IGBT在雷达发射机中的应用

IGBT是一种综合性能十分优越的大功率开关管,广泛应用于大功率电子电路中,具有功率大、电压高、电流大、开关时间快等优点。本文介绍固态开关管IGBT在发射机几种典型类型的调制器电路中的应用方法和注意事项。     

IGBT关断过电压机理分析及保护研究

固态开关具有关断速度快、无电弧、智能性高等特点,能有效地满足微网对开关的要求。文中针对IGBT应用于固态开关的特点,对IGBT关断过电压的机理进行了分析,并设计了缓冲电路。经实验验证能够很好地解决IGBT关断过电压的问题,保证固态开关的安全可靠。     

高压大功率IGBT元器件开关特性的分析研究

自从IGBT器件出现之后,大量的研究人员对IGBT器件的开关特性进行了大量的研究,以便准确地预测和改善器件的开关瞬态特性.在实际应用中,IGBT器件的开关特性不仅和其物理结构、制作工艺以及工作的原理有着密切的关系,同时和其工作的环境也具有密切的关系.在IGBT器件工作的时候,常常受到驱动电压和电阻以及工作电压、集电极电流等的影响.因此研究工作环境对IGBT器件开关特性的影响,不断地改善其设计来优化其性能,成为研究的重点.论文详尽研究分析了功率器件IGBT的开关特性,对IGBT及其系统的理解、应用具有一定的指导意义.     

离线式IGBT开关特性测试技术综述

IGBT功率开关器件在现代大功率变换器中的应用非常广泛,其开关特性直接影响到变换器的性能。获得实际工作条件下的开关器件特性具有重要的实用价值。如何准确测量并记录器件开关过程自然成为研究热点。文中分析了IGBT器件开关特性测试中的关键问题,总结了大功率下电流电压测量的各种方法,并对国内外的开关特性测试研究现状进行了分类和总结。     

110kHz高重频多注速调管发射机

通过某110 kHz高功率多注速调管发射机的研制介绍了高重频发射机的设计要点,重点介绍了一种采用IGBT开关管串联组成的高重频高压固态浮动板调制器的设计,对调制器的电路组成和为实现高重频所采取的关键技术进行了简要的介绍,对发射机的主要组成、高压电源和撬棒保护电路等也进行了简要的介绍。试验结果表明,采用固态开关串联完全可取代传统的真空管开关,在高重频的大功率雷达发射机中稳定可靠工作。     

串联叠加式固态脉冲调制器的设计

介绍了固态调制器电路常用的拓扑结构,讨论了开关直接串联与加法器叠加两种拓扑结构的特点。设计了基于IGBT的串联叠加式固态刚管脉冲调制器,调制器通过充电电源变压器实现电位隔离,采用6路调制单元串联叠加,并利用脉冲变压器升压至40 kV。重点讨论了该类型调制器研制中的关键技术,分析了脉冲变压器铁芯饱和现象并提出解决方法;讨论了吸收电路的计算选取,给出了有无吸收电路时,IGBT的C、E两端电压波形;分析并解决了脉冲波形过冲控制以及电磁干扰噪声抑制问题。     

固态调制开关设计与实验

随着半导体器件研制及其应用的发展,使得以大功率半导体开关器件作为固态的调制开关,在高压脉冲调制器中的应用越来越多。基于模块化设计的思想,设计了基于金属氧化物半导体场效应晶体管(MOSFET)串联的固态调制开关模块,并讨论了该模块的技术难点,同时通过实验验证了单个固态调制开关模块的性能,在此基础上,进行两个固态调制开关模块串联的实验,进一步验证了其性能,并给出了实验波形。     

射频开关及其在通信系统中的应用

主要针对无线通信系统中的身频电子开关进行分类讨论。总结了射频开关的带宽、插入损耗、隔离度、功率容量、开关速度、VSWR、功耗、使用寿命和尺寸等主要性能指标。讨论了铁氧体／机械开关、固态开关(PIN开关和FET开关)和MEMS开关的工作机理、各项技术指标以及优缺点。列表比较了各类开关。简述了开关矩阵在未来无线通信系统阵列天线中的作用及应用。最后,指出了射频开关的发展方向和动态。     

软开关逆变器在电动汽车中的应用

对软开关逆变器在电动汽车电气驱动系统中的应用现状和发展方向进行了综述。指出由于电动汽车用逆变器功率多在几千瓦以上，功率器件多采用IGBT，且对体积、重量、冷却及成本有着严格要求，目前的软开关逆变技术尚未能在这些方面取得明显的综合优势。高功率密度、高效率以及高度集成和低成本的软开关逆变器将在电动汽车中占据重要地位。     

MOSFET和IGBT器件在开关电源中的一种应用方法及其仿真

为了降低开关电源中开关器件的开关损耗，介绍一种带辅助管的软开关实现方法，将IGBT和MOSFET这两种器件组合起来，以IGBT器件为主开关管，MOSFET器件为辅助开关管，实现零电流（ZCS）软开关模式。先从理论分析入手，提出电路形式以及开关方法，然后针对这种开关方法的不足之处，提出改进后的开关方法。交替开关方法。并在PSpice中对所有结论通过了仿真验证。     

为电流探头分析设计的60ns上升时间的1kA脉冲电流源

在电力电子应用方面，大电流和高带宽电流探头的运用是必须的，以便分析现代快速开关功率半导体器件的开关特性。目前普通的电流探头基本上可以达到每微秒10KA或更高。为了检测电流探头的可用性，象取样电阻、电流变换器或者Rogowski传感器，设计了电流源，它能产生以60纳秒上升的平顶为1KA脉冲。     

