基于MEMS技术的红外成像焦平面阵列

选用Au和LPCVD的低应力SiNx薄膜材料,采用MEMS技术研制了新型间隔镀金热隔离结构的薄膜镂空式非制冷红外成像焦平面阵列,并应用光学读出的方法成功地在室温(27.47℃)背景下获得了人体的热像.实验证明间隔镀金热隔离结构的引入有效抑制了热传导对变形梁温升的限制,从而大大降低了系统的噪声等效温度差(NETD),NETD达到约200mK.     

二极管型红外焦平面阵列的噪声分析及结构优化设计

二极管非制冷红外焦平面阵列(IRFPA)探测器具有广阔的前景,然而它的性能受噪声源的制约,为了得到高性能的探测器,必须研究噪声源并减小其影响。概述了探测器噪声源,量化并研究了不同噪声对探测器的影响,最后得到了二极管IRFPA的性能极限,此外,计算得到了最优的结构参数。理论研究表明温度起伏噪声对应的最小噪声等效温差(NETD)为2.36K,此时探测器热导为辐射热导,其值为2.06nW/K。当单元尺寸为25μm×25μm的探测器的正向偏置电流为33μA,占空比为54%时可得到最优NETD为46.5mK。     

非制冷MEMS红外成像系统

利用光力学效应设计研制了非制冷MEMS红外焦平面阵列及图像探测系统,提出并制作了新型间隔镀金的、无Si衬底的非制冷MEMS红外成像焦平面阵列,分析了FPA热响应时间、NETD、像元的一致性等问题,与光学检测系统共同组成红外成像系统,成功得到了室温背景下人体的热像.     

焦平面热像仪NETD参数的自动测量

设计了一种用于红外焦平面热像仪NETD参数自动测量的算法,也论述相关的红外目标自动检测算法,并给出了系统硬件的设计与实现。该系统对焦平面热像仪输出的模拟视频数据进行A /D采样,通过CPLD和USB2. 0高速总线把图像数据传回PC,在PC上对方孔目标进行自动检测并计算NETD。     

红外焦平面阵列无效像元检测技术研究

提出了一种基于噪声等效温差(NETD)和灰度最小方差的红外焦平面阵列无效像元检测方法.无效像元包括过热像元和死像元.首先利用三维噪声模型建立图像数据集,然后分别判断过热像元和死像元.通过像元的噪声电压值与10倍NETD的比较来实现过热像元的判别;对于死像元的判别处理是,设计了9个不同的窗口,分别计算每个窗口的方差并选取方差最小的窗口,最后通过比较窗口中心像元灰度与均值灰度的差值是否落在3倍方差内作为评判死像元的标准.最后通过实验证明,该方法具有误判率较小,定位准确率高等特点.     

优化非致冷红外探测器设计的理论模型

文章建立了一种改进非致冷红外探测器性能的数学模型，分析了探测器结构和噪声对于噪声等效温差NETD的影响，并给出了NETD与探测器温度TD，背景温度下TB，热导G以及探测单元面积A等因素的关系曲线，指出了探测器性能改进和优化的途径。     

热成像系统噪声等效温差测试算法及工程应用

针对热成像系统噪声等效温差的检测需求,基于三维噪声模型阐述了热成像系统噪声的4个时间分量、3个空间分量,分析了噪声常规计算方法.在此基础上,提出了一种基于标准差的简便算法,提高检测效率.进行了测试系统工程化设计,阐述了NETD指标的计算方法和测试流程.开展了实验研究,对两种三维噪声测试算法进行了验证与分析,与进口设备进行了对比测试.结果表明,本测试系统NETD指标检测重复性好、准确度高,应用于多型热成像设备性能检测,满足工程化保障需求.     

通用红外测试系统的精度分析

采用美国PI、Santa Barbara红外和Lumitron的红外测试设备,进行系统集成,构建成了通用的红外测试系统.它既能完成1 024×1 024元以下任意像元数的中波红外和长波红外焦平面阵列性能参数的测试,又能完成中波红外和长波红外热像仪系统级性能参数的测试,具有很好的适用性及技术的先进性.中波红外热像仪的测试结果NETD=15.8 mK,与CEDIP的结果15.13 mK相差0.67 mK.测试精度为±1.49 mK.长波制冷红外焦平面阵列探测器的测试结果NETD为26.47 mK,与Sofradir的结果24.43 mK相差2.04 mK,测试精度为±1.63 mK.     

非制冷微测辐射热计探测器工作温度特性研究

根据非制冷红外热成像技术的基本原理,通过对α-Si微测辐射热计探测器响应性能及功耗特性的分析,得到了探测器噪声等效温差NETD、探测率及功耗与工作温度之间的关系.提出了在环境温度变化范围较大的情况下改善探测器低温环境工作性能的方法——采用多个工作温度点.并对探测器采用0℃和30℃双工作温度点工作进行了实验,实验结果表明,该方法切实有效,可以显著扩展非制冷微侧辐射热计探测器的环境温度适用范围.     

