ALA光动力学治疗对C6胶质瘤细胞凋亡的影响

目的:通过细胞学水平研究不同剂量ALA光动力学治疗对C6胶质瘤细胞细胞凋亡的影响。方法:以不同剂量的ALA(10μg/ml、20μg/ml、40μg/ml、80μg/ml、160μg/ml)与C6胶质瘤细胞一起培养,随后以630nm半导体激光200mW/cm2,照射肿瘤细胞,照射20分钟,及与不用光敏剂单照激光、单用光敏剂不照光、不用光敏剂不照激光空白对照组比较。以流式细胞仪及倒置微镜、电镜观察促使肿瘤细胞凋亡或死亡的差别,寻找促使肿瘤细胞凋亡或死亡的最小合适剂量。结果:对照组没有细胞凋亡,ALA-PDT组随着剂量的增加细胞凋亡数增加。尤其晚期凋亡数明显增加,用药剂量增加至40μg/cc才能达到活细胞少于50%,即使剂量增加到160μg/cc,还是有19.7423的活细胞存在。结论:单纯用ALA激光PDT治疗不能达到完全将肿瘤细胞杀灭,ALA40mg/kg激光光动力学治疗才能得到明显的治疗效果。     

ALA联合HPD光动力学治疗鼠S180肉瘤研究

目的通过鼠肿瘤动物模型确定ALA配合小剂量HPD激光光动力疗法促使肿细胞死亡及凋亡的疗效及光敏药物最佳用药剂量。方法以不同剂量的ALA口服(20μg/ml、40μg/ml、60μg/ml)、HPD2.5μg/ml静脉注射、24小时后,以630nm半导体激光250mW/cm2照射,每光斑照射20分钟剂量,照光前及照光后不同时间以肉眼、肿瘤大小测定、病理、电镜、流式细胞仪观察单纯ALA-PDT、HPD-PDT、二者配合的疗效差别并与未作光动力学治疗的空白对照组模型作比较,寻找最佳的光敏药物配合的剂量。结果ALA20-40μg/ml口服配合HPD2.5μg/ml静脉注射作半导体630nm激光250mW/cm2照射20分钟组光动力学治疗组,从形态学观察,肿瘤大小测定、病理、电镜、流式细胞仪观察是能达到较佳的肿瘤坏死变性、细胞凋亡、肿瘤消失的最小用光敏剂剂量。结论ALA20-40mg/kg配合HPD2.5mg/kg,630半导体激光250mW/cm2,照射20分钟是能到小鼠S180肉瘤肿瘤模型光动力学治疗最佳疗效的最小光敏剂剂量。     

ALA联合HPD光动力学治疗对C6胶质瘤细胞影响的研究

目的通过细胞学水平研究确定ALA配合小剂量HPD激光光动力疗法促使肿细胞凋亡及死亡的光敏药用药剂量及与两者单独使用的差别.方法以不同剂量的ALA(20μg/ml、40μg/ml、60μg/ ml、80μg/ ml、160μg/ ml)、HPD(1μg/ml、2μg/ml、3μg/ml、4μg/ml、5μg/ml)、两者联合与C6胶质瘤瘤细胞一起培养,随后以630nm半导体激光200mW/cm2,照射肿瘤细胞,照射20分钟,及与不用光敏剂单照激光、单用光敏剂不照光、不用光敏剂不照激光空白对照组比较.以流式细胞仪及倒置显微镜、电镜观察促使肿瘤细胞凋亡或死亡的差别,寻找促使肿瘤细胞凋亡或死亡的最小合适剂量.结果ALA40μg/ml配合HPD2.5μg/ml与C6胶质瘤细胞同时培养,630半导体激光200mW/cm2,照射20分钟组从倒置显微镜及电镜形态学观察及流式细胞仪测定是能达到较佳的细胞凋亡的最小光敏剂剂量.单纯ALA-PDT组中能达到小鼠C6胶质瘤细胞明显凋亡的最小剂量是ALA(80μg/ml),单纯HPD-PDT组中能达到小鼠C6胶质瘤细胞明显凋亡最小剂量是HPD(5μg/ml).结论ALA40mg/kg配合HPD2.5mg/kg,630半导体激光200mW/cm2,照射20分钟是能达到小鼠C6胶质瘤细胞明显凋亡的最小光敏剂剂量.     

