一种高集成高空间分辨率220 GHz检波器（英文）

设计了一种高集成检波器,其包含贴片天线、匹配电路、肖特基二极管和透镜.在中芯国际130 nm工艺下将天线、匹配电路、肖特基二极管集成到一个芯片上,检波器的集成度相比于分离式有了明显的提高.为增强片上天线的方向性,进行了带有空气腔的尼龙透镜的设计和优化.透镜上的空气腔不但提供了组装空间而且减小了透镜体积.通过测试,天线在220 GHz辐射增益为22 dB,其中透镜贡献约为20 dB.检波器测试得到的响应率可达到130~150 V/W,等效噪声功率计算为400~460 pW/Hz~(1/2).     

（英）一种基于透镜天线的宽带太赫兹准光检波器

设计了一种能够工作在140~325 GHz频带的宽带准光检波器,由一颗高阻硅透镜和单片集成检波芯片组成.设计并加工出双缝天线,在天线馈电端集成了肖特基二极管,该紧凑结构使其能够接收空间中的太赫兹辐射并转换为基带信号.为增强片上天线的方向性,利用MLFMM算法进行了扩展半球硅透镜的设计和优化,实现了良好的辐射特性.通过测试,天线在220 GHz和324 GHz处的辐射增益分别为26 dB和28 dB.在140~325 GHz,检波器测试得到的响应率可达到1 000~4 000 V/W,对应的等效噪声功率(NEP)估算为0.68~273 pW/Hz.     

一种基于透镜天线的宽带太赫兹准光检波器（英文）

设计了一种能够工作在140~325 GHz频带的宽带准光检波器,由一颗高阻硅透镜和单片集成检波芯片组成.设计并加工出双缝天线,在天线馈电端集成了肖特基二极管,该紧凑结构使其能够接收空间中的太赫兹辐射并转换为基带信号.为增强片上天线的方向性,利用MLFMM算法进行了扩展半球硅透镜的设计和优化,实现了良好的辐射特性.通过测试,天线在220 GHz和324 GHz处的辐射增益分别为26 dB和28 dB.在140~325 GHz,检波器测试得到的响应率可达到1 000~4 000 V/W,对应的等效噪声功率(NEP)估算为0.68~2.73pW/Hz(1/2).     

太赫兹准光混频器的设计与实现

设计了一种用于太赫兹接收机的准光混频器。该混频器主要由肖特基二极管集成平面天线和高阻硅透镜2部分组成,其中肖特基二极管的截止频率为3.5 THz。平面双缝天线、螺旋天线、对数周期天线分别与肖特基二极管进行一体化集成,再通过高阻硅透镜来消除介质表面波,以达到改善天线辐射性能的目的。所设计的准光混频器工作频率为340 GHz,并对该混频器的检波性能、方向图和混频性能进行了测试,其变频损耗小于15 dB。     

用于太赫兹成像的CMOS肖特基二极管三维结构

提出了一种简单、科学、有效的高截止频率肖特基势垒二极管设计方法。通过SMIC 180 nm工艺制备的肖特基二极管的截止频率为800 GHz,分析测试结果和仿真数据优化后的肖特基势垒二极管截止频率可以达到1 THz左右。完成了包括天线、匹配电路和肖特基势垒二极管的集成探测器,在220 GHz下其测试响应率可达130 V/W,等效噪声功率估计为400 pw/。完成了陶瓷瓶内不可见液面的成像实验并取得了良好的效果。     

用于太赫兹成像的CMOS肖特基二极管三维结构研究（英文）

提出了一种简单、科学、有效的高截止频率肖特基势垒二极管设计方法。通过SMIC 180 nm工艺制备的肖特基二极管的截止频率为800 GHz,分析测试结果和仿真数据优化后的肖特基势垒二极管截止频率可以达到1THz左右。完成了包括天线、匹配电路和肖特基势垒二极管的集成探测器,在220 GHz下其测试响应率可达130 V/W,等效噪声功率估计为400 pW/Hz~(1/2)。完成了陶瓷瓶内不可见液面的成像实验并取得了良好的效果。     

