首页 | 本学科首页   官方微博 | 高级检索  
相似文献
 共查询到20条相似文献,搜索用时 93 毫秒
1.
本文提出了一种Bi-MOS混合模式晶体管──BMHMT,其本质上为表面MOS与LBJT共同工作的四端MOSFET,工艺上与MOSFET全兼容。BMHMT具有比单一MOS、单一LBJT及他们的简单叠加更高的电流驱动能力,BMHMT作为一种发射结具有赝异质结特性的器件,在输出电流为每单位宽度0.5mA时电流放大倍数可高达2500(V_(BS)=0.62V),在小的基区电流下,BMHMT的短沟效应明显小于MOSFET。PISCES模拟结果与实验结果成功地证明了BMHMT的以上特点。  相似文献   

2.
王若虚 《微电子学》1994,24(2):22-28
本文介绍了功率BMFET的结构和性能。并对介于标准垂直JFET和功率BJT之间的新型BMFET的实际单元结构的导通和关闭状态特性进行了讨论。同时还讨论了表面栅区的高斯掺杂分布对阻断电压的影响。在相同尺寸和掺杂的条件下,将这一新型BMFET器件与标准功率双极晶体管进行了对比分析。分析结果表明,新型BMFET在穿通和大电流增益时具有较高的额定电流,极低的饱和电压,而且不受电流拥挤现象的影响。  相似文献   

3.
SiC功率器件   总被引:2,自引:0,他引:2  
本文采用计算材料优值和器件模拟的方法预测了SiC的高频大功率特性,综述了目前SiC功率器件的发展最高水平,高压整流器和晶体管如功率MOSFETs,JFETs,MESFETs都具有较小的有源面积,而性能已初步显示出SiC高温大功率工作的优势。  相似文献   

4.
东京K.Shimomura和他的索非亚大学同事已发展一种由光学方法控制的互补金属-氧化物-半导体(CMOS)电压开关。他们对以前所做的工作作了详细说明并用新的CMOS结构开发了以光学方法控制的金属-氧化物-半导体(MOS)场效应晶体管(FET)。普通金属-氧化物-半导体场效应晶体管(MOS-FET)是通过改变栅极上的电压来控制源极和漏极之间电流的。MOSEFT有两类:即p型和n型。通过制作一系列由两类场效应晶体管组成的电路并将这些晶体管连接到不同电源上,栅极极性便变成互补。当p型或n型半导体的栅…  相似文献   

5.
合成了新型的有机半导体LB膜气敏材料(COTDMAPP),其LB多层膜拉制在场效应晶体管上,形成了具有LB-OSFET结构的化学场效应晶体管(ChernFET),该器件置于NO2,NH3,CO和H2S等有害气体中,结果表明在NO2气氛中元件漏电流IDS发生变化,并可检测到2ppm的NO2.这种器件的气敏特性在于FET的电流放大作用及LB膜的有序性的影响.  相似文献   

6.
介绍了移动通信的发展动向和移动通信对半导体技术的要求。给出了具体的器件技术包括Si双极晶体管、SiMOSFET、GaAsHBT、HJFET和HEMT以及电路技术。  相似文献   

7.
WSi_2栅和Si栅CMOS/BESOI的高温特性分析   总被引:1,自引:0,他引:1  
用厚膜BESOI(BondingandEtch-backSilicon-On-Insulator)制备了WSi2栅和Si栅4007CMOS电路,在室温~200℃的不同温度下测量了其P沟、N沟MOSFET的亚阈特性曲线,分析了阈值电压和泄漏电流随温度的变化关系。  相似文献   

8.
飞利浦半导体公司开发了一种具有极低开态电阻和额定电压为200V的功率MOS-FET器件。这种“硅MAX”器件采用沟槽MOS工艺,兼有大功耗和快速开关速度的性能,其100-200V的额定电压来源于DMOS功率MOSFET。这种新器件在开关型功率源,DC/DC转换器以及负载开关应用方面,特别具有吸引力。 新的功率MOSFET的低开态电阻是利用大量制作在硅芯片上的小MOSFET单元并联获得的。在给定硅片上,由于减小了单元的尺寸,增加了单元了数目,从而降低了开态电阻。但单元间距离变近,使单元之间产生相互…  相似文献   

