周边集成AMLCD的信号失真和缓冲寄存器TFT尺寸计算

建立了有源矩阵液晶显示器中周边驱动缓冲寄存器的等效电路模型。利用 Ｔ Ｆ Ｔ 的线性近似和 Ｅｌｍ ｏｒｅ 模型, 计算了周边驱动电路中的信号失真, 讨论了栅延迟与金属栅电极材料的关系及对 Ｔ Ｆ Ｔ 开态电阻的要求。     

周边集成AMLCD的信号失真的和缓冲寄存器TFT尺寸计算

建立了有源矩阵液晶显示器中周边驱动缓冲寄存器的等效电路模型。利用ＴＦＴ的线性近似和Ｅｍｏｒｅ模型，计算了周边驱动电路中的信号失真，讨论了栅延迟与栅电极材料的叛乱级对ＴＦＴ开态电阻的要求。     

TFT AMLCD像素矩阵电路中栅延迟的模拟研究

建立了ａ－ＳｉＴＦＴＡＭＬＣＤ的等效电路模型,综合考虑栅信号线电阻、栅与源信号线的交叠电容以及ＴＦＴ导电沟道电容构成的ＲＣ（ＲｅｓｉｓｔｉｖｉｔｙＣａｐａｃｉｔａｎｃｅ）常数,模拟计算了栅信号延迟对液晶显示屏尺寸、显示分辨率及栅信号电极材料的依赖关系,为实现器件优化设计提供参考。     

基于信号失真的收费广场容量计算

为了降低收费广场占地面积,我们通过信号失真的角度来看待车辆汇流的情况,并且结合排队论,计算出收费广场的容量,从而得到收费广场占地最小面积。本项理论研究巧妙地将信号失真的概念结合排队论运用到车辆汇流中,可为收费广场容量的研究提供有益参考。     

a-Si TFT LCD过孔尺寸的缩减

为了提高薄膜晶体管液晶显示器的开口率,研究了在优化的钝化层沉积条件下的过孔尺寸.结果表明,随着钝化层沉积温度的升高,钝化层的刻蚀率在下降,过孔的尺寸变小.当钝化层沉积温度在360℃时,过孔尺寸为8.20 μm.     

关于调幅信号的失真

广播电视信号技术质量指标里,最主要的是噪声（包括干扰）和失真。早期,这两个问题同样重要,但随着数字化．失真问题似乎被逐步淡出。因为信号一旦数字化,传统概念上．由元件非线性引起的失真就不存在了;人们关心的是码间的串扰,噪声造成的误码率增加等等：但实际上失真问题依然是存在的。失真一般分两大类,即线性失真和非线性失真。前者是指在线性系统里,由于传输特性（频率特性、相位特性）不理想而导致原有频率成分的比例改变。它的后果就是高音或低音不足、图像清晰度降低、某段声音太强、图像镶边甚至重影等等现象。     

半导体器件集成密度和尺寸减小的物理极限

在研究亚微米尺寸几何结构的超大规模集成(VLSI)时,原来得到公认的许多器件和集成电路工艺规则正在突破。有些制备方法已经具备了100埃级的器件几何的制备能力,可是,物理极限的卷入,使常规的器件和系统的规则无法简单地从大尺寸一下子按比例缩小到分子级。     

TFT—LCD的基本结构和TFT制造技术

ＴＦＴ—ＬＣＤ的基本结构和ＴＦＴ制造技术１引言随着信息社会的高度发展，用于人─—机联系的显示越来越重要了。由于计算机趋向于小型化，因此，与计算机连接的显示器件也要求体积小、重量轻、耗电少。从根本上来说，就是要以新的显示器件来取代持续４０多年唱主角的Ｃ...     

一种TFT源漏极沟道尺寸的自动测量方法

为了实现对图像中TFT源漏极的快速定位和沟道尺寸的自动测量,采用基于图像特征点的图像识别方法。在识别过程中先采用图像处理的方法对图像进行优化,再采用多边形拟合的方法确定目标的边缘,并通过改进的角点检测方法对物体形状进行更精确的定位,从而实现了对TFT源漏极沟道尺寸的精确测量。经过实验验证,精度可达到0.02像素。     