140 GHz基于CPWG单平衡基波混频GaAs集成电路

通过在300 μm厚度的GaAs衬底条件下,利用共面波导传输线实现了基波混频集成电路设计。利用半导体分析仪测试I-U和C-U曲线,并成功提取了相应的肖特基二极管模型。结合建立的肖特基二极管模型,代入Lange耦合器、中频结构和匹配网络等实现了140 GHz零中频基波混频片上电路,并加入了地-信号-地(GSG)测试封装。最终仿真结果表明：在固定中频1 GHz的条件下,变频损耗最优为-7 dB,3 dB带宽大于40 GHz。     

基于Schottky二极管和Hammer-Head滤波器0.67 THz二次谐波混频器

通过测量肖特基二极管的I-V和C-V曲线,建立等效电路模型.利用三维电磁场和谐波平衡仿真工具分别进行三维结构仿真和电路宽带匹配,最终实现混合集成方式的0.67THz谐波混频器设计.测试结果表明:混频器中心频率为0.685 THz,射频3 dB带宽为47 GHz,双边带变频损耗13.1~16 dB,在685 GHz双边带噪声温度最低值为11500 K.     

一种700 MHz频段的高线性驱动放大器MMIC

采用GaAsPHEMT工艺,设计了一种700 MHz频段的高线性驱动放大器MMIC.该放大器内部集成了带通复合匹配网络结构的宽带输入匹配电路,通过两种幅频特性相反的匹配网络进行组合,有效地拓展了应用带宽,提高了线性度和增益平坦度.放大电路采用两级放大结构,保证增益指标,引入稳定性设计以保证放大器工作的稳定性.偏置电路采用带负反馈系统的有源镜像结构,提高了驱动能力,使电路更加稳定.该放大器集成输出检波器,采用二极管检波器结构实现功率检波,具有结构简单、占用芯片面积小的优点.该放大器典型频点700 MHz处的输出三阶交调点为42.6 dBm,1 dB压缩点输出功率为27.6 dBm.通过调整片外输出匹配电路可满足700 MHz及其他频段的应用需求.     

W 波段宽带高灵敏度功率检波器

在对肖特基二极管等效电路模型精确建模的基础上,设计并制作了W 波段宽带高灵敏度功率检波器。根据GaAs 低势垒肖特基二极管的物理结构,建立了二极管等效电路模型,并通过对W 波段检波器试验模块的研制和测试提取了准确的电路模型参数。最后,针对宽带工作要求,根据二极管等效电路模型,优化了射频阻抗匹配网络,使检波器工作频率能够覆盖78～98 GHz。测试结果表明,当输入功率为-30 dBm 时,82 GHz 处检波灵敏度达到了7000 mV/ mW,78～98 GHz 范围内检波灵敏度高于1500 mV/ mW,实测正切灵敏度优于-36 dBm。实测和仿真结果一致,验证了二极管等效电路模型的准确性。     

An improved solution for integrated array optics in quasi-opticalmm and submm receivers: the hybrid antenna

A dielectric lens antenna that is a special case of an extended hemispherical dielectric lens and is operated in the diffraction-limited regime is considered. The dielectric lens antenna is fed by a planar antenna that is mounted on the flat side of the dielectric lens antenna, using it as a substrate, and the combination is termed a hybrid antenna. Beam pattern and aperture efficiency measurements were made at millimeter and submillimeter wavelengths as a function of the extension of the hemispherical lens and of lens size. An optimum extension distance for which excellent beam patterns and simultaneously high aperture efficiencies can be achieved is found experimentally and numerically. At 115 GHz the aperture efficiency was measured to be (76±6)% for a diffraction-limited beam with sidelobes below -17 dB. Results for a single hybrid antenna with an integrated superconductor-insulator-superconductor (SIS) detector and a broadband matching structure at submillimeter wavelengths are presented. The hybrid antenna is space efficient in an array due to its high aperture efficiency, and is easily mass produced, thus being well suited for focal plane heterodyne receiver arrays     

A Self-Mixing NMOS Channel-Detector Optimized for mm-Wave and THZ Signals

A self-mixing terahertz signal detector combined with a low noise amplifier and a properly balanced - folded dipole or slot antenna for concentrating millimeter wave signals to NMOS detectors is described. The detector was optimized to 300 GHz signals. The noise equivalent power (NEP) was estimated to 320 pW/√Hz while the total output referred noise of 2.1 μV/(Hz)^1/2 was measured at amplifier gain of 46 dB. This was achieved by using NMOS mixer devices optimized for resistive mixing that operate in a linear region of operation where the channel voltage is set close to zero by means of regulating the virtual ground level. The NMOS device, which is positioned at the antenna connections, has a minimum channel length that permits a far more precise calculation of the coupling devices. A position like termination of the two symmetrical detector devices was distributed between an antenna area and the amplification stage. The detectors were fully integrated using the 250 nm CMOS technology. Good matching was found between mathematically analyzed and simulated noise performances and prototypes measurements, where comparable measurements were performed on a THz array which consists of four pixels with folded dipole antennas or those with slot type antennas.     