9.
本文对多晶抬高源漏(PESD)MOSFET的结构作了描述,并对深亚微米PESDMOS-FET的特性进行了模拟和研究,看到PESDMOSFET具有比较好的短沟道特性和亚阈值特性,其输出电流和跨导较大,且对热载流子效应的抑制能力较强,因此具有比较好的性能.给出了PESDMOSFET的优化设计方法.当MOSFET尺寸缩小到深亚微米范围时,PESDMOS-FET将成为一种较为理想的器件结构  相似文献   

10.
深亚微米PESD MOSFET特性研究及优化设计   总被引:1,自引:0,他引:1  
本文对多晶抬高源漏(PESD)MOSFET的结构作了描述,并对深亚微米PESDMOS-FET的特性进行了模拟和研究,看到PESDMOSFET具有比较好的短沟道特性和亚阈值特性,其输出电流和跨导较大,且对热载流子效应的抑制能力较强,因此具有比较好的性能.给出了PESDMOSFET的优化设计方法.当MOSFET尺寸缩小到深亚微米范围时,PESDMOS-FET将成为一种较为理想的器件结构  相似文献   

11.
A new power MOSFET Structure with a pn junction--Bipolar Junction MOSFET (BJMOSFET) has been proposed. The device has the advantages of both BJT and FET. The numerical model of the I-V characteristics of BJMOSFET has been obtained on the basis of both numerical and analytical methods. With the software package of Mathematic, we firstly calculate the gain factor, and then simulate the voltage tranmission, voltage output and voltage transfer's characteristic graphs of the BJMOSFET. The simulation result indicates that BJMOSFET has the current density, which is about 25% larger than the power MOSFET, under the same operating conditions and with the same structure parameters, except that the threshold voltage increase a little.  相似文献   

12.
刘新宇  李诚瞻  罗烨辉  陈宏  高秀秀  白云 《电子学报》2000,48(12):2313-2318
采用平面栅MOSFET器件结构,结合优化终端场限环设计、栅极bus-bar设计、JFET注入设计以及栅氧工艺技术,基于自主碳化硅工艺加工平台,研制了1200V大容量SiC MOSFET器件.测试结果表明,器件栅极击穿电压大于55V,并且实现了较低的栅氧界面态密度.室温下,器件阈值电压为2.7V,单芯片电流输出能力达到50A,器件最大击穿电压达到1600V.在175℃下,器件阈值电压漂移量小于0.8V;栅极偏置20V下,泄漏电流小于45nA.研制器件显示出优良的电学特性,具备高温大电流SiC芯片领域的应用潜力.  相似文献   

13.
An analysis of the concave MOSFET   总被引:4,自引:0,他引:4  
The electrical characteristics of the concave MOSFET are analyzed by the two-dimensional numerical method and the theoretical result is in reasonable agreement with the experimental result. Even if the channel length of the concave MOSFET is short, the obtained current-voltage characteristics of the concave MOSFET are quite similar to those of the long-channel normal MOSFET and can be approximated by the normal MOSFET formula. In short-channel concave MOSFET's, the threshold voltage lowering due to the short-channel effect is not observed. It is observed that the threshold voltage of the concave MOSFET depends strongly on the substrate bias voltage as compared with the long-channel normal MOSFET. These observed results are followed by the two-dimensional numerical analysis. The increase of the punch-through breakdown voltage as well as that of the surface induced avalanche breakdown voltage of the concave MOSFET is predicted theoretically. The equivalent circuit model of the concave MOSFET is shown and discussed.  相似文献   

14.
An intelligent power MOSFET with built-in reverse battery protection, which is important for automotive power switches, has been developed. The protection is accomplished by integrating an additional power MOSFET in series with a power MOSFET and the control circuit of the additional power MOSFET. The reverse battery protection is achieved without using external control signals. The positive drain breakdown voltage for the proposed MOSFET is 71 V and the negative drain current at a drain voltage of -16 V is only -750 μA. The on-state resistance is 170 mΩ. This new intelligent power MOSFET can replace the conventional three-terminal power MOSFET's used in automotive applications  相似文献   

