基于IDDT和SVM的混合电路故障诊断探究

混合电路待测数据受限,存在故障诊断速度较慢、效率有限等问题,提出了一种基于动态电流测试结合支持向量机的混合电路故障诊断方法,其基本思想是运用小波分解提取混合电路动态电流的有效信息,再融合SVM进行故障诊断。采用标准样本Iris数据集研究、确定了多类支持向量机的算法,采用高斯径向基核函数,运用改进的网络搜索方法进行了粗搜索和细搜索,以确定出SVM的最佳参数对。PSPICE及MATLAB软件对混合电路实例的仿真表明,该方法模式识别能力较强,可改善BP神经网络的收敛速度慢和容易陷入局部极小值等不足,适用于混合电路故障的快速准确诊断。     

基于LMD和SVM算法的模拟电路故障诊断

对模拟故障电路进行特征提取与分类是模拟电路诊断的两个重要环节。现有方法多对时域响应信号进行小波变换以提取故障特征,并用神经网络或支持向量机方法实现对故障进行分类。为提高模拟电路故障诊断率,提出一种局域均值分解(LMD)与SVM相结合的新算法。该算法运用局域均值算法(LMD),将其自适应地分解为一系列单分量调幅-调频信号(PF),通过提取电路正常和故障状态的特征,运用SVM对其分类,获得诊断效率。仿真实验结果表明,该方法对模拟电路的故障诊断精度达到98%以上,适用于模拟电路的故障诊断。     

差分杂草算法优化SVM的模拟电路故障诊断

针对非线性模拟电路软故障检测和定位难题,提出一种差分杂草算法(DEIWO)优化支持向量机(SVM)的故障诊断新策略。首先利用递推最小二乘算法对电路Volterra级数时域核进行辨识提取故障特征,然后用差分杂草算法(DEIWO)优化支持向量机参数建立故障诊断模型,后对故障进行分类识别,完成故障诊断。仿真结果表明,该方法具有较高的准确率。     

基于输出频谱和支持向量机的模拟电路故障诊断方法

针对模拟电路的特点和其故障诊断中存在的问题,提出了一种基于输出频谱和支持向量机的新型模拟电路故障诊断方法(FMSVM)。该方法采用多音信号作为模拟电路的激励信号,并用其输出频谱中的有限个频率点的幅值作为故障特征,采用多分类支持向量机(MSVM)进行故障模式判别,实现了模拟电路的故障诊断。实验结果表明,该故障诊断方法具有速度快、准确率高的特点,具有重要的实用价值。     

基于RS-PSO-SVM集成的模拟电路软故障诊断

针对模拟电路软故障诊断准确度不高的问题,提出一种基于粗糙集(RS)-粒子群算法(PSO)-支持向量机(SVM)集成的模拟电路软故障诊断方法。首先利用粗糙集理论对采集的模拟电路软故障特征信息进行维数约简,然后利用粒子群算法对支持向量机的参数进行优化,以提高支持向量机分类器的诊断性能,最后进行故障诊断。对四运放双二次高通滤波器进行仿真,实验结果表明,基于RS-PSO-SVM集成的模拟电路软故障诊断方法是有效的。与其他常用方法相比,该诊断方法具有更好的故障诊断性能。     

基于参数优化支持向量机的矿用变压器故障诊断

支持向量机（Support Vector Machines,SVM）理论在变压器故障诊断中得到了越来越多的应用,由于变压器故障数据有限,在参数的优化选择方面还存在理论支持问题。为及时监测矿用变压器潜伏性故障和提高故障诊断效率,根据支持向量机原理,采用变压器故障时产生的氢气、甲烷、乙烷、乙烯、乙炔的浓度数据,本文提出了支持向量机的参数和参数的交叉验证算法,寻找最佳的参数和参数,利用优化后的参数对训练集进行训练,最终得到最佳的支持向量机模型,并对测试集进行分类,从而诊断出矿用变压器的故障类型。实例研究结果表明,该方法可行,具有较高的故障诊断准确率。     

基于小波与LS-SVM集成的模拟电路故障检测

由于模拟电路的多样性、非线性和离散性等特点,模拟电路的故障诊断呈现复杂、难以辨识等问题。针对已有方法的数据不平衡,提出了一种支持向量机集成的故障诊断方法。使用小波变换方法提取特征向量,在多类别支持向量机的基础上,设计了模拟电路的最小二乘支持向量机预测模型,实现了对模拟电路的状态的故障预测。将该方法应用于Sallen-Key带通电路进行故障预测试验,结果表明,该方法比单一支持向量机、径向基神经网络、BP神经网络和APSVM有更好的分类和泛化性能,故障诊断准确率更高。     

基于网格搜索的改进SVM模拟电路故障诊断方法

针对模拟电路故障识别与诊断问题,提出了一种基于K最近邻的一对一SVM分类器(KNN-OSVM)的故障诊断方法。将K最近邻算法与用网格搜索法优化后的一对一SVM模型相结合,建立KNN-OSVM模型,有效解决了SVM因存在不可分域造成的误分问题,提高了故障诊断率。采用小波分析法提取输出端电压信号作为故障特征值,采用网格搜索对核函数、惩罚参数寻优。采用两个模拟电路进行仿真实验,并将改进的SVM与传统SVM进行对比。结果证明了该故障诊断方法的可行性。     

基于小波高频系数统计特征的电路故障诊断

对故障电路进行特征提取与分类是模拟电路诊断的两个重要环节。现有方法多对时域响应信号进行小波变换以提取故障特征,并用神经网络或支持向量机方法实现对故障进行分类。为提高模拟电路故障诊断率,提出一种新的特征选取方法:在模拟电路的时域响应中对其进行小波变换,并对变换得到的高频细节系数统计平均值、标准偏差、峭度、熵和偏斜度等统计特征,并建立以支持向量机为分类器的故障诊断系统。以两种常见电路为例,实验结果表明,提出方法对常见电路进行故障诊断,准确率得到提升,精度达到99%以上,优于传统单纯小波系数分析方法,适用于模拟电路的故障诊断。     

基于随机森林算法的模拟电路故障诊断

为提高模拟电路参变故障的诊断率,提出基于多特征向量提取和随机森林(RF)算法的模拟电路故障诊断新方法。采用时域和频域特征向量组合的多维特征向量以反映不同故障特征,经RF算法进行决策,并对决策树棵数及候选特征向量个数进行优化。故障诊断实验结果表明,所提方法能较好地实现容差模拟电路故障诊断,与支持向量机(SVM)方法相比,表现出更好的分类性能;与小波(包)特征提取方法相比,简化了多维数据特征提取步骤,易于实现在线故障诊断。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and sub-pixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.