小型化T 隔板多层基片集成波导滤波器设计

基于LTCC 工艺设计并制作了一种多层T 隔板基片集成波导(TSSIW)滤波器。该滤波器以TSSIW 谐振腔为基础,利用其灵活的同层与异层的耦合方式实现四阶交叉耦合结构,并节省60% 以上的电路面积。实验结果显示滤波器中心频率为9. 4 GHz,工作带宽为500 MHz,通带最小插入损耗小于2. 5 dB,回波损耗优于15 dB,表明该滤波器具有体积小、易于集成的特点,同时保持了TSSIW 优秀的频率选择性和寄生响应。     

Electrical characterization and reliability study of integrated GaN power amplifier in multi-layer thin-film technology

In this work, the degradation of a GaN power amplifier (PA) integrated in a thin film multi-chip module (MCM-D) interconnect technology is investigated by means of DC and RF measurements. Failure analysis has demonstrated that improper thermal contact may cause the PA module performance degradation. Moreover, we have experimentally studied the thermal effects on the RF performance of MCM-D and low-temperature co-fired ceramic (LTCC) PAs. It shows that the device exhibits a higher output power density on a thinned MCM-D substrate than on an LTCC substrate with thermal vias, and also that the output power density can be further improved by reducing the heat spread distance between active devices and heat sink.     

LTCC-Based Highly Integrated Millimeter-Wave Receiver Front-End Module

This paper presents the design and fabrication of a highly integrated Low Temperature Co-fired Ceramic (LTCC) receiver front-end module. This LTCC module is a dual channel receiver module, works at Ka-band, and fabricated including six Ferro A6M dielectric layers and five metal layers, contains eight embedded resistors and eight MMICs. All MMICs are mounted into pre-making cavities on the top surface of the LTCC substrate. Three slot coupled waveguide-to-microstrip transitions are integrated at LTCC substrate to realize RF and LO signal input. The developed module is highly integrated and reliable, which has a compact size of 58 × 50 × 22 mm³ (including the metal cavity). Each channel of the receiver has the noise figure of less than 9 dB and the gain of more than 24 dB at Ka-band.     

LTCC基开关驱动低噪放一体化模块设计

基于LTCC技术设计了一款双通道应用的开关、驱动和低噪放一体化模块,利用HFSS对无源器件电感进行仿真,将电感嵌入LTCC基板中,不仅提高了模块的集成度,同时也降低了成本。在1.8~2.1 GHz频段内,ANT-RX通道增益达到23.8 dB,输入驻波比小于1.49,输出驻波比小于1.33,通道隔离大于44 dB,噪声系数小于1.21 dB(含评估板单端损耗约为0.15 dB);ANT-TX通道插入损耗小于0.42 dB(含评估版损耗约0.3 dB),输入输出驻波比均小于1.1。     

C波段LTCC高频前端模块的研究与实现

针对现有雷达高频接收组件尺寸大、集成度不高的情况,采用低温共烧陶瓷(LTCC)多层基板、单片微波集成电路(MMIC)芯片和微组装技术,设计和实现了C波段LTCC高频前端模块。该模块采用二次混频方案,包含限幅器、放大器、滤波器、衰减器、混频器等;其中主要器件用MMIC芯片实现,滤波器埋置在LTCC多层基板中实现,极大减小了模块的尺寸,模块最终尺寸为64 mm×20 mm×1.1 mm,比现有的接收组件尺寸减小了50%。经测试,该LTCC高频前端模块的增益大于40 dB,带内平坦度小于2 dB,噪声系数小于5 dB,镜像抑制度优于51 dB。可将高频前端模块应用于雷达高频接收组件中,从而减小组件尺寸。     

Integrated interconnect networks for RF switch matrix applications

In this paper, two new types of integrated RF interconnect networks are presented. The circuits are printed on double-sided alumina substrates, eliminating the need to use multilayer manufacturing technology. The interconnect networks employ finite ground coplanar lines and vertical transitions and can be easily integrated with semiconductor and microelectromechanical-systems switches. A wide-band 3/spl times/3 interconnect network utilizing single and double three-via vertical transitions is investigated theoretically and experimentally. The measured results show a return loss of -20dB and an isolation of better than -40dB up to 30 GHz. A vialess double-sided interconnect network is also studied and optimized for satellite Ku-band applications. This type of interconnect network uses a process requiring only front and back pattern metallization. The measured results indicate a return loss of better than -17dB and an isolation of better than -45dB.     

一种新型集成化X波段低噪声放大器

低温共烧陶瓷 (LTCC)和倒装芯片 (FC)是实现小型化、高可靠微波组件的一种理想的组装和互连技术。文中对带有埋置式电阻的 LTCC微波多层互连基板和倒装芯片组装技术进行了研究 ,以研制出体积小、重量轻、微波性能好的高密度集成化 X波段低噪声放大器。利用商用三维电磁场分析软件 HFSS对集成化低噪声放大器组装和互连中的关键参数进行了仿真和优化。研制出的集成化 X波段低噪声放大器带宽为 1 .6GHz,增益≥ 2 8d B,噪声系数≤ 2 d B,输入 /输出驻波≤ 1 .8,体积仅为 1 2 mm× 6mm× 1 .5 mm。     

一种基于LTCC 技术的脊基片集成波导（SIW）到微带的过渡结构

介绍了一种基于LTCC 技术的脊基片集成波导（SIW）到微带的过渡结构。将传统脊波导到微带过渡的设计思路,运用于基于LTCC 技术的基片集成波导（SIW）到Rogers5880 基片微带的过渡设计中,实现了LTCC SIW 到Rogers5880 基片微带的宽带过渡。从仿真结果可以看出,在25.2GHz 到40GHz 的频带内,回波损耗S11 小于-15dB, 插入损耗优于-0.2dB。     

A compact LTCC-based Ku-band transmitter module

Presents design, implementation, and measurement of a three-dimensional (3-D)-deployed RF front-end system-on-package (SOP) in a standard multi-layer low temperature co-fired ceramic (LTCC) technology. A compact 14 GHz GaAs MESFET-based transmitter module integrated with an embedded bandpass filter was built on LTCC 951AT tapes. The up-converter MMIC integrated with a voltage controlled oscillator (VCO) exhibits a measured up-conversion gain of 15 dB and an IIP3 of 15 dBm, while the power amplifier (PA) MMIC shows a measured gain of 31 dB and a 1-dB compression output power of 26 dBm at 14 GHz. Both MMICs were integrated on a compact LTCC module where an embedded front-end band pass filter (BPF) with a measured insertion loss of 3 dB at 14.25 GHz was integrated. The transmitter module is compact in size (400 /spl times/ 310 /spl times/ 35.2 mil/sup 3/), however it demonstrated an overall up-conversion gain of 41 dB, and available data rate of 32 Mbps with adjacent channel power ratio (ACPR) of 42 dB. These results suggest the feasibility of building highly SOP integrated RF front ends for microwave and millimeter wave applications.     

用于微波组件的LTCC 3 dB耦合器

低温共烧陶瓷(LTCC)技术是实现机载、星载、舰载相控阵雷达小型化、轻量化、高性能、高可靠、低成本的有效手段。文中论述了LTCC技术在微波集成器件应用中所具有的技术优势,并介绍了用于微波组件的LTCC 3dB耦合器的构成、关键制造工艺技术以及性能参数等,为LTCC技术在微波集成器件中的应用进行了有益的探索。