泵浦带有弛豫振荡的固体激光器的弛豫振荡特性理论研究

对泵浦带有弛豫振荡的固体激光器的弛豫振荡特性进行了系统的理论研究，发现实际光子数的起伏同时具有自身固有的弛豫振荡频率和泵浦光的弛豫振荡频率两种分量．当两者的频率相近时，会呈现出共振加强现象．特别是当两个弛豫振荡的衰减率也相等的时候，共振现象极为强烈．PD反馈能够有效地抑制弛豫振荡．     

光纤激光器弛豫振荡特性研究

根据光纤激光器瞬态的速率方程,对F-P腔光纤激光器的瞬态输出特性进行了理论分析.采用数值计算方法对不同长度、不同腔面反射率、不同抽运功率下光纤激光器输出的弛豫振荡特性进行了模拟分析.结果表明弛豫振荡频率随光纤长度增加而减小,但是随抽运功率的变化很小.弛豫振荡幅度随抽运功率上升而增加,振荡的衰减时间随激光器腔镜的反射率的增加而上升,但是不随抽运功率变化.进行了975 nm抽运的Er/Yb共掺双包层光纤激光器的实验,实验表明理论分析得到的基本特性是合理的.     

波长1.05微米和1.32微米的连续La_(0.1)Nd_(0.9)P_5O_(14)激光器

采用Ar~+离子激光器作为泵浦源实现了NdPP晶体的1.051微米和1.32微米的室温连续运转;采用准半共心腔获得低阈值运转.最低阈值吸收功率1毫瓦,最大输出功率达2毫瓦.由激光特性研究得到的受激发射截面σ_(1.051μ)=1.1×10~(19)厘米~2,σ_(1.32μ)=2.2×10~(-20)厘米~2.还研究了激光弛豫振荡现象,给出弛豫振荡频率与泵浦功率超阈值比的关系曲线;计算了不同输出功率时阈值泵浦功率密度与晶体长度的关系曲线.     

掺钕单模光纤激光器的调Q实验研究

采用连续运转Ar+激光器5145 Å输出波长光作为泵浦源,采取端泵浦的平凹光学谐振腔结构,用光学斩波器作为Q开关,建立了掺钕单模光纤激光器的调Q实验装置,对这种激光器的调Q特性进行了实验研究和讨论。     

Cavity resonance shift and bandwidth enhancement in semiconductor lasers with strong light injection

We theoretically investigated the physical mechanism of significant bandwidth enhancement in injection-locked semiconductor lasers with strong light injection. Strong light injection can increase the semiconductor laser bandwidth to several times the free-running relaxation oscillation bandwidth. We focused on the fact that an injection-locked semiconductor laser can operate at an optical frequency different from its cavity resonance condition. Resonance is shifted from solitary resonance through the carrier-induced refractive-index change due to strong optical injection. We then framed a theory in which the enhanced resonance can be generated by transient interference between the injection-locked field and the field corresponding to the shifted cavity resonance. To examine the theory, we numerically investigated the rate equations and found that the numerical and theoretical results agree well over a wide range for strong injection. A stability analysis for the rate equations revealed that there is a mode transition from relaxation oscillation to interference-induced oscillation with increased injection, and the relaxation oscillation can become suppressed for higher injection levels. We believed that negligibly small fluctuations of the carrier suppressed the relaxation oscillation and examined it numerically. We also predict that, at strong injection levels, semiconductor lasers can be lower-dimensional systems because of the possibility of adiabatic elimination of the carrier. We further conclude that such low-dimensional systems can generate a high-frequency interference beat in the laser cavity and the resultant enhanced resonance.     

Small-signal analysis of semiconductor lasers modulated atfrequencies on the order of the beat frequency

A small-signal analysis of direct modulation of laser diodes is presented. The analysis is valid over a wide frequency range, up to the frequency corresponding to the round trip time of the active region. This theory is best for laser diodes with small active regions but with large and complicated optical cavities. Optical resonances may occur in this range, resulting in a large response to direct modulation as a result of interaction of the lasing mode with the optical resonance. This theory can predict the linear response of the laser to direct modulation throughout this frequency range. It also predicts the lower frequency relaxation oscillation effect, thus unifying these different effects with a single treatment. The form of the modulation response is found to be the same as the standard relaxation oscillation formula, modified by a factor the form of which depends on the optics of the laser cavity alone     

Stability of an intracavity frequency-doubled Nd:YAG laser

Single-mode rate equations are solved in the small-signal limit to determine the oscillation frequency and decay constant for relaxation oscillations in an intracavity frequency-doubled Nd:YAG laser. It is found that improved stability is noted for nonlinear coupling constants greater than 10^-5. Eventually, cavity perturbations become critically damped with increased coupling, and oscillatory behavior disappears.     

