Sn-58Bi-0.5Ce/Cu界面金属间化合物的性能研究

研究了Sn-58Bi-0.5Ce/Cu钎焊接头在120℃时效过程中界面组织形貌及金属间化合物层(IMC)的厚度变化。结果表明:在Sn-58Bi-0.5Ce/Cu钎焊接头界面处形成了较为平坦的双层金属间化合物,靠近钎料的上层为Cu6Sn5相,邻近Cu基板的下层为Cu3Sn相。等温时效处理后,IMC层逐渐凸起,且随着时效时间的增加,IMC层不断增厚。通过对实验数据进行拟合,得到钎焊接头界面IMC层的生长速度常数为5.77×10–17m2/s。     

热疲劳载荷作用下不同成分BGA焊点可靠性

针对微电子组装中常见的BGA封装形式,对比采用3种不同成分的BGA焊球和焊膏组合(锡铅共晶焊球和锡铅共晶焊膏Sn63Pb37、Sn3Ag0.5Cu焊球和锡铅共晶焊膏以及Sn3Ag0.5Cu焊球和Sn3Ag0.5Cu焊膏)焊接得到的BGA焊接界面。经过不同周期的热疲劳试验后,在金相显微镜和电子背散射衍射下观察,发现Sn3Ag0.5Cu焊球和锡铅共晶焊膏混装形成的BGA焊点中黑色的富锡相均匀弥散分布在焊球内,在热循环载荷作用下极难形成再结晶,抗热疲劳性能最好。     

添加SAC微粒对SnBi锡膏焊后性能的影响

采用机械混合的方法,向Sn58Bi(Sn Bi)共晶锡膏中添加不等量的Sn-3.0Ag-0.5Cu(SAC)微粒,制备Sn Bi-SAC复合锡膏。在不改变Sn Bi锡膏低温焊接工艺的前提下,改善Sn Bi锡膏焊后合金硬脆缺陷。实验结果表明:Sn Bi-SAC复合锡膏中SAC微粒含量分别为质量分数0,3%,5%,8%时,采用180℃低温焊接均可获得良好的钎焊效果。与Sn Bi共晶锡膏焊后合金相比较,Sn Bi-SAC复合锡膏中SAC微粒含量的增加促使焊后合金微观组织中的β-Sn相含量与晶粒尺寸增大,改善了Sn Bi焊后合金中富Bi相的致密网状结构。当锡膏中SAC微粒含量由0增大至质量分数8%时,合金硬度从213.9 m Pa下降到117 m Pa,对Sn Bi锡膏焊后合金硬脆缺陷起到改善效果。     

时效对Sn3.0Cu0.15Ni/Cu界面组织的影响

研究了150℃时效0,200,500h对Sn3.0Cu0.15Ni/Cu界面组织结构的影响.结果表明:界面金属间化合物层由Cu6Sn5层和Cu3Sn层组成,质量分数为0.15％的Ni的加入会使IMC层最初变厚,但在时效过程中,热稳定性强的界面化合物(Cu,Ni)6Sn5的生成,会抑制Cu3Sn化合物层的生长;同时Ni的加入会降低Cu6Sn5颗粒的长大速度,并且随着时效时间的延长,Cu6Sn5颗粒的形貌呈多面体结构.     

Sn基无铅钎料与Cu基板间化合物Cu_6Sn_5的研究进展

主要介绍了Sn基无铅钎料和Cu基板在界面处反应生成的金属间化合物Cu6Sn5与焊接点可靠性的关系。综述了近年来Cu6Sn5的研究进展,内容包括:Sn基无铅钎料在Cu基板上形成的Cu6Sn5的生长形态、晶体取向、生长动力学以及纳米颗粒对界面Cu6Sn5尺寸及形貌的影响。     

热疲劳载荷作用下不同成分BGA互连焊点可靠性研究

本文针对微电子组装中常见的BGA 封装形式,对比采用三种不同成分的BGA焊球和焊膏组合（锡铅共晶焊球和锡铅共晶焊膏、Sn3Ag0.5Cu 焊球和锡铅共晶焊膏、以及Sn3Ag0.5Cu焊球和Sn3Ag0.5Cu焊膏）焊接得到的BGA 互连点,经过不同周期的热疲劳试验后,在金相显微镜和电子背散射衍射下观察,发现Sn3Ag0.5Cu焊球和锡铅共晶焊膏混装形成的BGA焊点中黑色的富锡相均匀弥散分布在焊球内,在热循环载荷作用下极难形成再结晶,抗热疲劳性能最好。     