Boost ZCT-PWM变换器的改进及仿真分析

针对传统的Boost ZCT-PWM变换器中存在的主开关管硬开通和辅助开关管硬关断的问题,提出一种改进型的Boost ZCT-PWM变换器,使主开关管零电流开通,辅助开关管零电流通断,并且特别适用于IGBT作为开关器件的高电压、大功率应用场合。分析电路的工作原理并用PSpice仿真软件进行仿真研究。仿真结果表明所有开关器件实现了软开关,变换器的效率得到提高。     

Modeling buffer layer IGBTs for circuit simulation

The dynamic behavior of commercially available buffer layer IGBTs is described. It is shown that buffer layer IGBTs become much faster at high voltages than nonbuffer layer IGBTs with similar low voltage characteristics. Because the fall times specified in manufacturers' data sheets do not reflect the voltage dependence of switching speed, a new method of selecting devices for different circuit applications is suggested. A buffer layer IGBT model is developed and implemented into the Saber circuit simulator, and a procedure is developed to extract the model parameters for buffer layer IGBTs. It is shown that the new buffer layer IGBT model can be used to describe the dynamic behavior and power dissipation of buffer layer IGBTs in user-defined application circuits. The results of the buffer layer IGBT model are verified using commercially available IGBTs     

Predicted (on-time) equal-charge criterion scheme forconstant-frequency control of single-phase boost-type AC-DC converters

A new constant switching frequency control method for single-phase boost-type AC-DC power converters is presented. The on times of the converter switches in each switching period is determined such that the average input current tracks the reference template in every switching cycle. The problems encountered in achieving smooth and stable operation and the modifications made to overcome them are discussed. The simulation studies done on a power converter controlled with this method, which is known as the predicted (on-time) equal-charge criterion (PECC) method, indicate stable operation at different input-current and voltage levels and power factors. The method was implemented on an insulated gate bipolar transistor (IGBT) power converter rated at 1 kVA using a 80 386 processor system for computations. The experimental results are presented and discussed in this paper     

Novel zero-voltage and zero-current-switching full bridge PWMconverter using transformer auxiliary winding

A novel zero voltage and zero current switching (ZVZCS) full bridge (FB) pulse width modulation (PWM) converter is proposed to improve the demerits of the previously presented ZVZCS-FB-PWM converters, such as use of lossy components or additional active switches. A simple auxiliary circuit which includes neither lossy components nor active switches provides ZVZCS conditions to primary switches, ZVS for leading-leg switches and ZCS for lagging-leg switches. Many advantages including simple circuit topology, high efficiency, and low cost make the new converter attractive for high power (>2 kW) applications. The operation, analysis, features and design considerations are illustrated and verified on a 2.5 kW, 100 kHz insulated gate bipolar transistor (IGBT) based experimental circuit     

Solid state optical space switches for network cross-connect andprotection applications

Network protection and reconfiguration is becoming increasingly important in fiber optic communications systems. This is driven by the intense traffic and high cost of lost high-data-rate optical connections. Optical cross-connects at the nodes in transmission systems are developing rapidly in response. A key optical component required for these applications is an optical space switch. Since the required timescale of network reconfiguration at the optical level is on the order of 50 ms to prevent electrical intervention. The optical space switching speed must be approximately 5 ms or faster. The demand created by these applications has motivated the development of a solid state optical space switch based on a novel planar-waveguide technology. This planar integrated optics technology relies on the thermo-optic effect in specialized optical polymer materials and results in reliable optical space switches without moving parts to wear out. This article reviews the state of the art in solid state optical space switches based on thermo-optic polymers and applications of these switches in network communication systems. The same polymer-based planar waveguide technology used to make the solid state optical space switches of today provides the basis for WDM devices. Electro-optic modulators, and devices integrating several functions (space switching, wavelength multiplexing, light generation and detection) in one component in the years to come     

The dual gate power device exhibiting the IGBT and the thyristoraction

This new power device is fabricated and demonstrated for the first time. The device can behave as an insulated gate field-effect transistor (IGBT) or a thyristor by adding a second control gate. The characteristics obtained experimentally are that the forward voltage for the thyristor mode is 1.2 V at 100 A/cm², the device transits between two operation modes within only 200 ns, and the switching speed for the IGBT mode is the same as the usual IGBT. All these results indicate that the trade-off relation between the forward voltage and switching speed was greatly improved by the additional gate     

IGBT作为硬开关和软开关应用的模拟

建立了用ＰＳＰＩＣＥ软件包模拟ＩＧＢＴ特性的等效电路模型,并利用此模型模拟了ＩＧＢＴ的硬开关和软开关特性。模拟结果表明,ＩＧＢＴ作为硬开关的关断电流波形由器件本身决定;作为软开关的关断电流波形则由外电路决定,即由与器件相联接的缓冲电容Ｃｓ决定。得到的结论是,器件与电路的互相影响能够有效地用来折中器件的功率损耗与开关速度。     

一种紧凑型全桥DC-DC隔离电源设计

针对半桥IGBT集成驱动板上隔离电源及驱动板负载的特点,设计了一种两组磁芯共用一组高频全桥开关的DC-DC隔离电源。简洁的电路产生4路全桥驱动脉冲信号,无需隔离,实现了板上电源的紧凑设计,提高了功率密度。对关键信号的产生进行了仿真实验,结果表明,该电源电路简洁、高效、可靠,与IGBT半桥集成驱动板达到了良好的结合。