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1.
以典型强迫风冷电子设备为例,通过将热测试的试验数据与电子设备结构优化设计支撑软件热分析子系统仿真出的结果相比较,进一步验证电子设备结构优化设计支撑软件热分析模块的分析精度,检验其在工程实践中的可靠性,为工程技术人员提供可参考的资料和数据。  相似文献   

2.
电子设备热设计、热评估实施要求   总被引:1,自引:1,他引:0  
介绍了对电子设备进行热设计、热评估的必要性,指出对电子设备进行可靠性热设计,实施有效的热控制是提高设备工作可靠性的关键措施;同时简明阐述了热设计的概念和热设计的主要内容和实施要求,并介绍了热评估的必要性和对保障电子设备可靠性的实用意义。  相似文献   

3.
为了解决航天器DC/DC变换器的热可靠性问题,利用有限元分析软件ANSYS对实际的航天器DC/DC变换器进行热仿真分析,得到了其内部的温度分布特性。并对其进行了红外成像测试实验,通过红外成像测试结果与仿真分析结果对比分析,验证了热仿真的准确性。使用有限元分析方法为航天器DC/DC变换器合理热设计提供了依据,也为同类电子设备的热设计提供了一种思路。  相似文献   

4.
随着电子元器件的高度集成化及加工制造工艺手段的不断提高,电子设备功率密度越来越大,对电子设备进行热设计在电子设备设计过程中越来越重要.该文首先介绍了电子设备热设计的层次、研究内容和任务,然后具体介绍了选择冷却方式的准则,并根据准则选取了合理的冷却方式,设计了散热系统结构,并通过数值模拟计算得到了设备内部的热流场和温度分...  相似文献   

5.
电子设备热分析技术研究   总被引:1,自引:0,他引:1  
加强对电子设备热分析技术的研究,能够实现对设备的有效热控制,从而保障其使用性能和寿命。文中论述了热分析技术的两种方法,即解析法和数值法的解题思路和步骤,并对热分析软件在电子设备设计中的运用进行了研究探索,结合设备级热分析结果进行了验证,达到了较高的精度,满足工程需求。  相似文献   

6.
本文是针对于电子设备的热属性测试和热设计优化建立一个可靠性应用研发平台。平台分为热测试和热设计两个模块,热测试半导体器件的热学属性的精确测量和外围散热设备的选型和验证,并结合热设计部分,保证仿真结果的准确性,并可进行结构和选型的优化,平台囊括电力电子产品化过程中热可靠性设计的所有环节。  相似文献   

7.
为了提高机载电子设备的冷却散热性能,保证设备可靠稳定工作,采用热仿真方法,对某机载电子设备进行了热设计.根据设备结构特点,提出了多种不同的设计方案,并对其进行了对比分析.综合考虑设备散热效果及可维修性,确定了最优的设计方案,实现了对某机载电子设备的热设计.该热设计方案已随电气设计和结构设计一起通过了各项验证试验,使用情况良好,同时,也为同类型机载电子设备热设计提供了较大的参考价值.  相似文献   

8.
电子设备的热设计   总被引:3,自引:0,他引:3  
热设计是电子设备可靠性的设计要求。分析了热产生的机理,并提出了电子设备的热设计方法。  相似文献   

9.
MCM热分析和热设计技术   总被引:7,自引:0,他引:7  
多芯式组件以及其它高功率器件的热分析和热设计技术,是微电子设备可靠性设计的主要技术,文中论述了多芯片组件热分析和热设计的方法,并介绍了这一领域的最新发展动态。  相似文献   

10.
电子设备热仿真分析及软件应用   总被引:4,自引:0,他引:4  
阐述了电子设备热分析重要性并简单介绍了常用热分析软件,利用 FLOTHERM软件对一电子设备进行热分析,在此基础上对该电子设备的热控制进行改进设计,通过数值仿真获得满足热控制要求的优化设计参数,以达到工程要求;并将这一模型用FLOTHERM软件进行热分析的结果与用Icepak软件计算结果进行对比,指出两种软件在进行电子设备热设计时的差异.  相似文献   

11.
A simulation method for the thermal analysis of InAlAs/InGaAs/InP mid--infrared quantum cascade lasers (QCLs) based on finite -- element method (FEM) is presented. The thermal distribution of the QCLs on substrate--side or epilayer--side mounting forms is simulated and the results are compared. Results show that the epilayer--side mounting form has much better heat dissipation capability than the substrate--side mounting.  相似文献   

12.
A simulation method for the thermal analysis of InAlAs/InGaAs/InP mid-infrared quantum cascade lasers (QCLs) based on finite-element method (FEM) is presented. The thermal distribution of the QCLs on substrate-side or epilayer-side mounting forms is simulated and the results are compared. Results show that the epilayer-side mounting form has much better heat dissipation capability than the substrate-side mounting.  相似文献   

