织构对铟凸点剪切强度的影响

制作了2种形式的铟凸点：即直接蒸发沉积的铟柱和将铟柱回流得到的铟球。同时对比了铟柱和铟球2种凸点的剪切强度，测试结果表明铟球剪切强度为5.6MPa，铟柱的剪切强度为1.9MPa，前者约为后者的2.9倍。对铟凸点微观结构的X光衍射分析发现：铟柱剪切强度低是织构弱化所致；铟球剪切强度高是由于回流破坏了铟柱的理想（101）丝织构模式，从而提高了铟球的剪切强度。     

Boron retarded diffusion in the presence of indium or germanium

Experimental results of germanium (Ge) and indium (In) preamorphization by ion-implantation show that the diffusion of boron (B) is retarded by the presence of Ge or In and that this retardation is more important than the preamorphization (dechanneling) effect. Result shows that In retards B diffusion more than Ge and the retardation effect due to In becomes greater with increasing retained dose of In. Larger In doses cause larger strain, which results in more B being tied up in immobile clusters near the surface. In order to achieve adequate retained dose of In, the implanted dose of In must be increased to 5/spl times/10/sup 15/ cm/sup -2/. After anneal, the junction depth (at 10/sup 18/ cm/sup -3/) is reduced from 628 /spl Aring/ in the control wafer (no In co-implant) to 480 /spl Aring/.     

Structural and electrical properties of co-evaporated In, Ga-rich CIGS thin films

The CIGS thin films are prepared by co-evaporation of elemental In, Ga and Se on the substrates of Mo-coated glasses at400℃ followed by co-evaporation of elemental Cu and Se at 550℃. We study the structural and electrical properties usingXRD, XRF and Hall effect measurements. In general, Cu(In,Cra)5Se8 phase exists when Cu/(In Ga) ratio is from 0.17 to0.27, Cu(In,Ga)3Se5 phase exists for Cu/(In Ga) ratio between 0.27 and 0.41, Cu2(In,Ga)4Se7 and Cu(In,Ga)2Se3.5 phasesexist for Cu/(In Ga) ratio between 0.41 and 0.61, and OVC(or ODC) and CuIn0.7Ga0.3 Se2 phases exist when Cu/(In Ga)ratio is from 0.61 to 0.88. With the increase of Cu/(In Ga) ratio, the carrier concentrations of the films gradually increase,but the electrical resistivity gradually decreases.     

Indium out-diffusion from silicon during rapid thermal annealing

The out-diffusion of indium (In) from In-implanted silicon (Si) samples that includes bare Si, samples with an oxide-cap layer, nitride-cap layer, and nitride/oxide/Si sandwiched samples, is investigated. The dose loss of In with respect to different implant energies, doses, and soak times during rapid thermal annealing (RTA) is quantified. Experimental results of bare Si samples show that over 90% of In out-diffusion happens within 1 sec of soak time in the RTA process. In the capped samples, In rapidly diffuses through the oxide layer and stops at the nitride/oxide interface. In gets piled up at the interface of Si/oxide and oxide/nitride, and nitride very efficiently prevents In out-diffusion from the oxide layer out to the nitride layer. In addition, In gets more segregated in the Si surface in the presence of boron.     

CIGS薄膜(InGa)2Se3-富Cu-富In(Ga)的演变

采用三步共蒸发工艺顺序沉积铜铟镓硒(CuInGaSe2,CIGS)薄膜.薄膜的厚度、组份、晶相结构分别由台阶仪、X射线荧光光谱仪(XRF)和X射线衍射仪(XRD)来表征.在(In,Ga)2Se3预制层-富Cu相的演变过程中,依次发生以下相变:Cu(In,Ga)5Se8、Cu(In,Ga)3Se5、Cu2(In,Ga)4Se7(或Cu(In,Ga)2Se3.5)、Cu(In,Ga)Se2(液相CuxSe).在富Cu相-富In(Ga)相的演变过程中,依次发生以下相变:Cu(In,Ga)Se2(液相CuxSe)、Cu2(In,Ga)4Se7(或Cu(In,Ga)2Se3.5)、Cu(In,Ga)3Se5、Cu(In,Ga)5Se8.对这两个演变过程中薄膜的生长机理和结构特性进行了讨论.     

