Flexible electrophoretic display driven by solution-processed organic TFT with highly stable bending feature

A highly reliable solution-processed organic thin film transistor (OTFT) and its backplane are fabricated for a flexible electrophoretic display (EPD) on a plastic substrate. The all-solution-processed OTFT with an anthradithiophene derivative exhibits excellent bendability for an extreme cyclic bending stress of 100,000 cycles with a radius of 4 mm without a significant change in its electrical properties. Process technology using an industrially suitable Cu electrode has also been developed to replace the high work-function material as well as to obtain a low-resistance signal line in the OTFT array. The present TFT exhibits a highly stable threshold-voltage shift (ΔV_T) of less than 2 V under long-span bias stress exposure with competitive performance to serve as a switching device in an EPD, even if it was fabricated at a low temperature of less than 140 °C. An ultra-thin flexible OTFT backplane with Cu electrodes has been successfully achieved via plastic processing technology by releasing a polyimide (PI) substrate from glass without degradation in device performance, which demonstrates a commercially suitable handling process of the thin plastic for flexible device applications. Finally, we demonstrate a 3.5-inch flexible EPD with good bendability, which indicates the great potential of solution-processed organic TFTs as a promising element of flexible electronics as well as a backplane unit from the viewpoint of commercialization.     

微杯电子纸及其后加工制程

SiPix利用独特的微杯(Microcup)结构和顶部灌注封装技术，通过连续整卷高速涂布的制程成功地制造出高性能的双稳性、装填电泳微粒的电子纸。SiPix可提供下列两种规格形式任意的EPD卷式成品：(A)用于有源矩阵EPD和直接驱动产品的可剥离保护膜／已灌装及密封的Microcup／无图案导体膜夹层卷；及（P）用于无源矩阵的行导体膜／已灌装及密封的Microcup／列导体膜夹层卷。已经开发出将EPD卷制成不同的显示模块或产品的简单的后续加工制程。     

彩色电子纸的基础物理与操作原理

电泳式电子纸作为一种重要的反射式显示技术,已被广泛应用于电子阅读器等低功耗的显示器件中。单色电泳式电子纸从实验室走向产业化的成功催生了彩色电子纸的发展,以满足人们对反射式显示器的多样需求。然而,在成功实现彩色化之前,还有许多挑战性的问题仍待克服。为了实现电子纸的彩色化显示,本文首先介绍电泳式电子纸的基本操作原理、包括粒子带电机制,粒子表面改性等。然后,针对电子纸在驱动过程中产生的"鬼影"现象和反射率峰突现象进行了驱动波形的分析设计与优化,消除了峰突的同时仅牺牲了4%的峰值反射率。最后,我们对电子纸彩色化方案进行讨论,并首次提出将转印工艺技术与电泳式电子纸相结合,成功制备了边长为300μm的方块彩色微胶囊子像素阵列,实现了空间混色的彩色电泳式电子纸,测得其NTSC的色域在三色子像素结构下为13.7%,较于已报道的基于CF彩色电子纸的3.14%有明显提升。     

柔性显示技术研发现状及发展方向

分析了近几年柔性显示技术的市场规模,并对未来市场做了展望及预测。全面地研究、分析、总结了主流的八种柔性显示技术(有机电致发光显示、电泳显示、TFT-LCD显示、无机电致发光显示、电子粉流体显示、干涉调制显示、电致变色显示、等离子管阵列显示等)的显示原理、研发现状、国内外主要研发机构及相关产品/样品模型,提出了对应柔性显示技术未来研发方向及思路。并对另外两种柔性显示技术(光子晶体显示及电润湿显示)做了技术原理、研发现状及研发方向等的研究与分析。最后对柔性显示技术研发中的共性焦点问题和未来关键研发思路及方向做了分析与论述。     

分段显示器成就各式智能面板

电子纸（EPD）技术有一些瑕疵．缺乏市场成熟性。电子纸用户是少数,围绕EPD的生态体系和下层基础构建还在发展中,比如LCD显示器拥有众多的标准驱动电路支持,但可以设想,EPD的瑕疵会随着市场的发展而淡化。EPD的其它缺陷还包括有电压要求：即高压驱动（〉10V）,尽管驱动电流非曾低。随着时间推移EPD比其它显示媒介缩短了响应时间。当然,尽管存在这些缺点,但都会在：降来得到改正,EPD为各种创新应用提供了独到的方案。分段式EPD凭据其超薄、不规謦性、柔韧性能,可为各种类型的显示器提供高对比显示,通过运用低功耗电子系统来匹配低功耗图形显示,设计师可以实现产品便携和长寿电池的双重性能。     