Sn0.7Cu-xEr/Cu焊点界面反应及其化合物层生长行为研究

通过回流焊工艺制备了Sn0.7Cu-x Er/Cu(x=0,0.1,0.5)钎焊接头,研究钎焊温度及等温时效时间对接头的界面金属间化合物(IMC)的形成与生长行为的影响。结果表明:Sn0.7Cu钎料中微量稀土Er元素的添加,能有效抑制钎焊及时效过程中界面IMC的形成与生长。在等温时效处理过程中,随着时效时间的延长,界面反应IMC层不断增厚,在相同时效处理条件下,Sn0.7Cu0.5Er/Cu焊点界面IMC层的厚度略小于Sn0.7Cu0.1Er/Cu焊点界面的厚度。通过线性拟合方法,得到Sn0.7Cu0.1Er/Cu和Sn0.7Cu0.5Er/Cu焊点界面IMC层的生长速率常数分别为3.03×10–17 m2/s和2.67×10–17 m2/s。     

应用于3D集成的高密度Cu/Sn微凸点键合技术

3D-IC技术被看作是应对未来半导体产业不断增长的晶体管密度最有希望的解决方案,而微凸点键合技术是实现3D集成的关键技术之一.采用电镀工艺制作了直径为50μm、间距为130μm的高密度Cu/Sn微凸点,分析了不同预镀时间及电流密度对Cu微凸点形成质量的影响,并使用倒装焊机实现了高密度Cu/Sn微凸点的键合.利用直射式X射线、分层式X射线对键合样片进行无损检测,结果表明键合对准精度高,少量微凸点边缘有锡被挤出,这是由于锡层过厚导致.观察键合面形貌,可以发现Cu和Sn结合得不够紧密.进一步对键合面金属间化合物进行能谱分析,证实存在Cu6 Sn5和Cu3 Sn两种物质,说明Cu6 Sn5没有与Cu充分反应生成稳态产物Cu3 Sn,可以通过增加键合时间、减少Sn层厚度或增加退火工艺来促进Cu3 Sn的生成.     

表面组装（SMT）回流焊工艺论述

一．回流焊接温度曲线： 作温度曲线是确定在回流整个周期内印刷电路板装配的必须经受的时间／温度关系的过程，它取决于锡膏的特性，如合金锡球尺寸，金属含量和锡膏的化学成份。装配的量表面元件形状的复杂性，和基板的导热性．以炉子给出足够的热能的能力．所有都影响热电偶的设定和炉子传送带的速度，回流焊炉的热传导效率和操作员的经验一起影响焊接曲线的工艺质量。锡膏制造商提供了基本的时间温度关系资料。     

Sn-3.0Ag-0.5Cu/Cu焊点可靠性研究

采用铺展面积法研究了Sn-3.0Ag-0.5Cu无铅钎料在不同温度下的润湿性能,同时探讨了150℃等温时效对Sn-3.0Ag-0.5Cu/Cu焊点界面组织及力学性能的影响。结果表明,随着钎焊温度的升高,Sn-3.0Ag-0.5Cu钎料的润湿性能明显增加。焊后钎料/Cu界面处对应的金属间化合物为Cu6Sn5相,经150℃时效,界面层的形貌由原来的齿状逐渐转化为层状,且厚度随着时效时间的增加而增加。发现界面层金属间化合物厚度与时效时间的二次方根成线性关系。对焊点在时效过程中的力学性能进行分析,发现Sn3.0Ag0.5Cu/Cu焊点的力学性能随着时效时间的增加逐渐降低,时效初期,焊点的力学性能下降较快,后期趋于平缓。     

Interfacial behaviors of Sn-Pb,Sn-Ag-Cu Pb-free and mixed Sn-Ag-Cu/Sn-Pb solder joints during electromigration

SnPb-SnAgCu mixed solder joints with Sn-Pb soldering Sn-Ag-Cu Pb-free components are inevitably occurred in the high reliability applications. In this study, the interfacial behaviors in Sn-37Pb and Sn-3.0Ag-0.5Cu mixed solder joints was addressed and compared with Sn-37Pb solder joints and Sn-3.0Ag-0.5Cu solder joints with the influence from isothermal aging and electromigration. Considering the difference on the melting point between Sn-3.0Ag-0.5Cu and Sn-37Pb solder, two mixed solder joints: partial mixing and full mixing between Sn-Pb and Sn-Ag-Cu solders were reached with the peak reflowing temperature of 190 and 250 °C, respectively. During isothermal aging, the intermetallic compound (IMC) layer increased with aging time and its growth was diffusion controlled. There was also no obvious affect from the solder composition on IMC growth. After electromigration with the current density of 2.0 × 10³ A/cm², Sn-37Pb solder joints showed the shortest lifetime with the cracks observed at the cathode for the stressing time < 250 h. In Sn-3.0Ag-0.5Cu Pb-free solder joints, current stressing promoted the growth of IMC layer at the interfaces, but the growing rate of IMC at the anode interface was far faster than that at the cathode interface. Therefore, there existed an obvious polarity effect on IMC growth in Sn-Ag-Cu Pb-free solder joints. After Sn-37Pb was mixed with Sn-3.0Ag-0.5Cu Pb-free solder, whether the partial mixing or the full mixing between Sn-Pb and Sn-Ag-Cu can obviously depress both the crack formation at the cathode side and the IMC growth at the anode.     