ALA联合HPD光动力学治疗对鼠G422胶质瘤影响的研究

目的:通过鼠G422胶质瘤研究确定ALA联合小剂量HPD激光光动力疗法促使肿瘤细胞凋亡及死亡的光敏药用药剂量及与两者单独使用的差别.方法:以不同剂量的HPD(1、2、3、4、5 mg/kg)、ALA(20、40、60、80、160 mg/kg)、两者联合口服与静脉注射鼠G422脑胶质瘤瘤模型,随后以630nm半导体激光200mW/cm2 照射肿瘤.照射20分钟,及与不用光敏剂单照激光、单用光敏剂不照光、不用光敏剂不照激光空向对照组比较.以流式细胞仪、电镜观察促使肿瘤细胞凋亡或死亡的差别,病理,肿瘤生长曲线观察治疗肿瘤,促使肿瘤细胞凋亡及死亡的最小合适剂量.结果:HPDl-2mg/kg联合ALA40-60 mg/kg给药,630半导体激光200mW/cm.,照射20分钟组,从流式细胞仪测定细胞凋亡、死亡及电镜、病理及肿瘤生长曲线形态学观察,其是能达到较佳的细胞凋亡、死亡的最小、合适的光敏剂剂量.单纯ALA-PDT组中能达到鼠G422胶质瘤细胞明显凋亡的最小剂量是ALA(80-160mg/kg),单纯HPD-PDT组是HPD4-5mg/kg.结论:HPDI一2mg/kg配合ALA40-60mg/kg,630半导体激光200mW/cm2,照射20分钟是能达到鼠G422胶质瘤细胞明显凋亡死亡,治疗肿瘤合适的最小光敏剂剂量.     

ALA联合HPD光动力学治疗鼠G422脑胶质细胞肿瘤基因P16及P53变化的研究

目的:研究ALA、HPD及ALA联合HPD光动力学治疗鼠G422脑胶质细胞瘤肿瘤基因P16及P53表达的变化.方法:以不同剂量ALA(20mg/kg、40 mg/kg、60 mg/kg、80 mg/kg、160 mg/kg)、HPD(1 mg/kg、2 mg/kg、3 mg/kg、4 mg/kg、5mg/kg)及不同剂量组合ALA联合HPD光动力学治疗鼠G422脑胶质细胞肿瘤以波长630nm半导体激光照射,功率密度200mW/cm2,每光斑照射20分钟,PDT后一天、三天、七天及十四天,以流式细胞仪测试各组基因P16、P53不同光敏剂组及不同时间表达的变化并与不照光对照组比较.结果:本实验中未作PDT治疗的对照组肿瘤,肿瘤生长快,P16对照组最低值12.01%.最高值15.41%,HPD-PDT组表达最低值17.12%,最高值34.735%,ALA-PDT组.表达最低值17.1%,最高值25.51%,而HPD与ALA联合治疗组表达最低值16.5%,最高值28.22%;P53对照组最低值15.02%,最高值23.16%.HPD-PDT组,表达最低值29.98%,最高值43.62%.ALA-PDT组,表达最低值25.06%,最高值33.25%,而HPD与ALA联合治疗组表达最低值28.08%,最高值41.01%.总的P16、P53光动力学治疗组表达明显高于对照组,随光敏剂剂量增加表达值渐增,HPD-PDT组表达高于ALA组,HPDlmg/kg联合、ALA60-80mg/kg,HPD2mg/kg联合ALA40-60mg/kg,HPD3-4mg/kg联合ALA20mg/kg能达到P16表达最佳值及最高值.PDT后七天表达较佳.结论:推测PDT疗法激活了P16基因及p53基因功能,促使肿瘤细胞凋亡及坏死.联合疗法HPDlmg/kg联合ALA60-80mg/kg,HPD2mg/kg联合ALA40-60mg/kg光动力学治疗表达是最佳值或最高值,这样可明显提高ALA-PDT疗效及减少HPD-PDT的皮肤光毒反应.     

