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1.
在硅基OLED微显示器中,为了解决很小的像素驱动电流的难题,论文提出了一种像素电路。此像素电路由2个PMOS、2个NMOS、1个存储电容、1个OLED和4根信号线组成。并且利用HSPICE基于TSMC 0.35μm CMOS 5V工艺的参数进行了仿真验证。在此像素电路中,当OLED发光时流过OLED的电流是恒定的,并且通过控制OLED的发光时间来实现不同的灰度。此像素电路完全由数字信号控制,能实现精确的灰度调节。通过6个子场,实现了21级灰度,进而论证了实现64级灰度(0~63)的可能性。当OLED发光时,流过的恒定电流是35.3nA。  相似文献   

2.
设计了一款用于驱动分辨率为800×600的OLED微显示器的驱动芯片,利用10位的DAC将数字视频信号转成模拟信号,然后经过两个8位DAC实现数据的偏压和增益调整,可以适应微显示器在不同环境下对亮度和对比度的需要。像素电路采用了改进型的电压型驱动方式,能够在较宽的OLED公共阴极电压范围内维持很大的电流比率。该电路采用0.35μm 2P4M混合信号工艺完成了设计,进行了流片验证,已在芯片表面成功制作了OLED阵列,实现了微显示器的静态和动态画面显示,微显示器亮度可达11 000cd/m2,在此条件下,对比度可达到10 000∶1。  相似文献   

3.
双面显示OLED     
《液晶与显示》2005,20(2):144
台湾友达光电开发了双面不同图像动态显示的有源OLED。该OLED屏的厚度为1.8mm,正面显示屏为5cm(2in),背面显示屏为3.8cm(1.5in),像素密度为143ppi。这种显示器最适合用于超薄型折叠式手机显示。  相似文献   

4.
《液晶与显示》2004,19(2):111
英国MED公司开发了2 .8mm×3.8mm超小型OLED电视。在CMOS阵列基板上制造高分子LED器件,像素为1 92 0 0个,其功耗为LCD的1 /1 0~1 /40 ,器件的价格为1 0美元/块超小型OLED电视  相似文献   

5.
报道了一种采用UHV/CVD锗硅工艺和CMOS工艺流程在SOI衬底上制作的横向叉指状Si0.7Ge0.3/Si p-i-n光电探测器.测试结果表明:其工作波长范围为0.7~1.1μm,在峰值响应波长为0.93μm,响应度为0.38A/W.在3.0V的偏压下,其暗电流小于1nA,寄生电容小于1.0pF,上升时间为2.5ns.其良好的光电特性以及与CMOS工艺的兼容性,为研制能有效工作于近红外光的高速、低工作电压硅基光电集成器件提供了一种新的尝试,在高速光信号探测等应用中有一定的价值.  相似文献   

6.
报道了一种采用UHV/CVD锗硅工艺和CMOS工艺流程在SOI衬底上制作的横向叉指状Si0.7Ge0.3/Si p-i-n光电探测器.测试结果表明:其工作波长范围为0.7~1.1μm,在峰值响应波长为0.93μm,响应度为0.38A/W.在3.0V的偏压下,其暗电流小于1nA,寄生电容小于1.0pF,上升时间为2.5ns.其良好的光电特性以及与CMOS工艺的兼容性,为研制能有效工作于近红外光的高速、低工作电压硅基光电集成器件提供了一种新的尝试,在高速光信号探测等应用中有一定的价值.  相似文献   

7.
报道了一种采用 U HV/CVD锗硅工艺和 CMOS工艺流程在 SOI衬底上制作的横向叉指状 Si0 .7Ge0 .3/Si p- i-n光电探测器 .测试结果表明 :其工作波长范围为 0 .7~ 1.1μm,在峰值响应波长为 0 .93μm,响应度为 0 .38A/W.在3.0 V的偏压下 ,其暗电流小于 1n A,寄生电容小于 1.0 p F,上升时间为 2 .5 ns.其良好的光电特性以及与 CMOS工艺的兼容性 ,为研制能有效工作于近红外光的高速、低工作电压硅基光电集成器件提供了一种新的尝试 ,在高速光信号探测等应用中有一定的价值  相似文献   

