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α-Fe_2O_3纳米粉体的低温燃烧合成与表征 总被引:1,自引:0,他引:1
以硝酸铁.聚乙烯醇为反应体系,采用低温燃烧合成法制备了α-Fe2O3粉体.通过X射线衍射、扫描电镜、透射电镜和能谱分析等测试手段,对产物进行了表征.结果表明,硝酸铁和聚乙烯醇的摩尔比为1∶0.5,150℃时制备的干凝胶加热至400℃可发生燃烧合成反应,此温度下保温煅烧1 h后可得到纳米α-Fe2O3粉体(含少量的γ-Fe2O3),反应产物颗粒边缘光滑,粒度分布均匀,呈褐红色.XRD结果表明,有机物已完全分解,经XRD计算、TEM及纳米粒子分析仪测定,晶粒尺寸在20 nm~50 nm之间. 相似文献
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锡粒氧化-水热法合成纳米二氧化锡 总被引:1,自引:1,他引:0
采用锡粒氧化-水热法,合成了纳米二氧化锡粉体,并用FT-IR,XRD,TEM和DTA等测试手段,对其结构和形貌进行了表征。研究了反应温度、时间、介质及压力对粉体粒度、形貌的影响。结果表明,在180℃水热反应12h,可以得到粒径为4~10nm具有四方相锡石型的二氧化锡粉体:以无水乙醇为反应介质时粒子间的团聚程度明显降低;增大反应压力,颗粒间的团聚程度减小。 相似文献
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氧化沉淀法制备纳米级Mn_3O_4粉体及影响因素 总被引:1,自引:0,他引:1
以硝酸锰、氢氧化钠、氨水为原料,采用水解氧化沉淀法制备了nm级Mn3O4粉体材料。通过正交试验优化反应条件得到尺寸分布均匀,团聚程度小,颗粒分散性强的nm级Mn3O4粉体。研究了制备过程中反应温度、pH值、搅拌速度、反应物浓度等因素对产物组成、晶体结构、晶粒尺寸、形貌及颗粒团聚程度的影响。采用激光粒度分析仪(LPSA)、X射线衍射仪(XRD)、扫描电镜(SEM)以及化学滴定实验对反应产物进行了分析表征。实验结果表明,采用水解氧化沉淀法制粉时,可得到纯度较高的Mn3O4,当工艺参数pH值为10、温度40℃、搅拌速度3000r/min,反应物摩尔浓度c(Mn(NO3)2)∶c(NaOH)∶c(NH4OH)=2.4∶4.8∶0.96时,材料二次颗粒团聚程度最弱,分散性最好,一次纳米颗粒尺寸最小。 相似文献
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采用柠檬酸盐法合成了钙钛矿相的Na0.5Bi0.5TiO3粉体,利用TG-DTA、XRD、SEM及激光粒度仪对Na0.5Bi0.5TiO3粉体进行了分析表征,讨论了前驱体溶液pH值对合成粉体的影响。结果表明,当前驱体溶液pH=8.5,柠檬酸与金属离子摩尔比r(C/Mn+)=1.25,水浴温度为80℃,煅烧温度为600℃时,所制备出的Na0.5Bi0.5TiO3晶体呈球形,其颗粒细小,粒径为100~200 nm。相同条件下,当pH=2.5时产物主要是富含Na、Ti、O的棒状物质。pH=6.5时所得粉体主要是Na0.5Bi0.5TiO3相,粉体颗粒呈球状,粒径为500~600 nm,其中存在少量的块状颗粒,粒径分布不均匀。pH=10.5时产物中含有较多Bi3Ti4O12杂相,粒径较大。 相似文献
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通过Ta掺杂改性钨青铜陶瓷(Sr0.5Ba0.5)1.9Ca0.1NaNb5–xTaxO15(x=0~0.30),分析了Ta掺杂量对其烧结性能、微观结构及介电性能的影响。陶瓷的烧结温度随x的增大略有提高。当x<0.10时,陶瓷的tC和弛豫性变化不大;当x≥0.10时,tm(1kHz)明显降低,从270℃(x=0)降低至231℃(x=0.30)。且tm随频率增加向高温移动,弛豫性明显增强。认为Ta掺杂引起其性能变化是由于Ta—O键与Nb—O键键能的差异,导致陶瓷氧八面体中心离子位移量以及A位离子有序程度的变化所致。 相似文献
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《Microelectronics Journal》2003,34(5-8):623-625
The electroluminescence from PPV and the blue light emission from PPP constitute exciting subjects of study. The band gap of these semiconducting polymers can be engineered in a wide range from red to ultraviolet by structural changes made on them. In the present work, we present a theoretical approach based on semiempirical and ab initio total energy and force calculations of PPV and PPP. We perform a conformational analysis in order to investigate the connection between their structural, optical and electronic properties. We use the large cell approach, in connection with the semiempirical quantum method Extended Hückel (BICON-CEDiT code) and the density functional theory (DFT) within the full-potential linearized augmented-plane-wave method (FPLAPW) as implemented in the computational code WIEN2k. Our results are compared to other calculations and to optical absorption measurements. 相似文献
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采用熔体快淬法制备了纳米复合(Nd1-xPrx)9.4Fe75.6Ti4B10.5C0.5(x为0,0.2,0.4,0.6,0.8和1.0)合金薄带,研究了Pr对合金薄带结构与磁性能的影响规律。结果表明:Pr降低了合金薄带的晶化温度,使合金薄带晶粒变得粗大,不利于合金矫顽力的提高。Pr对合金薄带磁性能的影响不大,不同Nd和Pr比例的合金薄带在最佳热处理条件下,剩磁Br在0.86 T与0.90 T之间,内禀矫顽力Hcj在1 000 kA/m左右,最大磁能积(BH)max介于130 kJ/m3与136 kJ/m3之间。 相似文献
