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1.
采用原边加箝位二极管的变换器工作在电流断续模式时,箝位二极管工作在硬关断状态,极易损坏,严重影响系统的可靠性。文章分析了该变换器的工作原理并提出变压器副边整流管串联尖峰抑制器且原边不加箝位二极管的设计方案,该尖峰抑制器在电流连续模式和电流断续模式都能够有效抑制寄生振荡,消除尖峰电压。文中给出新方案主要参数设计方法,并通过实验验证了所给出方案的有效性。  相似文献   

2.
《现代电子技术》2018,(2):44-47
IGBT的门极驱动电路影响IGBT的通态压降、开关时间、开关损耗、承受短路电流能力等,决定了IGBT的静态与动态特性。针对IGBT在开通和关断时,密勒效应对驱动的影响及其应对策略进行研究和分析。分析了密勒电容引起的寄生导通效应的4种应对策略,包括改变门极电阻,增加GE间电容,采用负压驱动以及有源密勒钳位技术,并分析了驱动电路中门极电阻对IGBT性能的影响。在此基础上,进行了实验对比,给出了实验分析结果。此外还对驱动与控制板的线缆连接要求进行了测试对比。实验结果表明,门极电阻的设置直接影响IGBT的开关性能,实际应用中需要综合考虑实际需求选择合适的门极电阻值来保证IGBT最优化地开通关断,密勒效应中的密勒电容对IGBT的开关性能影响非常大,驱动与控制板的线缆连接要求越短越好。  相似文献   

3.
箝位型二极管(TVS)是目前被广泛应用的瞬态电压抑制二极管。TVS在反向应用条件下,感受到高瞬态能量时能迅速由原来的高阻抗变到很低的导通值,把电压箝位到预定电压,从而有效地消除对敏感系统设备、元件的危害。双向性TVS可正负方向吸收瞬时脉冲大电流,把电压箝位到预定值。TVS可用于防雷击、防过电压、抗干扰、吸收浪涌功率等,是一种理想的保护器件。  相似文献   

4.
为解决中、大功率等级IGBT的可靠驱动问题,本文提出了驱动电路的关键参数设计方案。同时,在变流器极端工况下研究了IGBT的相关特性,提出了极端工况IGBT的保护措施,包括IGBT栅极电压应力防护、VCE电压应力抑制、过流与短路等工况的保护措施及工作原理。对电压应力抑制的关键方案:有源钳位、高级有源钳位、软关断等特性进行理论分析,并给出解决实际问题的应用电路。通过双脉冲试验验证了文中提出的相关理论的科学性以及给出的解决方案的可行性。  相似文献   

5.
IGBT串联应用时面临的最大难题是动态均压。本文研究了电压箝位控制方法,它将IGBT的集?射电压变化快速反馈至门极,改变门极驱动电压的大小,从而将集?射电压实时箝位于控制阈值之内,实现串联IGBT的动态均压。本文通过2个和8个IGBT串联的实验,验证了该方法的有效性。  相似文献   

6.
汪波  胡安  陈明  唐勇 《半导体技术》2011,(7):501-504
绝缘栅双极晶体管(IGBT)是一种性能优良的全控型电力电子器件,由于线路和器件内部分布电感的存在,关断时集电极电流的快速变化会感应产生一个较大的电压尖峰从而引起过电压击穿。分析了栅极结电容放电时间常数和拖尾电流对电压尖峰的影响,通过改变栅极驱动电阻和温度可以抑制电压尖峰。分析了电压尖峰引起过压击穿的失效机理以及失效模式,表明IGBT过压击穿引起失效的本质仍然是结温过高引起的热击穿失效。  相似文献   

7.
杨淼 《中国新通信》2015,(2):108-110
IGBT(绝缘栅双极型晶体管)缓冲电路对抑制IGBT开关过程中产生的尖峰电压具有重要作用。本文通过分析无损缓冲电路的原理及特点,结合原有RCD缓冲电路,探索研究了一种新的适用于IGBT逆变桥的无损缓冲电路,并采用Saber软件对两种电路进行了仿真分析,对比比较了两种缓冲吸收电路的优缺点。仿真结果验证了新无损缓冲电路抑制IGBT关断过电压的可靠性。  相似文献   