Soldering reactions between In49Sn and Ag thick films

The interfacial reactions between In49Sn solders and Ag thick films at temperatures ranging from 200°C to 350°C have been studied. The intermetallic compound formed at the Ag/In49Sn interface is Ag₂In enveloped in a thin layer of AgIn₂. Through the measurement of the thickness decrease of Ag thick films, it has been determined that the reaction kinetics of Ag₂In has a linear relation to reaction time. Morphology observations indicated that the linear reaction of Ag₂In was caused by the floating of Ag₂In into the In49Sn solder as a result of the In49Sn solder penetrating into the porous Ag thick film. A sound joint can be obtained when a sufficient thickness of the Ag thick film (over 19.5 μm) reacts with the In49Sn solder. In this case, the tensile tested specimens fracture in the In49Sn matrix.     

CdO对In2O3电导和气敏性能的影响

为探索新型CdO-In2O3材料的气敏性能,用化学共沉淀法制备了CdO掺杂的In2O3微粉,研究了CdO掺杂对In2O3电导和气敏效应的影响。结果表明CdO和In2O3间能形成有限固溶体In2-CdxO3(0≤x≤0.02);In1.98Cd0.02O3x的电导比纯In2O3小得多;900℃下热处理4h所得的x(CdO)为2%的In2O3传感器在183℃工作温度下,对45μmol·L–1C2H5OH的灵敏度达276、响应–恢复时间只有3s和180s。有望开发为一类新型酒敏材料。     

Characterizations of GaN films grown with indium surfactant by RF-plasma assisted molecular beam epitaxy

A small indium flux was used as a surfactant during the growth of gallium nitride by rf-plasma assisted molecular beam epitaxy. The effects of the In surfactant on the optical and structural properties of undoped GaN were studied by photoluminescence (PL), X-ray diffraction, atomic force microscopy (AFM), and Rutherford backscattering spectrometry (RBS). PL studies show that the use of In surfactant is beneficial to the reduction of deep-level defects. The X-ray rocking curves demonstrate a 20% decrease in the full width at half maximum value for the films grown with In surfactant. AFM studies show that the root mean squared surface roughness for films grown with and without In surfactant are 5.86 and 6.99 nm respectively indicating significant improvement in surface morphology. The improved surface morphology is attributed to the enhanced 2-dimensional growth promoted by the application of In surfactant. RBS studies show that the χ_min values along [0 0 0 1] direction are 2.06% and 2.16% for the samples grown with and without In surfactant respectively. Off-normal ion channeling studies were performed to further investigate the effects of In surfactant on the crystallinity. It is found that the number density of stacking faults is smaller for the sample grown with In surfactant compared to the one grown without In surfactant. However, defect analysis shows that dislocations are found in the sample grown with In surfactant in contrary to the one grown without In surfactant. We speculate that there is a thickness limit of GaN grown with In surfactant and the thickness of our samples exceed this limit, leading to the presence of dislocation.     

MOOC制作技术标准研究

本文对MOOC的发展现状做出了介绍.针对MOOC中存在的问题,本文提出了课程评定、课程监督和课程反馈这三种解决方案.除此之外,本文还对影响课程的小细节做出了介绍.     

MOCVD脉冲生长对InGaN太阳能电池材料的影响

通过对InGaN三元合金的生长方式做对比,发现在相同条件下,因常规生长过程中反应室In的浓度更高,生长出的InGaN中In组分更高。但是由于预反应的原因晶体质量较差,而脉冲生长由于源的分时输运,大幅减小了预反应的发生,提高了晶体质量。但由于生长时反应室In原子浓度变小,In的组分会降低,也会减小In滴的析出。     

Kinetics of the Pd/In thin-film bilayer reaction: Implications for transient-liquid-phase wafer bonding

The kinetic behavior of the Pd/In bilayer reaction is analyzed, with emphasis on the effect of nanometer-scale diffusion barriers at the Pd/In interface. It is shown that the Pd/In reaction proceeds rapidly and without a discernable incubation period at temperatures below 200 C if the Pd/In interface is nominally free of either contamination or intentionally-deposited intervening layers. Air exposure of the Pd surface prior to In deposition is sufficient to delay the onset of the reaction to produce the intermetallic phase by PdIn₃ for several minutes at 200 C. This incubation period can be further controlled by deposition of a nanometer-scale Ti layer onto the Pd prior to air exposure and In deposition. The implications of these results for the design of transient-liquid-phase waferbonding processes based on Pd−In are discussed.     

