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本文提出毫米FMCW 收发组件的设计模型。针对这类系统特有的1/f 噪声和FMAM 变换噪声,设计了一种新颖的外差型94GHz 和35GHz FMCW 收发组件。线性调频带宽1000MHz,发射功率20~50m W,目标检测灵敏度- 150dBc/Hz。该设计较常规的“零拍型”检测灵敏度改善20dB。对同等检测距离,可节省发射功率一个数量级以上。 相似文献
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介绍了X波段1.5W GaAs MMIC的设计,制作和性能测试,包括MESFET大信号模型的建立,电路CAD优化,DOE灵敏度分析及T型栅工艺研究等。微波测试结果为:在频率9.4 ̄10.2GHz下,输出功率大于32dBm,增益大于10dB。 相似文献
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研究了光纤放大器噪声和光纤四波混频(FWM)对级联光纤放大器的多通道传输系统性能的影响,对传输速率为1Gb/s和信道问题隔为10GHz的20路FSK直接检测和外差检测的系统,当信号在常规光纤中传输1000km后,中间信道的最小功率代价分别为0.9和0.38dB。对于色散位移光纤,最小功率代价分别为1.75和0.7dB。 相似文献
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阐述了光纤通信前置放大器的设计原理,分析了光接收机中PIN二极管和GaAsFET器件的信号模型和噪声模型,提取了放大器用GaAsFET器件的模型参数(包括大信号、小信号和噪声模型参数)。利用PSPICE程序对光前置放大器进行了模拟分析和优化设计,并实际制作了用于2.4Gb/s光纤通信的PIN-HEMT前置放大器。实测结果表明放大器3dB带宽达到DC~4.4GHz,增益为18±1dB;加入PIN二极管后的光接收模块的3dB带宽为DC~1.688GHz,满足了2.4Gb/s光纤通信的需要。 相似文献
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描述了以PHEMT为有源器件的8 ̄12GHz宽带低噪声单片电路的设计及制造,获得了满意的结果。其性能为f=8 ̄12GHz,Ga=17.4 ̄19.5dB,Fn=1.84 ̄2.20dB;f=8 ̄14GHz,Ga=17.4 ̄19.9dB,Fn=1.84 ̄1.5dB。 相似文献
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适于视频应用的高数据传输率集成CMOS收发机 总被引:1,自引:1,他引:0
这篇文章给出了一个5GHz CMOS射频收发机的设计方案。此设计采用0.18微米射频CMOS加工工艺,集合了最新IEEE802.11n的特性例如多输入多输出技术的专利协议以及其他无线技术,可提供应用在家庭环境中的实时高清电视数据的无线高速传输。设计频率涵盖了从4.9GHz到5.9GHz的ISM频带,每个射频信道的频宽为20MHz。收发机采用了直接上变频发射器和低中频接收器的结构。在没有片上校准的情况下,设计采用双正交直接上变频混频器,得到了超过35dB的镜像抑制。测试结果得到6dB接收机噪声系数以及在-3dBm输出功率时得到发射机EVM结果优于33dB。 相似文献
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基于混合微波集成电路技术(HMIC)设计了一种W波段小型化高频收发组件。该收发组件由固态发射机、环形器和接收机三部分组成。发射支路输入信号经过倍频放大后进入二选一开关,输出到天线自检口或经由环形器输出。为了实现高输出功率,该组件采用功率合成的设计思想,通过3 dB波导桥结构实现对两路功放的合成,解决了单个单片功率放大器的输出功率有限的问题。所设计的收发组件整体尺寸为125 mm×90 mm×26.5 mm。实测结果表明,在90~96 GHz工作频带范围内,遥测电压4.23 V。该收发组件的发射部分输出功率范围为33.6~35.4 dBm,开关隔离度大于110 dB;接收部分增益范围为30.2~33 dB,噪声系数小于6.5 dB。该组件具备良好的射频性能,同时实现了高集成度、大功率、高增益、高隔离度的要求。 相似文献
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主要介绍了一种用于机场异物探测雷达的W频段调频连续波(FMCW)收发前端的研究工作。基于波导T形接头的等效计算公式,对W频段波导合成电路进行了集中参数的电路建模,通过优化设计波导合成电路的参数,提高了波导合成电路的容差特性,解决了W频段波导功率合成电路加工精度要求高的问题,实现了W频段4路功率合成;采用低损耗的石英基材设计开发了微带薄膜滤波器技术,实现了W频段FMCW雷达接收前端的一体化集成设计;通过对低噪声放大器芯片键和金丝的匹配设计,实现了W频段收发前端的低噪声接收。最终实现的W频段FMCW收发前端的发射功率优于360 mW,接收机噪声系数优于5 dB。研制的收发前端为W频段FMCW雷达提供了一种有效的射频前端的解决方案。 相似文献
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主要介绍了一种用于机场异物探测雷达的W频段调频连续波( FMCW)收发前端的研究工作。基于波导T形接头的等效计算公式,对W频段波导合成电路进行了集中参数的电路建模,通过优化设计波导合成电路的参数,提高了波导合成电路的容差特性,解决了W频段波导功率合成电路加工精度要求高的问题,实现了W频段4路功率合成;采用低损耗的石英基材设计开发了微带薄膜滤波器技术,实现了W频段FMCW雷达接收前端的一体化集成设计;通过对低噪声放大器芯片键和金丝的匹配设计,实现了W频段收发前端的低噪声接收。最终实现的W频段FMCW收发前端的发射功率优于360 mW,接收机噪声系数优于5 dB。研制的收发前端为W频段FMCW雷达提供了一种有效的射频前端的解决方案。 相似文献
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V-band Low-noise Integrated Circuit Receiver 总被引:2,自引:0,他引:2
《Microwave Theory and Techniques》1983,31(2):146-154
A compact low-noise V-band integrated circuit receiver has been developed for space communication systems, The receiver accepts an RF input of 60-63 GHz and generates an IF output of 3-6 GHz. A Gunn oscillator at 57 GHz is phaselocked to a low-frequency reference source to achieve high stability and low FM noise. The receiver has an overall single sideband noise figure of less than 10.5 dB and an RF to IF gain of 40 dB over a 3-GHz RF bandwidth. All RF circuits are fabricated in integrated circuits on a Duroid substrate. 相似文献
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《Microwave Theory and Techniques》1977,25(4):294-318