8.
集成门极换向型晶闸管(IGCT)的优良性能使其适合于实现高—高方式的高压变频调速装置。本文主要应用IGCT中点箝位电压型逆变器的高压变频器进行了仿真研究,搭建了IGCT子电路模型,装置采用IGCT作为电子开关的硬开关的变流器中,换流回路的总电感应尽可能地小,结构尽可能地紧凑,降低杂散电感。仿真结果可以看出安装Rc关断吸收回路后对于抑制关断时IGCT的端部过电压效果显著,IGCT端部最大峰值电压降低了39%,进而增强了设备的安全性与可靠性,并且所安装的RC额定值小,体积小,成本低,这种高压变频器具有很好的性能及可靠性。  相似文献   

9.
陈材  陈宇  裴雪军  康勇 《电力电子》2010,(3):66-69,65
由于线路杂散电感的存在,IGBT(insulated gate bipolar transistor)开通关断时将在开关管两端产生电压尖峰。为了研究其的影响,需要对线路杂散电感进行抽取。为此,本文提出一种基于IGBT开关瞬态电压、电流波形的杂散参数抽取方法。在IGBT的开通过程中,考虑了IGBT反并联二极管的反向恢复过程,井且利刖加该过程引起电压尖峰进行线路的杂散电感的抽取;在IGBT的关断过程中,通过对关断波形进行了更详细的分析,给出更精确的线路杂散电感的抽取方法。最后,将该方法应用于一台75kVA的单相逆变器;实验结果证明了本方法的有效性与正确性。  相似文献   

10.
提出一种利用多谐振实现开关管软开关的全桥Boost变换器.其将变压器漏感作为谐振电感,利用电感与电容谐振实现桥臂开关管和箝位开关管的软开关.桥臂开关管工作于零电流开通与零电压关断状态.有源箝位电路既可抑制变换器工作时可能出现的振荡电压,又可将箝位电容吸收的能量返还回主电路,且箝位开关管工作于零电压开通与零电流关断状态.最后利用硬件实验验证了其多谐振软开关特性.  相似文献   

11.
王强  陈俊  王天施  刘晓琴 《电子学报》2020,48(7):1403-1406
为使三相桥式整流器实现节能运行,提出了一种节能型三相桥式零电流开关整流器拓扑结构,在各相桥臂上的辅助谐振电路处于工作状态时,整流器的开关器件能完成零电流软关断.三相桥式整流器通常以绝缘栅双极型晶体管(Insulated Gate Bipolar Transistor,IGBT)作为开关器件,实现零电流软关断能消除IGBT拖尾电流产生的关断损耗.分析了电路工作过程,在三相3kW样机上的实验结果表明开关器件实现了零电流软切换.因此,该拓扑结构可实现以IGBT作为开关器件的三相桥式整流器的节能运行.  相似文献   

12.
一种绝缘栅双极晶体管模块在做反向偏置安全工作区测试时,器件在较低的关断电流下就发生了损坏。失效分析显示失效区的位置靠近栅极条区。模拟显示失效区处元胞结构并非对称,而正常元胞结构是对称的,由此造成了该处元胞的闩锁电流密度比对称结构元胞的闩锁电流密度低。因此,元胞结构的一致性不好是RBSOA关断电流低的原因。通过修改版图设计,使工作区元胞结构一致。对改版后的芯片封装后进行RBSOA测试,结果显示安全关断电流有明显提高。  相似文献   

13.
基于有源电力滤波器的IGBT驱动及保护研究   总被引:1,自引:0,他引:1  
介绍了采用M57962L设计的有源滤波器中绝缘栅场效应晶体管(IGBT)驱动器的驱动原理和电路特点,对IG—BT的栅极驱动特性、栅极串联电阻进行了探讨,给出过流保护和过压吸收的有效方法。样机试验证明了此种设计方案可靠、有效。  相似文献   

14.
This paper addresses the problem of turn on performances of an insulated gate bipolar transistor (IGBT) that works in hard switching conditions. The IGBT turn on dynamics with an inductive load is described, and corresponding IGBT turn on losses and reverse recovery current of the associated freewheeling diode are analysed. A new IGBT gate driver based on feed-forward control of the gate emitter voltage is presented in the paper. In contrast to the widely used conventional gate drivers, which have no capability for switching dynamics optimisation, the proposed gate driver provides robust and simple control and optimization of the reverse recovery current and turn on losses. The collector current slope and reverse recovery current are controlled by means of the gate emitter voltage control in feed-forward manner. In addition the collector emitter voltage slope is controlled during the voltage falling phase by means of inherent increase of the gate current. Therefore, the collector emitter voltage tail and the total turn on losses are significantly reduced. The proposed gate driver was experimentally verified and compared to a conventional gate driver, and the results are presented and discussed in the paper.  相似文献   