基于光学的真三维触控定位与识别方法研究

通过介绍真三维显示技术与无标记空间定位原理,提出了真三维两点触控实现方法,搭建了真三维两点触控定位与识别系统。针对真三维空间定位绘制、空间两点跟踪和手势识别问题,研究了真三维两点触控交互方法。实验证明,在不需要佩戴任何标记和传感器的条件下,基于光学的空间两点触控方法与系统能够满足真三维显示的人机交互要求,且环境光的变化不干扰人机交互的操作。     

Balance prosthesis based on micromechanical sensors using vibrotactile feedback of tilt

A prototype balance prosthesis has been made using miniature, high-performance inertial sensors to measure lateral head tilt and vibrotactile elements mounted on the body to display head tilt to the user. The device has been used to study the feasibility of providing artificial feedback of head tilt to reduce postural sway during quiet standing using six healthy subjects. Two vibrotactile display schemes were used: one in which the individual vibrating elements, called tactors, were placed on the shoulders (shoulder tactors); another in which columns of tactors were placed on the right and left sides of the trunk (side tactors). Root-mean-square head-tilt angle (Tilt) and center of pressure displacement (Sway) were measured for normal subjects standing in a semi-tandem Romberg position with eyes closed, under four conditions: no balance aids; shoulder tactors; side tactors; and light touch. Compared with no balance aids, the side tactors significantly reduced Tilt (35%) and Sway (33%). Shoulder tactors also significantly reduced Tilt (44%) and Sway (17%). Compared with tactors, light touch resulted in less Sway, but more Tilt. The results suggest that healthy normal subjects can reduce their lateral postural sway using head tilt information as provided by a vibrotactile display. Thus, further testing with balance-impaired subjects is now warranted.     

Au and non-Au based rare earth metal-silicide ohmic contacts to p-InGaAs

The aim of this study is to improve the electrical properties of ohmic contacts that plays crucial role on the performance of optoelectronic devices such as laser diodes (LDs), light emitting diodes (LEDs) and photodetectors (PDs). The conventional (Pd/Ir/Au, Ti/Pt/Au and Pt/Ti/Pt/Au), Au and non-Au based rare earth metal-silicide ohmic contacts (Gd/Si/Ti/Au, Gd/Si/Pt/Au and Gd/Si/Pt) to p-InGaAs were investigated and compared each other. To calculate the specific contact resistivities the Transmission Line Model (TLM) was used. Minimum specific contact resistivity of the conventional contacts was found as 0.111 × 10⁻⁶ Ω cm² for Pt/Ti/Pt/Au contact at 400 °C annealing temperature. For the rare earth metal-silicide ohmic contacts, the non-Au based Gd/Si/Pt has the minimum value of 4.410 × 10⁻⁶ Ω cm² at 300 °C annealing temperature. As a result, non-Au based Gd/Si/Pt contact shows the best ohmic contact behavior at a relatively low annealing temperature among the rare earth metal-silicide ohmic contacts. Although the Au based conventional ohmic contacts are thermally stable and have lower noise in electronic circuits, by using the non-Au based rare earth metal-silicide ohmic contacts may overcome the problems of Au-based ohmic contacts such as higher cost, poorer reliability, weaker thermal stability, and the device degradation due to relatively higher alloying temperatures. To the best of our knowledge, the Au and non-Au based rare earth metal-silicide (GdSi_x) ohmic contacts to p-InGaAs have been proposed for the first time.     

Growth-direction-dependent characteristics of Ge-on-insulator by Si–Ge mixing triggered melting growth

The lateral liquid-phase epitaxy of Ge-on-insulator (GOI) using Si seeds has been investigated as a function of the Si-seed orientation and the growth direction. Giant single-crystalline GOI structures with ∼200 μm length are obtained using Si(1 0 0), (1 1 0), and (1 1 1) seeds. The very long growth is explained on the basis of the solidification temperature gradient due to Si-Ge mixing around the seeding area and the thermal gradient due to the latent heat around the solid/liquid interface at the growth front. In addition, growth with rotating crystal orientations is observed for samples with several growth directions. The rotating growth is explained on the basis of the bonding strength between lattice planes at the growth front. This rotating growth does not occur in any direction for (1 0 0) orientated seeds. Based on this finding the mesh-patterned GOI growth with a large area (250 μm × 500 μm) is demonstrated.     

基于FPGA的3D光立方设计

设计开发一种采用FPGA作为控制核心的3D光立方显示器方案。根据针对3维LED点阵进行动态图案显示的功能需求,对FPGA内部算法进行合理划分及处理,利用双NiosⅡ软核完成了高速图形处理及触摸屏、PS/2键盘、音频播放等大量外设接口,实现了一个完整的综合信息平台。结合3D贪吃蛇游戏、3D文字和图像动态显示等一些应用开发,本光立方显示平台提供了良好的用户视觉与娱乐体验。