共查询到19条相似文献,搜索用时 62 毫秒
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高斜效率高功率850nm氧化限制型垂直腔面发射激光器 总被引:2,自引:2,他引:2
报道了MOCVD生长的高性能850nm氧化限制型垂直腔面发射激光器.研制出的氧化直径为9μm的激光器25℃时的斜效率和阈值电流分别为0.82mW/mA和2.59mA,激光器在23mA时输出16mW最大光功率.氧化直径为5μm的激光器25℃时的最小阈值电流为570μA,其最大饱和光功率为5.5mW. 相似文献
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为了在制作垂直腔面发射激光器(VCSEL)时选择合适的氧化孔径尺寸,以获得较好的光束质量和较高的输出功率,对具有不同氧化孔径的单管器件的热特性进行了实验研究。通过控制氧化时间,制作了氧化孔径分别为415、386、316μm的单管器件,台面直径和P型接触电极直径均为450μm和400μm。针对3种器件在室温连续工作条件下不同的输出特性,对它们的热阻进行了实验测量,发现氧化孔径越小时器件热阻越大。通过对比电流、波长及温度的关系,得到了由电流引起的自热效应给3种器件带来的温升情况。注入电流为1A时,氧化孔径为415μm的器件温度为32.4℃,氧化孔径为386μm的器件温度为35.2℃,氧化孔径为316μm时,器件的温度高达76.4℃。 相似文献
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用于垂直腔面发射激光器的GaAs/AlGaAs的ICP刻蚀工艺研究 总被引:1,自引:0,他引:1
采用电感耦合等离子体(ICP)刻蚀设备对应用于垂直腔面发射激光器的GaAs/AlGaAs材料进行刻蚀工艺研究。该刻蚀实验采用光刻胶作为刻蚀掩模,Cl2/BCl3作为刻蚀工艺气体,通过实验分析总结了ICP源功率、射频偏压功率和腔体压强对GaAs/AlGaAs材料和掩模刻蚀速率的影响。利用扫描电子显微镜观察不同参数条件对样品侧壁垂直度和底部平坦度的影响。最终在保证高刻蚀速率的前提下,通过调整优化各工艺参数,得到了侧壁光滑、底部平坦的圆台结构。 相似文献
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Ledentsov N.N. Hopfer F. Bimberg D. 《Proceedings of the IEEE. Institute of Electrical and Electronics Engineers》2007,95(9):1741-1756
We report on recent progress in high-speed quantum-dot (QD) vertical-cavity surface-emitting lasers (VCSELs). Advanced types of QD media allow an ultrahigh modal gain, avoid temperature depletion, and gain saturation effects. Temperature robustness up to 100degC for 0.96-1.25 mum range devices is realized in the continuous wave (cw) regime. An open eye 20 Gb/s operation with bit error rates better than 10-12 has been achieved in a temperature range 25degC - 85degC without current adjustment. A different approach for ultrahigh-speed operation is based on a combination of the VCSEL section, operating in the CW mode with an additional section of the device, which is electrooptically modulated under a reverse bias. The tuning of a resonance wavelength of the second section, caused by the electrooptic effect, affects the transmission of the system. The approach enables ultrahigh-speed signal modulation. 60 GHz electrical and ~35 GHz optical (limited by the photodetector response) bandwidths are realized. 相似文献
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Ki Soo Chang Young Min Song Yong Tak Lee 《Photonics Technology Letters, IEEE》2006,18(21):2203-2205
A novel method for fabricating microlens-integrated vertical-cavity surface-emitting lasers (VCSELs) by selective oxidation of composition-graded digital alloy AlGaAs was developed. Due to the simultaneous formation of a microlens and oxide aperture via single-step oxidation, self-aligned microlens-integrated VCSELs could be fabricated using standard intracavity-contacted VCSEL processing without additional process steps. The output beam from the oxide-buried and oxide-removed AlGaAs microlens-integrated VCSELs was strongly focused to a beam radius of 3.7 and 3.5 mum at a distance of about 25 and 15mum, respectively, from the surface of the VCSEL 相似文献
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ZHANG Yan PENG Biao LIU Guang-yu SUN Yan-fang LI Te GUI Jin-Jiang NING Yong-qiang QIN Li LIU Yun WANG Li-jun 《光机电信息》2006,23(12):27-34
Vertical-cavity surface-emitting lasers (VCSELs) have entered into commercial market over the last few years. The paper describes the progress of visible (red) VCSELs in particular. The Basic experimental structures are reviewed, with emphasis on distributed Bragg reflectors, gain media, as well as detuning.lt also points out some technical issues that must still be resolved. Finally, the polarization of VCSELs devices is discussed. 相似文献
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理论分析了980nm高功率垂直腔面发射激光器(VCSEL)的器件特性与其分布布拉格反射镜(DBR)反射率的依赖关系,并计算了具有不同有源区直径的VCSEL的输出特性.分析了具有不同有源区直径的VCSEL在不同DBR反射率条件下的连续输出特性曲线,发现DBR反射率的改变会对有源区直径不同的VCSEL产生不同程度的影响.为了验证理论分析的结果,进行了器件测试实验.实验结果表明,有源区直径为500μm的VCSEL,当其N-DBR反射率分别为99.7%及99.2%时,在连续注入电流为6A时,其输出功率分别为2.01W和2.09W;而有源区直径为200μm的VCSEL,当N-DBR反射率为99.7%及99.2%时,连续注入电流为3A时,其输出功率分别为0.64W及1.12W.器件测试结果有效验证了理论分析的结论. 相似文献
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Visible Vertical-cavity Surface-emitting Lasers (VCSELs) have been designed and fabricated by using metalorganic vapor phase epitaxy. Using the 8λ optical cavities with 3 quan tum wells in A1GaInP/AlGaAs VCSEL's to reduce the drift leakage current and enhance the model gain, the device can operate continuous wave at wavelength of 670nm. For better performance, a misoriented (100) substrate (6~10° to (110)) has been used to reduce the ordering of AlGaInP. However, as the angle of misorientation increased, the symmetry of the structure became worse. This made it difficult to achieve little aperture device. By using 45° rotated selective oxidation method, a little aperture (1 × 1μm2) device with low threshold of 0.25mA can operate continuous wave at room temperature. 相似文献
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We study the dynamics of vertical-cavity surface-emitting lasers (VCSELs) with direct current modulation in the framework of a model for index-guided VCSELs that takes into account two orthogonal linear polarizations. We analyze the effect of current modulation near the polarization switching (PS) of type I, from the high to the low frequency polarization, and near the PS of type II, from the low to the high frequency polarization. We find that the oscillations of the total power are as those of a single-mode laser, unaffected by the underlaying polarization coexistence or polarization competition. We also study the small-signal modulation response in the Fourier domain, for modulation dc values near the PS point. Close to type I PS the response of the total power as well as the response of the orthogonal polarizations has the same functional dependency on the modulation frequency, and can be fitted by the response function of a single-mode laser. Close to type II PS, polarization competition is a significant process at low modulation frequencies. The polarization-resolved modulation response displays features at low frequencies that are not present in the response of the total power, which is as that of a single-mode laser. The dynamics becomes increasingly complex as the modulation amplitude grows, and there is multistability of solutions. 相似文献
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We investigate the modal characteristics of a 1300-nm InP-based photonic-crystal (PC) vertical-cavity surface- emitting diode laser. To this aim, we apply the plane-wave admittance method and analyze a broad range of PC parameters such as hole etching depth, distance between the holes, and their diameters. We determine a range of technologically feasible PC parameters providing an optimal laser performance. 相似文献