砷化镓衬底上螺旋电感的建模和分析

针对砷化镓(GaAs)衬底上螺旋电感提出了一种改进形式的集总参数等效电路模型,该等效电路模型能很好地表征螺旋电感的高频效应.同时,应用电磁场全波分析方法对螺旋电感进行仿真,并分析各参数对电感性能的影响.从得到的散射参数中提取出有效电感、Q值和自谐振频率.基于参数优化方法提取等效电路模型中各元件值,并利用曲线拟合技术给出其相应的闭合表达式.这些表达式可用于射频和微波集成电路的设计,从而提高电路设计的性能和效率.     

基于改进1-π拓扑结构的螺旋电感可扩展模型

随着射频集成电路空前发展,电感作为射频电路中重要无源器件应用越来越广.目前其仿真模型应用频率范围较窄并且仿真结果与测试结果拟合较差.本文提出了基于0.13μm SOI CMOS工艺的片上螺旋电感修改模型.模型采用了1-π等效电路,包含有表征衬底涡流的RL并联网络并且改进了由趋肤效应引起的金属线圈中涡流的表征.利用数理统计中的回归分析方法,得到扩展模型参数的表达式.制备了13种不同尺寸的片上螺旋电感用于验证模型.本文提出的方法,对不同尺寸的电感在频率达到自谐振频率以上的行为提供了更好的电路解释.     

微波LTCC内埋置电感设计与参数提取

采用单π拓扑结构建立LTCC内埋置电感等效电路模型,并利用此模型来提取有效参数及各种寄生参数;采用相对介电常数为7.8、介质损耗为0.0015的微波陶瓷材料,以及银作为内电极,设计出400 MHz频率下大小为6.6 nH的LTCC内埋置螺旋电感,自谐振频率达2.2 GHz,最大Q值为50.2.     

基于改进型单π和双π拓扑结构的螺旋电感可缩放模型的建模与比较

本文针对改进型的单π 和双π等效电路模型,建立了两个用于片上螺旋电感建模的可缩放模型。两个可缩放模型中的所有元件均由与物理尺寸相关的方程表示,且均能准确表征射频螺旋电感的性能。通过等效电路和参数提取的复杂性、缩放规则以及两个可缩放模型的准确性等方面,对单π和双π 的可缩放模型进行了对比。这两个可缩放模型的准确性通过一批具有不同感值、圈数和半径,基于0.18-μm 1P6M RF CMOS工艺的电感进行了验证,结果表明在低频到自谐振频率频段内,测试和仿真结果拟合良好。     

CMOS RFIC平面螺旋差分变压器参数化等效电路建模

对现今常用的八边形CMOS RFIC平面螺旋差分变压器进行了参数化的2-π集总参数等效电路建模.所建模型包含随频率变化的各种损耗效应,各元件值均可根据工艺参数和器件几何尺寸以参数化的解析表达式得出.将电路仿真值与ADS Momentum器件仿真值进行对比,两者在DC～20 GHz谐振点前的频率范围内都得到了较好的拟合效果.在此基础上,对同样结构的巴仑也进行了建模和仿真.从仿真结果分别得出两者符合实际应用需要的频段.     

石墨烯片上螺旋电感的射频建模和参数提取

基于物理原理,对石墨烯螺旋电感提出了一种改进的等效电路模型,该模型在传统π模型的串联支路中增加了RC并联网络.并结合分析法和优化法,对此模型提出了一种参数提取方法.结果表明,在1～40 GHz频率范围内,测试所得S参数和模型仿真所得S参数能够高度地吻合.     

石墨烯片上螺旋电感的射频建模和参数提取（英文）

基于物理原理,对石墨烯螺旋电感提出了一种改进的等效电路模型,该模型在传统π模型的串联支路中增加了RC并联网络.并结合分析法和优化法,对此模型提出了一种参数提取方法.结果表明,在1～40 GHz频率范围内,测试所得S参数和模型仿真所得S参数能够高度地吻合.     