Influence of interfacial reaction layer on reliability of chip-scale package joint from using Sn-37Pb and Sn-8Zn-3Bi solder

The microstructure of Sn-37Pb and Sn-8Zn-3Bi solders and the full strength of these solders with an Au/Ni/Cu pad under isothermal aging conditions were investigated. The full strengths tended to decrease as the aging temperature and time increased, regardless of the properties of the solders. The Sn-8Zn-3Bi had higher full strength than Sn-37Pb. In the Sn-37Pb solder, Ni₃Sn₄ compounds and irregular-shaped Pb-rich phase were embedded in a β-Sn matrix. The Ni₃Sn₄ compounds were observed at the interface between the solder and pad. The microstructure of the as-reflowed Sn-8Zn-3Bi solder mainly consists of the β-Sn matrix scattered with Zn-rich phase. Zinc first reacted with Au and then was transformed to the AuZn compound. With aging, Ni₅Zn₂₁ compounds were formed at the Ni layer. Finally, a Ni₅Zn₂₁ phase, divided into three layers, was formed with column-shaped grains, and the thicknesses of the layers were changed.     

Aging study on interfacial microstructure and solder-ball shear strength of a wafer-level chip-size package with Au/Ni metallization on a Cu pad

Eutectic solder balls (63Sn-37Pb) joined to Cu pads with an Au/Ni metallization have been widely used in wafer-level chip-size package (WLCSP) technology for providing electrical and mechanical interconnections between components. However, some reliability issues must be addressed regarding the intermetallic compounds (IMCs). The formation of a brittle IMC layer between the solder/Cu pad interface impacts considerably upon the solder-ball shear strength. In addition, it will degrade the long-term operating reliability of the WLCSP. This study investigates, by means of experiments, the growth of the IMC layer under isothermal aging for the eutectic Sn-Pb solder reflowed on a Cu pad with an Au/Ni metallization. Forming the Cu pad with an Au/Ni metallization was achieved by a simple semiconductor-manufacturing process. The effects of the intermetallic layer on solder-ball shear strength were examined for various parameters, including the thickness of the Au layer, solder-ball size, and the diameter of the Cu pad. Experimental results indicate that two IMC layers, Au_0.5Ni_0.5Sn₄ and Ni₃Sn₄, form at the solder/Cu pad interface after aging. The Au_0.5Ni_0.5Sn₄ intermetallic layer dominates the total thickness of the IMC layer and grows with aging time while the solder-ball shear strength decreases after aging. The degradation of the solder-ball shear strength was found to be caused mainly by the formation of the Au_0.5Ni_0.5Sn₄ layer. The experimental results established that a thinner Au layer on Cu pad can effectively control the degradation of solder-ball shear strength, and this is especially true for smaller ball sizes.     

Interfacial reaction and joint reliability of fine-pitch flip-chip solder bump using stencil printing method

This study was focused on the formation and reliability evaluation of solder joints with different diameters and pitches for flip chip applications. We investigated the interfacial reaction and shear strength between two different solders (Sn-37Pb and Sn-3.0Ag-0.5Cu, in wt.%) and ENIG (Electroless Nickel Immersion Gold) UBM (Under Bump Metallurgy) during multiple reflow. Firstly, we formed the flip chip solder bumps on the Ti/Cu/ENIG metallized Si wafer using a stencil printing method. After reflow, the average solder bump diameters were about 130, 160 and 190 μm, respectively. After multiple reflows, Ni₃Sn₄ intermetallic compound (IMC) layer formed at the Sn-37Pb solder/ENIG UBM interface. On the other hand, in the case of Sn-3.0Ag-0.5Cu solder, (Cu,Ni)₆Sn₅ and (Ni,Cu)₃Sn₄ IMCs were formed at the interface. The shear force of the Pb-free Sn-3.0Ag-0.5Cu flip chip solder bump was higher than that of the conventional Sn-37Pb flip chip solder bump.     

