金吸收体厚度为430nm的可用于X射线衍射的大面积透射光栅.首先利用电子束光刻和微电镀技术制备基于镂空薄膜结构的X射线光刻掩模,然后利用X射线光刻经济、高效地复制X射线透射光栅.整个工艺流程分别利用了电子束光刻分辨率高和X射线光刻效率高的优点,并且可以得到剖面陡直的纳米级光栅线条.最后,测量了制作出的X射线透射光栅对波长为11nm同步辐射光的衍射峰,实验结果表明该光栅具有良好的衍射特性.     

晶体硅表面纳米孔减反光结构的制备及其性能表征

利用金属辅助硅化学刻蚀法在晶体硅表面制备 了 大面积有序硅纳米结构,并基于金属辅助硅化学刻蚀的机理,实现了硅纳米结构从线阵列到 孔阵列转变。漫反射光谱的测试结果表 明,相对于平面、金字塔结构,硅纳米孔织构的晶体硅具有卓越的减反光性能,在300100nm 光谱范围内的AM1.5G太阳光子的光反射损失比低于3.6%。硅纳米孔阵列减反光性能优异, 制备方法简单、快速,且其孔壁互连,有益于晶体硅太阳电池的后续制备工艺及其表面结构 机械稳定,可作为减反光结构应用于晶体硅太阳电池。     

Optimum antireflection coatings for heteroface AlGaAs/GaAs solar cells—Part II: The influence of uncertainties in the parameters of window and antireflection coatings

This paper details both theoretical and experimental results of an enhanced model to design MgF₂/ZnS double-layer antireflection coatings for AlGaAs/GaAs heteroface solar cells. The main contribution of this work is that a method for taking technological tolerances or uncertainties into account in the optically relevant parameters for antireflection coating design is presented. This is done by the calculation of contours of quasi-optimum performance for a certain range of variation of the uncertain parameters. A number of experiments testing different aspects of the predictions made by the model are commented on, showing good agreement with the calculated performance. Unwanted window oxidation, described in Part I of this work, has proven to be the key factor influencing quasi-optimum contours.     

电子束光刻制备5000line/mm光栅掩模关键技术研究

为了制备高线密度X射线透射光栅掩模,分析了电子束光刻中场拼接对高线密度光栅图形的影响;利用几何校正技术和低灵敏度的950 k的PMMA电子束抗蚀剂,克服了电子束的邻近效应对厚胶图形曝光的影响.采用电子束光刻和微电镀的方法制备了5 000line/mm x射线透射光栅的掩模,并将栅线宽度精确控制在100 nm～110 nm,为X射线光刻复制高线密度X射线透射光栅创造了有利条件.     

Highly controllable ICP etching of GaAs based materials for grating fabrication

Highly controllable ICP etching of GaAs based materials with SiCl₄/Ar plasma is investigated. A slow etching rate of 13 nm/min was achieved with RF1 = 10 W, RF2 = 20 W and a high ratio of Ar to SiCl₄ flow. First order gratings with 25 nm depth and 140 nm period were fabricated with the optimal parameters. AFM analysis indicated that the RMS roughness over a 10 × 10 μm² area was 0.3 nm, which is smooth enough to regrow high quality materials for devices.