一种基于LTCC技术的螺旋电感带通滤波器

本文提出一种新型的基于低温共烧陶瓷技术(LTCC)的螺旋电感带通滤波器.滤波器的设计是利用螺旋电感的自谐振和谐振单元间的电磁耦合来实现.通过HFSS仿真和等效电路分析,对滤波器结构进行了优化分析.这种滤波器具有体积小.结构布局灵活的优点,可以很好的满足器件埋置的要求.     

超宽带锥形电感特性研究

锥形螺旋电感是一种新型电感,在较宽的频带内有良好的一致性,在毫米波电路和光载无线通信系统（RoF Radio-over-Fiber）中有广泛的应用.本文对锥形螺旋电感感值、螺旋电感长度、直流电阻的计算方法进行了研究,给出了精确计算方法,其中,电感值误差在10.2%以内,直流电阻误差在6.5%以内;对锥形空心螺旋电感微波特性进行研究,提出了一种等效模型,该模型拟合计算结果与实测曲线有较好的一致性,使用该模型给出了螺旋电感宽带特性的详细理论推导,同时利用该模型首次对锥形螺旋电感的宽带特性进行了直观解释;最后,将绕制参数对电感微波性能的影响进行分析,引入单位长度电感量参数α和电感量-频率参数β,可对超宽带锥形电感微波特性进行优化,对某些特性进行快速优化.     

硅衬底上射频集成电感研究

在分析硅衬底上射频螺旋电感物理模型的基础上,从几何参数、工艺参数及电感组成形式考虑,用模拟软件ASITIC(Analysis and Simulation of Spiral Inductors and Transformers for Ics)对影响电感值和Q值及谐振频率的各参数进行全面详尽的模拟,得出了几条实用的设计原则且用此模拟方法与所得结论均可有效地指导射频集成电路中集成电感的设计。     

Frequency-independent equivalent-circuit model for on-chip spiral inductors

A wide-band physical and scalable 2-/spl Pi/ equivalent circuit model for on-chip spiral inductors is developed. Based on physical derivation and circuit theory, closed-form formulas are generated to calculate the RLC circuit elements directly from the inductor layout. The 2-/spl Pi/ model accurately captures R(f) and L(f) characteristics beyond the self-resonant frequency. Using frequency-independent RLC elements, this new model is fully compatible with both ac and transient analysis. Verification with measurement data from a SiGe process demonstrates accurate performance prediction and excellent scalability for a wide range of inductor configurations.     

Equivalent circuit for broadband modelling of on-chip spiral inductors up to millimetre-wave frequencies

A single-stage expandable equivalent circuit is proposed to model an on-chip spiral inductor up to several times its first self-resonant frequency. The equivalent circuit adopts a modified T-section network configuration to achieve an extremely large bandwidth. The modelled results for a series of round spiral inductors fabricated with different turn numbers on InGaAs substrate demonstrate good agreement with measured results over a measurement frequency range up to 50 GHz.     

A closed-form integral model of spiral inductor using the Kramers-Kronig relations

In this letter, a closed-form integral model is presented for the rectangular micromachined spiral inductor. The Kramers-Kronig relations provide an elegant theory to describe the inductor behavior without having complicated geometric analysis. Simulation and measurement results validate that the model can provide satisfactory prediction to the inductance of on-chip freely-suspended spiral inductors. Meanwhile, unlike conventional Greenhouse-based formulations, the self-resonant frequency of inductor can be predicted using the integral model.     

Scalable modeling and comparison for spiral inductors using enhanced 1-π and 2-π topologies

Two different scalable models developed based on enhanced 1-π and 2-π topologies are presented for onchip spiral inductor modeling.All elements used in the two topologies for accurately predicting the characteristics of spiral inductors at radio frequencies are constructed in geometry-dependent equations for scalable modeling.Then a comparison between the 1-π and 2-π scalable models is made from the following aspects:the complexity of equivalent circuit models and parameter-extraction procedures,scalable rules and the accuracy of scalable models.The two scalable models are further verified by the excellent match between the measured and simulated results on extracted parameters up to self-resonant frequency (SRF) for a set of spiral inductors with different L,R and N,which are fabricated by employing 0.18-μm 1P6M RF CMOS technology.     

