脉冲激光沉积制备Ge纳米薄膜的研究

利用脉冲激光沉积(PLD)技术,在Ar环境下于Si基片上制备出Ge纳米薄膜.用X射线衍射(XRD)仪和原子力显微镜(AFM)观测了薄膜的微观结构和形貌,分析了它们随激光能量密度和衬底温度的变化情况.结果表明:Ge薄膜在室温下即可以结晶,其平均品粒尺寸随脉冲激光能量密度的增大而增大.当脉冲激光能量密度为0.94 J/cm2时,所制备的薄膜由约13 nm的颗粒组成;当脉冲激光能量密度增大为1.31 J/cm2时,颗粒的平均尺寸增大为56 nm,凡薄膜表面变得比较均匀.此外,当衬底温度从室温升到450℃过程中,晶粒平均尺寸随温度升高而增大.在实验基础上,对薄膜的生长机理进行了分析.     

脉冲激光制备ZnO压敏电阻薄膜

利用脉冲激光沉积技术，在光学玻璃基片上制备了性能良好的ＺｎＯ压敏多晶薄膜，其非线性系数ａ≥６，压敏转折电压约３．５Ｖ。     

垂直靶向脉冲激光沉积制备ZnO纳米薄膜

用一种新颖的制备纳米粒子与薄膜的垂直靶向脉冲激光沉积(VTPLD)方法,在室温及空气气氛下,于玻璃基底上成功地制备出ZnO纳米薄膜.用扫描电子显微镜(SEM)和X射线衍射(XRD)仪对ZnO纳米薄膜的表面形貌和结构进行了表征,用荧光光谱仪对薄膜的光致发光(PL)性能进行了测量.结果表明,当激光功率为13 W时,沉积出的粒子大小较均匀,尺寸在40 nm左右,且粒子排列呈现出一定方向性;当激光功率为21 W时,沉积的ZnO纳米薄膜图呈现出微纳米孔的连续薄膜.在玻璃基底上沉积的ZnO纳米薄膜有一主峰对应的(002)衍射晶面,表明ZnO纳米薄膜具有良好的c轴取向性.不同激光功率下沉积ZnO纳米薄膜经500 ℃热处理后的PL峰,其强度随激光能量而变化,最大发光波长位于412 nm.     

脉冲激光沉积薄膜专家系统

脉冲激光淀积技术是制备薄膜的先进技术之一,具有膜成分容易做到与靶成分一致、便于控制淀积条件、适用面宽、淀积速率高、易于引入新技术等特点.为了使脉冲激光淀积技术智能化、简便化,研究开发出了"脉冲激光淀积薄膜专家系统".该专家系统具有薄膜基片选择、淀积参数确定、实验结果总结、相关数据查询等功能.本文首先阐述了该专家系统的设计思想和工作原理,然后介绍了该专家系统的功能和结构;最后对该专家系统的适用条件和进一步拓展的目标进行了讨论.利用该专家系统,成功地指导了掺钛氧化钽薄膜和钛酸锶钙薄膜的制备.(OH16)     

脉冲激光沉积薄膜技术研究新进展

脉冲激光沉积薄膜是近年来发展起来的使用范围最广、最有希望的制膜技术。陈述了其原理、特点、研究方法,总结了超快脉冲激光、脉冲激光真空弧、双光束脉冲激光沉积等最新的PLD薄膜制备技术研究进展。     

双光束复合脉冲激光辐照沉积纳米金刚石薄膜

利用双光束复合脉冲激光辐照石墨悬浮液沉积技术,制备了高效率、高质量的纳米金刚石薄膜,成功解决了金刚石薄膜沉积不均匀和衬底温度对金刚石薄膜的影响。通过拉曼光谱仪和高分辨率透射电镜对薄膜的微观结构和组成进行了检测分析,实验结果表明,Raman光谱的D峰出现在1334cm-1处,G峰出现在1571cm-1处,沉积的薄膜致密均匀,晶粒平均尺寸在5nm左右。在制备过程中通过复合激光束辅以温度为金刚石薄膜的生长提供了更有利的条件,并在常温常压下连续制备出了粒度分布均匀的纳米金刚石薄膜。     

