一种应用于WiMAX协议的全集成3.5GHzCMOS功率驱动放大器

A fully integrated CMOS differential power amplifier driver(PAD) is proposed for WiMAX applications. In order to fulfill the differential application requirements,a transmission line transformer is used as the output matching network.A differential inductance constitutes an inter-stage matching network.Meanwhile,an on chip balun realizes input matching as well as single-end to differential conversion.The PAD is fabricated in a 0.13μm RFCMOS process.The chip size is 1.1×1.1 mm~2 with all of the matching network integrated on chip. The saturated power is around 10 dBm and power gain is about 12 dB.     

A 77-100 GHz power amplifier using 0.1-μm GaAs PHEMT technology

A wideband MMIC power amplifier at W-band is reported in this letter. The four-stage MMIC, developed using 0.1 μm GaAs pseudomorphic HEMT (PHEMT) technology, demonstrated a flat small signal gain of 12.4±2 dB with a minimum saturated output power (Psat) of 14.2 dBm from 77 to 100 GHz. The typical Psat is better by 16.3 dBm with a flatness of 0.4 dB and the maximum power added efficiency is 6% between 77 and 92 GHz. This result shows that the amplifier delivers output power density of about 470 mW/mm with a total gate output periphery of 100 μm. As far as we know, it is nearly the best power density performance ever published from a single ended GaAs-based PHEMT MMIC at this frequency band.     

Design of 20-44 GHz broadband doubler MMIC

This paper presents the design and performance of a broadband millimeter-wave frequency doubler MMIC using active 0.15μm GaAs PHEMT and operating at output frequencies from 20 to 44 GHz.This chip is composed of a single ended-into differential-out active Balun,balanced FETs in push-push configuration,and a distributed amplifier. The MMIC doubler exhibits more than 4 dB conversion gain with 12 dBm of output power,and the fundamental frequency suppression is typically -20 dBc up to 44 GHz.The MMIC works at...     

功率为16.9 dBm增益大于20 dB的InP DHBT W波段功率放大器

A two-stage MMIC power amplifier has been realized by use of a l-μm InP double heterojunction bipolar transistor(DHBT).The cascode structure,low-loss matching networks,and low-parasite cell units enhance the power gain.The optimum load impedance is determined from load-pull simulation.A coplanar waveguide transmission line is adopted for its ease of fabrication.The chip size is 1.5×1.7 mm~2 with the emitter area of 16×1μm×15μm in the output stage.Measurements show that small signal gain is more than 20 dB over 75.5-84.5 GHz and the saturated power is 16.9 dBm @ 79 GHz with gain of 15.2 dB.The high power gain makes it very suitable for medium power amplification.     

High Power SiGe X-Band (8～10GHz) Heterojunction Bipolar Transistors and Amplifiers

Limited by increased parasitics and thermal effects as device size increases,current commercial SiGe power HBTs are difficult to operate at X-band (8～12GHz) frequencies with adequate power added efficiencies at high power levels.We find that,by changing the heterostructure and doping profile of SiGe HBTs,their power gain can be significantly improved without resorting to substantial lateral scaling.Furthermore,employing a common-base configuration with a proper doping profile instead of a common-emitter configuration improves the power gain characteristics of SiGe HBTs,thus permitting these devices to be efficiently operated at X-band frequencies.In this paper,we report the results of SiGe power HBTs and MMIC power amplifiers operating at 8～10GHz.At 10GHz,a 22.5dBm (178mW) RF output power with a concurrent gain of 7.32dB is measured at the peak power-added efficiency of 20.0%,and a maximum RF output power of 24.0dBm (250mW) is achieved from a 20 emitter finger SiGe power HBT.The demonstration of a single-stage X-band medium-power linear MMIC power amplifier is also realized at 8GHz.Employing a 10-emitter finger SiGe HBT and on-chip input and output matching passive components,a linear gain of 9.7dB,a maximum output power of 23.4dBm,and peak power added efficiency of 16% are achieved from the power amplifier.The MMIC exhibits very low distortion with 3rd order intermodulation (IM) suppression C/I of -13dBc at an output power of 21.2dBm and over 20dBm 3rd order output intercept point (OIP3).     

