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《太赫兹科学与电子信息学报》2011,9(6):F0003-F0003
太赫兹科学技术是多学科交叉融合的前沿科学技术.正向深层次物理研究、器件研制以及应用系统研发等多方面迅速发展。为推动太赫兹科学技术研究,中国工程物理研究院成立了太赫兹科学技术研究中心(以下简 相似文献
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随着太赫兹(THz)科学技术的不断发展和应用水平的不断提高,科研、生产及应用领域都产生了对THz 计
量技术的迫切需求。论文梳理了美国国家标准与技术研究院、英国国家物理实验室、中国计量院等国内外主要计量机
构及其它科研机构在THz 参数计量技术方面的研究工作,从功率、频率、光谱参数以及脉冲参数等方面对THz 计量技
术的研究现状进行了综述,并对中国电子科技集团公司第四十一研究所在THz 计量领域的研究工作进行了介绍。最后,
对太赫兹计量技术的发展进行了展望。 相似文献
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太赫兹波探测技术的研究进展 总被引:1,自引:0,他引:1
太赫兹波具有优越的特性,使其在物理、化学、生物医学、天文学、材料科学和环境科学等方面有重要的学术和应用价值,以及对国民经济发展、国家安全、反恐和新一代信息科学技术有重大的推动作用,作为太赫兹技术应用的关键器件之一的太赫兹探测器同样到了迅猛的发展。文章介绍了太赫兹探测技术的原理及其应用,并在此基础上分析了太赫兹探测器的最新进展、性能和发展趋势。 相似文献
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太赫兹光电子学的兴起推动了太赫兹波产生、传输和探测3方面理论和器件的快速发展。通过调控亚波长金属结构与太赫兹波相互作用的特异光学响应,太赫兹超材料和超表面器件已在太赫兹光束整形、导波和调制方面显示了巨大的潜力和优势,并可能推动太赫兹光源和探测器的发展。进一步发展和丰富太赫兹超材料和超表面器件,也将对太赫兹波在传感、通信和雷达等应用方面产生有益影响。本文综述了首都师范大学超材料与器件课题组近年来在太赫兹波段开展的基于超材料和超表面材料的光谱调制器件、光场调制衍射光学元件和主动光学元件的工作,介绍了超材料与器件的基本物理理论以及相应的实验研究成果,希望能够推动超材料与超表面太赫兹调制器件的发展与应用。 相似文献
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太赫兹技术在基础研究、工业以及军事领域有着良好的应用前景和研究价值,而太赫兹源在很大程度上决定了太赫兹技术的应用前景和发展潜力。由于光电导材料的研究发展,光电导太赫兹源目前已成为产生宽频带太赫兹辐射的一种重要方法,也是所有太赫兹相关技术中研究非常活跃的一个领域。本文就光电导太赫兹源的原理、性能影响因素、国内外研究情况作了较为全面的评述,着重阐述了基底材料、电极几何结构和激发光源对于其性能的影响以及国内外研究现状,并对其中存在的问题和解决思路等进行分析,展望了未来研究发展方向。 相似文献
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金属或半导体与介质分界面上的电子与光子互作用形成的光学表面等离激元(SPP)以及人工超构材料或二维原子晶体材料表面上的电子与太赫兹波或微波互作用形成的人工表面等离激元(SSP)是小型化与集成化太赫兹有源/无源器件和太赫兹超分辨率成像的重要物理基础。随着太赫兹科学技术的发展,太赫兹表面等离激元研究在国际上受到很大关注。本文介绍了传统的光学表面等离激元及其发展,详细阐述了太赫兹波段的人工表面等离激元(SSP)和石墨烯表面等离激元(GSP)的基本原理和发展历程,对表面等离激元在太赫兹波段的新型辐射源、无源器件、超分辨率成像及其他领域的应用进行了较为全面的总结和评述,并对该领域未来进一步发展的方向进行了展望。 相似文献
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The optimum noise figures of an m.o.s.f.e.t. at u.h.f. and at pinch-off are calculated using a simplified equivalent circuit. The noise parameters are also determined experimentally. Theory and experiment are shown to be in good agreement. Noise parameters of the m.o.s.f.e.t. for the frequency range 0.1?0.8 GHz are given. 相似文献
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N-channel silicon m.o.s. transistors for h.f. power applications have been fabricated which are optimised for linear amplification. These devices exhibit 2 W output power and 11 dB power gain at 630 MHz in class-A operation. The intercept point for third-order intermodulation distortion is 48dBm, which is considerably more than the same data obtainable with bipolar transistors. 相似文献
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Low-noise amplifiers for u.h.f. colour t.v. broadcasting translator use have been successfully developed by using 1 ?m gate GaAs m.e.s.f.e.t.s. The obtained performances revealed that a GaAs m.e.s.f.e.t. has low-noise and low intermodulation distortion characteristics, even in the 500?800 MHz frequency range, compared with a Si bipolar transistor. 相似文献
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An experimental study of the low-frequency-noise properties of n-channel epitaxial silicon films on insulator m.o.s. s.o.s. transistors has been performed. The measurements show an excessive noise contribution at drain voltages corresponding to the current-kink effect for temperatures ranging from 4.2 to 300 K. 相似文献
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Switching has been observed in metal?thin-insulator?n-p+ structures, where the thin insulator is SiO2, or polycrystalline silicon. In this letter two alternative structures are discussed in which the n-p+ junction is replaced by a Schottky barrier. In the second device proposed two thin-insulator structures back-to-back are shown to exhibit bidirectional switching. 相似文献
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A new non-volatile memory device is reported. This device is a GaAs m.o.s.f.e.t. with charge storage in the gate in which is a double oxide structure of aluminium oxide and GaAs native oxide, both oxides are grown anodically. The fabrication of the device is described and the results of initial measurements on the charging and charge retention properties are presented. 相似文献
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A new monolithic current-controlled oscillator (c.c.o.) has been realised in a j.f.e.t.-bipolar technology. Its main advantages are a highly-linear seven decade frequency range and easy temperature compensation for frequency and output voltage. 相似文献
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High-efficiency c.w. amplification with GaAs m.e.s.f.e.t.s under class-B conditions has been demonstrated. Power added efficiencies as high as 68% at 4 GHz and 41% at 8 GHz have been achieved. Two-tone tests were carried out at 4 GHz. The power added efficiencies at the 3rd-order intermodulation levels of ?20, ?25 and ?30 dB were 49, 40 and 35% respectively. 相似文献
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Hewitt B.S. Cox H.M. Fukui H. Dilorenzo J.V. Schlosser W.O. Iglesias D.E. 《Electronics letters》1976,12(12):309-310
GaAs m.e.s.f.e.t.s with optimum noise figures of 1.6 dB at 6 GHz have been fabricated by projection photolithography. An equation has been developed for the calculation of optimum noise figure which gives good agreement between calculated and measured values. 相似文献
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By using plasma c.v.d. and lift-off, an n-channel m.o.s.f.e.t. with effective channel length of 0.4 ?m has been fabricated. Its main fabrication processes and obtained electrical characteristics are described. 相似文献