W-band finite ground coplanar monolithic multipliers

This paper describes the design, fabrication, and experimental evaluation of W-band planar monolithic varactor frequency multipliers based on finite ground coplanar (FGC) lines. These lines are a low-loss low-dispersion alternative of a planar transmission line to more conventional microstrip of coplanar waveguide lines at millimeter-wave frequencies. The near transverse-electromagnetic nature of propagation of the FGC lines simplifies circuit design and layout. Two-diode W-band varactor multipliers with input Q's of two and three and FGC input and output have been realized. The multiplier with input Q=2 has an output power of 72 mW, an efficiency of 16.3% near 80 GHz, and a -3-dB bandwidth greater than 10 GHz, while the multiplier with Q=3 has an efficiency of 21.5% near 70 GHz and a 6-GHz bandwidth. This paper briefly describes the characteristics of the FGC lines, the design of the multipliers and their radiofrequency performance     

Power-amplifier modules covering 70-113 GHz using MMICs

A set of W-band power amplifier (PA) modules using monolithic microwave integrated circuits (MMICs) have been developed for the local oscillators of the far-infrared and sub-millimeter telescope (FIRST). The MMIC PA chips include three driver and three PAs, designed using microstrip lines, and another two smaller driver amplifiers using coplanar waveguides, covering the entire W-band. The highest frequency PA, which covers 100-113 GHz, has a peak power of greater than 250 mW (25 dBm) at 105 GHz, which is the best output power performance for a monolithic amplifier above 100 GHz to date. These monolithic PA chips are fabricated using 0.1-μm AlGaAs/InGaAs/GaAs pseudomorphic T-gate power high electron-mobility transistors on a 2-mil GaAs substrate. The module assembly and testing, together with the system applications, is also addressed in this paper     

基于DSPSL 的电可重构平面带通滤波器

提出基于新型平衡传输线——双面平行带线(DSPSL)结构的电容加载电可重构平面带通滤波器,并以梳状线 和磁耦合谐振环带通滤波器为例验证该方案的可行性。相对于常见的微带线结构,双面平行带线具有对称性以及较高 的功率使用容量。这些特性使得滤波器在没有无限大金属地板的情况下,仍然获得了良好的性能。采用DSPSL 结构 进行微波电路设计不但可以减小电路的尺寸,同时还增加了电路设计的灵活性。     

Si-micromachined coplanar waveguides for use in high-frequencycircuits

This paper describes the development and characterization of a new class of Si-micromachined lines and circuit components for operation between 2-110 GHz. In these lines, which are a finite-ground coplanar-waveguide (FGC) type, Si micromachining is used to remove the dielectric material from the aperture regions in an effort to reduce dispersion and minimize propagation loss. Measured results have shown a considerable loss reduction to levels that compare favorably with those of membrane lines and rectangular waveguides. Micromachined FGC lines have been used to develop V- and W-band bandpass filters. The W-band micromachined FGC filter has shown a 0.8-dB improvement in insertion loss at 94 GHz over a conventional FGC line. This approach offers an excellent alternative to the membrane technology, exhibiting very low loss, no dispersion, and mode-free operation without using membranes to support the interconnect structure     

Effect of substrate dielectric anisotropy on the frequency behaviorof microstrip circuits

In this paper, we carry out a full-wave analysis of shielded two-port microstrip circuits, in which the metallizations are embedded in a multilayered substrate that may contain isotropic dielectrics and/or anisotropic dielectrics. The Galerkin's method in the spectral domain is applied for determining the current density on the metallizations of the circuits when their feeding lines are excited by means of delta-gap generators, and the matrix pencil technique is subsequently used for deembedding the scattering parameters from the computed current densities. Results are presented for the scattering parameters of some microstrip discontinuities and filters printed on both isotropic dielectric substrates and anisotropic dielectric substrates. These results show that when substrate dielectric anisotropy is ignored, errors arise when computing the scattering parameters of microstrip discontinuities and when predicting the operating frequency band of microstrip filters     

Parameters of Microstrip Transmission Lines and of Coupled Pairs of Microstrip Lines

