共查询到20条相似文献,搜索用时 93 毫秒
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研制HgCdTe焦平面器件是当前实现长波红外焦平面器件的主要途径。红外焦平面器件要求大面积、均匀性好和高质量的HgCdTe材料。用LPE、MOCVD和MBE外延生长的HgCdTe薄膜材料可满足焦平面器件对材料的要求。LPE是目前研制HgCdTe光伏列阵主要材料,用双层掺杂生长的p-n异质结得到当前最高的R_0A值。MOCVD和MBE生长的HgCdTe外延膜近期有了较大的进展,除了在硅衬底上MBE生长HgCdTe仍在研究之外,其它已趋向成熟并开始转向工业生产。为了研制高质量的HgCdTe外延膜,高质量的衬底材料与建立薄膜均匀性的检测工艺是十分必要的。 相似文献
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金属有机化合物汽相外延碲镉汞薄膜的进展 总被引:3,自引:0,他引:3
回顾了金属有机化合物汽相外延碲镉汞薄膜的发展历程,简要叙述了MOVPEHgCdTe薄膜的三种主要技术,与HgCdTe晶格匹配和失配的衬底材料,各种金属有机物源和掺杂研究的新近进展。还介绍了MOVPE-HgCdTe薄膜和探测器目前达到的水平。大量结果已经表明,MOVPE生长的HgCdTe薄膜的质量适合于制造高质量的光伏型探测器,MOVPE是一种原位生长先进的HgCdTe红外焦平面列阵既实用又富生命力 相似文献
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从理论上完成对MOCVD工艺生长的HgCdTe/CdTe/GaAs材料的透过率、吸收边和相干行为的计算.结果表明光的干涉条纹与外延层HgCdTe和缓冲层CdTe的总厚度相关,其透过率不能直接反映材料的内在质量.计算结果还表明,外延材料组份的均匀性对红外光谱的吸收边有很大的影响.运用理论计算对实验中测得的光谱曲线进行了分析,发现MOCVD工艺存在着一种部分过饱和态的生长机制,并发现负禁带HgTe薄膜也具有一定的透光特性. 相似文献
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MOCVD—Hg1—xCdxTe/CdTe/GaAs外延材料红外吸收光谱研究 总被引:1,自引:0,他引:1
从理论上完成对MOCVD工艺生长的HgCdTE/CdTe/GaAs材料的透过率、吸收边和相干行为的计算。结果表明光的干涉条纹与外延层HgCdTe和缓冲层CdTe的总厚度相关,其透过率不能直接反映材料的内在质量。计算结果还表明,外延材料组份的均匀性对红外光谱的吸收边有很大的影响。运用理论计算对实验中测得的光谱曲线进行了分析,发现MOCVD工艺存在着一种部分过饱和态的生长机制,并发现负禁带HgTe薄膜 相似文献
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引晶技术在HgCdTe体单晶生长中的应用郎维和(华北光电技术研究所北京100015)HgCdTe是一种三元化合物,根据其化学配比可以在一定范围内制备各种禁带宽度的半导体光电材料。为了满足多元红外探测器的要求,我们进行引入籽晶技术生长HgCdTe晶体,... 相似文献
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双色红外探测器的现状与发展 总被引:2,自引:1,他引:1
双色红外探测器是红外探测器发展的方向之一,现已有多种双色红外探测器投入使用。本文简要综述了国内外研制双色红外探测器的技术途径、现状和发展方向,从探测器材料看,多数采用HgCdTe或HgCdTe+InSb。从探测器光敏元的排列方式看,多数采用并列和上下重叠结构。从探测器的工作原理看,多数以光导和光伏模式工作。今后,双色红外探测器将继续向集成化、焦平面、大列阵、小型化和多色化等方向发展并获得更为广泛的 相似文献
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测量了3个HgCdTe光导器件和一块液相外延生长HgCdTe薄膜材料的磁阻.用两种载流子模型的约化电导张量(RCT)过程对实验数据进行了分析,拟合结果与实验值符合得很好. 相似文献
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简要叙述了小孔流量法测量HgCdTe红外探测器放气量实验原理和实验装置。给出了HgCdTe红外探测器从上排气台起至剪管,排气周期14天内的放气量。简述了杜瓦瓶排气周期和真空寿命的关系。 相似文献
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High-quality large-area MBE HgCdTe/Si 总被引:2,自引:0,他引:2
J. M. Peterson J. A. Franklin M. Reddy S. M. Johnson E. Smith W. A. Radford I. Kasai 《Journal of Electronic Materials》2006,35(6):1283-1286
HgCdTe offers significant advantages over other similar semiconductors, which has made it the most widely utilized variable-gap
material in infrared (IR) focal plane array (FPA) technology. HgCdTe hybrid FPAs consisting of two-dimensional detector arrays
that are hybridized to Si readout circuits (ROIC) are the dominant technology for second-generation infrared systems. However,
one of the main limitations of the HgCdTe materials system has been the size of lattice-matched bulk CdZnTe substrates, used
for epitaxially grown HgCdTe, which have been limited to 30 cm2 in production. This size limitation does not adequately support the increasing demand for larger FPA formats which now require
sizes up to 2048×2048, and only a single die can be printed per wafer. Heteroepitaxial Si-based substrates offer a cost-effective
technology that can be scaled to large wafer sizes and further offer a thermal-expansion-matched hybrid structure that is
suitable for large format FPAs. This paper presents data on molecular-beam epitaxy (MBE)-grown HgCdTe/Si wafers with much
improved materials characteristics than previously reported. We will present data on 4- and 6-in diameter HgCdTe both with
extremely uniform composition and extremely low defects. Large-diameter HgCdTe/Si with nearly perfect compositional uniformity
and ultra low defect density is essential for meeting the demanding specifications of large format FPAs. 相似文献
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F. Aqariden J. Elsworth J. Zhao C.H. Grein S. Sivananthan 《Journal of Electronic Materials》2012,41(10):2700-2706