Process-independent analogue data driver for polysilicon TFT AMLCD

Polycrystalline silicon (poly-Si) thin film transistor (TFT) technology is very suitable for driving an active matrix LCD (AMLCD) panel as the driver circuit, and the panel can be integrated on the same substrate. This allows the entire display system to be thin and makes the concepts of ‘TV on wall’ and ‘sheet computer’ possible. However, the large variation of threshold voltage of poly-Si TFT across the wafer makes it difficult to obtain analogue amplifiers with constant gain and phase margin. In this paper, an analogue data driver for the poly-Si TFT AMLCD is proposed. An operational amplifier with a gate bias-voltage generation circuit for this analogue data driver, with characteristics independent of variations in threshold voltage, will be presented. In Hspice simulation, with threshold voltage varying from 2.5?V to 4.5?V, gain variations of the proposed amplifier were reduced from ±10?dB to ±0.2?dB and phase margin variations were reduced from 10° to 0.37° compared with typical operational amplifier design. This enables the analogue data driver for AMLCD to be implemented in poly-Si TFT technology.     

High-performance hydrogenated amorphous-Si TFT for AMLCD and AMOLED applications

A novel technology for manufacturing high-performance hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) is developed in this letter. In the bottom gate light-shield a-Si:H TFT structure, the side edge of a-Si:H island is capped with extra deposition of heavily phosphorous-doped a-Si layer. Such an ingenuity can effectively eliminate the leakage path between the parasitic contacts of source/drain metal and the sidewall of a-Si:H island edge. In addition, electrical performance of the novel a-Si:H TFT device exhibits superior effective carrier mobility as high as 1.05 cm/sup 2//Vs, due to the enormous improvement in parasitic resistance. The impressively high performance of the proposed a-Si:H TFT provides the potential to apply foractive matrix liquid crystal display and active matrix organic light-emitting diode technology.     

多晶硅TFT及其在AMLCD中的应用

多晶硅薄膜晶体管目前是大面积微电子学领域中最热门的研究课题之一,它以其独特的优点,在液晶显示领域中失常着重要角色,简要介绍了多晶硅薄膜晶体管的结构、器件特性以及在有源矩阵液晶显示器中的应用。     

A poly-Si TFT integrated gate-data line-crossover structureemploying an air-gap for large-size AMLCD panel

We have fabricated a novel poly-Si TFT integrated at the gate-data line-crossover structure without sacrificing the electrical characteristics. The aperture ratio of the panel was increased considerably because the TFT was located under the opaque metal line. In particular, we employed a low dielectric air-gap between the gate line and data lines, which reduced capacitance between the gate and data lines, enabling the signal delay of the data line to be significantly decreased. The fabricated TFT was successfully operated, and the proposed structure found to reduce the delay time by a factor of nine compared with conventionally constructed panel without air-bridges     

Buffer Sizing of a Packet-Voice Receiver

Some analytical results have been developed for the analysis and design of a packet-voice receiver in previous work [1], namely, the delay suffered by packets because of the reassembly mechanism is described in terms of the overall delay probability density function (pdf)w(t). This basic analytical result is used here in order to obtain the pdfb(t)of the time spent by packets in the receiver buffer. In this way, the previous work [1] is extended to analysis of the delay distribution of the receiver buffer where arriving talkspurts are delayed to compensate for the variable network delay of all packets within a talkspurt. The tools developed here facilitate a choice of the buffer size at the prescribed level of packet-loss probability.     

数字制IDR的定时和缓冲

本文采用定性与定量相结合的方法,分析了多普勒效应和准同步时钟精确度对IDR链路的影响,较全面综述了卫星通信设备中P/D缓冲器作用、位置安排类型和缓冲量大小的设定,为便于理解,给出了"典型P/D缓冲器的性能图".     

Buffer Sizing for TCP Flows in 802.11e WLANs

We consider the task of sizing buffers for TCP flows in 802.11e WLANs. A number of fundamental new issues arise compared to wired networks. These include that the mean service rate is dependent on the level of channel contention and packet inter-service times vary stochastically due to the random nature of CSMA/CA operation. We find that these considerations lead naturally to a requirement for adaptation of buffer sizes in response to changing network conditions.     

一种TFT LCD数字源驱动芯片的设计

分析了多晶硅薄膜晶体管(poly-Si TFT)有源矩阵驱动的结构和源驱动器的驱动原理及基本构成,并针对分辨率为800×600的64级灰度的VGA显示屏,采用分块矩阵的方法使数据转换频率降低到原来的1/10,在此基础上对传统的源驱动电路进行了改进,使DAC电路的数目大大减少,从而减小芯片面积,降低整个芯片的功耗。对电路采用Cadence进行仿真,给出了逻辑部分工作时序波形。