15.
功率金属-氧化物半导体场效应晶体管(MOSFET)空间使用时易遭受重离子轰击产生单粒子效应(单粒子烧毁和单粒子栅穿)。本文对国产新型中、高压(额定电压250 V,500 V)抗辐照功率MOSFET的单粒子辐射效应进行了研究,并采取了有针对性的加固措施,使器件的抗单粒子能力显著提升。结果表明:对250 V KW2型功率MOSFET器件进行Bi粒子辐照,在栅压等于0 V时,安全工作的漏极电压达到250 V;对500 V KW5型功率MOSFET器件进行Xe粒子辐照,在栅压等于0 V时,安全工作的漏极电压达到400 V,并且当栅压为-15 V时,安全工作的漏极电压也达到400 V,说明国产中、高压功率MOSFET器件有较好的抗单粒子能力。  相似文献   

16.
When MOSFET is used as a power switch, it is essential to prevent reverse current flow through the parasitic body diodes under reverse voltage condition. A new built-in reverse voltage protection circuit for MOSFETs has been developed. In this design, an area-efficient circuit is used to automatically select the proper well bias voltage to prevent reverse current under the reverse-voltage condition. This built-in reverse protection circuit has been successfully implemented in a high-side power switch application using a 0.6-μm CMOS process. The die area of the protection circuit is only 2.63% of that of a MOSFET. The latch-up immunity is greater than +12 V and -10 V in voltage triggering mode, and greater than ±500 mA in current triggering mode. The protection circuit is not in series with the MOSFET switch, so that the full output swing and high power efficiency are achieved  相似文献   

17.
The E/D gate MOSFET, which has an enhancement and depletion mode region under the same gate, is fabricated by using ion implantation as a tool for shifting threshold voltage. Threshold voltage, transconductance and drain breakdown voltage are studied as functions of implantation dose up to 12 × 1012 cm?2.It is found that, at an appropriate dose, the transconductance of this device is determined solely by the channel length of the enhancement mode region, and is larger than that of a short channel MOSFET with a standard structure but with the same drain breakdown voltage. Moreover, the dependence of threshold voltage on substrate bias measured in this device is found less sensitive to the transconductance than that in the standard short channel MOSFET.  相似文献   

18.
石立春 《现代电子技术》2006,29(23):127-128,130
通过将衬底和栅极连接在一起实现了MOSFET的动态阈值,DTMOS与标准的MOSFET相比具有更高的迁移率,在栅极电压升高时DTMOS阈值电压会随之降低,从而获得了比标准的MOSFET大的电流驱动能力。DTMOS是实现低电压、低功耗的一种有效手段。  相似文献   

19.
提出了一种积累型槽栅超势垒二极管,该二极管采用N型积累型MOSFET,通过MOSFET的体效应作用降低二极管势垒。当外加很小的正向电压时,在N+区下方以及栅氧化层和N-区界面处形成电子积累的薄层,形成电子电流,进一步降低二极管正向压降;随着外加电压增大,P+区、N-外延区和N+衬底构成的PIN二极管开启,提供大电流。反向阻断时,MOSFET截止,PN结快速耗尽,利用反偏PN结来承担反向耐压。N型积累型MOSFET沟道长度由N+区和N外延区间的N-区长度决定。仿真结果表明,在相同外延层厚度和浓度下,该结构器件的开启电压约为0.23 V,远低于普通PIN二极管的开启电压,较肖特基二极管的开启电压降低约30%,泄漏电流比肖特基二极管小近50倍。  相似文献   

20.
Carbon nanotubes have some unique features and special properties that offer a great potential for nano-electronic devices. In this paper, we have analyzed the effect of chiral vector, metal work function, channel length and High-K dielectric on threshold voltage of CNTFET devices. We have also compared the effect of oxide thickness on gate capacitance and justified the advantage of CNTFET over MOSFET in nanometer regime. Simulation on HSPICE tool shows that high threshold voltage can be achieved at low chiral vector in CNTFET. It is also observed that the temperature has a negligible effect on threshold voltage of CNTFET. After that we have simulated and observed the effect of channel length variation on threshold voltage of CNTFET as well as of MOSFET devices and given a theoretical analysis on it. We found an unusual, yet, favorable characteristics that the threshold voltage increases with decreasing channel length in CNTFET devices in deep nanometer regime especially when the gate length is around 10 nm; which is quite contrary to the well known short channel effects in MOSFET. It is observed that at or below 10 nm channel length the threshold voltage increases rapidly in case of CNTFET device whereas in case of MOSFET device the threshold voltage decreases drastically.  相似文献   

设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号