红外焦平面阵列多次采样滤波技术

针对红外图像信噪比不高和当前常用的二维时间延迟积分(2D-TDI)算法仅适用于静止和缓慢运动目标场合的问题,分析了信号的采集原理以及噪声特性,提出了红外焦平面阵列(IRFPA)多次采样滤波技术,通过对一帧图像的同一像元点进行多次采样的方法,在降低红外图像的随机时间域噪声的同时,保证其能够应用于快速运动目标场合;图像对比和数据测试结果表明:红外焦平面阵列多次采样滤波技术不仅具有与2D-TDI算法同等的提高红外图像信噪比的能力--将红外图像的NETD降低到原红外图像的1/√n倍(n为对同一像元点的有效采样次数),而且突破了2D-TDI算法应用场合的限制,其能够适应于快速运动目标场景,对红外热像仪的性能提升有重要意义.     

VOLTE容灾机制研究及优化方案

_{本文首先对VOLTE现网网络结构及容灾机制进行研究分析,发现现存容灾机制中存在的缺点和不确定性,针对其中的问题,针对性地进行了深入研究和分析,创新的提出了1种快速容灾抢通方案,以达到提升VOLTE业务运维能力和用户业务感知的目的。}     

Calculation of energy band gaps in quaternary iii/v alloys

The dielectric theory of electronegativity is applied to the calculation of the compositional dependence of the energy band gap for quaternary III/V alloys of type A_l-xB_xC_1-yD_y and A_1-x-yB_xC_yD. The departure from linearity of E_G versus x and y is taken to be the sum of two terms, the intrinsic or virtual crystal term and the extrinsic term due to effects of aperiodicity which for one type of alloy may occur on both sublattices. Rather than simply treating the quaternary as an average of the bounding ternary systems, as has been common in the past, the intrinsic departure from linearity is calculated by assuming E_h,i,C, and D_av to vary linearly with x and y. The result is a smaller intrinsic deviation from linearity and a much better fit to existing data in the system Ga_1-xIn_xAs_1-y P_y. The calculation is also applied to three systems where no data exist but which are of great interest because of their potential application for the fabrication of lattice matched tandem solar cells: Ga_l-xA1_xAs_l-ySb_y. Ga_1-x-yA1_xIn_yAs, and GaAs_1-x-yP_xSb_y.     

新形势下河北移动全业务支撑策略研究

随着铁塔公司的成立及国家在“宽带中国”“提速降费”等一系列通信领域的重大战略实施,全业务运营越来越成为河北移动保持领先,实现卓越的重要支点。基于此河北移动启动大规模综合业务区建设,由传统传输网围绕基站建设转向全业务支撑。河北移动将综合业务区建设与全业务机房的选取统筹安排,建设综合业务区与全业务机房的联络光缆,将综合业务区光缆网成为承载重要集客数据专线和4G拉远站的载体,合理、有序、迅速实现“一张光缆网”的建设,鼎力支撑全业务及4G的发展。     

Nickel silicidation techniques for strained Si1?xGex, Si1?x?yGexCy, and Si1?yCy alloys material-device applications

A nickel silicide process for Si_1-xGe_x, Si_1-x-yGe_xC_y, and Si_1-yC_y alloy materials compatible with Si technology has been developed. Low-resistivity-phase (12–20 μΘ cm) nickel silicides have been obtained for these alloys with different low sheet-resistance temperature windows. The study shows that thin (15–18 nm) silicide layers with high crystalline quality, smooth silicide surface, and smooth interface between silicide and the underlying material are achievable. The technique could be used to combine the benefits of Ni silicide and Si_1-xGe_x, Si_1-x-yGe_xC_y, and Si_1-yC_y alloys. The technique is promising for Si or Si_1-xGe_x, Si_1-x-yGe_xC_y, and Si_1-yC_y alloy-based metal-oxide semiconductor, field-effect transistors (MOSFETs) or other device applications.     

Low pressure metalorganic chemical vapor deposition of InP and related compounds

The low pressure metalorganic chemical vapor deposition epitaxial growth and characterization of InP, Ga_0.47In_0.53 As and Ga_xIn_1-xAs_yP_1-y, lattice-matched to InP substrate are described. The layers were found to have the same etch pit density (EPD) as the substrate. The best mobility obtained for InP was 5300 cm² V⁻¹S⁻¹ at 300 K and 58 900 cm² V⁻¹ S⁻¹ at 77₂K, and for GaInAs was 11900 cm² V⁻¹ S⁻¹ at 300 K, 54 600 cm² V⁻¹ S⁻¹ at 77 K and 90 000 cm V⁻¹S⁻¹ at 2°K. We report the first successful growth of a GaInAs-InP superlattice and the enhanced mobility of a two dimensional electron gas at a GaInAs -InP heterojunction grown by LP-MO CVD. LP MO CVD material has been used for GaInAsPInP, DH lasers emitting at 1.3 um and 1.5 um. These devices exhibit a low threshold current, a slightly higher than liquid phase epitaxy devices and a high differential quantum efficiency of 60%. Fundamental transverse mode oscillation has been achieved up to a power outpout of 10 mW. Threshold currents as low as 200 mA dc have been measured for devices with a stripe width of 9 um and a cavity length of 300 um for emission at 1.5 um. Values of T in the range 64–80 C have been obtained. Preliminary life testing has been carried out at room temperature on a few laser diodes (λ = 1.5μm). Operation at constant current for severalthousand hours has been achieved with no change in the threshold current.     