脉冲激光沉积法制备氧化锌薄膜

ZnO是一种新型的Ⅱ-Ⅵ族半导体材料,具有优良的晶格、光学和电学性能,其显著的特点是在紫外波段存在受激发射。利用脉冲激光沉积法(PLD)在氧气氛中烧蚀锌靶制备了纳米晶氧化锌薄膜,衬底为石英玻璃,晶粒尺寸约为28-35 nm。X射线衍射(XRD)结果和光致发光(PL)光谱的测量表明,当衬底温度在100-250℃范围内时,所获得的ZnO薄膜具有c轴的择优取向,所有样品的强紫外发射中心均在378-385 nm范围内,深能级发射中心约518-558 nm,衬底温度为200℃时,得到了单一的紫外光发射(没有深能级发光)。这归因于其较高的结晶质量。     

脉冲激光沉积制备c轴取向AlN薄膜

ｃ轴取的ＡｌＮ具有优异的压电性和声表面波传输特性,已受到人们日益广泛的重视。文章报道了采用ＫｒＦ脉冲准分子激光沉积工艺,在Ｓｉ（１００）衬底上成功地制备了ｃ轴取向的ＡｌＮ晶态薄膜。Ｘ射拇衍射与傅里叶变换红外光谱的结果表明,在３００℃－８００℃衬底温度下,薄膜均只有（００２）－一个衍射峰,但随着温度的升高,薄膜的结晶质量变好;     

SBT铁电薄膜及其脉冲准分子激光制备

采用脉冲准分子激光沉积法在Ｐｔ／Ｔｉ／ＳｉＯ２／Ｓｉ衬底上成功地制备了ＳＢＴ铁电薄膜，发现存在一个最佳沉积衬底温度约为４５０℃。在该温度下沉积的ＳＢＴ薄膜具有较饱和的方形电滞回线，其剩余极化Ｐｒ和矫顽电场Ｅｃ分别为８．４μＣ／ｃｍ２和５７ｋＶ／ｃｍ。     

用脉冲激光沉积法制备类金刚石膜及金刚石薄膜

简要评述了用脉冲激光沉积技术制备类金刚石膜及金刚石薄膜的研究进展，总结了激光脉冲沉积制备薄膜的基本原理及其特点，分析了激光波长，能量，衬底温度等对薄膜质量的影响。     

脉冲激光扫描淀积类金刚石薄膜

采用能量密度为1.178×109W/cm2的XeCl准分子激光直接辐照高纯度的石墨靶,并同时采用辅助放电,在1×10-5Torr的真空环境中,于温度为80℃的Si(100)的基片上淀积出类金刚石薄膜,Raman光谱显示在1330cm-1处出现较强的散射峰值;对薄膜红外光谱进行测试,其光谱在2900cm-1处有吸收峰,表明所淀积的类金刚石薄膜含有C-H键,其H元素与C元素的比为45%.薄膜的电阻率为1.89×106Ω/cm,通过光吸收测得的该薄膜的能隙为1.55eV.     

Pulsed laser deposition and physical properties of carbon nitride thin films

Carbon nitride thin films were grown using an approach that combines pulsed laser deposition and atomic beam techniques. The composition and phases of the carbon nitride materials obtained from the reaction of laser ablated carbon and atomic nitrogen have been systematically investigated. The nitrogen composition was found to increase to a limiting value of 50% as the fluence was decreased for laser ablation at both 532 and 248 nm. Analysis of these experiments show that the growth rate determines the overall nitrogen composition, and thus suggests that a key step in the growth mechanism involves a surface reaction between carbon and nitrogen. Infrared spectroscopy has also been used to assess the phases present in the carbon nitride thin films. This spectroscopic measurement indicates that a cyanogen-like impurity occurs in films with nitrogen compositions greater than 30%. Investigations of the effects of thermal annealing have been carried out, and show that the impurity phase can be eliminated to yield a single phase material. In addition, systematic measurements of the electrical resistivity and thermal conductivity of the carbon nitride films were made as a function of nitrogen content. The implications of these results are discussed.     

