GSM系统频率同步的实现

在GSM系统中提出一种简单的频率同步算法,利用系统频率校正信道(FCCH)的信号特征估计接收信号的频率偏移,并通过频率补偿实现系统频率同步.仿真结果表明,该算法丢包率低,信噪比为8 dB时就可完全检测到FCCH;频偏估计和补偿效果好,降低了系统误码率.与传统的基于频域FCCH检测算法和最大似然匹配检测算法相比,所提算法基于时域信号处理,不需进行频域分析,其性能好且简单实用.     

一种OFDMA系统半静态干扰协调算法

为了解决多小区OFDMA系统边缘用户受到严重的同频干扰问题,提出了一种基于小区边缘用户数的半静态干扰协调算法SICUN。该算法用小区边缘用户数指示小区边缘业务量的大小,结合特定的频率资源优先级规划方案以确定系统中小区中心、边缘用户的可用频率资源,在此基础上进行了补偿式功率控制。仿真结果表明:SICUN能在保证小区边缘用户性能的前提下,较大地提高系统整体性能。     

OFDMA中继网络变时域节能资源分配策略

现有正交频分多址接入(OFDMA)中继网络资源分配的研究均采用固定时域配置下的频域分配和功率分配,不能很好适应用户业务在时域上的变化.该文针对OFDMA中继网络提出一种可最优节能的资源分配策略和一种简化的节能资源分配策略,为资源分配问题建立一般化的模型,即动态分配时域资源、频域资源和功率资源,所建模型具有很强的灵活性和适应性,不仅适用于固定时域分配系统,也适用于非固定时域分配系统.此外针对非满负荷业务,在保证用户服务质量的情况下,以节能为目标对无线非协作中继网络的资源分配进行能效最大化建模,使用拉格朗日乘数法对模型求解.考虑到算法复杂度,应用指派问题中的匈牙利算法设计出一种简化的资源分配策略.理论和仿真结果表明,最优节能资源分配算法能够得到能效的最大化,而简化节能资源分配算法与最优节能资源分配算法在能效上的差距不足5%,但算法复杂度得到了显著降低.而且,动态分配时域资源比固定时域分配对用户分布不均或链路分布不均有更强的适应性.     

IEEE802.16e系统上行链路初始测距算法研究

该文提出了一种适用于IEEE802.16e的OFDMA系统上行链路的初始测距频域改进算法。频域算法利用测距信号具有连续相位的特点,在频域将接收信号与备选码字共轭相关,按照接入用户信号的强弱依次检测出不同用户发送的码字和定时偏差,从而完成初始测距过程。改进频域算法在频域检测方法的基础上结合了串行干扰抵消的思想,提高了多用户同时接入系统时的正确检测概率,降低了虚警概率。通过仿真比较了改进算法和时域、频域算法的性能。结果表明,所提出的算法在计算复杂度和性能上兼有一定的优势。     

卫星OFDM系统的同步算法研究

定时偏差和频率偏移会造成OFDM系统性能严重恶化,研究了卫星OFDM系统的同步技术,使OFDM能适应卫星信道低信噪比环境,实现天地一体化通信网络的融合。在分析了现有的卫星信道条件下OFDM符号定时同步算法和载波频率同步算法性能的基础上,根据CAZAC序列相关峰位置受定时偏差和频率偏移的影响,设计了一种新的训练序列,并依新训练序列提出了一种改进的同步算法。仿真结果表明,在卫星信道下该算法在低信噪比时依然具有较高的符号定时同步和载波频率同步性能,并且在时域信号中就可以实现同步,相比其他在频域中实现同步的算法减少了复杂度。     

C/A码频域多普勒搜索FFT捕获算法

在研究GPS C/A码快速傅里叶变换(FFT)捕获算法的基础上,提出频域多普勒搜索捕获算法,和时域多普勒搜索算法相比,该算法捕获速度提高一倍,甚至更多.针对两个圆移频率分量之间损耗较大问题,提出通过实行不同的下变频,有效解决了损耗问题.MATLAB仿真验证了频域多普勒搜索FFT捕获算法的正确性和频率补偿的有效性.     

交织OFDMA上行系统CFO估计算法的研究

文中对OFDMA系统中的子载波分配方法进行了研究,介绍了两种子载波分配方法的原理,对两种子载波分配方法进行了仿真,结果显示在频率选择性衰落信道中交织分配的OFDMA系统要比块分配的OFDMA系统获得更多的频率分集.给出了交织OFDMA系统上行链路的信号结构,由于发射机和接收机之间存在的载波频率偏移(CFO)将会影响子载波间的正交性,对多用户的CFO估计提出了一种估计算法,仿真的结果显示所提出的算法具有较好的性能.     

MB-OFDM超宽带系统中模拟前端非理想因素的估计与补偿

解决模拟前端非理想因素:载波频率偏差、采样频率偏差以及I/Q失配对多带-正交频分复用超宽带系统的影响.提出时域载波频偏和I/Q失配估计和补偿方案.该方案包括一种能有效对抗大范围I/Q失配的数据辅助载波频偏估计算法,一种时域I/Q失配估计算法和一种2步式载波频偏、I/Q失配补偿算法.在频域,利用超宽带数据帧头的时域扩展特性进行残余载波频偏和采样频偏估计.仿真结果表明,即使存在较大非理想因素的情况下,提出的估计与补偿方案仍然能提供较好的系统误码性能.     

频率步进脉冲距离高分辨一维成像速度补偿分析

本文就频率步进脉冲距离高分辨一维成像的速度补偿的常用的几种方法(时域法,频域法,最小熵值法)进行了分析和比较。并就其中的时域法和频域法进行了改进,将二者结合起来,使之更有效地对速度进行估计。还分析了速度补偿的精度要求。     

基于无迹卡尔曼滤波的CO-OFDM系统相位噪声补偿算法

基于高阶正交幅度调制(QAM)和大线宽相干光正交频分复用(CO-OFDM)系统,提出了一种在时域进行无迹卡尔曼滤波(UKF)的相位噪声补偿算法。该算法在接收端基于训练符号频域卡尔曼滤波实现信道均衡,用较小的频域导频数据开销进行频域扩展卡尔曼滤波,先补偿公共相位误差(CPE)噪声,然后将CPE噪声补偿之后的数据在时域进行载波间干扰(ICI)相位噪声粗补偿。对相位噪声粗补偿后的频域数据进行预判决,结合接收端原始时域数据,在时域对判决后的数据进行UKF以实现ICI相位噪声的精细补偿。对精细补偿之后的频域数据再进行相位噪声粗补偿并进行迭代运算,极大地提高了相位噪声的补偿效果。对50Gbit·s-1的CO-OFDM系统进行了传输距离为100km的仿真,与其他算法相比,所提算法的频谱利用率极高,且具有较好的补偿效果。对激光器线宽为700kHz且调制方式为32QAM的传输信号进行二次迭代后,所提相位噪声补偿算法的误码率性能仍可达到前向纠错上限。所提算法促进了大线宽CO-OFDM系统在长距离接入网和城域网中的应用。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Call for Papers

正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its