Microstructural Evolution of Sn-Ag-Sb Solder with Indium Additions

The effects of 1 wt.%, 5 wt.%, and 10 wt.% additions of indium (In) on the microstructure and compound morphology of Sn-Ag-Sb lead-free solder joints␣were examined. The results showed that In prompts the formation of Ag₃(Sn,In), Ag₂(In,Sn), and InSb compounds within the solder matrix. As the amount of In was increased, the Sn atoms in the Ag₃Sn compound were gradually replaced by In atoms, prompting a transformation from Ag₃Sn to Ag₃(Sn,In) and finally to Ag₂(In,Sn). This transformation occurs more readily under high-temperature conditions. The Ag₂(In,Sn) compound formed in Sn-Ag-Sb-xIn/Cu solder joints was found to have either a leaf-like morphology or an antler-like morphology. Finally, with In additions greater than 5 wt.%, the Cu₆Sn₅ interfacial compounds in the solder/Cu joints transformed into Cu₆(Sn,In)₅.     

Structural and electrical properties of co-evaporated In,Garich CIGS thin films

The CIGS thin trims are prepared by co-evaporation of elemental In, Ga and Se on the substrates of Mo-coated glasses at 400℃ followed by co-evaporation of elemental Cu and Se at 550℃. We study the structural and electrical properties using XRD, XRF and Hall effect measurements. In general, Cu（In,Ga）sSes phase exists when Cu/（In＋Ga） ratio is from 0.17 to 0.27, Cu（In,Ga）3Se5 phase exists for Cu/（In＋Ga） ratio between 0.27 and 0.41, Cu2（in,Ga）4Se7 and Cu（In,Ga）2Se3.5 phases exist for Cu/0n＋Ga） ratio between 0.41 and 0.61, and OVC（or ODC） and CuIn0.7Ga0.3Se2 phases exist when Cu/（In＋Ga） ratio is from 0.61 to 0.88. With the increase of Cu/（In＋Ga） ratio, the carrier concentrations of the films gradually increase, but the electrical resistivity gradually decreases.     

Raman Scattering in GaxIn1-xP and (AlxGa1-x)0.51In0.49P Alloys

Raman scattering spectroscopy is applied to investigate the phonon modes in GaxIn1-xP (x=0.52) and (AlxGa1-x)0.51In0.49P (x=0.29) alloys. Two-mode behavior in GaxIn1-xP and three-mode behavior in (AlxGa1-x)0.51In0.49P are observed. In ordered GaxIn1-xP, we clearly distinguish the TO1(GaP-like) mode and the splitting of LO1(GaP-like) and LO2 (InP-like) modes, which is believed to be the result of superlattice effect of ordering, and the LO1 LO2 mode, which is observed for the first time. In addition to the b/a ratio, it‘s found that the relative intensity of the FLA and the LO1 LO2 modes also corresponds to the degree of order. The TO1 and the splitting of LO1 and LO2 devote together to the reduction of the “valley depth“. In (AlxGa1-x)0.51In0.49P, the doubling of FLA is observed. Due to the influence of Al composition, the GaP-like LO mode becomes a shoulder of the InP-like LO mode. The unresolved Raman spectra indicate the existence of ordered structure in (AlxGa1-x)0.51In0.49P alloys.     

电力电子装置的EMC设计

为了保证电力电子装置具有良好的电磁兼容性,在产品的设计初期就应当进行EMC设计,这时所花费的代价最低.本文分析了电力电子装置产生电磁干扰的三个要素,提出了针对性的EMC抑制措施,从系统接地、隔离、合理的结构布局和布线、屏蔽、滤波方面进行了EMC设计的分析,对电子设备的电磁兼容性设计提供了一定的参考方法.     

