Birefringence suppression of UV-induced refractive index with grooves in silica-based planar lightwave circuits

An effective method for suppressing the birefringence of a UV-induced refractive index change is demonstrated for phase trimming of waveguides in planar lightwave circuits. By employing grooves on both sides of the waveguide to control the UV-induced strain, a significant reduction is achieved from 1.46/spl times/10/sup -4/ to 0.11/spl times/10/sup -4/ in the UV-induced birefringence for a /spl pi/ phase shift averaged between the TE and TM modes in a 2 mm-long waveguide.     

Minimal group refractive index dispersion and gain evolution in ultra-broad-band quantum cascade lasers

The group refractive index dispersion in ultra-broad-band quantum cascade (QC) lasers has been determined using Fabry-Perot spectra obtained by operating the lasers in continuous wave mode below threshold. In the wavelength range of 5-8 /spl mu/m, the global change of the group refractive index is as small as +8.2 /spl times/ 10/sup -3/ /spl mu/m/sup -1/. Using the method of Hakki and Paoli (1975), the subthreshold gain of the lasers has furthermore been measured as a function of wavelength and current. At the wavelength of best performance, 7.4 /spl mu/m, a modal gain coefficient of 16 cm/spl middot/kA/sup -1/ at threshold and a waveguide loss of 18 cm/sup -1/ have been estimated. The gain evolution confirms an earlier assumption that cross-absorption restricted laser action to above 6 /spl mu/m wavelength.     

Full characterization of packaged Er-Yb-codoped phosphate glass waveguides

We present a procedure for the characterization of packaged Er-Yb-codoped phosphate glass waveguides. The procedure is based on precise measurements of the output optical powers when the waveguide is diode-laser pumped at 980 nm. The dependence of these optical powers on the input pump power is then fitted to the results from a numerical model that describes in detail the propagation of the optical powers inside the waveguide. The best fit is obtained for the following parameters: the signal wavelength scattering losses are /spl alpha/(1534)=8.3/spl times/10/sup -2/ dB/cm, the Yb/sup 3+/ absorption and emission cross sections (/spl ap/980 nm) are 5.4/spl times/10/sup -25/ m/sup 2/ and 7.0/spl times/10/sup -25/ m/sup 2/, the Er/sup 3+/ absorption and emission cross sections (/spl ap/980 nm) are 1.6/spl times/10/sup -25/ m/sup 2/ and 1.2/spl times/10/sup -25/ m/sup 2/, the Yb/sup 3+/--Er/sup 3+/ energy-transfer coefficient is 1.8/spl times/10/sup -23/ m/sup 3//s and the cooperative-upconversion coefficient is 8/spl times/10/sup -25/ m/sup 3//s. An approximate method is introduced that allows the determination of the absorption and emission cross section distributions for the erbium /sup 4/I/sub 13/2//spl hArr//sup 4/I/sub 15/2/ transition from the amplified spontaneous emission power spectrum.     

A micromachined Pirani gauge with dual heat sinks

This paper reports a micromachined Pirani gauge with dual heat sinks that can be integrated with microelectromechanical systems (MEMS) devices inside a vacuum package to monitor long-term pressure changes and stability inside the package. The Pirani gauge utilizes small gaps (<1 /spl mu/m) between its heater and two thermal heat sinks to obtain large dynamic range (20 mtorr to 2 torr) and high sensitivity (3.5/spl times/10/sup 5/ (K/W)/torr). The gauge is 2/spl times/2 mm/sup 2/ in size, is fabricated using the dissolved wafer process (DWP) on a glass substrate, and utilizes dielectric bridges for signal routing. Measurements show the low end of the dynamic range can be extended by reducing the gap distance between the heater and thermal sinks, which matches well with analytical modeling. This gauge shows an uncertainty of 50 /spl mu/torr and a detectable leak rate of 3.1/spl times/10/sup -16/ cm/sup 3//s, assuming a common micropackage volume of 1.6/spl times/10/sup -5/ cm/sup 3/, which represents at least four orders of magnitude improvement over traditional leak testing.     

4H-SiC UV photo detectors with large area and very high specific detectivity

Pt/4H-SiC Schottky photodiodes have been fabricated with the device areas up to 1 cm/sup 2/. The I-V characteristics and photoresponse spectra have been measured and analyzed. For a 5 mm/spl times/5 mm area device leakage current lower than 10/sup -15/ A at zero bias and 1.2/spl times/10/sup -14/ A at -1 V have been established. The quantum efficiency is over 30% from 240 to 320 nm. The specific detectivity, D/sup */, has been calculated from the directly measured leakage current and quantum efficiency are shown to be higher than 10/sup 15/ cmHz/sup 1/2//W from 210 to 350 nm with a peak D/sup */ of 3.6/spl times/10/sup 15/ cmHz/sup 1/2//W at 300 nm.     