A theoretical analysis is presented of microwave propagation on microstrip, with particular reference to the case of coupled pairs of microstrip lines. Data on this type of transmission line are needed for the design of directional couplers, filters, and other components in microwave integrated circuits. The inhomogeneous medium, consisting of the dielectric substrate and the vacuum above it, is treated in a rigorous manner through the use of a "dielectric Green's function" which expresses the discontinuity of the fields at the dielectric-vacuum interface. Results are presented in graphical form for substrate dielectric constants of 1, 9, and 16, and a range of values of width and spacing of the strips. Numerical tables for these and other cases are also available. The tables present capacitance, characteristic impedance, and velocity of propagation of the even and odd normal modes. The method lends itself to the treatment of other geometries which are of practical interest, such as "thick" strips, presence of an unsymmetrically located upper ground plane, etc.     

毫米波硅基微机械屏蔽膜微带线和滤波器

介绍了一种屏蔽膜微带线,该型传输线为介质薄膜所支撑,周围为空气,并为金属面所屏蔽,具有可忽略不计的衬底损耗及色散效应,以及很小的辐射损耗。运用HFSS三维电磁场仿真软件对毫米波屏蔽膜微带线与滤波器进行了仿真设计,运用MEMS工艺在两层高阻硅衬底上进行了样品的研制。样品取得了良好的测试结果,其中屏蔽膜微带线插入损耗小于0.1dB/mm。     

微带型回音壁模介质谐振器带阻方向滤波器

本文报道了使用新型平面回音壁模介质谐振器的微带型毫米波带阻、方向滤波器。全文用行波环谐振器的方法进行分析,并给出了Ka波段带阻、方向滤波器的实验研究,其结果表明,该谐振器特别适用于毫米波微带集成电路。     

Attenuation and dispersion for high-Tc superconductingmicrostrip lines

The attenuation and dispersion of microstrip lines of the high-T_c superconductor YBa₂Cu₃O₇ (YBCO) on yttria-stabilized zirconia substrates as a function of frequency and temperature are calculated. The effect on pulse propagation of superconducting and model dispersion in addition to the attenuation is demonstrated. At 60 K, microstrip lines of YBCO are significantly less attenuating at frequencies below 500 GHz than microstrip lines of copper at the same temperature. This advantage is particularly significant at the higher attenuations that result as the substrate thickness is made smaller for miniaturization or to improve the microstrip line bandwidth. The application of YBCO for microstrip lines appears to be most useful at frequencies above 100 GHz and dielectric thicknesses less than 100 μm, where the attenuation of cooled copper is prohibitively large. Cooled to temperatures below 20 K, YBCO may make possible a new generation of extremely high bandwidth (~5 THz), small-feature-size (~5 μm) circuits and devices     

Microwave Bandstop Filters Using Novel Artificial Periodic Substrate Electromagnetic Band Gap Structures

Novel microwave and millimeterwave (mm-wave) bandstop filters using artificial periodic substrate electromagnetic bandgap (EBG) are investigated in this paper. Three types of microstrip structures using periodically modified trace width, patterned dielectric substrate, and periodically modified ground plane are treated, respectively. By periodically modifying either the width of the conductor trace, the substrate height, or the dielectric constant of a standard microstrip transmission line, it has been possible to design microwave bandstop filter functions with wide stopband characteristics and reduced size, compared to conventional microwave/RF filter structures. Commercial electronic design automation (EDA) and computational electromagnetic tools such as Agilent's advanced design system (ADS) and CST Microwave Studio are used in the design and simulations of these filter structures. The effects of the physical parameters of the structures on the filter characteristic are studied. The design procedure and simulation results are described and possible applications of these filter structures are discussed in this paper. A particularly wide stopband is achieved by the circuits presented in this paper, which use only a few cell elements. A significant performance improvement of microstrip patch antenna has been observed by implementing one of the presented EBG periodic substrate structures.      

