Pt100温度传感器非线性的补偿方法与电路实现

针对铂电阻(Pt100)温度传感器输出的非线性问题,结合其非线性的具体特点和船舶装备的实际使用要求,提出了一种补偿其非线性的方法,即通过动态调整流过铂电阻的激励电流,来补偿由于铂电阻随温度升高阻值增加率减小而引起的非线性,并设计了专用的非线性补偿电路.在对电路补偿原理及效果进行理论分析和计算机模拟仿真的基础上,实际制作了该非线性补偿电路,并进行了现场测试,结果表明在0~650℃的温度范围内,电路输出的非线性误差不超过0.12%.目前以本电路为核心的温度测量与控制系统已实际应用于某海军船舶装备.     

基于铂电阻的宽量程高精度温度测量装置

-30-300℃是科学研究和工业生产最常用的温度范围,在此范围内进行高精度温度测量一直是研究的热点问题。本文研究了一种新的以铂电阻Pt100为温度传感器,采用分段和比例原理的高分辨率、高精度温度测量方法。根据本文研究的方法所设计的温度测量系统具有体积小、精度高等特点,不但可以用于工业生产和科学研究过程中的高精度温度测量,也可作为可传递的计量标准。     

基于Pt100运用查表法实现的高温温度计设计

针对高温温度计存在体积大、成本高、操作复杂及实际测量依赖电脑而不能独立工作等缺点,研究了温度数据的采集、传输、显示等问题,设计出以STC89C52为核心,基于Pt100温度传感器和液晶1602显示的铂电阻高温温度计。该温度计的测量范围从-200～＋500℃,精度为1℃。实验表明,该高温温度计具有测温范围广、性能稳定、工...     

航空发动机温度传感器检定仪的设计与仿真

某型航空发动机采用铂电阻(PT100)对发动机滑油系统进行温度检测,并且当滑油温度超过警戒值时向飞行员紧急报警;目前由于缺乏温度传感器检定装置,从而无法保证装机的温度传感器的质量.通过采用单片机技术,对温度传感器检定仪进行硬件设计,在此基础上应用Keil C51软件进行仪器的程序设计,之后在Pro-teus软件环境下完成了仪器功能的仿真实验.仿真结果表明,所设计的温度传感器检定仪的检测精度为0.1℃,可以有效地对温度传感器的好坏进行检定.     

应用单片机实现现场非接触温度测量控制技术

<正> 传统的现场温度测量和控制领域一般需要将传感器(如Pt100铂电阻)直接接触到测量物体,而对于测量旋转体或移动物体等的温度,传感器无法直接接触,对于这些需要非接触测量的场合,一般可采用红外测量或常规测量加无线或红外信号传输方式。红外测量有操作简便的好处,只要是红外测温技术对于测量物体的相对温度有较高的精度,如工业生产现场或医疗方面可用光谱测量仪器;对于测量物体的绝对温度,测量精度不高,并需要对不同的物体调节辉度系数。要想提高测量精度,需要配置高精度的测量设备,这样的设备价格较贵;常规测量加无线或红外信号传输方式是用得较多的方法。由于是非接触测量,常规测量获得的信号需要通过无线或红外传输。其中红外传输抗电磁干扰能力较强。在这里我们介绍一种利用单片机技术处理铂电阻温度信号并通过红外传输方     

用Pt100组成的温度测量电路

温度传感器Pt100具有测温范围大,温度系数小和线性好的特点。图1为一个由恒流源、传感器Pt100(0℃时的R_Q为100Ω)和反相放大器组成的温度测量电路。它与通常用的惠斯顿电桥和差分放大器组成的电路(图2)相比,具有电路简单、成本低和误差小的特点。图2所示电路中,带有Pt100的电桥电路位于     

高精度铂电阻温度测量新方法

铂电阻是工业测控系统中广泛使用的理想测温元件.常规的温度采集方法是通过测量电阻桥的不平衡电压来实现,其性能依赖于选取的模数转换器精度,高精度测量成本过高.提出一种新的高精度,低成本的铂电阻测温方法.先用RC振荡器将铂电阻变化调制为时变频率信号,再用SSP1492芯片测量该频率变化量,最后送入C8051F021单片机,用高阶多项式完成频率变化到温度变化的解算,实现高精度温度测量.实验结果表明,该方法的测量精度等级高于0.03%(F.S.).     

基于压控电流源的铂电阻测温非线性校正设计

铂电阻因其高精度、高稳定性、可重复性以及可互换性的特点,作为温度传感器在工业领域以及航天领域被广泛应用。针对铂电阻的非线性特性,提出了一种基于压控电流源的铂电阻测温非线性校正设计方法。利用测量系统的输出值微调铂电阻的激励电流的方法,抵消非线性误差,提高输出信号的线性度,具有参数计算简单、电路实现方便的优点。该方法应用于某在轨辐射定标系统,进行了相应的电路设计,采集了实际实验数据。实测数据表明,采用该方法能在-40~70℃的范围内将由铂电阻温度传感器非线性产生的测量误差改善为约0.016℃,提高了温度测量精度。     

基于地震前兆监测的温度测量装置的研究

设计一款用于地下水体流动观测的地震前兆监测井温测量装置,测量探头机械封装部分使用铜质材料?采用三段式结构,分为上封头、主体筒和下封头,其中Pt100铂电阻温度传感器及其测量电路固定于主体筒内,测温电路采用差动电桥法,通过 STM32F101RBT6控制24位AD转换ADS1251进行数据采集,并通过RS-485进行信号传输, 上位机采用LABVIEW图形化编 程软件进行数据的读取和处理工作,该测量装置可测量最深1000ｍ 井温,测量精度优于0.05 ℃,长期测量稳定性高。     

地表温度测量方法研究综述

对近年来国内外测量地表温度的理论、方法和应用进行了全面的回顾,主要介绍了玻璃液体温度表、铂电阻地温传感器、红外温度传感器和红外辐射计的使用方法及优缺点.分析了它们测量地表温度的差异,指出了前两种仪表存在的不足,重点介绍了基于红外辐射原理的红外温度传感器和红外辐射计.实际应用表明：经过气象因子修正后的红外传感器和考虑了大气逆辐射影响的红外辐射计测量地表温度更加准确、可靠,是以后重点研究的方向.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.