A resonant tunneling quantum-dot infrared photodetector

A novel device-resonant tunneling quantum-dot infrared photodetector-has been investigated theoretically and experimentally. In this device, the transport of dark current and photocurrent are separated by the incorporation of a double barrier resonant tunnel heterostructure with each quantum-dot layer of the device. The devices with In/sub 0.4/Ga/sub 0.6/As-GaAs quantum dots are grown by molecular beam epitaxy. We have characterized devices designed for /spl sim/6 /spl mu/m response, and the devices also exhibit a strong photoresponse peak at /spl sim/17 /spl mu/m at 300 K due to transitions from the dot excited states. The dark currents in the tunnel devices are almost two orders of magnitude smaller than those in conventional devices. Measured values of J/sub dark/ are 1.6/spl times/10/sup -8/ A/cm/sup 2/ at 80 K and 1.55 A/cm/sup 2/ at 300 K for 1-V applied bias. Measured values of peak responsivity and specific detectivity D/sup */ are 0.063 A/W and 2.4/spl times/10/sup 10/ cm/spl middot/Hz/sup 1/2//W, respectively, under a bias of 2 V, at 80 K for the 6-/spl mu/m response. For the 17-/spl mu/m response, the measured values of peak responsivity and detectivity at 300 K are 0.032 A/W and 8.6/spl times/10/sup 6/ cm/spl middot/Hz/sup 1/2//W under 1 V bias.     

High mobility NMOSFET structure with high-/spl kappa/ dielectric

High-/spl kappa/ NMOSFET structures designed for enhancement mode operation have been fabricated with mobilities exceeding 6000 cm/sup 2//Vs. The NMOSFET structures which have been grown by molecular beam epitaxy on 3-in semi-insulating GaAs substrate comprise a 10 nm strained InGaAs channel layer and a high-/spl kappa/ dielectric layer (/spl kappa//spl cong/20). Electron mobilities of >6000 and 3822 cm/sup 2//Vs have been measured for sheet carrier concentrations n/sub s/ of 2-3/spl times/10/sup 12/ and /spl cong/5.85/spl times/10/sup 12/ cm/sup -2/, respectively. Sheet resistivities as low as 280 /spl Omega//sq. have been obtained.     

A dependency of quantum efficiency of silicon CMOS n/sup +/pp/sup +/ LEDs on current density

A dependency of quantum efficiency of nn/sup +/pp/sup +/ silicon complementary metal-oxide-semiconductor integrated light-emitting devices on the current density through the active device areas is demonstrated. It was observed that an increase in current density from 1.6/spl times/10/sup +2/ to 2.2/spl times/10/sup +4/ A/spl middot/cm/sup -2/ through the active regions of silicon n/sup +/pp/sup +/ light-emitting diodes results in an increase in the external quantum efficiency from 1.6/spl times/10/sup -7/ to 5.8/spl times/10/sup -6/ (approximately two orders of magnitude). The light intensity correspondingly increase from 10/sup -6/ to 10/sup -1/ W/spl middot/cm/sup -2//spl middot/mA (approximately five orders of magnitude). In our study, the highest efficiency device operate in the p-n junction reverse bias avalanche mode and utilize current density increase by means of vertical and lateral electrical field confinement at a wedge-shaped n/sup +/ tip placed in a region of lower doping density and opposite highly conductive p/sup +/ regions.     

Formation of Ni germano-silicide on single crystalline Si/sub 0.3/Ge/sub 0.7//Si

We have studied the Ni and Co germano-silicide on Si/sub 0.3/Ge/sub 0.7//Si. The Ni germano-silicide shows a low sheet resistance of 4-6 /spl Omega///spl square/on both P/sup +/N and N/sup +/P junctions, which is much smaller than Co germano-silicide. In addition, small junction leakage currents of 3/spl times/10/sup -8/ A/cm/sup 2/ and 2/spl times/10/sup -7/ A/cm/sup 2/ are obtained for Ni germano-silicide on P/sup +/N and N/sup +/P junctions, respectively. The good germano-silicide integrity is due to the relatively uniform thickness as observed by cross-sectional TEM.     

Thin-film transistors on plastic and glass substrates using silicon deposited by microwave plasma ECR-CVD

Thin-film transistors (TFTs) were fabricated on polyimide and glass substrates at low temperatures using microwave ECR-CVD deposited amorphous and nanocrystalline silicon as active layers. The amorphous Si TFT fabricated at 200 /spl deg/C on the polyimide foil had a saturation region field effect mobility of 4.5 cm/sup 2//V-s, a linear region mobility of 5.1 cm/sup 2//V-s, a threshold voltage of 3.7 V, a subthreshold swing of 0.69 V/decade, and an ON/OFF current ratio of 7.9 /spl times/ 10/sup 6/. This large mobility and high ON/OFF current ratio were attributed to the high-quality channel materials with less dangling bond defect states. Nanocrystalline Si TFTs fabricated on glass substrates at 400 /spl deg/C showed a saturation region mobility of 14.1 cm/sup 2//V-s, a linear region mobility of 15.3 cm/sup 2//V-s, a threshold voltage of 3.6 V, and an ON/OFF current ratio of 6.7 /spl times/ 10/sup 6/. TFT performance was mostly independent of substrate type when fabrication conditions were the same.     