激光脉冲驱动下双腔耦合系统的动力学特性

在外加激光控制下,研究了含有两能级量子比特的双腔耦合系统的动力学行为.基于系统的相互作用哈密顿量,得出了系统量子态激发概率的解析解.通过数值模拟讨论了3种特定情况下系统的动力学特性:外加脉冲与腔场发生近共振、比特与腔模大失谐条件下,腔模的最大激发概率小于0.07,腔模处于非激发状态,比特的激发概率出现瞬时衰减;比特与腔模强耦合条件下,腔模的激发概率近似0.5,腔模处于半激发状态,比特的激发概率出现高频振荡;腔场之间大跳跃条件下,腔模的最大激发概率小于0.07,腔模处于非激发状态,比特的激发概率出现高频振荡.     

LD抽运的双频固体激光器的光谱和频差特性研究

研究了LD抽运的、频差可调的双频Nd:YVO4微片激光器的光谱特性。对于荧光谱宽固定的激光增益介质,输出激光的光谱特性主要与抽运功率、抽运位置和谐振腔长等参数相关;通过控制相关参数,可以调整输出激光不同波长频谱峰之间的相对频差。实验结果表明,当LD抽运电流为14.5A时,抽运光与谐振腔模达到良好的匹配,输出稳定的双纵模双频激光,相应的频差可超过90GHz;改变抽运参数相应频差在92.22~94.24GHz之间变化;增加谐振腔的腔长时,输出的激光纵模间隔减少并可输出三纵模,其中两频峰之间的最小频差可达到26.50GHz。     

Optimization of vertical cavity lasers with intracavity metal layers

The dependence of the decay of optical eigenmodes in a vertical cavity laser with intracavity metal layers on the geometric parameters of the system is investigated. It is shown that the lowest decay rate corresponds to the case where the frequency of the cavity eigenmode differs from the Bragg frequency of the cavity mirrors. The spontaneous-emission rate is calculated using the S-quantization formalism. It is found that, for the odd-parity high-energy mode, this rate increases by two orders of magnitude with respect to the freespace emission rate.     

Chaos in semiconductor lasers with optical feedback: theory andexperiment

The authors present a detailed theoretical and experimental investigation of the nonlinear dynamics of a semiconductor laser with optical feedback. The results show that the coherence collapsed state is a chaotic attractor and that chaos is reached for increasing feedback level through a quasi-periodic route interrupted by frequency locking. Furthermore, the coexistence of two attractors, associated with the same external cavity mode, but having different relaxation oscillation frequencies, is demonstrated and explained     

Switching a multistable solid-state laser from one stable steady state to another-dynamic stability analysis

The switching of a multistable laser from one stable steady state to the next has been studied using a longitudinally pumped laser with a nonlinear mirror. To achieve switching, use has been made of a second mode that is oscillating at the pump frequency. This pump mode is kept just below its threshold for oscillation. We find through an analysis of the dynamic gain functions of both the laser and pump modes that the steady state of the laser mode is very sensitive to changes in the steady state of the pump mode that are brought about by fluctuations in the pump intensity. It is found that for switching to be possible, the difference in frequency between the pump and laser mode should not be much larger than the linewidth of the laser atomic medium. We conclude that a conventionally pumped multistable and multimode solid-state laser can have one of its modes switched from one of its stable steady states to another such state, of a lower or higher intensity, by longitudinally injecting a pulse of suitable magnitude, frequency, and duration as a perturbation. This can happen provided that one of the other N-1 modes, which are kept below oscillation threshold, has been pushed by such a perturbation to just above threshold for oscillation in order that it couples with the oscillating laser mode. We have estimated the switching time to be less than the laser cavity photon decay time but of the order of the round-trip time in the Fabry-Perot cavity. The analysis also shows that the laser threshold intensity and its stability are not dependent on the difference between the frequencies of the pump and laser modes. However, the threshold is found to be sensitive to changes in the overlap parameter which is defined as a ratio of the beam waists.     

Frequency noise reduction of visible InGaAlP laser diodes bydifferent optical feedback methods

The emission spectra of several commercial InGaAlP laser diodes operating in the visible range were investigated. Strong relaxation sidebands at frequency spacings up to 2 GHz were observed in the field spectra. By using optical feedback from an external high-finesse resonator, the laser line-width was reduced from a few hundred megahertz to less than one megahertz. However, only a small part of the laser power was found within the narrow bandwidth, whereas most of the power finds itself in relaxation sidebands a few gigahertz apart from the carrier. The frequency noise reduction was investigated by using an external cavity configuration. With a short cavity length the relaxation oscillation sidebands were completely suppressed, and the laser linewidth was reduced to a few megahertz. Additional strong reduction in the laser linewidth to roughly 50 kHz was obtained using a combination of the external cavity laser with optical feedback from an external high-finesse resonator     