Interfacial reaction study on a solder joint with Sn-4Ag-0.5Cu solder ball and Sn-7Zn-Al (30 ppm) solder paste in a lead-free wafer level chip scale package

The interfacial reactions of solder joints between the Sn-4Ag-0.5Cu solder ball and the Sn-7Zn-Al (30 ppm) presoldered paste were investigated in a wafer level chip scale package (WLCSP). After appropriate surface mount technology (SMT) reflow process on the printed circuit board (PCB) with organic solderability preservative (Cu/OSP) and Cu/Ni/Au surface finish, samples were subjected to 150°C high-temperature storage (HTS), 1,000 h aging. Sequentially, the cross-sectional analysis is scrutinized using a scanning electron microscope (SEM)/energy-dispersive spectrometer (EDS) and energy probe microanalysis (EPMA) to observe the metallurgical evolution in the interface and solder buck itself. It was found that Zn-enriched intermetallic compounds (IMCs) without Sn were formed and migrated from the presolder paste region into the solder after reflow and 150°C HTS test.     

Characterization of lead-free solders and under bump metallurgies for flip-chip package

A variety of Pb-free solders and under bump metallurgies (UBMs) was investigated for flip chip packaging applications. The result shows that the Sn-0.7Cu eutectic alloy has the best fatigue life and it possess the most desirable failure mechanism in both thermal and isothermal mechanical tests regardless of UBM type. Although the electroless Ni-P UBM has a much slower reaction rate with solders than the Cu UBM, room temperature mechanical fatigue is worse than on the Cu UBM when coupled with either Sn-3.8Ag-0.7Cu or Sn-3.5Ag solder. The Sn-37Pb solder consumes less Cu UBM than all other Pb-free solders during reflow. However, Sn-37Pb consumes more Cu after solid state annealing. Studies on aging, tensile, and shear mechanical properties show that the Sn-0.7Cu alloy is the most favorable Pb-free solder for flip chip applications. When coupled with underfill encapsulation in a direct chip attach (DCA) test device, the Sn-0.7Cu bump with Cu UBM exhibits a characteristic life or 5322 cycles under -55/spl deg/C/+150/spl deg/C air-to-air thermal cycling condition.     

热处理对96.5Sn3.5Ag焊点中Cu-Sn合金层的影响

在焊点与铜基之间形成的Ｃｕ－Ｓｎ合金成分对表面安装器件的疲劳寿命起着关键性的作用。本文着重研究了９３．５Ｓｎ３．５Ａｇ（简写为Ｓｎ－Ａｇ）焊料与Ｃｕ基界面间形成的合金层,通过电子扫描显微镜（ＳＥＭ）,Ｘ衍射（ＸＤＡ）及能谱Ｘ射线（ＥＤＸ）等分析发现,在Ｓｎ－Ａｇ与Ｃｕ基界面上存在Ｃｕ６Ｓｎ５及Ｃｕ３Ｓｎ两种合金成分,且随着热处理时间增加,Ｃｕ６Ｓｎ５合金层增厚,并在该处容易出现裂纹而导致焊点强度减弱,从而使焊点产生疲劳失效。     

A comparative study of the kinetics of interfacial reaction between eutectic solders and Cu/Ni/Pd metallization