Design of a low noise distributed amplifier with adjustable gain control in 0.15μm GaAs PHEMT

正A low noise distributed amplifier consisting of 9 gain cells is presented.The chip is fabricated with 0.15-μm GaAs pseudomorphic high electron mobility transistor(PHEMT) technology from Win Semiconductor of Taiwan.A special optional gate bias technique is introduced to allow an adjustable gain control range of 10 dB.A novel cascode structure is adopted to extend the output voltage and bandwidth.The measurement results show that the amplifier gives an average gain of 15 dB with a gain flatness of±1 dB in the 2-20 GHz band.The noise figure is between 2 and 4.1 dB during the band from 2 to 20 GHz.The amplifier also provides 13.8 dBm of output power at a 1 dB gain compression point and 10.5 dBm of input third order intercept point(IIP3),which demonstrates the excellent performance of linearity.The power consumption is 300 mW with a supply of 5 V,and the chip area is 2.36×1.01 mm~2.     

垂直腔面发射激光器

The development and application of vertical-cavity surface-emitting lasers (VCSELs) are summarized in this paper. The emphasis is focused on the high power single and 2-D arrays bottom-emitting VCSELs with a wavelength of 980nm. A distinguished device performance is achieved. The maximum continuous-wave (CW) output power of large aperture single devices with active diameters up to 500μm is as high as 1.95W at room temperature, which is to our knowledge the highest value reported for a single device. Size dependence of the output power, the threshold current and the differential resistance are discussed. A 16 elements array with 200μm aperture size (250μm center spacing) of individual elements shows a CW output power of 1.32W at room temperature.     

一种应用于RFID标签的新型功率放大器设计

A novel matching method between the power amplifier (PA) and antenna of an active or semi-active RFID tag is presented. A PCB dipole antenna is used as the resonance inductor of a differential power amplifier. The total PA chip area is reduced greatly to only 240 × 70 μm² in a 0.18 μm CMOS process due to saving two on-chip integrated inductors. Operating in class AB with a 1.8 V supply voltage and 2.45 GHz input signal, the PA shows a measured output power of 8 dBm at the 1 dB compression point.     

A fully monolithic 0.18 μm SiGe BiCMOS power amplifier design

A fully monolithic power amplifier(PA) for multi-mode front end IC integration is presented.The PA is fabricated in an IBM 7WL 0.18μm SiGe BiCMOS process with all the matching networks integrated on a chip. After load-pull test to find the best power stage size and layout optimization,the measured results show that the PA can obtain a 24 dBm maximum output power at 2.4 GHz,the output 1 dB compression point is 21 dBm at 5 dBm input,and the PAE is 18%.This PA is complete on-chip tested without any bonding wires and on-board matching, targeting fully power module integration in multi-mode system on chip.     

一种针对中国超宽带标准的CMOS PA

A 6–9 GHz ultra-wideband CMOS power amplifier (PA) for the high frequency band of China's UWB standard is proposed. Compared with the conventional band-pass filter wideband input matching methodology, the number of inductors is saved by the resistive feedback complementary amplifying topology presented. The output impendence matching network utilized is very simple but efficient at the cost of only one inductor. The measured S₂₂ far exceeds that of similar work. The PA is designed and fabricated with TSMC 0.18 μ m 1P6M RF CMOS technology. The implemented PA achieves a power gain of 10 dB with a ripple of 0.6 dB, and S₁₁ < –10 dB over 6–9 GHz, S₂₂ < –35 dB over 4–10 GHz. The measured output power at the 1 dB compression point is over 3.5 dBm from 6 to 9 GHz. The PA dissipates a total power of 21 mW from a 1.8 V power supply. The chip size is 1.1 × 0.8 mm².     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and sub-pixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.