Direct Modulation Characteristics of Composite Resonator Vertical-Cavity Lasers

We report the small-signal modulation characteristics of a monolithic dual resonator vertical cavity surface emitting laser. The modulation response is described by a system of rate equations with two independent carrier populations and a single longitudinal optical mode. The independent optical overlaps and differential gains of the two active regions can each be adjusted to maximize the output response. We show that under certain conditions, the composite resonator may achieve a higher bandwidth than a single cavity laser with the same photon density. We find the relaxation oscillation frequency to depend mainly on the total photon density and not the individual currents in the two cavities. With appropriate current injection, the composite resonator laser achieves a maximum -3-dB bandwidth of 12.5 GHz and a maximum modulation current efficiency factor of approximately 5GHz/ma^1/2      

The effect of optical feedback on the relaxation oscillation insemiconductor lasers

The influence of weak optical feedback on the relaxation oscillation in semiconductor lasers is studied both theoretically and experimentally. In the approximation used the frequency branches of the relaxation oscillation are described by multiples of the fundamental frequency of the external cavity. However, especially for the low multiples, the deviation from this behavior is quite pronounced. The authors discuss the dependence of the frequency and the damping rate on the length of the external cavity in detail. Furthermore, they find that the damping rates that correspond to the various frequency branches are quite different. The accessibility of the various frequency branches is determined by the damping rates that belong to them     

Effects of high density pumping on relaxation oscillations and mode spectra in lasers

Effects of high density pumping on relaxation oscillations and mode spectra are investigated in LiNdP4O12(LNP) lasers. It is shown that high density pumping reduces the spatial population inhomogenuity, which is due to periodic inversion saturation by a first lasing mode in the crystal, and results in spontaneous single longitudinal mode oscillations even at high excitation rates. Physical interpretations are given for single-mode operations on the basis of Auger recombination (annihilation) process for 1.048 and 1.32 μm quantums in LNP lasers. An effective diffusion parameter of excited states is shown in an increase with absorbed pump power density through the Auger process. Observed relaxation oscillation waveforms, which disagreed with the traditional laser dynamic theory, are found to be explained well by the rate equations, including the effective diffusion constant.     

Locking characteristics of a side-mode injected semiconductor laser

This paper is focused on an experimental study of the injection-locking bandwidth and the relaxation oscillation frequency in a side-mode injection-locked semiconductor laser. It is shown that, for such a laser, the injection-locking bandwidth and the relaxation oscillation frequency are related to the injection power and the wavelength of the target injection mode. At fixed launched injection power, the injection-locking bandwidth and relaxation oscillation frequency can be increased when the injection wavelength is detuned to the short-wavelength side of the free-running wavelength, while the relaxation oscillation frequency decreases when the injection wavelength is set to the long-wavelength side of the free-running wavelength. The results are in good agreement with theoretical predictions     

光纤激光器时域瞬态特性的理论与实验研究

对掺铒光纤激光器的时域瞬态特性进行了理论与实验研究.理论模型从激光器的基本速率方程出发,通过求解增益光纤中的功率传输方程,得到激光器的时域输出结果.数值模拟了脉冲泵浦注入后激光器的瞬态特性,分析了激光器时域输出特性随泵浦功率及腔内损耗的变化规律.实验中采用上下沿功率均可调的方波泵浦掺铒光纤,通过可变光衰减器调解腔内损耗,观察激光器驰豫振荡特性,研究了激光建立的延迟时间与泵浦功率及腔损耗的关系.数值模拟与实验结果一致.     

脉冲LD泵浦千赫兹1.57 μm全固态激光器

采用非稳腔光参量振荡（OPO）研制了千赫兹重复频率人眼安全波段全固态激光器。激光器采用电光调Q方式、脉冲激光二极管（LD）侧面泵浦Nd:YAG激光晶体实现了高光束质量的1.064m基频激光。光参量振荡部分采用Ⅱ类非临界相位匹配KTP晶体,为了获得较好的光束质量,OPO谐振腔采用平凸非稳定谐振腔结构,实现了千赫兹重频、窄脉冲1.57m波段激光输出。在脉冲激光二极管泵浦电流为125 A、电光调Q重复频率为1 kHz时,1.57m激光输出最大平均功率达到了4.67 W,激光脉冲宽度为4.3 ns,功率不稳定度为3%,激光泵浦阈值约为45 A。     

Nonlinear dynamics of semiconductor laser emission under variablefeedback conditions

A study was made of the behavior of external cavity semiconductor lasers with tilted external cavity mirrors providing variable feedback. The appearance of intermittent breakdowns of the light intensity induced by the tilting of the external mirror is demonstrated. The rate of the breakdowns of the light intensity is directly related to the relaxation oscillation frequency of the external cavity semiconductor laser. The authors describe the experimental observations theoretically by the coupled rate equations for the electric field density and the carrier density