13.
工作区-背景区空调(TAC)系统   总被引:1,自引:0,他引:1  
综述了工作区-背景区空调(TAC)系统的构成、形式;介绍了TAC系统能够改善室内空气品质,提高热舒适性和居住者满意程度,减少能耗,降低建筑物层高等优点;指出我国研究和发展TAC技术应解决的问题。  相似文献   

14.
The thermal stability of the Cu/Cr/Ge/Pd/n+-GaAs contact structure was evaluated. In this structure, a thin 40 nm layer of chromium was deposited as a diffusion barrier to block copper diffusion into GaAs. After thermal annealing at 350°C, the specific contact resistance of the copper-based ohmic contact Cu/Cr/Ge/Pd was measured to be (5.1 ± 0.6) × 10−7 Ω cm2. Diffusion behaviors of these films at different annealing temperatures were characterized by metal sheet resistance, X-ray diffraction data, Auger electron spectroscopy, and transmission electron microscopy. The Cu/Cr/Ge/Pd contact structure was very stable after 350°C annealing. However, after 400°C annealing, the reaction of copper with the underlying layers started to occur and formed Cu3Ga, Cu3As, Cu9Ga4, and Ge3Cu phases due to interfacial instability and copper diffusion.  相似文献   

15.
The so-called 3ω measurement technique (transient hot wire method) was established to determine the thermal conductivity of thin films. Measurements of standard substrates and films validate the found thermal conductivity values and agree with published, commonly accepted values. The method was successfully applied to determine the thermal conductivity of porous low-k dielectric materials using special test structure fabrication. The thermal conductivity of the porous low-k dielectrics thus measured is only between 7 and 13% of the thermal conductivity of thermally grown silicon dioxide.  相似文献   

16.
Al/Y2O3/n-Si/Al capacitors were irradiated by using a 60Co gamma ray source and a maximum dose up to 8.4 kGy. The effect of an annealing treatment performed at 600 or 900 °C on the yttrium oxide (Y2O3) films was investigated by XRD and Raman spectroscopy. High-frequency capacitance-voltage (C-V) and conductance-voltage (G-V) measurements as well as quasi-static measurements of the MOS structures were analysed. The annealing improves the crystalline state of the Y2O3 thin film material and decreases the values of the flat-band voltage and of the interface trap level density indicating an improvement of the electrical properties of the interface thin film-substrate. But at this interface, the formation of an yttrium-silicate layer was also evidenced. After gamma irradiation, the values of the flat-band voltage and of the interface trap level density related to the Al/Y2O3/n-Si/Al structure increase and especially for the structure made with the materials annealed at 900 °C for 1 h. In that case, the structure is very sensitive to a gamma irradiation dose up to 8.4 kGy.  相似文献   

17.
We investigated the phase formation and texture of nickel silicides formed during the reaction of 10 nm sputter deposited nickel with Si1−xCx epitaxial layers on Si(1 0 0) substrates, having a carbon content between 0 and 2.5 atomic percent. It was found that both the formation temperature as well as the texture of the metal-rich phases is influenced by the amount of carbon in the Si1−xCx layer. To determine the influence of the location of the carbon during the silicidation process we also investigated the reaction of 10 nm nickel on Si(1 0 0) substrates, where carbon was either alloyed in the nickel layer or deposited as an interlayer at the interface between the nickel and the substrate. Depending on the location of the carbon, a different thermal stability of the layer was found.  相似文献   

18.
DC/DC电源模块的有限元热分析   总被引:3,自引:1,他引:2  
为解决电源模块的热可靠性问题,利用有限元热分析软件ANSYS对其进行热分析,得到整个模块的温度场分布情况;分析了模块中各生热元件的温升及其之间的热耦合情况;根据热分析结果提出热设计方法.最后,对模块各部分进行重新布局,证实了重新布局后的模块就其热可靠性而言更为合理.  相似文献   

19.
An Au/n–InP/In diode has been fabricated in the laboratory conditions and the current–voltage (IV) and capacitance–voltage (CV) characteristics of the diode have been measured in room temperature. In order to observe the effect of the thermal annealing, this diode has been annealed at temperatures 100 and 200 °C for 3 min in N2 atmosphere. The characteristic parameters such as leakage current, barrier height and ideality factor of this diode have been calculated from the forward bias IV and reverse bias CV characteristics as a function of annealing temperature. Also the rectifying ratio of the diode is evaluated for as-deposited and annealed diode.  相似文献   

20.
近年来,散热已经成为电子器件的一个重要课题,其中热界面材料受到人们的广泛重视。为了进一步改进热界面材料的性能,采用分子动力学方法计算了碳纳米管与石墨烯复合结构——石墨烯柱的热学特性。结果表明,结构的热学性能可以通过石墨烯层间的纳米管数目加以调节,随着纳米管数目的增多,结构的热导增加并逐渐达到一个饱和值,该值比石墨烯结构的热导大了约50%。这个结果为热界面材料的进一步优化提供了重要的参考。  相似文献   

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