共查询到19条相似文献,搜索用时 156 毫秒
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文章对隧道再生两个有源区内腔接触式垂直腔面发射激光器(VCSEL)光学特进行了研究。主要包括:通过纵向光场分布模拟分析了驻波效应;测量得到了VCSEL外延片量子阱增益谱峰值波长、谐振腔谐振波长、分布布喇格反射器(DBR)反射谱中心波长及材料的生长厚度偏差等重要信息,并结合增益谱,对该外延片制备的器件不激射的原因进行了分析解释。此外,对该外延片边发射模式特性进行模拟计算,由于DBR结构的存在,此结构的光场强度分布明显不同于普通的边发射激光器,模拟得到的远场发散角与测量结果相吻合。 相似文献
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VCSEL的发展虽然早在1962年就有人提出制造垂直腔二极管激光器的建议,但直到1977年才由日本东京工业大学的Kenichi Iga教授为首的研究小组首次提出制造垂直腔面发射激光器(VCSEL)的设想。当时他们的想法主要是通过采用缩短腔长的办法来获得稳定的动态单纵模工作的半导体激光器,以提高光通信的能力。但由于这种激光器的单程增益长度极短,激射条件十分苛刻,因此该研究工作长期停滞不前,直到1979年Iga小组才率先发明了世界上第一支垂直腔面发射激光器。这个时期的VCSEL采用的是液相外延(LPE)技术,以InGaAsP/InP为材料在77K°下的脉… 相似文献
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对隧道再生多有源区内腔接触式垂直腔面发射激光器(VCSEL)材料特性进行了实验研究,得到了VCSEL外延片量子阱增益谱峰值波长、谐振腔谐振波长、DBR反射谱中心波长及材料的生长厚度偏差等重要信息。如果谐振腔谐振波长比增益谱峰值波长长20nm以上,阈值条件很难得到满足,器件很难实现激射。符合模拟参数生长的双有源区隧道再生VCSEL实现了室温激射。氧化孔径8.3μm器件,在11mA注入电流下,获得5mW的输出功率,斜率效率0.702mW/mA,激射波长970nm。 相似文献
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1 引言 半导体激光器主要有边发射和垂直腔面发射(VCSEL)2种形式.边发射的半导体激光器发出的光是多模激光,法布里一铂罗腔长度达数十微米,发出的光束发散角大,为不对称的椭圆光束;垂直腔面发射激光器(VCSEL)的谐振腔长度只有几个波长,可以发出单模激光,发散角小,光束圆形对称,其光束质量远高于边发射激光器. 相似文献
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研究了外部光反馈对980nm垂直腔面发射激光器(VCSEL)振荡特性的影响.计算了垂直腔面发射激光器及边发射半导体激光器的光反馈灵敏因子.基于复合腔理论,分析了外部光反馈对垂直腔面发射激光器的阈值电流及微分量子效率等振荡特性参数的影响.实验结果表明,当反馈率为10%时,垂直腔面发射激光器的阈值电流由0.63A下降至0.59A,同时斜率效率和输出功率也有所下降.实验结果和理论分析符合得较好. 相似文献
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A highly efficient Vertical Cavity Surface Emitting Laser (VCSEL) has been designed and fabricated for operation at a wavelength of 1.546 μm. The device design incorporates optimized Bragg mirrors with minimized number of periods. The present structure employs quaternary III-V semiconductor alloys with GaInAsP as the active layer and AlGaInAs/InP multilayer stack as the Distributed Bragg Reflector (DBR). The material parameters of the quaternary alloys including index of refraction and bandgap energy are calculated over the entire composition range. The difference in the indices of refraction between AlGaInAs and InP alternating layers is found to be 0.46 resulting in a significant reduction of the number of DBR layers. The MBE technique is employed for the epitaxial VCSEL structure growth and the selective oxidation of AlInAsP single layer is used to form the current confinement aperture. The VCSEL gain performance has been calculated and measured, resulting in the experimental threshold current of about 3 mA and the output power of 1 mW 相似文献
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高功率基横模垂直腔面发射激光器(VCSEL)在光通信、传感、原子频标和光电混合集成等领域有着重要的应用,将光子晶体结构引入到VCSEL中,通过设计结构尺寸和分布,可以有效控制VCSEL的横向模式。课题组将正方形排列的光子晶体结构引入到VCSEL中,实现对VCSEL的横向模式和基横模出光功率控制,获得高基横模出光功率器件。通过采用平面波展开法(PWE)和全矢量三维时域有限差分方法(FDTD)对正方晶格结构光子晶体的合理设计,获得正方形排布光子晶体周期、占空比和刻蚀深度等重要参数。成功地制备出基横模出光功率大于3 mW,边模抑制比大于40 dB的正方晶格光子晶体VCSEL。 相似文献
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针对芯片原子钟(铯)用激光光源系统对垂直腔面发射激光器(VCSEL)模式及工作温度的需求,研制出可以高温工作的氧化限制型基横模 894.6 nm VCSEL。通过缩小VCSEL氧化孔直径至3 μm,限制VCSEL高阶横模激射,保证器件基横模低阈值电流工作。通过常温下腔模与材料增益失谐12 nm 的结构设计,使器件能够在50~65 ℃ 高温时,激射波长对准原子能级且工作模式稳定。实验所制备的VCSEL在工作温度为55 ℃、注入电流1.8 mA 时,激射波长达到 894.6 nm,边模抑制比(SMSR)大于35 dB,基横模功率为0.75 mW,具有11.4°的远场发射角。当温度为65 ℃时,器件SMSR大于25 dB,基横模功率大于0.1 mW。该高温基横模工作的VCSEL在芯片原子钟中具有重要的应用前景。 相似文献
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针对铷原予能级跃迁对光谱的特殊需求,设计并制备了795 nm单模垂直腔面发射激光器(VCSEL).根据对VCSEL的光场和模式的分析和计算结果,设计了单模VCSEL芯片结构.采用MOCVD技术生长了外延结构,制备了不同有源区直径的氧化限制型VCSEL芯片并进行了测试.当有源区直径从6 μm减小到3μm时,VCSEL芯片的边模抑制比(SMSR)由8.76 dB增加到34.05 dB,阈值电流由0.77 mA减小到0.35 mA.有源区直径为6,5,4和3μm的VCSEL芯片的输出功率分别为0.37,0.46,0.58和0.44 mW,有源区直径为4μm的VCSEL芯片的远场为圆形光束,发散角为15°.85℃时3.5 μm有源区直径的VCSEL芯片输出功率为0.125 mW,激射波长为795.3 nm.室温3 dB带宽大于8 GHz,满足了铷原子传感器对VCSEL单模光谱、输出功率及调制速率的要求. 相似文献
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G.G. Ortiz S.Q. Luong S.Z. Sun J. Cheng H.Q. Hou G.A. Vawter B.E. Hammons 《Photonics Technology Letters, IEEE》1997,9(8):1069-1071