Fabrication of Germanosilicate glass optical fibers containing Tm/sup 2+/ ions and their nonlinear optical properties

Germanosilicate glass optical fibers incorporated with the Tm/sup 2+/ ions were fabricated to enhance optical nonlinearity by providing a strong reduction environment based on the solution doping technique in the modified chemical vapor deposition (MCVD) process. The incorporation of the Tm/sup 2+/ ions into the fiber core was identified by the electron paramagnetic resonance (EPR) spectrum in the fiber preform, and the absorption and emission properties between 350 and 1600 nm of the Tm/sup 2+/ ions in optical fibers and the fiber preform. A strong broad absorption band due to the Tm/sup 2+/ ions appeared from 350 to /spl sim/900 nm, and a broad emission from /spl sim/600 to /spl sim/1050 nm and the other emission from /spl sim/1050 to /spl sim/1300 nm, which were not shown in the Tm/sup 3+/ ions, were found upon Ar-ion laser pumping at 515 nm. Both absorption and emission results confirm that the Tm/sup 2+/ ions in the germanosilicate glass have the 4f-5d energy band from 350 to /spl sim/900 nm and the 4f-4f energy level at /spl sim/1115 nm. Also, the resonant nonlinearity at /spl sim/1310 and /spl sim/1530 nm due to the Tm/sup 2+/ ions in the fiber was measured upon the 515 nm optical pumping by using a long-period fiber grating (LPG) pair method. The nonlinear refractive index n/sub 2/ at /spl sim/1310 and /spl sim/1530 nm was found to be /spl sim/4/spl times/10/sup -15/ m/sup 2//W, where 70% and 30% of the n/sub 2/ are attributed to the nonradiative transitions and the radiative transitions, respectively.     

Design and fabrication of RESURF MOSFETs on 4H-SiC(0001), (112~0), and 6H-SiC(0001)

Design and fabrication of lateral SiC reduced surface field (RESURF) MOSFETs have been investigated. The doping concentration (dose) of the RESURF and lightly doped drain regions has been optimized to reduce the electric field crowding at the drain edge or in the gate oxide by using device simulation. The optimum oxidation condition depends on the polytype: N/sub 2/O oxidation at 1300/spl deg/C seems to be suitable for 4H-SiC, and dry O/sub 2/ oxidation at 1250/spl deg/C for 6H-SiC. The average inversion-channel mobility is 22, 78, and 68 cm/sup 2//Vs for 4H-SiC(0001), (112~0), and 6H-SiC(0001) MOSFETs, respectively. RESURF MOSFETs have been fabricated on 10-/spl mu/m-thick p-type 4H-SiC(0001), (112~0), and 6H-SiC(0001) epilayers with an acceptor concentration of 1/spl times/10/sup 16/ cm/sup -3/. A 6H-SiC(0001) RESURF MOSFET with a 3-/spl mu/m channel length exhibits a high breakdown voltage of 1620 V and an on-resistance of 234 m/spl Omega//spl middot/cm/sup 2/. A 4H-SiC(112~0) RESURF MOSFET shows the characteristics of 1230 V-138 m/spl Omega//spl middot/cm/sup 2/.     

Thin-film persistent current switch

We have developed a fast, low power heat switch for switching a niobium thin film between the normal and superconducting state. The sputtered niobium film (400 nm thick, 100 /spl mu/m wide) has a critical current density of 5/spl times/10/sup 10/ Am/sup -2/. Switching is produced by joule heating a small section of the niobium film with a titanium thin-film resistor. With the heat switch in vacuum, the minimum heater power needed to switch to the normal state was 4.5/spl times/10/sup -5/ W. A simple three-dimensional thermal model shows that the minimum power is primarily determined by the thermal conductivity of the substrate. We have achieved response times less than 10/sup -6/ s.     

Prepulse-free petawatt laser for a fast ignitor

We have developed a prepulse-free short-pulse Nd:glass laser system of 0.9-PW peak power to heat a pre-imploded high-density plasma. An optical parametric chirped amplification system is introduced to reduce the prepulses to an amplitude (1.5/spl times/10/sup -8/) of that of the main pulse. The compressor is a double-path grating pair system 94 cm in diameter compressing the 50-cm-diameter laser beam to 470 fs. An off-axis parabolic mirror has focused the 420-J energy to an intensity of 2.5/spl times/10/sup 19/ W/spl middot/cm/sup -2/. Part of the front end of the chirped pulse is seeded into the preamplifier of the GEKKO XII laser, used to implode a pellet target, to enable the petawatt laser to irradiate the pre-imploded pellet during stagnation of a few tens of picoseconds.     