Micromachined high-Q inductors in a 0.18-μm copper interconnectlow-k dielectric CMOS process

On-chip spiral micromachined inductors fabricated in a 0.18-μm digital CMOS process with 6-level copper interconnect and low-K dielectric are described. A post-CMOS maskless micromachining process compatible with the CMOS materials and design rules has been developed to create inductors suspended above the substrate with the inter-turn dielectric removed. Such inductors have higher quality factors as substrate losses are eliminated by silicon removal and increased self-resonant frequency due to reduction of inter-turn and substrate parasitic capacitances. Quality factors up to 12 were obtained for a 3.2-nH micromachined inductor at 7.5 GHz. Improvements of up to 180% in maximum quality factor, along with 40%-70% increase in self-resonant frequency were seen over conventional inductors. The effects of micromachining on inductor performance was modeled using a physics-based model with predictive capability. The model was verified by measurements at various stages of the post-CMOS processing. Micromachined inductor quality factor is limited by series resistance up to a predicted metal thickness of between 6-10 μm     

Frequency-Independent Asymmetric Double-$pi $Equivalent Circuit for On-Chip Spiral Inductors: Physics-Based Modeling and Parameter Extraction

We present a frequency-independent compact model for silicon on-chip spiral inductors with an asymmetric double-$pi $equivalent circuit incorporating high-order parasitics such as skin effect and proximity effect. A set of partition factors for parameter ratios between the input and output segments has been introduced and derived from physical analysis to characterize the non-symmetrical feature of the inductor. A novel approach to extracting the model parameters is also developed based on measured$S$-parameters. As demonstrated for a series of inductors with different geometries fabricated by 0.18-$muhbox m$CMOS process, the partition factors derived from the physical model are consistent with the extracted parameters, and the model can simulate precisely the inductor characteristics including the asymmetric admittances over a wide frequency rang beyond the self-resonant frequency without fitting parameters.     

A simple parameter extraction method of spiral on-chip inductors

Accurate measurement and parameter extraction for spiral inductors are very important in monolithic microwave integrated circuit (MMIC) design. In this paper, we have proposed an easy and simple model parameter extraction method of wide-band on-chip inductor. The simple extraction methodology is applied to extract parameters from the measured S-parameters of spiral inductors fabricated with 0.18-/spl mu/m CMOS technology. Model prediction shows excellent agreement with the measured data over a wide frequency region. Also, the model can be easily integrated in SPICE-compatible simulators because all the elements are frequency independent. This method will provide practical and useful circuit parameters for MMIC design.     

双层螺旋RF MEMS电感的模拟与设计

分析了双层螺旋电感的等效电路模型,研究了一种与传统CMOS工艺兼容的MEMS工艺,通过腐蚀电感结构下的硅衬底使电感悬空.利用HFSS软件对一些双层螺旋微电感进行了模拟,模拟结果表明,相比传统单层电感,双层电感可以减少60%的芯片面积,10nH的电感也只需要很小的面积,经过MEMS后处理的双层螺旋电感的最大Q值都超过了20.     

High-Q factor three-dimensional inductors

In this paper, the great flexibility of three-dimensional (3-D) monolithic-microwave integrated-circuit technology is used to improve the performance of on-chip inductors. A novel topology for high-Q factor spiral inductor that can be implemented in a single or multilevel configuration is proposed. Several inductors were fabricated on either silicon substrate (/spl rho/ = 30 /spl Omega/ /spl middot/ cm) or semi-insulating gallium-arsenide substrate demonstrating, more particularly, for GaAs technology, the interest of the multilevel configuration. A 1.38-nH double-level 3-D inductor formed on an Si substrate exhibits a very high peak Q factor of 52.8 at 13.6 GHz and a self-resonant frequency as high as 24.7 GHz. Our 4.9-nH double-level GaAs 3-D inductor achieves a peak Q factor of 35.9 at 4.7 GHz and a self-resonant frequency of 8 GHz. For each technology, the performance limits of the proposed inductors in terms of quality factor are discussed. Guidelines for the optimum design of 3-D inductors are provided for Si and GaAs technologies.