Molecular beam epitaxy (MBE) growth of HgCdTe offers the possibility of fabricating multilayer device structures with an almost unlimited choice of infrared sensor designs for focal-plane array (FPA) fabrication. HgCdTe offers two major advantages that explain its dominance in the infrared photon detector marketplace. The thermal generation rate per unit volume of the material is lower and the quantum efficiency for photon absorption in the infrared is higher in HgCdTe than in any competing material—it yields devices with quantum efficiencies as high as 0.99. Recently, EPIR Technologies and DRS Infrared Technologies agreed to collaborate and examine: (i) the feasibility of employing MBE HgCdTe in the fabrication of high-density vertically interconnected photodiodes (HDVIPs), which are usually fabricated with liquid-phase epitaxy material, and (ii) the potential benefits of horizontal integration, with EPIR supplying the MBE materials to DRS for device and array fabrication. The team designed and developed passivation–absorber–passivation structures that are heavily used by DRS. This paper provides an overview of the characteristics of HDVIP devices and arrays fabricated from MBE HgCdTe and the anticipated advantages of horizontal integration in the industry. Material growth, device fabrication, and test results are presented. 相似文献
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单光子计数技术在弱信号探测和时间测距中具有重大的应用前景。自从20世纪70年代可见光的光子计数系统研发以来,国际上该领域内的研发小组在不断地发展完善光子计数技术,充分放大光子信号,以降低电子设备的读出噪声。电子倍增电荷耦合器件(Electron Multiplying Charge Coupled Devices, EMCCDs)具有更高的量子效率,可替代传统的可见光光子计数系统,但较大的雪崩噪声阻碍了倍增下入射光子数的准确获取。碲镉汞线性雪崩器件(HgCdTe APD)的过剩噪声因子接近1,几乎无过剩噪声;相对于盖革模式的雪崩器件,没有死时间和后脉冲,不需要淬灭电路,具有超高动态范围,光谱响应范围宽且可调,探测效率和误计数率可独立优化,开辟了红外波段光子计数成像的新应用领域,在天文探测、激光雷达、自由空间通信等应用中具有重要价值。美国雷神(Raytheon)公司和DRS技术公司、法国CEA/LETI实验室和Lynred公司、英国Leonardo公司先后实现了碲镉汞线性雪崩探测器的单光子计数。文中总结了欧美国家在碲镉汞光子计数型线性雪崩探测器研究方面的技术路线和研究现状,分析了吸收倍增... 相似文献
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Direct growth of CdZnTe/Si substrates for large-area HgCdTe infrared focal plane arrays 总被引:1,自引:0,他引:1
S. M. Johnson T. J. de Lyon C. A. Cockrum W. J. Hamilton T. Tung F. I. Gesswein B. A. Baumgratz L. M. Ruzicka O. K. Wu J. A. Roth 《Journal of Electronic Materials》1995,24(5):467-473
Direct epitaxial growth of high-quality 100lCdZnTe on 3 inch diameter vicinal {100}Si substrates has been achieved using molecular
beam epitaxy (MBE); a ZnTe initial layer was used to maintain the {100} Si substrate orientation. The properties of these
substrates and associated HgCdTe layers grown by liquid phase epitaxy (LPE) and subsequently processed long wavelength infrared
(LWIR) detectors were compared directly with our related efforts using CdZnTe/ GaAs/Si substrates grown by metalorganic chemical
vapor deposition (MOCVD). The MBE-grown CdZnTe layers are highly specular and have both excellent thickness and compositional
uniformity. The x-ray full-width at half-maximum (FWHM) of the MBE-grown CdZnTe/Si increases with composition, which is a
characteristic of CdZnTe grown by vapor phase epitaxy, and is essentially equivalent to our results obtained on CdZnTe/GaAs/Si.
As we have previously observed, the x-ray FWHM of LPE-grown HgCdTe decreases, particularly for CdZnTe compositions near the
lattice matching condition to HgCdTe; so far the best value we have achieved is 54 arc-s. Using these MBE-grown substrates,
we have fabricated the first high-performance LWIR HgCdTe detectors and 256 x 256 arrays using substrates consisting of CdZnTe
grown directly on Si without the use of an intermediate GaAs buffer layer. We find first that there is no significant difference
between arrays fabricated on either CdZnTe/Si or CdZnTe/GaAs/Si and second that the results on these Si-based substrates are
comparable with results on bulk CdZnTe substrates at 78K. Further improvements in detector performance on Si-based substrates
require a decrease in the dislocation density. 相似文献