A comparative study of the kinetics of interfacial reaction between the eutectic solders (Sn-3.5Ag, Sn-57Bi, and Sn-38Pb) and electroplated Ni/Pd on Cu substrate (Cu/Ni/NiPd/Ni/Pd) was performed. The interfacial microstructure was characterized by imaging and energy dispersive x-ray analysis in scanning electron microscope (SEM). For a Pd-layer thickness of less than 75 nm, the presence or the absence of Pd-bearing intermetallic was found to be dependent on the reaction temperature. In the case of Sn-3.5Ag solder, we did not observe any Pd-bearing intermetallic after reaction even at 230°C. In the case of Sn-57Bi solder the PdSn₄ intermetallic was observed after reaction at 150°C and 180°C, while in the case of Sn-38Pb solder the PdSn₄ intermetallic was observed after reaction only at 200°C. The PdSn₄ grains were always dispersed in the bulk solder within about 10 μm from the solder/substrate interface. At higher reaction temperatures, there was no Pd-bearing intermetallic due to increased solubility in the liquid solder. The presence or absence of Pd-bearing intermetallic was correlated with the diffusion path in the calculated Pd-Sn-X (X=Ag, Bi, Pb) isothermal sections. In the presence of unconsumed Ni, only Ni₃Sn₄ intermetallic was observed at the solder-substrate interface by SEM. The presence of Ni₃Sn₄ intermetallic was consistent with the expected diffusion path based on the calculated Ni-Sn-X (X=Ag, Bi, Pb) isothermal sections. Selective etching of solders revealed that Ni₃Sn₄ had a faceted scallop morphology. Both the radial growth and the thickening kinetics of Ni₃Sn₄ intermetallic were studied. In the thickness regime of 0.14 μm to 1.2 μm, the growth kinetics always yielded a time exponent n >3 for liquid-state reaction. The temporal law for coarsening also yielded time exponent m >3. The apparent activation energies for thickening were: 16936J/mol for the Sn-3.5Ag solder, 17804 J/mol for the Sn-57Bi solder, and 25749 J/mol for the Sn-38Pb solder during liquid-state reaction. The corresponding activation energies for coarsening were very similar. However, an apparent activation energy of 37599 J/mol was obtained for the growth of Ni₃Sn₄ intermetallic layer during solid-state aging of the Sn-57Bi/substrate diffusion couples. The kinetic parameters associated with thickening and radial growth were discussed in terms of current theories.     

Interfacial microstructure and strength of lead-free Sn-Zn-RE BGA solder bumps

Rare earth (RE) elements, primarily La and Ce, were doped in Sn-Zn solder to improve its properties such as wettability. The interfacial microstructure evolution and shear strength of the Sn-9Zn and Sn-9Zn-0.5RE (in wt%) solder bumps on Au/Ni/Cu under bump metallization (UBM) in a ball grid array (BGA) were investigated after thermal aging at 150 /spl deg/C for up to 1000 h. In the as-reflowed Sn-9Zn solder bump, AuSn/sub 4/ intermetallic compounds (IMCs) and Au-Zn circular IMCs formed close to the solder/UBM interface, together with the formation of a Ni-Zn-Sn ternary IMC layer of about 1 /spl mu/m in thickness. In contrast, in the as-reflowed Sn-9Zn-0.5RE solder bump, a spalled layer of Au-Zn was formed above the Ni layer. Sn-Ce-La and Sn-Zn-Ce-La phases were found near the interface at positions near the surface of the solder ball. Upon thermal aging at 150 /spl deg/C, the concentration of Zn in the Ni-Zn-Sn ternary layer of Sn-9Zn increased with aging time. For Sn-9Zn-0.5RE, the Au-Zn layer began to dissolve after 500 h of thermal aging. The shear strength of the Sn-9Zn ball was decreased after the addition of RE elements, although it was still higher than that of the Sn-37Pb and Sn-36Pb-2Ag Pb-bearing solders. The fracture mode of the Sn-9Zn system was changed from ductile to partly brittle after adding the RE elements. This is mainly due to the presence of the brittle Au-Zn layer.     

Evaluation of Electrochemical Migration on Printed Circuit Boards with Lead-Free and Tin-Lead Solder

To evaluate the current leakage and electrochemical migration behavior on printed circuit boards with eutectic tin-lead and lead-free solder, IPC B-24 comb structures were exposed to 65°C and 88% relative humidity conditions under direct-current (DC) bias for over 1500 h. These boards were processed with either Sn-3.0Ag-0.5Cu solder or Sn-37Pb solder. In addition to solder alloy, board finish (organic solderability preservative versus lead-free hot air solder leveling), spacing (25 mil versus 12.5 mil), and voltage (40 V versus 5 V bias) were also assessed by using in situ measurements of surface insulation resistance (SIR) and energy-dispersive spectroscopy after testing. It was shown that an initial increase of SIR was caused by consumption of electroactive species on the surface, intermittent drops of SIR were caused by dendritic growth, and a long-term SIR decline was caused by electrodeposition of a metallic layer. The prolonged SIR decline of Sn-3.0Ag-0.5Cu boards was simulated by three-dimensional (3D) progressive and instantaneous nucleation models, whose predictions were compared with experimental data. Sn-37Pb boards exhibited comigration of Sn, Pb, and Cu, while Sn-3.0Ag-0.5Cu boards incurred comigration of Sn, Ag, and Cu. Among the migrated species, Sn always dominated and was observed as either a layer or in polyhedral deposits, Pb was the most common element found in the dendrites, Cu was a minor constituent, and Ag migrated only occasionally. Compared with solder alloy, board finishes played a secondary role in affecting SIR due to their complexation with or dissolution into the solder. The competing effect between electric field and spacing was also investigated.