光伏焦平面器件串音效应的检测图形测试法

根据长波红外焦平面器件研制的需要，在对器件串光效应和测试原理进行分析的基础上，本文首次提出用检测图形测试的方法测量红外焦平面阵列中探测器之间的串音效应。对用于检测光伏焦平面阵列光串音效应的检测图形的结构和原理，具体的测试设备和测试方法，以及由结构设计差异和检测管响应率差异可能引入的误差进行了讨论，并根据红外长波焦平面器件研制过程中的实际测试经验，给出了实用的误差消除方法。在长波ＨｇＣｄＴｅ焦平面阵列的实际研制过程中，该方法对工艺机理的分析和器件参数测试都起了重要的作用。此测试法所用测试设备与常规光电器件测试设备相同，避免了在串音测试上依赖于目前尚不成熟的红外长波小光点技术。     

可编程逻辑器件在红外焦平面阵列读出电路信号源中的应用

读出电路是红外焦平面器件研究的关键技术之一.文中首先介绍了可编程逻辑器件用于红外焦平面阵列读出电路信号源中的优点及红外焦平面读出电路信号源的特殊性,然后介绍了用于测试所研制的两种读出电路的信号源设计.     

128元线列锑化铟光伏混成型红外焦平面器件的研制及其热成象实验

１２８元线列锑化铟光伏混成型红外焦平面器件的研制及其热成象实验王新德，张勤耀，张月琴，张雪珍，胡文军，何震凯，刘松荷，梁平治（上海技术物理研究所上海２０００８３）本文描述了１２８元线列锑化铟光伏混成型红外焦平面器件是按应用要求设计的。该器件是由１２８...     

串音效应的检测图形测试法

串音效应的检测图形测试法曾戈虹（昆明物理研究所昆明６５０２２３）根据长波红外焦平面器件研制的需要和在对器件串光效应和测试原理进行分析的基础上，本文首次提出用检测图形测试的方法来测量红外焦平面阵列中探测器之间的串音效应，对用检测光伏焦平面阵列光串音效应...     

在Si和Ge衬底上用分子束外延生长HgCdTe

在当前大规模红外焦平面器件的研制中，高性能器件的制备需要高质量、大面积、组分均匀的碲镉汞材料。衬底和外延材料的晶格失配导致了大量的位错增殖，严重影响红外焦平面器件的工作性能。本文对各种衬底进行了比较，并对Si基和Ge基上的外延碲镉汞材料的生长工艺及性能进行了调研和评价。     

虚拟仪器在128×128热释电IRFPA联调及成像中的应用

本文介绍了128×128热释电红外焦平面阵列的联调及成像实验系统。虚拟仪器技术的应用,为非制冷红外焦平面成像器件的研制和开发提供了一种成本低、方便灵活的实验验证手段和方法。实验获取了清楚的红外热像,为热释电红外焦平面阵列的进一步研制和改进奠定了良好基础。     

红外焦平面器件读出电路技术

本文是一篇关于红外焦平面阵列器件的综述性文章。主要介绍了红外焦平面阵列器件的分类、定义、应用、组成部分、发展趋势，其中重点对红外焦平面器件读出电路技术作了详尽的论述。     

混合式红外焦平面用对焊机的研制

对焊工艺是制备混合红外焦平面器件的关键工艺。本文介绍了我们根据对焊工艺要求自行研制的 HDD-1型红外对焊机的原理、性能及测试方法,并给出了该机在红外焦平面列阵对焊工艺中的试用结果。     

碲镉汞线性雪崩焦平面器件评价及其应用(特邀)

碲镉汞线性雪崩焦平面探测器具有高增益、高带宽及低过剩噪声等特点,在航空航天、天文观测、军事装备及地质勘探等领域展现了巨大的应用潜力。目前,国内已经开展了碲镉汞线性雪崩焦平面器件的研制工作,但缺乏评价其性能的方法及标准,同时对其的应用仍然处于探索阶段。首先分析了表征线性雪崩焦平面器件性能的关键参数,同时基于碲镉汞线性雪崩焦平面器件的特点,探讨了雪崩焦平面器件在主/被动红外成像、快速红外成像等领域的应用,最后对碲镉汞雪崩焦平面器件的未来发展进行了展望。     