ALA联合HPD光动力学治疗对S180腹水瘤细胞的影响的研究

目的 :通过细胞学水平研究确定ALA配合小剂量HPD激光光动力疗法促使肿细胞死亡及凋亡的光敏药用药剂量及与二者单独使用的差别方法 :以不同剂量的ALA(40 μg/ml、80 μg/ml、16 0 μg/ml)、HPD(2 .5 μg/ml、5 μg/ml、10 μg/ml)、二者联合与S180腹水瘤细胞一起培养 ,随后以 6 30nm半导体激光 2 0 0mW /cm2 ,照射肿瘤细胞 ,照射 2 0分钟 ,及与不用光敏剂单照激光、单用光敏剂不照光、不用光敏剂不照激光空白对照组比较。以流式细胞仪及倒置微镜观察促使肿瘤细胞凋亡或死亡的差别 ,寻找促使肿瘤细胞凋亡或死亡的最小合适剂量。结果 :ALA4 0 μg/ml配合HPD2 .5 μg/ml与S180腹水瘤细胞同时培养 ,6 30半导体激光 2 0 0mW /cm2 ,照射 2 0分钟组从形态学观察及流式细胞仪测定是能达到较佳的细胞凋亡的最小用光敏剂剂量。单纯ALA -PDT组中能达到小鼠S180腹水瘤细胞明显凋亡的最小剂量是ALA(80 μg/ml) ,单纯HPD -PDT组中能达到小鼠S180腹水瘤细胞明显凋亡最小剂量是HPD(5 μg/ml)。结论 :ALA4 0mg/kg配合HPD2 .5mg/kg ,6 30半导体激光2 0 0mW /cm2 ,照射 2 0分钟是能达到小鼠S180腹水瘤细胞明显凋亡的最小光敏剂剂量。     

ALA联合HPD光动力学治疗对C6胶质瘤细胞细胞内钙离子变化的研究

目的:研究ALA、HPD及ALA联合HPD光动力学治疗对C6胶质瘤细胞细胞内钙离子变化,方法:以不同剂量ALA(20μg/ml、40μg/ml、60μg/ml、80μg/ml、160μg/ml)、HPD(1μg/ml、2μg/ml、3pg/ml、4μg/ml、5μg/ml)及不同剂量组合ALA联合HPD光动力学治疗C6胶质瘤细胞,应用Fluo-3AM为细胞内钙离子荧光指示剂,以激光共聚焦显微镜测定对照组及光动力学组照光后培养24小时活细胞细胞内钙离子含量,及测定单激光及对照组、光动力学治疗组照光前36秒及照光20分钟至停照光后20-100分钟细胞内钙离子浓度的动态变化,每12秒测定一次.结果:空白对照组、单激光、单加光敏剂组活C6胶质瘤细胞显示钙离子荧光值,在120分钟内变化较小.而光动力学治疗组,初照光5-15分钟内荧光明显慢慢增强,以后就逐渐下降,光敏药剂量大的初5-10分钟内荧光亮度上升很快,以后下降也快,可下降为0,剂量越大变化越明显,且光敏剂ALA较HPD更明显.二光敏剂联合组以上反应更明显,HPDl-2μg/ml联合ALA40-60μg/ml与HPD 5μg/ml组动态图相似.结论:通过本实验可推测光动力学作用后细胞内钙离子超载可能在细胞凋亡及死亡中发挥重要作用.二光敏剂联合可提高疗效,降低HPD光敏剂用量,减少皮肤光毒付反应,HPDl-2μg/ml联合ALA40-60μg/ml是较合适的剂量.     