Design and performance of millimeter-wave end-coupled bandpass filters

The design and performance of millimeter-wave microstrip/suspended-stripline end-coupled bandpass filters are presented. Filters in Ka-band (26.5 to 40 GHz) and W-band (75 to 110 GHz) using suspended-stripline and microstrip have been designed. Good agreement between the experimental results and those predicted theoretically was observed. Measured passband insertion losses of less than 1 and 0.5 dB have been achieved in W- and Ka-band, respectively. An extremely wideband waveguide-to-microstrip transition with an insertion loss of 0.25 dB over the full W-band is also presented.     

Substrate integrated waveguide (SIW) asymmetric dual-mode filter and diplexer

Substrate integrated waveguide (SIW) can be used to implement high Q waveguide components with the same easy and low-cost fabrication process as planar circuits. In this paper two inline three-pole dual-mode filters with asymmetric transmission response based on SIW are presented. These two filters, consisting of a TE₁₀₂-TE₃₀₁ dual-mode SIW cavity and a TE₁₀₁ mode SIW cavity, are centred at around 10?GHz with a transmission zero on the left of the passband and the right of the passband, respectively. Based on the two kinds of three-pole deal-mode filters, a diplexer with isolation better than 35?dB is developed. A linear microstrip taper is used to implement the transition between microstrip and SIW. The measured results agree with simulated results.     

Embedded microstrip interconnection lines for gigahertz digitalcircuits

Transmission line structures are needed for the high-performance interconnection lines of GHz integrated circuits (ICs) and multichip modules (MCMs), to minimize undesired electromagnetic wave phenomena and, therefore, to maximize the transmission bandwidth of the interconnection lines. In addition, correct and simple models of the interconnection lines are required for the efficient design and analysis of the circuits containing the interconnection lines. In this paper, we present electrical comparisons of three transmission line structures: conventional metal-insulator-semiconductor (MIS) and the embedded microstrip structures-embedded microstrip (EM) and inverted embedded microstrip (IEM). In addition, we propose closed-form expressions for the embedded microstrip structures EM and IEM and validate the expressions by comparing with empirical results based on S-parameter measurements and subsequent microwave network analysis. Test devices were fabricated using a 1-poly and 3-metal 0.6 μm Si process. The test devices contained the conventional MIS and the two embedded microstrip structures of different sizes. The embedded microstrip structures were shown to carry GHz digital signals with less loss and less dispersion than the conventional MIS line structures. S-parameter measurements of the test devices showed that the embedded microstrip structures could support the quasi-TEM mode propagation at frequencies above 2 GHz. On the other hand, the conventional MIS structure showed slow-wave mode propagation up to 20 GHz. More than 3-dB/mm difference of signal attenuation was observed between the embedded microstrip structures and the conventional MIS structure at 20 GHz. Finally, analytical RLCG transmission line models were developed and shown to agree well with the empirical models deduced from S-parameter measurements     

A WH/GSMT-based full-wave analysis for planar transmission linesembedded in multilayered dielectric substrates

A new full-wave analysis method, referred to as the WH/GSMT, is developed to solve multilayered planar transmission line problems. First, the scattering of an obliquely incident parallel plate mode (PPM) by a PEC half plane embedded in a multilayered isotropic dielectric substrate within a PEC parallel plate region is analyzed via the Wiener-Hopf (WH) technique. The solution is then incorporated into the generalized scattering matrix technique (GSMT) to find the (complex) propagation constant and characteristic impedance of the planar transmission lines. The lateral power leakage is taken into account rigorously in the WH/GSMT. Numerical results including the microstrip line, conductor-backed slotline, coupled microstrip lines, and antipodal finlines are presented along with a discussion of the advantages/disadvantages of this method     

High-performance 450-GHz GaAs-based heterostructure barrier varactor tripler

In this letter, we report on the record performance of GaAs-based heterostructure barrier varactors (HBVs) in tripler circuits. Both fabrication technique of planar Al/sub 0.7/Ga/sub 0.3/As/GaAs heterostructure barrier varactors (HBVs) and measurements of a corresponding tripler circuit are presented. Planar transmission lines on a thin dielectric membrane and flip-chip technique without air bridges provide reduced parasitic losses and, hence, higher tripler efficiency. Frequency tripler measurements have shown more than 1 mW at 450 GHz.     