Monolithic, multiple-wavelength vertical-cavity surface-emitting laser (VCSEL) arrays have been obtained by the surface-controlled enhancement and reduction of the MOCVD epitaxial growth rate, achieving a periodic, graded wavelength span greater than 30 nm. Room-temperature (RT), electrically pumped continuous-wave (CW) lasing is demonstrated, with uniform threshold currents of 5.5/spl plusmn/0.5 mA with typical output powers of 0.5 mW. We show here for the first time both the enhancement and the reduction of the growth rate of the entire VCSEL structure and demonstrate the controlled variation of the VCSEL lasing wavelength over a widened spectral range by exploiting both effects. 相似文献
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Schneider R.P. Jr. Choquette K.D. Lott J.A. Lear K.L. Figiel J.J. Malloy K.J. 《Photonics Technology Letters, IEEE》1994,6(3):313-316
Significant improvement in the performance of AlGaInP/AlGaAs visible vertical-cavity surface-emitting laser diodes has been achieved in gain-guided planar-geometry devices utilizing proton implants to define the current injection path. Threshold currents as low as 1.25 mA were measured on 10 μm-diameter devices, with maximum power output of 0.33 mW from larger devices. Continuous-wave (cw) lasing was achieved at temperatures as high as 45°C. The improved diode performance is attributed to better lateral heat-sinking and reduced parasitic heat generation afforded by the planar device structure, relative to previously-reported air-post structures. This work represents the first realization of efficient room-temperature operation of AlGaInP-based visible VCSEL diodes 相似文献
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High-power single-mode antiresonant reflecting optical waveguide-type vertical-cavity surface-emitting lasers 总被引:2,自引:0,他引:2
Antiresonant reflecting optical waveguide (ARROW) techniques are employed in vertical cavity surface emitting lasers (VCSELs) to achieve high-power single-mode emission. Using the effective-index method and fiber mode approximation, the cold-cavity lateral modal behavior for the circular shaped ARROW VCSEL demonstrates significant reduction of radiation loss from that of a single antiguide, while maintaining strong discrimination against high-order modes. The circular-waveguide is created by selective chemical etching and two-step metal-organic chemical vapor deposition growth, with proton implantation used to confine the current injection to the low-index core region. A single-mode CW power of 7.1 mW has been achieved from an 8 /spl mu/m diameter ARROW device (index step /spl Delta/n = 0.05, emission at /spl lambda//sub 0/ = 980 nm) with a far-field FWHM of 10/spl deg/. Larger aperture (12 /spl mu/m) devices exhibit multimode operation at lower drive currents with a maximum single-mode continuous-wave output power of 4.3 mW. 相似文献
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OC-48 capable InGaAsN vertical cavity lasers 总被引:1,自引:0,他引:1
Jackson A.W. Naone R.L. Dalberth M.J. Smith J.M. Malone K.J. Kisker D.W. Klem J.F. Choquette K.D. Serkland D.K. Geib K.M. 《Electronics letters》2001,37(6):355-356
A selectively oxidised InGaAsN/GaAs three quantum well vertical cavity laser (VCSEL) demonstrated continuous wave (CW) lasing with a single-mode output power of 0.749 mW at 1266 nm. This is the first reported InGaAsN VCSEL capable of meeting the power and wavelength requirements for both OC-48 SR and OC-48 IR-1 compliant links. The VCSEL uses two low absorption n-type GaAs/AlGaAs distributed Brag reflectors and a tunnel junction to achieve current injection into the active region. A multimode version of the VCSEL had a output power of 1.43 mW at 1.26 μm. CW lasing continued up to temperatures as high as 107°C. The VCSEL material was grown by solid source molecular beam epitaxy with an RF nitrogen plasma source 相似文献