8.
季渊  王成  冉峰  李天  刘万林 《液晶与显示》2016,31(6):563-568
OLED(organic light-emitting diode,OLED)微显示器长时间工作在高对比度、高亮度的状态下,OLED像素衰退不一致,发光亮度衰退也不一致,会产生残影现象。因此,提出了一种改进的电流型PWM像素驱动电路,保持了对OLED像素衰退补偿效果,同时可以读出OLED阳极电压,计算得到OLED衰退信息,以便于对OLED亮度衰退进行有效的补偿。文章中分析了改进的电流型PWM驱动电路结构,及其对OLED衰退补偿和亮度补偿的原理。通过模拟仿真,得到几个影响OLED衰退补偿效果的关键参数。当OLED像素衰退电阻Roled小于40 MΩ时,该电流型PWM驱动电路电流衰退度与传统2T1C驱动电路相比,只为其衰退度的50%。  相似文献   

9.
陆超  冉峰  徐美华 《电视技术》2004,(12):44-48
描述了一种内置SRAM的640×480像素矩阵OLED-on-silicon单色微显示电路的设计.像素电流12 nA~1.6μA可调.每个像素点面积不超过400 μm2,信号最大扫描频率30 MHz.采用chartered CMOS 0.35μm 18 V高压工艺仿真设计,成功实现了OLED技术和CMOS工艺的结合.  相似文献   

10.
使用华润上华(CSMC)0.5微米标准CMOS工艺实现了320×240像素硅基有机发光(OLED-on-Silicon)驱动电路。驱动电路集成了4位D/A转换器,实现16级灰度。提出了一种能够实现OLED微显示要求的极小电流驱动的3管电压控制型像素驱动电路。D/A转换器与像素驱动电路均以PMOS晶体管组成。OLED像素驱动中的传输门与电容器能够用来对D/A转换器的输出进行取样。在OLED像素驱动电路中加入一个额外的PMOS管,可以控制D/A转换器只驱动开启的一行,以降低芯片功耗。驱动电路可以正确的工作在50Hz帧频状态下,并给出了最终的电路版图。单个像素面积28.4μm×28.4μm,整个显示区域面积为10.7mm×8.0mm(对角线尺寸为0.52英寸)。测量的像素灰度电压波形表明驱动电路功能正确,测量芯片功耗为350mW左右。  相似文献   

11.
A liquid-crystal-on-silicon microdisplay based on a 1024×768 two-dimensional pixel array fabricated in a digital 0.35-μm CMOS process displays images with a color depth of 8 bits per color. The pixel pitch is 12 μm and the total chip area is 214 mm2. Pixel brightness is controlled by modulating the pulsewidth of the pixel voltage drive signal with an in-pixel analog pulsewidth modulation (PWM) circuit which utilizes human optic nerve spatio-temporal averaging to eliminate comparator offset. The 16 million transistor chip displays images at a maximum rate of 85 Hz and has a power dissipation of 200 mW from a single 3.3-V supply  相似文献   

12.
A 320×240 pixel organic-light-emitting-diode-on-silicon (OLEDoS) driving circuit is implemented using the standard 0.5 μm CMOS process of CSMC. It gives 16 gray scales with integrated 4 bit D/A converters. A three-transistor voltage-programmed OLED pixel driver is proposed, which can realize the very small current driving required for the OLEDoS microdisplay. Both the D/A converter and the pixel driver are implemented with pMOS devices. The pass-transistor and capacitance in the OLED pixel driver can be used to sample the output of the D/A converter. An additional pMOS is added to OLED pixel driver, which is used to control the D/A converter operating only when one row is on. This can reduce the circuit's power consumption. This driving circuit can work properly in a frame frequency of 50 Hz, and the final layout of this circuit is given. The pixel area is 28.4×28.4 μm2 and the display area is 10.7×8.0 mm2 (the diagonal is about 13 mm). The measured pixel gray scale voltage shows that the function of the driver circuit is correct, and the power consumption of the chip is about 350 mW.  相似文献   

13.
硅基液晶(Liquid Crystal on Silicon)显示器是一种反射式液晶显示器,其周边驱动器和有源像素矩阵使用CMOS技术制作在单晶硅上,并以该晶片为基底封装液晶盒,因而拥有小尺寸和高显示分辨率的双重特性。详细讨论了LCoS显示器的结构和用途,展示了LCoS显示芯片的实际设计结果及其设计方法。  相似文献   