In0.53Ga0.47As/In0.52Al0.48As雪崩光电二极管的数值模拟研究

建立了SACM型In0.53Ga0.47As/In0.52Al0.48As雪崩光电二极管(APD)的分析模型,通过数值研究和理论分析设计出高性能的In0.53Ga0.47As/In0.52Al0.48As APD。器件设计中,一方面添加了In0.52Al0.48As势垒层来阻挡接触层的少数载流子的扩散,进而减小暗电流的产生;另一方面,雪崩倍增区采用双层掺杂结构设计,优化了器件倍增区的电场梯度分布。最后,利用ATLAS软件较系统地研究并分析了雪崩倍增层、电荷层以及吸收层的掺杂水平和厚度对器件电场分布、击穿电压、IV特性和直流增益的影响。优化后APD的单位增益可以达到0.9 A/W,在工作电压(0.9 Vb)下增益为23.4,工作暗电流也仅是纳安级别(@0.9 Vb)。由于In0.52Al0.48As材料的电子与空穴的碰撞离化率比InP材料的差异更大,因此器件的噪声因子也较低。     

In：Fe：Cu：LiNbO_3晶体光全息存储性能的研究

采用提拉法生长了In：Fe：Cu：LiNbO3晶体,测试了晶体的紫外可见光谱、红外吸收光谱。利用二波耦合方法测试了晶体的响应时间、最大衍射效率、计算晶体的光折变灵敏度。结果表明,随In3＋离子浓度的增加,在In3＋浓度较低时,In：Fe：Cu：LiNbO3晶体紫外可见光吸收边发生紫移,而红外吸收峰3 482cm-1位置基本不变,但浓度达到阈值时,紫外可见光吸收边相对于低浓度发生红移,而红外吸收峰向高波数方向移动;In3＋浓度增加时,响应时间变短,最大衍射效率下降,晶体存储灵敏度提高。     

掺碳氧化铟薄膜的铁磁性研究

采用磁控溅射法在Si(100)衬底上制备了掺碳氧化铟(In2O3:C)薄膜,溅射过程分别在衬底温度为室温和550℃的条件下进行。通过测试所制In2O3:C薄膜的XRD谱和磁化曲线,研究了In2O3:C薄膜的结构和铁磁性能,并探讨了其铁磁性的起源。结果显示,随着含碳量的增加,In2O3:C薄膜的饱和磁化强度先增大后减小;此外,氧空位缺陷浓度高的样品其铁磁性也更强,这表明氧空位缺陷与In2O3:C薄膜的铁磁性起源有直接的关系。     

InP基功率HEMT结构材料分子束外延生长研究

从 3个层面研究了分子束外延 Al0 .48In0 .52 As/ Ga0 .47In0 .53As/ In P功率 HEMT结构材料生长技术。首先 ,通过观察生长过程的高能电子衍射 (RHEED)图谱 ,确立了 Ga0 .47In0 .53As/ In P结构表面层的 MBE RHEED衍射工艺相图 ,据此生长的单层 Si-doped Ga0 .47In0 .53As(40 0 nm) / In P室温迁移率可达 6960 cm2 / V· s及电子浓度 1 .3 3 E1 7cm- 3。其次 ,经过优化结构参数 ,低噪声 Al0 .48In0 .52 As/ Ga0 .47In0 .53As/ In P HEMT结构材料的 Hall参数达到μ30 0 K≥ 1 0 0 0 0 cm2 / V· s、2 DEG≥ 2 .5 E1 2 cm- 2 。最后 ,在此基础之上 ,降低 spacer的厚度、在 Ga0 .47In0 .53As沟道内插入 Si平面掺杂层并增加势垒层的掺杂浓度获得了功率 Al0 .48In0 .52 As/ Ga0 .47In0 .53As/ In PHEMT结构材料 ,其 Hall参数达到μ30 0 K≥ 80 0 0 cm2 / V· s、2 DEG≥ 4 .0 E1 2 cm- 2 。     

基于AMBE2000的新型无线同播系统

在无线多通道语音通信中,距离长短使各接收机接收信号的时间不一,同步输出需要精确的延时。介绍一种新型的基于AMBE2000和AD73311的高质量语音同步通信系统的设计与实现。该系统能够在2.0～2.4kb/s的低比特速率产生高话音质量,实现最小步长为1us的输出延时,达到多路同步传输效果。因此,该系统可以广泛应用于软件无线电,多模式电台及多路广播等场合。