Dual-Double Slot Antennas Fabricated with Single Superconducting Film for Millimeter Wave Camera

We propose an entirely plane-structure camera for millimeter wave astronomy, in order to reduce production cost and time. The camera is composed of a silicon lens-let, antennas, feed lines, and detectors made from the same superconducting aluminum film on a silicon substrate. A couple of double-slot antennas are located the same focal plane of a small substrate lens to enhance the packing density of detectors and observation efficiency. To achieve high sensitivity, we adapted a microwave kinetic inductance detector as a photon sensor, which consists of a superconducting microresonator. We examined the optical performance of the camera attached to a silicon lens array at 220 GHz in a 0.3 K cryostat. The measured beams were in good agreement with the calculations within the dynamic range of the setup (20 dB). Polarization misalignments between the dual-double slot antenna were less than 2^°, and cross-polarization level was around ?7 dB. The relatively high cross-polarization would be explained by an antenna crosstalk mediated by quasiparticle diffusion.     

2560×2048元短波红外InGaAs焦平面探测器（特邀）

高性能大规模小像元短波红外InGaAs焦平面探测器是新一代航天遥感仪器向高空间分辨率、高能量分辨率、高时间分辨率发展需要的核心器件。文中报道了高密度InGaAs探测器阵列设计与制备,并与匹配的Si-CMOS读出电路倒焊互连形成焦平面的最新研究进展,重点突破了高密度小像素探测器的暗电流和噪声抑制、百万像素焦平面倒焊互连等关键技术,解决了高平整度芯片面形控制、In柱凸点形貌和高度一致性控制、高密度倒焊偏移控制等倒焊新工艺,研制了像元中心距10 μm的2560×2048元焦平面探测器,其峰值探测率优于1.0×1013 cm·Hz1/2/W,响应不均匀性优于3%,有效像元率优于99.7%,动态范围优于120 dB。采用该焦平面进行了实验室演示成像,图片清晰。     

Matching Condition of Direct THz-Signal Detection from On-Chip Resonating Antennas with CMOS Transistors in Non-resonant Plasma Wave Mode

This paper presents matching condition for detector at THz frequencies, which directly read signals from an integrated antenna. We use direct THz-signal detections with CMOS transistors in non-resonant plasma wave mode, which are embedded in on-chip resonating antennas. The detector detects THz envelope signals directly from the side edges of the on-chip patch antennas. The signal detection mechanism is studied in the view of the impedance conditions of the antenna and the detector. The detectors are implemented with stacked transistors structures to achieve high responsivity. The measured responsivities of the detectors with antenna impedances that were simulated to be 599.7, 912.3, 1565, and 3190.6 Ω agree well with the calculated values. Moreover, the responsivity dependence on the detector impedance is shown with two different input impedances of the detectors. Since CMOS circuit models from foundry are not accurate at frequencies higher than f _t , the matching guideline between the antenna and the detector is very useful in designing high responsivity detectors. This study found that a detector has to have a large input impedance conjugately matched to the antenna’s impedance to have high responsivity.     

A 74.8 mW Soft-Output Detector IC for 8 8 Spatial-Multiplexing MIMO Communications