适用于Ka波段圆形电子注行波管的半圆形卷绕微带线慢波结构

提出了一种基于开槽介质基底的卷绕微带线慢波结构.由于金属曲折微带线印制在介质基底的半圆形槽中,这种卷绕微带线慢波结构非常适合圆形电子注行波管,从而使得采用这种新型慢波结构的行波管可以利用传统的周期永磁磁场进行聚焦.文章对提出的卷绕微带线慢波结构的色散特性,耦合阻抗,传输特性及注-波互作用进行了分析.和传统的平面微带线慢波结构相比,提出的卷绕微带线慢波结构具有更低的相速、更弱的色散和更高的耦合阻抗,从而使得其适合于低电压、宽频带、小型化的毫米波行波管.将同步电压及直流电流分别设置为6 550 V及0.1 A的情况下,基于该卷绕微带线慢波结构的Ka波段行波管在35 GHz处能够输出42.32 W的功率,对应增益为26.26 dB,且均匀聚焦磁场只需0.4 T.     

W波段宽带SIW背腔缝隙天线

W波段（75~110 GHz）的电磁波大气吸收率低、波长短、可用频带宽,在雷达、通信等领域应用广泛.文章设计了一种W波段基片集成波导（substrate integrated waveguide,SIW）背腔缝隙天线,-10 dB的阻抗带宽达到28.6%（78.93~105.24 GHz）,覆盖了W波段75%的频带范围.天线采用双层基片结构.上层为SIW谐振腔及四条辐射缝隙构成的谐振辐射单元,谐振腔内同时存在TM₁₃₀与TM₃₁₀混合模、TM₃₂₀模以及TM₃₃₀模三种高次模,和辐射缝隙一起形成多谐特性,实现带宽拓展;底层为通过耦合缝隙馈电的集成波导,易于扩展成平面网络,构建高增益背腔缝隙天线阵列.该天线频带宽、交叉极化低、剖面低、易于与平面微波电路集成、加工成本低,具有良好的应用前景.     

Modeling of Multilayer Suspended Microstrip Line and its Discontinuities on CMOS Grade Silicon Substrate for Millimeter Wave Integrated Circuit Applications

Transmission line parameters such as characteristic impedance Z₀, effective dielectric constant ε_eff, attenuation constant α of suspended microstrip line on multilayer low resistively silicon substrate are investigated using full wave FEM simulator HFSS. Effect of variation in the thickness of Si₃N_4, polyimide and metal layers on attenuation are studied. Due to suspended nature, significant reduction in transmission loss is observed in the simulation at 60 GHz frequency. Discontinuities such as open end, gap and step in width of strip conductor are analyzed to extract their lumped equivalent circuits which can be used in the design of integrated circuits.     

New multilayer planar transmission lines for microwave andmillimeter-wave integrated circuits

New types of planar transmission lines employing multilayer structures are proposed for possible applications in microwave and millimeter-wave integrated circuits. Detailed investigations are presented through numerical results calculated using the spectral domain technique. The newly proposed transmission lines have many attractive features such as a large impedance range, flexibility and ability to realize complicated, densely packed integrated circuits, as well as miniaturization through the use of thin dielectric layers. Additionally, they possess all of the inherent advantages of the CPW and microstrip line. Their use in microwave circuits is exemplified through a low-pass filter realized using the new slot-coplanar lines with less than 0.5-dB insertion loss and better than 20-dB return loss. The filter's measured and calculated performances also agree well     

Rectangular resonators in inverted microstrip and suspended microstrip

Resonant frequency characteristics of rectangular resonators in a generalized shielded suspended substrate line are analysed using a rigorous spectral domain technique. The computed dominant mode resonant frequency of rectangular resonators in a suspended microstrip with centred dielectric, inverted microstrip and suspended microstrip are presented as a function of various structural parameters. These characteristics are distinct from those obtained for a conventional microstrip rectangular resonator. Experiments are carried out in the frequency range 4-18 GHz to verify the computed resonant frequencies for a suspended microstrip with a centred dielectric using first-order basis functions. The results should find applications in the design of inverted microstrip and suspended microstrip passive microwave and millimetre wave integrated circuits.