多片TS101S的加载引导设计分析及实现

详细分析了美国ADI公司TigerSHARC系列数字信号处理器ADSP—TS101S的引导方式，给出了用多卡TS101S在某雷达信号处理机系统中进行加载引导的硬件以及软件设计方案。     

TS101在雷达仿真系统中的应用

给出了TS101在基于PC机的雷达仿真系统中的应用方法。介绍了TS101的基本特性以及加速板卡的硬件结构，最后给出了各个DSP的资源分配以及DSP处理器中各种雷达信号处理算法的具体实现方法。     

基于TS101S的生命信号处理硬件设计和算法实现

生命信号作为一种微弱地低速目标信号,是一个频率极低、准周期、低信噪比、多谐波组合的信号.本文提出了利用ADI公司高性能的ADSP-TS101S处理器进行设计的数字信号处理终端模块的设计方案,同时给出功能结构框图,并简单介绍了ADSP-TS101S的功能结构和特点,以及利用两片TS101S所要完成的对生命信号的积累抽样、工频滤波、FFT分析和利用传统小波变换滤波的信号处理新算法,并给出仿真结果.     

ADSP-TS101S TigerSHARC处理器在信号处理中的应用

介绍了利用AD公司新一代高性能DSP芯片TigerSHARC TS101S构成的一个信号处理系统。文中讲述了此DSP芯片的特点，DSP芯片在信号处理系统中的应用以及电路设计。本文对于其他工程设计具有参考价值。     

ADSP-TS201S芯片的功能和应用

介绍了ADI公司的新一代高性能Tiger SHARC处理器ADSP-TS201S的结构和性能，并结合与TS101S的对比说明了TS201S在性能上的改进；给出了基于TS201S进行系统设计的基本方法及设计过程中应该特别注意的问题；最后给出了多片系统的典型设计电路图，同时说明了TS201S外围电路的配置和多片级联的方法。     

基于DSP的雷达目标检测模块设计

高性能信号处理器芯片ADSP-TS101广泛应用于复杂雷达信号处理系统的设计中.本文分析了动目标检测(MTD)和恒虚警检测(CFAR)的原理,对其性能进行了讨论,并根据实际情况做了算法改进和优化,最后在基于四TS101雷达信号处理板上完成系统的设计实现.     

SC-FDE系统中归一化FBLMS算法的研究

单载波频域均衡（SC-FDE）系统传统上采用最小均方误差（MMSE）算法和快速块最小均方（FBLMS）算法进行频域均衡,文中对单载波频域均衡系统中归一化FBLMS算法进行了仿真研究,并与MMSE算法和FBLMS算法进行比较。测试和分析了系统的均方误差和误码率。仿真结果表明：该算法克服了收敛速度和失调量之间的矛盾,提高了算法的收敛速度,降低了误码率,该结果对SC-FDE系统的进一步研究具有参考价值。     

ADSP-TS101S TigerSHARC处理器在信号处理中的应用

本文介绍了利用AD公司新一代高性能DSP芯片TigerSHARC TS101S构成的一个信号处理系统.文中讲述了此DSP芯片的特点,DSP芯片在信号处理系统中的应用以及电路设计.本文对于其它工程设计具有参考价值.     

基于ADSP-TS201S的雷达信号处理研究

介绍了ADI公司数字信号处理（DSP）芯片ADSP-TS201S的主要性能以及雷达信号处理的主要功能和算法,以雷达信号处理中常用的快速傅里叶变换（FFT）算法为例,结合TS201S的结构特点,讨论了如何通过优化软件编程的方法来缩短算法执行时间以满足系统实时性的要求,体现了TS201S对算法适应性强、程序调试方便、可靠性...     

基于ADSP-TS101S的雷达信号处理系统的实现

介绍了基于多片ADSP-TS101S的雷达信号处理系统的具体实现方法,讨论了各种雷达信号处理的具体实现算法,并指出了用ADSP-TS101S设计该雷达信号处理系统时应该注意的问题.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

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正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its