三网融合背景下的通信声学

通信声学是声学与信息技术相互渗透融合的产物,随着信号处理技术和电声学技术的发展,其研究和应用领域得到快速扩展.介绍了通信声学的3个主要方向:声接收技术,声传输技术和声发射技术的研究现状和热点.重点探讨了在三网融合背景下,通信声学的应用前景及所面临的挑战.     

激光致声技术在跨冰层介质的空中-水下通信应用方法

无线电波、声波和光波通信技术可有效应用于复杂的海洋通信环境中,然而在极寒地区和极地区域海面冰层覆盖的情况下,其在远端发送信号将无法穿透冰层介质,而难以实现空中与水下的通信联络,故提出一种应用于跨冰层介质传输的激光致声通信体制,通过空中发射激光与海面固体冰层的互作用诱导声波信号,再利用海面上覆盖冰层的声源辐射,向下方水体传播来建立空中到水下光波与声波的通信链路,系统将光学与声学技术的有机融合,充分利用固体冰层对声波的快速传导作用,探讨光声转换机理、调制编码及激光声传输特点与性能分析,有效解决海洋通信中受冰层覆盖影响和单一种类信号传输受限问题,为海洋跨空通信提供一种新的技术途径。     

散射通信在海洋石油开采中的应用研究

对流层散射通信凭借其单跳跨距大、传输容量大、架设方便、经济实用等优势在海洋石油通信中得到青睐。首先分析了散射通信技术在海洋石油开采应用的优越性,然后介绍了海洋石油散射通信设备的组成及关键技术指标,最后分析并给出了散射设备采用的关键技术。     

海洋物联网关键技术研究与应用

传统的海洋观测网孤立、碎片化的传感数据已经难以满足我国海洋观测领域的需求,低成本投入、低功耗运作、互联互通的海洋物联网是海洋信息领域的主流研究方向。介绍了海洋观测网的发展历程及研究现状,并在浙江大学摘箬山岛海底观测网络的研究基础上,提出一种新型的海洋物联系统架构以及一系列海洋物联网关键设备与平台,包括小型化海洋中控机、水声通信机、窄带物联网浮球、坐底式试验平台、便携式声学释放平台。未来,海洋物联网将向着轻量级、通信方式多样化与智能化的方向发展,并接入陆地互联网,实现“空天地海”万物互联。     

外军潜艇通信装备发展趋势研究

随着计算机技术的发展,各种各样的通信手段被连接到一起形成网络,潜艇已经成为未来海军网络中心战的完全参与者。为了适应这种需要,潜艇的通信装备必须进行改革。改革的方案主要集中在通信天线、单双向通信浮标、潜艇间声学通信链、潜艇与UUV间通信、潜艇与声学网关浮标通信、潜艇与卫星通信以及各种规格和性能的声学射频网关浮标通信。美国和英国在潜艇通信领域已经取得了很大的进步,他们代表着世界上最先进的技术和发展趋势。     

水下无线通信网络安全问题研究

水下无线通信网络(UWCN)因具有传输速率低、误码率高、高延时和信道窄等缺陷,特别容易遭受恶意攻击。水下声学通信信道具有独特特性,水下通信网络与相应的陆基网络之间存在差异,因此必须开发有效、可靠的安全机制。主要讨论了水下无线通信网络的特性和安全弱点,介绍了水下无线通信网络的安全威胁种类,分析了水下无线通信网络的安全需求,以及国外水下无线通信网络安全的研究进展,并指出尚待解决的一些安全问题。     

海洋石油行业海陆主要通信方式分析

社会的不断进步,加大了人们对能源的需求。能源公司不只针对陆地上的油气开采,还针对在海洋的油气开采。因此,人们将油气钻采的设备投入到了海洋开采的事业中,在海洋石油行业的开采和生产,以及运输都不能离开与陆地之间的通信,因为海陆之间的通信链路能够有效的确保信息的传递。本文通过介绍通行的方式,根据海洋石油行业的情况提出主要的通信方式,并分析海陆主要通信方式的特点和缺点。     

浅析VSAT通信在海洋船舶上的应用

随着海洋上活动的增加,海洋上的通信需求越来越高,VSAT通信作为一种通信手段,由于其具有一定的优势,正在海洋船舶上逐渐得到使用.随着VSAT通信在海洋上的使用,诸如远程监控、视频会议、Internet等在海洋船舶上得到应用.由于VSAT通信的特点,星状网络是首选网络结构,C波段和Ku波段是2种主要的卫星通信波段.     

中科院声学所、中科信利与富迪科技正式结盟

中国科学院声学研究公布了其在通信声学领域的重要技术进展。并且，声学所与其转投资子公司中科信利分别与富迪科技的结盟仪式也一并举行，这三者将携手开发先进声学技术。     

天通一号数传终端在海洋浮标上的应用

海洋浮标作为海洋数据观测站,能够完成自动、全天候地对海洋环境数据进行采集和传输,得到了广泛的应用。"天通一号"是我国自主知识产权的卫星移动通信系统,具有使用灵活、终端功耗低、尺寸小,保密性强等优点,可满足海洋浮标远离陆地时对于大量数据传输、数据保密性强的需求。文章在分析我国海洋浮标设备以及常用通信手段的基础上,设计了一款基于"天通一号"卫星移动通信系统的海洋浮标通信终端,并对终端实现方案和主要技术指标进行了分析。该终端可以为我国海洋浮标通信提供一种高可靠的解决方案。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.