基于氮化硅陶瓷毛细芯的低温回路热管研究

利用氮化硅陶瓷多孔材料作为毛细芯设计了一种以乙烷为工质的低温回路热管样机, 并对其降温及传热性能进行了研究。试验结果表明,通过在蒸发器上施加4 W的热量, 这种低温回路热管能够在常温下实现启动,并能顺利实现降温;在降温过程中,通过不断增大加热功率,可以加快低温回路 热管的降温;当蒸发器的温度为190 K时,该样机可以稳定传输30 W的热量。     

热管散热器在大功率LED路灯中的应用研究

针对大功率LED路灯的热管散热器散热性能进行了实验和数值研究.首先,利用红外测温技术,对120 W大功率LED路灯灯壳及热管散热器表面温度进行了测量,测试结果表明,热管散热器温度分布较均匀,平均温度在38℃左右;热管散热技术是大功率LED路灯散热问题的有效解决办法.其次,建立相应的三维数学模型并求得数值解,数值解与实验结果符合较好,证明数学模型的正确性.最后根据数值计算结果,讨论了优化热管散热器散热性能的思路及方法.     

回路热管换热性能的实验研究

为研究回路热管(LHP)的换热性能,制作了简单的回路热管换热性能测试装置。采用不锈钢为回路热管的材料,500目铜丝网为吸液芯,实验研究了回路热管不同功率下对启动时间和热管热阻的影响。研究结果表明,回路热管的功率增大,启动时间越短,热阻也相应的减小;同时,回路热管冷凝器入口和储液室入口的温度在LHP启动后,会呈现相反的温度波动。研究结果为回路热管散热器的应用提供了理论依据和方便的测试手段。     

一种基于热管温控技术的红外抑制方法

针对高温物体的红外抑制方法,采用具有高导热特性的热管模块进行研究。理论分析了热管模块的技术特点,建立了热管模块的热传导模型,计算了不同功率的热管模块实现红外抑制的效能,搭建了热管模块原理验证试验模型,实际测试了热管模块的红外抑制效果。测试结果表明,辐射温度为140℃的物体经热管导热散热后辐射温度仅为65℃。     

大功率LED照明装置微热管散热方案分析

设计了一种新型的带有百叶窗的平板式大功率发光二极管(LED)照明装置。该装置采用高导热系数的铝基板作为多颗大功率LED的散热电路板,用0.4mm的铝片作为散热翅片,结合沟槽式微热管构成集发光与散热一体化的输入功率为21W的照明模组,该模组可根据照明亮度要求重构成不同功率的照明装置。对功率为144W的照明装置进行了理论分析与实验研究。根据理论计算,每个照明模组的发热量约为18W,每个照明模组的传热量约为47W;模拟结果表明,在环境温度为30℃,自然对流换热系数为10W/(m2·K)时,LED芯片最高结温Ta=75℃,而实验测得Ta=75.7℃。     

一种回路热管对大功率LED散热的研究

针对大功率LED散热能力较其它照明灯具差这一问题,研制了一种应用在多芯片大功率LED散热上的回路热管装置,并研究了热负荷、倾角等对热管的起动性、均温性和热阻等的影响。试验结果表明,所设计的热管散热器的热阻在0.48～1.47K/W之间;在蒸发器倾斜角为0°和30°时,蒸发器的均温性分别被控制在1.5℃和4.3℃以内。因此,将这种结构的热管应用在大功率LED散热系统中时,首先应该对蒸发器倾斜角度对系统散热性能的影响进行测试评估。     

大功率LED冷却用平板热管散热器的实验研究

对一种新型平板热管散热器冷却大功率LED芯片阵列进行实验研究。在自然对流冷却条件下,分析了平板热管散热器的启动特性、均温特性以及通电电流、倾角对其传热性能的影响。利用热电转换方法得到LED芯片的结温变化。实验结果表明:平板热管散热器的总热阻在0.3053～0.3425℃/W间,且散热器整体温度分布均匀合理,具有很强的散热能力;LED结温在47.9～59.0℃间,远低于110℃。     

基于热管散热的人功率LED热特性测量与分析

提出了一种新型结构的同路热管,建立了回路热管性能测试试验装置.在相同的测试条件下,研究了热负荷、倾角等对回路热管的起动特性和均温特性、热阻等传热性能的影响.试验结果表明,热管散热器的热阻在0.21 K/W～2.6 K/W之间,且整个散热器具有均匀的温度分布.与当前的LED散热器相比,这种结构的热管散热器具有散热效率高、结构紧凑、加工方便、热阻小、重量轻、成本低等特点,可以满足大功率LED散热的要求.     

LED简灯热管散热器的试验研究及性能评价

为获得基于自然对流的异型热管散热器用于LED筒灯的工作性能,研制了热管散热器试验件,并进行了试验研究。结果表明：热管散热器启动性能良好,启动时间约为33min;散热器具有较好的均温性能,40W时蒸发面最大温差为4．7℃;在试验条件下,热源表面最高温度不超过70℃;加热功率对接触热阻、扩散热阻和热管热阻基本无影响,而翅片换热热阻随加热功率的增加而减小。基于试验所得结果,并通过热阻网络分析,论证了异型热管散热器可满足LED筒灯散热的需求。     

并行多通道大功率LED回路热管散热器

为解决大功率LED散热问题,构造了一种一体化并 行多通道大功率LED回路热管散热器。利用水作为工质,在不同加热功率、不同倾斜角以及 不同充液比条件下对该新结构热管散热器的热性 能进行了研究。结果表明,这种新结构热管散热器不仅能使散热器上下底板处于均温状态, 而且当芯片加 热功率达到200W时,芯片加热面中心最高温度不超过71.8℃;倾斜角度对热管换热性能影响不大;在一 定加热功率范围内,新结构热管散热器的热阻随加热功率的增大而减小,当芯片加热功率达 到240W时, 热阻最小,最小可达0.19K/W。构造的一体化并行多通道大功率LED 回路热管散热器具有很好的传热性能,并提高了承载高热流密度的能力。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

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