Characterization of a rapid thermal anneal TiNxOy/TiSi2 contact barrier

In this paper, the physical and electrical properties of a TiN_xO_y/TiSi₂ dual layer contact barrier are reported. The TiN_xO_y/TiSi₂ barrier was formed by rapidly annealing a Ti thin film on Si in an N₂ ambient. During this process, the Ti film surface reacts with N₂ to form a TiN_xO_y skin layer and the bulk of the Ti film reacts with Si to form an underlying TiSi₂ layer. The influences of rapid thermal anneal (RTA) conditions on the TiN_xO_y layer were investigated by varying the RTA temperature from 600 to 1100° C and cycle duration from 30 to 100 s. It is found that the resulting TiN_xO_y and TiSi₂ layer thicknesses are dependent on RTA temperature and the starting Ti thickness. For a starting Ti thickness of 500Å, 150Å thick TiN_xO_y and 800Å thick TiSi₂ are obtained after an RTA at 900° C for 30 s. The TiN_xO_y thickness is limited by a fast diffusion of Si into Ti to form TiSi₂. When a Ti film is deposited on SiO₂, Ti starts to react with SiO₂ from 600° C and a significant reduction of the SiO₂ thickness is observed after an RTA at 900° C. The resulting layer is composed of a surface TiN_xO_y layer followed by a complex layer of titanium oxide and titanium suicide. In addition, when Ti is depos-ited on TiSi₂, thicker TiN_xO_y and TiSi₂ layers are obtained after RTA. This is because the TiSi₂ layer retards the diffusion of Si from the underlying substrate into the Ti layer. NMOSFETs were fabricated using the TiN_xO_y/TiSi₂ as a contact barrier formed by RTA at 900° C for 30 s and a significant reduction of contact resistance was obtained. In addition, electromigration test at a high current density indicated that a significant improvement in mean time to failure (MTF) has been obtained with the barrier.     

Processing of large YBa2 Cu3Ox domains for levitation applications by a Nd1+x Ba2−x Cu3 Oy-Seeded melt-growth technique

YBa₂Cu₃O_x domains for levitation applications have been produced by a seeding technology that includes Nd_1+x Ba_2−x Cu₃O_y seeds and melt-processing technologies such as conventional melt-textured growth, melt-texturing with PtO₂ and Y₂BaCuO₅ additions, and the new solid-liquid-melt-growth technology. Large domains (∼20 mm) with high levitation forces (F₁ up to 8.2 N) have been produced. The reproducibility of the results is good, and the capability of producing a large number of pellets in a single batch indicates good potential for the production of large amounts of this material.     

Transport properties of thermoelectric materials for coolers

The Seebeck coefficient, thermal conductivity, electrical conductivity and Hall coefficient of cooler grade, p-and n-type ternary alloys of Bi₂Te₃-Sb₂Te₃-Sb₂Se₃ were measured between 10 and 300 K. Between 300 K and about 150 K the temperature dependence of the transport properties can be explained by assuming nondegeneracy and a lattice scattering mechanism. The difference between the temperature dependence of the Hall effect in n-and p-type alloys can be explained by the presence of sub-bands of light and heavy holes in the valence band of p-type alloys.     

基于InP衬底的晶格失配In0.68Ga0.32As的MOCVD生长及其特性研究

采用MOCVD生长技术在InP衬底上成功实现了晶格失配的3μm In0.68 Ga0.32As薄膜生长.通过As组分的改变,利用张应变和压应变交替补偿的InAsxP1-x应变缓冲层结构来释放由于晶格失配所产生的应力,在InP衬底上得到了与In0.68Ga0.32 As晶格匹配的InAsxP1-x“虚拟”衬底,通过对缓冲层厚度的优化,使应力能够在“虚拟”衬底上完全豫弛.通过原子力显微镜(AFM)、高分辨XRD、透射电镜(TEM)和光致发光(PL)等测试分析表明,这种释放应力的方法能够有效提高In0.68 Ga0.32 As外延层的晶体质量.     

The effect of Tl2Te3 on the properties of the solid solution (Sb2Te3)0.75.(Bi2Te3)0.25

The effect on transport properties of the addition of 0.5-5% Tl₂Te₃ to p-type solid solutions of antimony and bismuth tellurides was studied. It was found that the addition of Tl₂Te₃ caused a lessening of the increase of hole concentration as low temperatures were approached, resulting in a slower decrease of the Seebeck coefficient with a decrease in temperature. In partial fulfillment of M.Sc. degree, Hebrew University, Jerusalem. Permanent address, Dept. of Inorganic and Analytical Chemistry, Hebrew University, Jerusalem.