ALA联合HPD光动力学治疗鼠G422胶质瘤肿瘤细胞内钙离子变化的研究

目的:研究ALA、HPD及ALA联合HPD光动力学治疗鼠G422胶质瘤肿瘤细胞内钙离子变化.方法:以不同剂量ALA(20、40、60、80、160mg/kg、)、HPD(1、2、3、4,5mg/kg)及不同剂量组合ALA联合HPD光动力学治疗鼠G422胶质瘤肿瘤,应用Fluo-3AM为细胞内钙离子荧光指示剂,以激光共聚焦显微镜测定对照组及光动力学组照光后立即、一天、三天肿瘤活细胞细胞内钙离子含量,并同时测定单激光、单用光敏剂、及空白对照组鼠肿瘤细胞内钙离子表达.结果:空白对照组、单激光、单加光敏剂组鼠G422胶质瘤肿瘤显示3天内钙离子荧光值维持在较恒定值,光动力组在治疗后立即组可见钙离子值明显高于未作光动力学治疗的对照组,且与光敏剂剂量增加有关.光动力学治疗后一天及三天组肿瘤细胞内钙离子值明显低于立即组及未作光动力学治疗组.且与光敏剂剂量增加有关.ALA-PDT组较HPD-PDT组更明显.联合治疗组HPD1-2mg/kg联合LA40-60mg/kg光动力学治疗组肿瘤细胞内钙离子值接近HPD 5mg/kg光动力学治疗组.结论:通过本实验可推测光动力学作用后细胞内钙离子超载可能在细胞凋亡及死亡中发挥重要作用.二光敏剂联合可提高疗效,降低HPD光敏剂用量,减少皮肤光毒副反应,HPD1-2 mg/kg联合ALA40-60 mg/kg是较合适的剂量.     

5-氨基酮戊酸-光动力疗法治疗豚鼠银屑病模型的实验研究

目的:研究5-氨基酮戊酸光动力疗法(ALA-PDT)治疗豚鼠耳背部寻常型银屑病模型的可行性和作用机制.方法:采用20%ALA溶液局部封包豚鼠耳背部银屑病模型皮损4h,再用635nm半导体激光照射,能量密度12J/cm2.分设模型对照组、单纯照光组、单纯ALA组、一次ALA-PDT治疗组、二次ALA-PDT治疗组,治疗后于第7d、14d、21d、28d进行组织病理学和增殖细胞核抗原免疫组化观察疗效.结果:ALA-PDT能够治愈豚鼠耳背部寻常型银屑病模型的病变;二次ALA-PDT治疗组疗效优于一次ALA-PDT治疗组;结论:ALA-PDT疗法能抑制豚鼠耳背部寻常型银屑病模型的表皮细胞异常增殖,并能消除局部组织炎性反应,其疗效与治疗次数正相关.     

光动力疗法中最佳光动力治疗剂量的研究

为了研究光动力过程中光剂量和光敏剂剂量对光动力损伤效果的影响,基于肿瘤组织中光动力损伤剂量的数学模型以及光动力损伤剂量与组织中光剂量、光敏剂剂量、氧浓度之间的函数关系,用数学方法模拟研究了给定模型组织中光及光敏剂的有效吸收剂量与氧浓度之间的关系,并用ALA-PDT实验研究了k562细胞悬浮液中不同药物剂量对光动力损伤效果的影响.研究发现,光动力过程中光剂量与光敏剂浓度存在一个最佳治疗剂量,其大小和组织中氧浓度有关,组织中越缺氧,最佳光动力剂量越小,光动力过程对组织的损伤越小,通过实验发现k562细胞悬浮液中最佳剂量为20×0.25(J/cm2·mmol/L),此时光动力损伤效果最明显.研究结果表明了PDT对肿瘤组织具有选择性光动力损伤的特点,并为PDT在临床上的广泛应用提供了理论支持.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and sub-pixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.