脉冲准分子激光沉积Mg/Ag掺杂薄膜

基于梯度掺杂功能薄膜材料在工业应用中的需要、通过金属掺杂对新材料改性研究的需要 ,用单束激光交替作用于两相异靶材 ,制备了Mg Ag组分比为 0 .9的掺杂薄膜     

PLD制备铁电薄膜工艺参数的研究现状

铁电薄膜在微电子学、光电子学、集成光学和微电子机械系统等领域有着广泛的应用(前景)。脉冲激光沉积（PLD）在铁电薄膜制备方面显示出独特的优越性。介绍了PLD的原理、特点；综述了PLD工艺参数，包括衬底温度、氧气压力、靶材结构与成分、能量密度、靶基距离、缓冲膜以及退火工艺等的研究现状；展望了PLD制备铁电薄膜的应用前景。     

NiO薄膜的脉冲激光沉积及其结构和光学特性研究

利用脉冲激光沉积法在ITO玻璃衬底上制备了NiO薄膜,利用XRD、AFM对样品的晶体结构和表面形貌进行了表征,并对其透射光谱进行了测试,研究了衬底温度及脉冲激光能量对所制NiO薄膜的结构、形貌和光学特性的影响。结果表明:在脉冲激光能量为180 mJ、衬底温度为600~700℃条件下所制备的样品为沿(111)晶面择优取向生长的多晶NiO薄膜,薄膜结晶质量良好,表面颗粒排列均匀,可见光透射率较高,禁带宽度为3.40~3.47 eV。     

脉冲激光沉积技术及其应用

薄膜材料已在微电子元件、超导材料、生物材料等方面得到广泛应用,为了得到高质量的薄膜材料,脉冲激光沉积技术受到了广泛的关注。介绍了脉冲激光沉积技术的原理、特点,综述了其在制备半导体、高温超导、类金刚石、铁电、生物陶瓷薄膜等方面的应用和研究现状,展望了该项技术的应用前景。     

Waveguide properties of optical thin films grown by pulsed laser deposition

The propagation of optical beams in optical thin films grown by pulsed laser deposition is studied numerically in order to predict the influence of the film curvature on the performance of planar waveguide lasers. Several waveguiding structures are considered. The confinement of both the pump and the signal fields as well the overlap between the beams during propagation are examined.     

PtSi红外探测器材料制备技术

介绍了溅射、分子束外延、脉冲激光沉积和激光分子束外延等ＰｔＳｉ薄膜的制备方法以及应用进展。着重介绍了脉冲激光沉积和激光分子束外延技术的原理及特点。     

Ultra-short pulsed laser deposition and patterning of SiC thin films for MEMS fabrication

A Ti:Sapphire (IR 800-nm) femtosecond (fs) pulsed laser was used to ablate a sputtering grade of silicon carbide (SiC) in an ultra-high vacuum chamber. The laser-induced plasma species were then driven and grown to form 3C-SiC films of about 1 μm thick on single crystal silicon wafers at 20 °C (room temperature) and 500 °C. Scanning electron microscopy, atomic force microscopy, X-ray photoelectron microscopy, X-ray diffraction and nanoindentation were used to characterize the structure, composition, thickness and properties of the SiC films. Results of the femtosecond-pulse laser deposited (fs-PLD) films were compared with those obtained by atmospheric pressure chemical vapor deposition (APCVD) and nanosecond-pulse laser (excimer laser at 248-nm) deposition (ns-PLD). The distinctive features of fs-PLD films are their extremely smooth surfaces, stoichiometry, amorphous structure and low defect density compared to APCVD films, along with better film quality and higher growth rates than ns-PLD films. In addition to film growth studies, a SiC microgripper (to grab 20-μm-sized objects) was micromachined by use of the fs-pulsed laser to demonstrate the utility of ultra-short PLD in SiC-device fabrication.