一种温度自补偿的高灵敏度光纤光栅应变传感器

针对光纤光栅(FBG)应变传感器对应变和温度同时 敏感的问题,基于FBG传感原理以及环形结构受力变形特点,提出了 一种圆环式的FBG应变传感器,并进行了理论分析和传感器性能实验。传感器的 敏感结构是圆环,通过将 光栅粘贴在圆环竖向和横向直径方向,实现对被监测对象表面的应变监测。实验结果表明, 传感器的应变灵敏度为 3.76pm/με,线性相关度可达0.999 9,且 温度影响几乎被消除,可适用于受温度影响和精度要求较高的场所,尤其是 冶金铸造起重机的 监测。     

基于空芯光子晶体光纤的在线法-珀标准件制作与应用

基于空芯光子晶体光纤(HCPCF)的在线法-珀标准件(ILFE)应变传感器的应变灵敏度高,对温度敏感系数小,其腔长可制作得比传统ILFE长,适于在一路光路中进行频分复用从而扩大多点应变检测的准分布应变传感系统的容量。理论分析了制作中提高基于空芯光子晶体光纤的在线法-珀应变传感器输出信号的方案,通过实例讨论了光源时间相干长度对该类法-珀腔腔长的限制。结合波分频分复用,进行了基于该复用方法的应变测试实验研究,实验结果表明,其测量精度可达±5με,可用于大型结构健康监测。     

碳纤维强化聚合物封装的FBG传感器制备与特性试验

采用碳纤维强化聚合物(CFRP)对光纤Bragg光栅(FBG)进行封装,研制出用于测量混凝土内部应变的FBG应变传感器,分析了传感器轴向应变分布与结构参数的关系.通过在等强度梁和霍普金森压杆(SHPB)上的试验,得到了FBG传感器的静态性能指标和动态响应特性,结果表明,FBG应变传感器线性度≤1%,埋入混凝土结构内的F...     

基于光纤光栅的双壁开口模型管桩测试技术研究

针对光纤光栅传感器在模型管 桩试验应用情况, 提出了一种光纤光栅传感器理论灵敏度系数和实验灵敏度系数应变标定方法。结合理论分析 ,在封装FBG 应变传感器前,对模型管桩内、外管进行有限元Abaqus应力分布模拟分析,得到双壁开口模 型管桩对封装 FBG应变传感器没有影响,提高了实验应变测量精度。对模型管桩封装后的FBG应变传感器进 行标定实验, 每次按200逐级加载后并卸载,循环加载5次,得到内外管FBG传感器 应变灵敏度系数分别为2.15 pm/με、2.24 p m/με,且线性度 均达到0.999以上。该方法简单、易操作,可用于光纤光栅应变传感 器在模型管桩试验前的标定,为光纤光栅传感器在试验和工程中应用奠定了基础。     

基于光纤光栅的沥青路面状态的实时监测

为了给沥青路面结构响应监测找到科学有效的测 试手段,本文进行了沥青路面响应光纤Bragg光栅(FBG)实时监测 的研究。应用单轴压缩试验对采用的FBG传感器进行标定,得到了标定方程。基于提 出的沥青路面 FBG传感器埋设方法,在沥青路面成功埋设了FBG传感器。将静载监测结果与BISAR 3.0程序 计算结果进 行了比较。对不同轴重、不同汽车行驶速度及不同温度条件下的沥青路面结构动力响应进行 了实时监测。结果 表明,提出的沥青路面FBG传感器埋设方案可使传感器的成活率达到87%;静载实测结果与 计算结果较为接近,FBG监测结果有效且能准确反映沥青路面各工况下的应变时程;当车速 降低8km/h时,路面应变响应降低达100με以上;而路面温度增 长8℃,路面的竖向变形增长了近200με。     

一种拉杆式的光纤光栅应变传感器

提出了一种拉杆式的光纤光栅应变传感器,并进行了理论分析和传感器标定实验研究。传感器由悬臂梁组成弹性系统,将光纤粘贴于悬臂梁内锥形孔内,利用拉杆传递监测对象表面应变变化。实验结果表明,传感器的应变灵敏度为1pm/με,线性度为0.994;温度灵敏度为16pm/℃,线性度为0.996。可应用于高精度要求下的应变测量。     

表面焊接式光纤布喇格光栅应变传感器的疲劳性能研究

针对用于起重机械结构健康监测的光纤布喇格光栅(FBG)应变传感器疲劳性能未知问题,采用动态载荷与静态拉伸相结合的试验方法,对起重机械钢结构疲劳损伤监测中的3种封装形式FBG应变传感器开展了疲劳性能研究,分析了反映传感器性能的灵敏度系数、带宽、边摸抑制比、峰谷比、零点波长、动态应变分别随疲劳次数增加时的变化情况。试验结果表明:3种封装方式的FBG应变传感器疲劳前后,在加载、卸载相同载荷时,灵敏度系数相差最大不超过0.1 pm/με,带宽均值为0.19~0.23 nm,峰谷比和边摸抑制比随疲劳次数的增加变化趋势相同,零点波长变化最大值为0.31 nm,动态应变符合二次指数函数分布特征。     

后固化对树脂传递模塑成型复合材料性能影响监测

研制了双光纤Bragg光栅(FBG)温度/应变传感器,监测二次后固化对树脂传递模塑(RTM)成型复合材料的应变自由温度、玻璃化转变温度、残余应变及热膨胀系数的影响规律,并分析模具材料对热膨胀系数的影响。实验结果表明,二次后固化后,复合材料应变自由温度和玻璃化转变温度分别从189.0℃、189.4℃增加到200.2℃、204.0℃;外层残余应变从-597.7με下降至-671.5με;外层复合材料热膨胀系数从5.248×10-6/℃下降为4.275×10-6/℃,说明后固化可显著提高复合材料性能。     

基于FBG的钻孔应变传感器研制

为了监测地壳内部的微应力应变,设计了一种基 于光纤布拉格光栅(FBG)的钻孔应变传感器。结合FBG的传感原理,通过有限元分析 ,构建出曲边三角形的 传感应变结构,并根据其传感特点进行相应的封装。使用参考光栅法,在应变片上粘贴两支 FBG,在一支 FBG测量应变的同时另一支FBG对其进行温度补偿,解决了FBG对温度和应变同时敏感的 问题。为了模拟传感 器在 钻孔中的环境,建立了微应变测试平台。实验结果表明,研制的钻孔应变传感 器的灵敏 度为0.092pm/με,且具有较大的增敏空间。     

基于EFPI和FBG传感器的光纤智能夹层系统研究

以光纤自诊断系统为研究对象,围绕光纤智能夹层(FOSL)制作和标定中的相关理论及技术展开较深入的研究。采用聚酰亚胺薄膜制作了基于非本征法布里-珀罗干涉型(EFPI)传感器和光纤布拉格光栅(FBG)传感器的FOSL。制作过程中,光纤传感器性能完好,FOSL的埋入对复合材料强度影响较小。在此基础上,对FOSL试件中的EFPI和FBG传感器进行了四点弯曲试验。试验表明,FOSL中,EFPI传感器的应变与载荷、FBG波长偏移与应变之间均具有良好的线性关系;在FOSL的制作中,可以选用EFPI和FBG传感器同时监测结构应变和温度。利用FOSL中的光纤传感器网络和先进信息处理技术,可以建立结构损伤主动、在线和实时监测系统。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.