14.
This work experimented on the TEOLED (Top-emitting Organic Light-Emitting Diode) using the TiN (titanium nitride) as the anode for the microdisplays based on the CMOS (Complementary Metal–Oxide–Semiconductor) integrated circuit substrate. TiN is a hard, dense, and refractory material with steady physical and chemical characteristics. It is proved in this work to be a good candidate for the anode of the TEOLED due to its good electrical and optical characteristics. A SXGA resolution OLED microdisplay is designed and developed with TiN anodes. The luminance reaches beyond 2700 cd/m2 when the operating voltage is below 5 V. The power efficiency reaches 13 lm/W at the luminance of 1000 cd/m2. As a conclusion, TiN can be used to solve the incompatibility problem between the CMOS process and the OLED process. By fabricating the top metal coated with TiN as the TEOLED anodes in the standard CMOS process, it is not necessary to build a new separate post-process line for the anodes in the mass manufacture. Hence, the process step for the CMOS-based OLED microdisplay will be simplified, huge cost will be saved and the production yield will also be improved.  相似文献   

15.
A 32 /spl times/ 16 liquid-crystal-on-silicon (LCOS) backplane with novel frame buffer pixels is designed and fabricated using the AMI Semiconductor's 0.5-/spl mu/m double-poly triple-metal CMOS process. The three novel pixel circuits described herein increase the brightness of an XGA LCOS microdisplay by at least 36% without sacrificing image contrast ratio. The increase of brightness is attributed to maximizing overall image view time, allowing an image to be displayed at full contrast while the next image is buffered onto the backplane. The new circuits achieve this by removing charge sharing and charge inducement problems shown in previously proposed frame buffer pixel circuits. Voltages on the pixel electrodes measured through rail-to-rail operational amplifiers with negative feedback vary from 0 to 4.25 V (6-V power source). All data voltage levels remain constant over a frame time with less than 1% drop, thus ensuring maximum contrast ratio. Modeling and experimental measurement on the fabricated chip show that these pixel circuits outperform all others to date based on storage time, data storage level, and potential for highest contrast ratio with maximum brightness.  相似文献   

16.
The flip chip bonding process is optimized by varying the bonding pressure, temperature, and time. The 68times68 mid wave infrared (MWIR) LED array was hybridized onto Si-CMOS driver array with same number of pixels. Each pixel has two indium bumps, one for cathode and another for anode. Both LED array and CMOS drivers have 15-mum-square Indium bump contact pads. We used Karl Suss FC150 flip chip machine for bonding of CMOS driver array onto LED array. From the LED current-voltage characteristics, it is concluded that the optimized flip chip bonding process results in uniform contact and very low contact resistance. Both electrical and optical characteristics of LED array after flip chip bonding are presented.  相似文献   

17.
Kim  M. Jin  G.H. 《Electronics letters》2009,45(8):421-423
Integrating circuits into organic light emitting diode displays requires fabrication of polycrystalline silicon (poly-Si) based thin-film transistors (TFTs) on glass substrates. A novel ITO/AlNdN/Al contact process has been developed for the pixel step. In metallisation, ITO/Al interconnection is metallurgically undesirable. An AlNdN layer is selected for a pixel material and ITO/AlNdN/Al structure is applied to the pixel line. Reported is the feasibility for the multilevel ITO/AlNdN/Al contact, which can make the poly-Si TFTs competitive in the market.  相似文献   

18.
《Organic Electronics》2014,15(8):1822-1827
A patterning scheme for poly(3,4-ethylenedioxythio-phene):poly(styrenesulfonate) (PEDOT:PSS) is reported. With a silver interlayer, the conductive PEDOT:PSS film can be patterned down to micrometer scales by traditional photolithography, and this patterning scheme can be applied on large-area flexible substrates. Through systematical investigations, the patterning processes have no obvious influence on both the bulk and surface properties of PEDOT:PSS films. Efficient organic light emitting diodes (OLEDs) are realized based on this patterned PEDOT:PSS anode, and they show comparable performance to those devices with an indium tin oxide (ITO) anode. High-resolution OLED pixel arrays are also demonstrated. Our interlayer approach here has an advantage of patterning PEDOT:PSS with high resolution and large scale, and it is also compatible with traditional photolithographic processes which substantially save the capital cost. Results indicate that the photographically patterned conductive PEDOT:PSS film becomes a promising candidate for eletrical eletrode material in organic electronic applications.  相似文献   

19.
以复杂可编程逻辑器件(CPLD))作为QVGA微显示视频核心控制单元,搭建LCOS微显示芯片驱动系统.通过对CPLD编程产生与微显示芯片相匹配的控制信号与显示数据信号,实现对显示芯片的驱动控制,向微显示芯片输入16帧顺序16级灰度电压测试信号以测试像素的灰度响应.测试结果表明电压灰度响应正确,通过控制行列坐标的方式产生测试图像,驱动微显示芯片显示出测试图像,验证了LCOS微显示芯片显示功能的正确性,显示效果良好,视频刷新频率可达到60 Hz.  相似文献   

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