In this paper, VLSI implementation of a configurable, soft-output MIMO detector is presented. The proposed chip can support up to 8 $, times ,$8 64-QAM spatial multiplexing MIMO communications, which surpasses all reported MIMO detector ICs in antenna number and modulation order. Moreover, this chip provides configurable antenna number from 2$,times,$ 2 up to 8$,times,$ 8 and modulation order from QPSK to 64-QAM. Its outputs include bit-wise log likelihood ratios (LLRs) and a candidate list, making it compatible with powerful soft-input channel decoders and iterative decoding system. The MIMO detector adopts a novel sphere decoding algorithm with high decoding efficiency and superior error rate performance, called modified best-first with fast descent (MBF-FD). Moreover, a low-power pipelined quad-dual-heap (quad-DEAP) circuit for efficient node pool management and several circuit techniques are implemented in this chip. When this chip is configured as 4$, times ,$4 64-QAM and 8$, times ,$ 8 64-QAM soft-output MIMO detectors, it achieves average throughputs of 431.8 Mbps and 428.8 Mbps with only 58.2 mW and 74.8 mW respective power consumption and reaches 10$^{-5}$ coded bit error rate (BER) at signal-to-noise ratio (SNR) of 24.2 dB and 22.6 dB, respectively.      

一种基于超表面的低剖面宽带透镜天线

提出一种新型的基于超表面的低剖面宽带高增益透镜天线,该透镜采用宽带的电偶极子天线作为馈源,设计中心频率工作在10 GHz.针对超表面透镜在不同位置的折射率的需求,同时提出了一种新型的非谐振超材料单元,该单元由三层介质板组成,中间一层是印有十字形带状线的双层印刷板.通过改变上下两层介质的介电常数,可以达到不同的折射率变化范围,从而实现透镜的中间层和阻抗匹配层对折射率的需求.所提出的透镜天线设计方法可以获得21 dBi的最高增益以及58%的-10 dB阻抗带宽.更重要的是所提出的具有高折射率的超材料单元可以实现只有0.32λ₀的透镜厚度,大大减小了透镜的剖面.最后进行了加工实验,对所提出的方法和仿真结果进行了验证,实验结果表明,透镜天线的实测带宽、方向图和增益都与仿真理论结果有较好的吻合度.     

Adaptive space-time feedforward/feedback detection for high datarate CDMA in frequency-selective fading

We investigate linear and nonlinear space-time minimum mean-square-error (MMSE) multiuser detectors for high data rate wireless code-division multiple-access (CDMA) networks. The centralized reverse-link detectors comprise a space-time feedforward filter and a multiuser feedback filter which processes the previously detected symbols of all in-sector users. The feedforward filter processes chip-rate samples from a bank of chip-matched filters which operate on the baseband outputs from an array of antennas. We present an adaptive multiuser recursive least squares (RLS) algorithm which determines the MMSE adjusted filter coefficients with less complexity than individual adaptation for each user. We calculate the outage probabilities and isolate the effects of antenna, diversity, and interference suppression gains for linear and nonlinear filtering and for CDMA systems with varying levels of system control (e.g., timing control, code assignment, cell layout). For eight users transmitting uncoded 2-Mb/s quadrature phase-shift keying with a spreading gain of eight chips per symbol over a fading channel with a multipath delay spread of 1.25 μs, the performance of a three-antenna feedforward/feedback detector was within 1 dB (in signal-to-noise ratio per antenna) of ideal detection in the absence of interference. By training for 10% of a 5-ms frame, RLS adaptation enabled the same detector to suffer less than a 0.5-dB penalty due to the combined effects of imperfect coefficients and error propagation. The advantage of nonlinear feedforward/feedback detection over linear feedforward detection was shown to be significantly larger for a CDMA system with enhanced system control     

Uncooled THz/sub-THz Rectifying Detectors: FET vs. SBD

The parameters (responsivity R and noise equivalent power (NEP)) of long channel unbiased (zero drain-source bias (V _DS = 0)) silicon field effect transistors (FET) as THz/sub-THz detectors with account of some parasitics were considered. These parameters and their radiation frequency ν dependences are compared with those of contemporary Schottky barrier diode (SBD) THz/sub-THz detectors. To describe and compare the known experimental data for both of detectors similar models, taking into account the parasitics (some FET or SBD resistances and capacities), were used. It is shown that taking into account the parasitics and detector-antenna impedance matching one can describe Si FET detector parameters and estimate the performance limits of such detectors. The R and NEP radiation frequency ν dependences are similar for FET and SBD detectors and are proportional to ν ^-2 or to ν ^-4. The model used for SBD detectors describes well the known experimental data for optical NEP ^opt but for Si FET ones the sufficient scatter in experimental data is observed. The reason of it seems is mainly due to non-optimized technologies for FETs as detectors for THz/sub-THz radiation.