15.
Modeling the [dV/dt] of the IGBT during inductive turn off   总被引:1,自引:0,他引:1  
Insulated gate bipolar transistor (IGBT)-based pulsewidth modulation (PWM) inverters are commonly used in inductive load circuits such as motor control. During clamped inductive load turn off of the IGBT, high-power losses occur during two phases. Due to the large inductive motor load, the voltage across the IGBT rises to the bus voltage while carrying the full-rated current. In the second phase, the current decreases as the IGBT goes into its forward blocking mode. In this paper, the turn-off process during the first phase is analyzed in detail for the first time. A simple analytical model has been derived, based upon the initial steady-state minority carrier distribution, which allows predicting the rate of rise of the voltage during this time period where the collector current remains constant. The predictions of the analytical model are in excellent agreement with results obtained from two-dimensional (2-D) numerical simulations over a broad range of minority carrier lifetime values. This analytical model provides a good estimate (within 10%) of the power losses incurred during the first phase of turn off  相似文献   

16.
一种新型的快速关断绝缘栅双极晶体管   总被引:2,自引:2,他引:0  
胡浩  陈星弼 《半导体学报》2012,33(3):034004-4
本文提出了一种新型的快速关断绝缘栅双极晶体管。在关断的时候,器件用一个自己驱动的P型晶体管来短路发射极PN结。在没有引入如折返电流电压曲线等副作用和工艺困难的情况下,器件实现了低导通压降和快速关断。数值仿真表明关断时间从120ns降到12纳秒,同时并没有增加导通压降。  相似文献   

17.
《Microelectronics Reliability》2014,54(11):2423-2431
A novel method is presented for online estimation of the junction temperature (Tj) of semiconductor chips in IGBT modules, based on evaluating the gate-emitter voltage (Vge) during the IGBT switch off process. It is shown that the Miller plateau width (in the Vge waveform) depend linearly on the junction temperature of the IGBT chips. Hence, a method can be proposed for estimating the junction temperature even during converter operation – without the need of additional thermal sensors or complex Rth network models. A measurement circuit was implemented at gate level to measure the involved time duration and its functionality was demonstrated for different types of IGBT modules. A model has been proposed to extract Tj from Vge measurements. Finally, an IGBT module with semiconductor chips at two different temperatures has been measured using Vge method and this method was found to provide the average junction temperature of all the semiconductor chips.  相似文献   

18.
The aim of this paper is to discuss new solutions in the design of insulated gate bipolar transistor (IGBT) gate drivers with advanced protections such as two-level turn-on to reduce peak current when turning on the device, two-level turn-off to limit over-voltage when the device is turned off, and an active Miller clamp function that acts against cross conduction phenomena. Afterwards, we describe a new circuit which includes a two-level turn-off driver and an active Miller clamp function. Tests and results for these advanced functions are discussed, with particular emphasis on the influence of an intermediate level in a two-level turn-off driver on overshoot across the IGBT.  相似文献   

19.
A current source PWM inverter with actively commutated SCRs   总被引:1,自引:0,他引:1  
Conventional SCR based current source inverters suffer from poor waveform quality due to six step switching. Pulse width modulated current source inverters typically require gate turn off devices with reverse voltage blocking capability which have limited their application. In this paper, a new pulse width modulated current source inverter topology using one gate turn off switch and six SCRs is presented. The converter uses active commutation to realize pulse width modulation in a conventional SCR based current source inverter. Modulation techniques for the proposed inverter, simulation and experimental results are described in the paper. This topology is suitable for high performance, high power applications  相似文献   

20.
王瑞 《现代电子技术》2014,(17):122-124
绝缘栅双极晶体管(IGBT)因具备双极和功率MOSFET两种特性的独特优势,在超高电压电力传输、新能源的开发利用等方面获得广泛应用。但目前国内IGBT发展滞后,且其功耗性能及优化一直是国际上功率器件领域内研究的热点和难点。在先前研究的IGBT模型的基础上,对PSpice软件仿真所得的实验数据利用一种新的计算方法,对IGBT的静态功耗和动态功耗进行了定量计算,并与实际IGBT的功耗值进行对比。结果表明,两者的数据基本一致,同时对IGBT功耗的优化进行了探讨研究。  相似文献   

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