红外焦平面器件的信息获取电路技术

红外焦平面阵列器件是现代红外成像系统的关键器件，它包括红外探测器阵列和读出电路两部分。其信号获取电路是处理焦平面输出信号的部分，主要指与读出电路接口的放大电路。本文主要综合了红外焦平面器件的信息获取电路及其相关技术，并就其中的关键技术进行简要分析。     

Monolithically integrated HgCdTe focal plane arrays

The cost and performance of hybrid HgCdTe infrared (IR) focal plane arrays are constrained by the necessity of fabricating the detector arrays on a CdZnTe substrate. These substrates are expensive, fragile, available only in small rectangular formats, and are not a good thermal expansion match to the silicon readout integrated circuit. We discuss in this paper an IR sensor technology based on monolithically integrated IR focal plane arrays that could replace the conventional hybrid focal plane array technology. We have investigated the critical issues related to the growth of HgCdTe on Si read-out integrated circuits and the fabrication of monolithic focal plane arrays: (1) the design of Si read-out integrated circuits and focal plane array layouts; (2) the low-temperature cleaning of Si(001) wafers; (3) the growth of CdTe and HgCdTe layers on read-out integrated circuits; (4) diode creation, delineation, electrical, and interconnection; and (4) demonstration of high yield photovoltaic operation without limitation from earlier preprocessing such as substrate cleaning, molecular beam epitaxy (MBE) growth, and device fabrication. Crystallographic, optical, and electrical properties of the grown layers will be presented. Electrical properties for diodes fabricated on misoriented Si and readout integrated circuit (ROIC) substrates will be discussed. The fabrication of arrays with demonstrated I–V properties show that monolithic integration of HgCdTe-based IR focal plane arrays on Si read-out integrated circuits is feasible and could be implemented in the third generation of IR systems.     

Full Schottky high density 2-D infrared charge coupled detector array

Conventional silicon based infrared (IR) detector arrays consist of separate Schottky barrier detectors connected via transfer gates to MOS type charge coupled device (CCD) read-out shift registers. A novel IR imaging array is described where Scottky silicide elements are used exclusively both as IR detectors as well as the silicide gates of Schottky CCD read-out shift registers. Advantages of the novel structure are a high packing density of IR detectors with high fill factor, simplicity of the device layout and possible high fabrication yield.     

Integration of 256×256 Element Si Microlens Arrays with PtSi IR Detector Array Devices

Diffractive 11-phase-level Si microlens arrays are fabricated by a special method, i.e. part-etching. The method can increase focal length of diffractive microlens arrays. By using this method, the microlens arrays on the back side of the Si substrate and PtSi IR focal plane arrays(FPAs) on the front side of the same wafer are monolithically integrated together. The IR response characteristics of the integrated devices are improved greatly.     

Monolithic two-dimensional arrays of micromachined microstructuresfor infrared applications

Small micromachined structures (typically 10^-5 cm² ) have been fabricated that have very small thermal mass (c, about 10^-9 J/K) and that are suspended from the underlying silicon substrate by supports of such delicacy that the structures are extremely well thermally isolated from the substrate (thermal conductance to the substrate g of 10^-7 W/K). This thermal conductance is close to the smallest value possible (about 10^-8 W/K) due to radiative energy exchange. This high thermal isolation allows the microstructure temperature to be readily controlled by very small heating currents, or very small amount of infrared (IR) incident IR flux. Large arrays of such microstructures have been fabricated on silicon wafers, complete with complex integrated electronic circuits, and operated as (1) sensitive room-temperature IR sensors (“microbolometers”) for night-vision IR imaging and (2) large arrays of individually controllable IR microemitters. The latter provide dynamic infrared “scene generators” that allow realistic simulations of IR scenes, an important tool for the development of IR cameras and IR missile seekers     

Monolithic Integration of Diffractive Microlens Arrays and Infrared Focal Plane Arrays

Monolithic integration method has been demonstrated to increase the fill factor of the infrared focal plane arrays (IRFPA). Which is consists of 256×256 Pt-Si schottky barrier charge coupled devices(CCD) operation in 3-5μm IR region. The relative silicon 256×256 element diffractive microlens arrays have been fabricated on the back side of the substrate of the IRFPA using binary optics technology. The aligning process between IRFPA and microlens arrays on each side of the substrate has been completed by IR mask aligner. The testing results show that the imaging quality is very good and the average optical response of the IR FPA is increased by a factor of 3.0, which is improved by about 25% compared with the hybrid integration method in the previous work.     