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Semiconductors - Electron states in the conduction band of (111)-oriented (AlAs)M(GaAs)N superlattices (SLs) with M≥N and N&;lt;10 are considered. The properties of such SLs are mainly... 相似文献
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采用两步烧结工艺制备Sr0.3Ba0.7Bi3.7La0.3Ti4O15铁电陶瓷,研究了烧结工艺对陶瓷的晶相和介电性能的影响。结果表明:适当提高最高温度、保温温度和保温时间可改善陶瓷的介电性能。当最高温度为1180~1200℃,在1050~1080℃保温5~15h时,其εr为238~262,tanδ小于10–2,σ为1.0×10–11~10–12S·m–1。该烧结工艺可减少铋的挥发,降低氧空位浓度,因而减弱了陶瓷的高温低频耗散现象。随着保温时间的增加,高温电导得到有效抑制,在1050℃保温15h样品的σ降低了一个数量级,在280℃时为5.2×10–9S·m–1。 相似文献
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徐至中 《固体电子学研究与进展》1989,(4)
The DOS, JDOS and ε2(Ω) of monolayer superlattice Ga0.47ln0.53As/ InP(110) have been calculated by a tight-binding approach and compared with that of alloy Ga0.235ln0.765P0.5As0.5 which has the same stoi-chiometric composition as the monolayer superlattice. By using the techniques of the group theory we have obtained the expressions of momentum matrix elements between valence band states and conduction band states with four adjustable parameters. These parameters are determined by fitting the calculated values of ε2(Ω) with the experimental values for InP, GaAs and InAs. Our results show that the superlattice periodicity makes its DOS, JDOS and ε2(Ω) different from those of alloy in varying degree. Due to the folding of Brillouin zone, the JDOS of superlattice turns round in comparison with that of alloy. The momentum matrix elements have different effects for the superlattices and alloys.For the alloys, they can only change the amplitudes of peaks but not the positions of peaks; however, for the superlattices both amplitude and position can be changed. 相似文献
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The deformation potentials of electron scattering at short-wavelength phonons for intervalley transitions in the conduction band of short-period (GaAs) m (AlAs) n (001) (m, n = 1, 2, 3) superlattices are determined by the electron density functional method. The dependences of the electron and phonon states and deformation potentials on the layer thickness in the superlattices are analyzed. The results of ab initio calculations are in good agreement with the data of empirical calculation of the deformation potentials integrated over phonons, but differ from data on the corresponding potentials for partial scattering channels because of approximations of the phenomenological model of interatomic binding. 相似文献
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徐至中 《固体电子学研究与进展》1998,(4)
采用建立在经验赝历势基础上的推广k·P方法计算了复合量子阱Ge0.3Si0.7/(Ge0.3Si0.7)m-(Si)m/Ge0.3Si0.7的电子束缚能组及其活界面方向的色激关系,并与通常的单带模型下的包络函数方法的计算结果进行了比较。结果表明由于超晶格中子能带的形成,邻近能带间的互作用使通常单带模型下的包络函数方法不再能适用于复合量子阱的计算。计算结果也表明复合量子阱的电子束缚能级沿界面方向在kx<0.1(2π/a)范围内基本上不随kx变化。 相似文献