Vacuum-ultraviolet laser-induced refractive-index change and birefringence in standard optical fibers

Strong photosensitivity responses with the use of above-bandgap 157-nm F/sub 2/-laser radiation are reported for standard germanosilicate fiber. A large 1.3/spl times/10/sup -3/ effective index change at 1.55 /spl mu/m was inferred by trimming strong and weak Bragg gratings in hydrogen-free fiber. The F/sub 2/-laser fluence-processing window of <50 mJ/cm/sup 2/ is much lower than with traditional ultraviolet (UV) lasers. For hydrogen-soaked fiber, highly asymmetric refractive-index profiles were noted by atomic force microscopy and microreflection microscopy, yielding a peak index change of >0.01 across a small 1-/spl mu/m penetration depth at the fiber core. The index asymmetry appears to underlie the large >5/spl times/10/sup -5/ value of laser-induced birefringence.     

Femtosecond laser writing Bragg gratings in pure silica photonic crystal fibres

The fabrication of Bragg gratings in pure silica photonic crystal fibres using ultra-violet femtosecond laser radiation at 267 nm is reported. Gratings have been fabricated with a depth of up to 10 dB and an average index change of /spl Delta/n> 4/spl times/10/sup -4/. Thermal annealing investigations indicate that our grating type is not type II.     

Photosensitivity and application with 157-nm F/sub 2/ laser radiation in planar lightwave circuits

Photosensitivity studies of germanosilica planar waveguides were carried out with short-wavelength 157-nm light from an F/sub 2/ laser. More than a 5/spl times/10/sup -3/ refractive-index change was induced in a nonuniform index profile concentrated near the cladding-core interface and confirmed by an atomic force microscopy in 157-nm radiated fiber. This profile geometry narrows with the laser exposure to offer practical application in trimming phase errors and controlling birefringence in frequency domain modulators where a 1.7/spl times/10/sup -3/ effective index change and a 5/spl times/10/sup -4/ birefringence change were induced, respectively. The 157-nm photosensitivity response is more than 15 times stronger than that by a 248-nm KrF laser and more than twofold stronger than that by a 193-nm ArF laser.     

Bragg gratings written in all-SiO/sub 2/ and Ge-doped core fibers with 800-nm femtosecond radiation and a phase mask

Femtosecond laser pulses at 800 nm and 120 fs were used to fabricate high-quality retroreflecting fiber Bragg gratings in standard Ge-doped telecom fiber (Corning SMF-28) and all-silica-core Fluorine doped cladding single-mode fiber using a deep-etch silica zero-order ed phase mask. Induced index modulations of 1.9/spl times/10/sup -3/ were achieved with peak power intensities of 2.9/spl times/10/sup 12/ W/cm/sup 2/ without any fiber sensitization such as hydrogen loading. The fiber gratings have annealing characteristics similar to type II damage fiber gratings and demonstrate stable operation at temperatures as high as 950/spl deg/C. The grating devices exhibit low polarization dependence. The primary mechanism of induced index change results from a structural modification to the fiber core.     

Trimming phase and birefringence errors in planar lightwave circuits with deep ultraviolet femtosecond laser

A deep ultraviolet femtosecond laser was employed to trim phase and birefringence errors in silica planar lightwave circuits. A permanent refractive index change of /spl sim/3.8/spl times/10/sup -4/ and a birefringence change of 1.0/spl times/10/sup -4/ were induced in hydrogen-free Mach-Zehnder planar waveguide circuits. The ultrafast laser enhances the ultraviolet photosensitivity response in silica waveguides by two orders of magnitude greater than that of a nanosecond 248 nm KrF excimer laser.     

Fabrication and characterization of 11-kV normally off 4H-SiC trenched-and-implanted vertical junction FET

This letter reports the first demonstration of 101 kV trenched-and-implanted normally off 4H-SiC vertical junction field-effect transistor (TI-VJFET) with a 120 /spl mu/m /spl sim/4.9/spl times/10/sup 14/ cm/sup -3/-doped drift layer. Blocking voltages (V/sub B/) of 10 kV to 11 kV have been measured. The best specific on-resistance (R/sub SP/_/sub ON/) normalized to source active area has been determined to be 130 m/spl Omega//spl middot/cm/sup 2/. Three-dimensional computer modeling including current spreading effect shows that the TI-VJFET would have a specific resistance of 168 m/spl Omega//spl middot/cm/sup 2/ if it is scaled up substantially in size.