A tutorial review of the basis for transmitter noise measurements shows that noise is best described and measured as AM and FM noise. The determination of RF spectrum is done by calculation after the AM and FM noise are known. The contribution of AM noise to RF spectrum shape is determined by the power spectral density shape of the AM noise. The contribution of FM noise to RF spectrum is to make the shape that of an RLC circuit resonant response rather than a delta function with a sideband structure. The measurement of AM noise is done with a direct detector diode. The measurement of FM noise for frequencies above 5 GHz is done with a discriminator based on a one-port cavity resonator. The measurement of FM noise below 5 GHz is done with an improved transmission line discriminator which is described in detail. Measurement of low-power low-noise signal sources is made posbible with an injection-locked oscillator for a preamplifier to the discriminator. The most widely used baseband analyzer is the constant bandwidth superhetdrodyne wave or spectrum analyzer. Most differences in measurement results are resolved by understanding the baseband analyzers. At least the baseband spectrum analysis of transmitter noise measurements can be automated with worthwhile savings in time and improvement of documentation. 相似文献
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An 18-GHz range frequency synthesizer is implemented in 0.13-mum SiGe BiCMOS technology as part of a 60-GHz superheterodyne transceiver chipset. It provides for RF channels of 56.5-64 GHz in 500-MHz steps, and features a phase-rotating multi-modulus divider capable of sub-integer division. Output frequency range from the synthesizer is 16.0 to 18.8 GHz, while the enabled RF frequency range is 3.5 times this, or 55.8 to 65.8 GHz. The measured RMS phase noise of the synthesizer is 0.8deg (1 MHz to 1 GHz integration), while phase noise at 100-kHz and 10-MHz offsets are -90 and -124 dBc/Hz, respectively. Reference spurs are 69 dBc; sub-integer spurs are -65 dBc; and combined power consumption from 1.2 and 2.7 V is 144 mW. 相似文献
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This paper describes a 4 GHz fractional-N frequency synthesizer for a 3.1 to 5 GHz IR-UWB transceiver.Designed in a 0.18μm mixed-signal & RF 1P6M CMOS process, the operating range of the synthesizer is 3.74 to 4.44 GHz. By using an 18-bit third-order ∑-△ modulator, the synthesizer achieves a frequency resolution of 15 Hz when the reference frequency is 20 MHz. The measured amplitude mismatch and phase error between I and Q signals are less than 0.1 dB and 0.8° respectively. The measured phase noise is -116 dBc/Hz at 3 MHz offset for a 4 GHz output.Measured spurious tones are lower than -60 dBc. The settling time is within 80 μs. The core circuit conupSigmaes only 38.2 mW from a 1.8 V power supply. 相似文献
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针对机载设备体积小、重量轻、功耗小等要求,采用射频电路小型一体化技术、高效率功率放大器技术、集成化快速AGC技术等,设计了一种L波段收发分时工作体制的收发信机。该收发信机外形尺寸为65 mm×65 mm×20 mm,重量仅130 g,功耗<6 W。其发射通道输出功率≥6 W,三阶互调≤-18 dBc;接收通道增益达到85 dB,噪声系数≤3.0 dB,动态范围≥65 dB。通过飞行试验验证,收发信机性能稳定,具有较强的实用性。 相似文献
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A Highly Stabilized GaAs FET Oscillator Using a Dielectric Resonator Feedback Circuit in 9-14 GHz 总被引:1,自引:0,他引:1
《Microwave Theory and Techniques》1980,28(8):817-824
A new type of highly stabilized GaAs FET oscillator using a dielectric resonator and a stabilization resistor in the feedback circuit has been developed. The oscillator fabricated with a microwave integrated circuit has a high external quality factor Q/sub ex/ for more than1000 with no hysteresis phenomena. The microwave characteristics of the GaAs FET oscillator has revealed 1) high efficiency of 20 percent with 70-mW output power at 11.85 GHz, 2) a wide tuning range more than1000 MHz, 3) a wide oscillation frequency from 9 to 14 GHz with same MIC pattern by using five dielectric resonators of different sizes, 4) a high-frequency stability as low as /spl plusmn/ 150kHz in the tempature range from -20 to + 60/spl deg/ C, and 5) low FM noise of 0.07 Hz/ /spl radic/Hz at off-carrier frequency of 100kHz. 相似文献