InSb charge-injection device imaging array

InSb CID arrays, in both 1 × 32 line and 16 × 24 two-dimensional format, have been successfully fabricated via a multilayer MIS processing technique. With the 1 × 32 line arrays, two-dimensional images were generated using a scanning mirror and a computer signal-conditioning technique. In this experiment the small temperature difference of a man's face was revealed. Two-dimensional, 16 × 24 area arrays have also been demonstrated in a staring mode by displaying real time raster-scanned IR images directly on a X-Y CRT monitor. The unprocessed IR video signal produced a sharp, clearly recognizable display with no sign of blooming, and exhibited excellent operating characteristics. Theoretical analysis showed that, at low sample rates, background limited performance (BLIP) can be obtained at background photon flux levels of as low as mid-10¹²photons/s . cm². The dominant noise source, in this case, is the integrated dark current shot noise. For operation at high sample rates, however, the bandwidth-dependent noise sources limit the array performance and, thus, BLIP occurs at higher background levels. The analysis has been confirmed by measured data on line arrays, resulting in good agreement between the theoretical curve and the experimental data.     

InSb Charge-Injection Device Imaging Array

InSb CID arrays, in both 1 X 32 line and 16 X 24 two-dimensional format, have been successfully fabricated via a multilayer MIS processing technique. With the 1 X 32 line arrays, two-dimensional images were generated using a scanning mirror and a computer signal-conditioning technique. In this experiment the small temperature difference of a man's face was revealed. Two-dimensional, 16 X 24 area arrays have also been demonstrated in a staring mode by displaying real time raster-scanned IR images directly on a X - Y CRT monitor. The unprocessed IR video signal produced a sharp, clearly recognizable display with no sign of blooming, and exhibited excellent operating characteristics. Theoretical analysis showed that, at low sample rates, back-ground limited performance (BLIP) can be obtained at background photon flux levels of as low as mid-10/sup 12/ photons/s /spl dot/ cm/sup 2/. The dominant noise source, in this case, is the integrated dark current shot noise. For operation at high sample rates, however, the bandwidth dependent noise sources limit the array performance and, thus, BLIP occurs at higher background levels. The analysis has been confirmed by measured data on line arrays, resulting in good agreement between the theoretical curve and the experimental data.     

国外红外探测器的发展及其在制导武器中的应用

红外探测器是红外制导武器导引头的核心部件，它的发展深刻影响着红外制导武器的发展。本文介绍了国外械外探测器的发展概况，归纳了现有红外探测器的种类，简述了几种红外探测器采用材料以及它们在制导弹武器中应用，对红外焦平面阵列作了重点介绍。     

Characteristics of integrated QWIP-HBT-LED up-converter

In this paper, we evaluate characteristics of a novel device based on the integration of a quantum well IR photodetector (QWIP), a heterostructure bipolar transistor (HBT), and a light-emitting diode (LED) for up-conversion of middle infrared (IR) into near IR (visible) radiation. Its operation is associated with intersubband absorption of middle IR radiation in the QWIP, amplification of the QWIP output electric signal in the HBT, and emission of near IR or visible radiation from the LED fed by the current injected from the HBT. This device allows us to use Si sensors for IR and thermal imaging and significantly surpass the one based on integration of a QWIP and a LED. If the HBT current gain is high enough, the total noise of the IR camera with the up-converter can be comparable to that of the QWIP electrically connected to a read-out circuit. The major sources of the excess noise are shot noise and 1/f noise of the HBT and shot noise of the charge coupled device (CCD) sensor. The criteria to reduce their influence are established. The QWIP-HBT-LED up-converter becomes most advantageous for megapixel focal plane arrays and high read-out rate cameras.     

A 1-Mb/s IR LED array driver for office wireless communication

The design of the 1-Mbit/s driver for IR LED arrays enables a wireless IR link to accommodate several voice and data users. With the coming availability of new and economical IR LED devices and with special optical filtering it is estimated that IR LED switching rates will be approaching the 5-Mb/s range. An IR wireless link in an office would thus be enabled to handle video signals.