共查询到20条相似文献,搜索用时 62 毫秒
1.
2.
电子设备热设计、热评估实施要求 总被引:1,自引:1,他引:0
介绍了对电子设备进行热设计、热评估的必要性,指出对电子设备进行可靠性热设计,实施有效的热控制是提高设备工作可靠性的关键措施;同时简明阐述了热设计的概念和热设计的主要内容和实施要求,并介绍了热评估的必要性和对保障电子设备可靠性的实用意义。 相似文献
3.
4.
随着电子元器件的高度集成化及加工制造工艺手段的不断提高,电子设备功率密度越来越大,对电子设备进行热设计在电子设备设计过程中越来越重要.该文首先介绍了电子设备热设计的层次、研究内容和任务,然后具体介绍了选择冷却方式的准则,并根据准则选取了合理的冷却方式,设计了散热系统结构,并通过数值模拟计算得到了设备内部的热流场和温度分... 相似文献
5.
电子设备热分析技术研究 总被引:1,自引:0,他引:1
加强对电子设备热分析技术的研究,能够实现对设备的有效热控制,从而保障其使用性能和寿命。文中论述了热分析技术的两种方法,即解析法和数值法的解题思路和步骤,并对热分析软件在电子设备设计中的运用进行了研究探索,结合设备级热分析结果进行了验证,达到了较高的精度,满足工程需求。 相似文献
6.
本文是针对于电子设备的热属性测试和热设计优化建立一个可靠性应用研发平台。平台分为热测试和热设计两个模块,热测试半导体器件的热学属性的精确测量和外围散热设备的选型和验证,并结合热设计部分,保证仿真结果的准确性,并可进行结构和选型的优化,平台囊括电力电子产品化过程中热可靠性设计的所有环节。 相似文献
7.
为了提高机载电子设备的冷却散热性能,保证设备可靠稳定工作,采用热仿真方法,对某机载电子设备进行了热设计.根据设备结构特点,提出了多种不同的设计方案,并对其进行了对比分析.综合考虑设备散热效果及可维修性,确定了最优的设计方案,实现了对某机载电子设备的热设计.该热设计方案已随电气设计和结构设计一起通过了各项验证试验,使用情况良好,同时,也为同类型机载电子设备热设计提供了较大的参考价值. 相似文献
8.
电子设备的热设计 总被引:3,自引:0,他引:3
丁小东 《电子产品可靠性与环境试验》2000,(4):15-17
热设计是电子设备可靠性的设计要求。分析了热产生的机理,并提出了电子设备的热设计方法。 相似文献
9.
MCM热分析和热设计技术 总被引:7,自引:0,他引:7
多芯式组件以及其它高功率器件的热分析和热设计技术,是微电子设备可靠性设计的主要技术,文中论述了多芯片组件热分析和热设计的方法,并介绍了这一领域的最新发展动态。 相似文献
10.
11.
HEYou-jun ZHANGYong-gang LIAi-zhen 《半导体光子学与技术》2003,9(3):158-161
A simulation method for the thermal analysis of InAlAs/InGaAs/InP mid--infrared quantum cascade lasers (QCLs) based on finite -- element method (FEM) is presented. The thermal distribution of the QCLs on substrate--side or epilayer--side mounting forms is simulated and the results are compared. Results show that the epilayer--side mounting form has much better heat dissipation capability than the substrate--side mounting. 相似文献
12.
A simulation method for the thermal analysis of InAlAs/InGaAs/InP mid-infrared quantum cascade lasers (QCLs) based on finite-element method (FEM) is presented. The thermal distribution of the QCLs on substrate-side or epilayer-side mounting forms is simulated and the results are compared. Results show that the epilayer-side mounting form has much better heat dissipation capability than the substrate-side mounting. 相似文献
13.
14.
Kartika Chandra Sahoo Chun-Wei Chang Yuen-Yee Wong Tung-Ling Hsieh Edward Yi Chang Ching-Ting Lee 《Journal of Electronic Materials》2008,37(6):901-904
The thermal stability of the Cu/Cr/Ge/Pd/n+-GaAs contact structure was evaluated. In this structure, a thin 40 nm layer of chromium was deposited as a diffusion barrier
to block copper diffusion into GaAs. After thermal annealing at 350°C, the specific contact resistance of the copper-based
ohmic contact Cu/Cr/Ge/Pd was measured to be (5.1 ± 0.6) × 10−7 Ω cm2. Diffusion behaviors of these films at different annealing temperatures were characterized by metal sheet resistance, X-ray
diffraction data, Auger electron spectroscopy, and transmission electron microscopy. The Cu/Cr/Ge/Pd contact structure was
very stable after 350°C annealing. However, after 400°C annealing, the reaction of copper with the underlying layers started
to occur and formed Cu3Ga, Cu3As, Cu9Ga4, and Ge3Cu phases due to interfacial instability and copper diffusion. 相似文献
15.
The so-called 3ω measurement technique (transient hot wire method) was established to determine the thermal conductivity of thin films. Measurements of standard substrates and films validate the found thermal conductivity values and agree with published, commonly accepted values. The method was successfully applied to determine the thermal conductivity of porous low-k dielectric materials using special test structure fabrication. The thermal conductivity of the porous low-k dielectrics thus measured is only between 7 and 13% of the thermal conductivity of thermally grown silicon dioxide. 相似文献
16.
Al/Y2O3/n-Si/Al capacitors were irradiated by using a 60Co gamma ray source and a maximum dose up to 8.4 kGy. The effect of an annealing treatment performed at 600 or 900 °C on the yttrium oxide (Y2O3) films was investigated by XRD and Raman spectroscopy. High-frequency capacitance-voltage (C-V) and conductance-voltage (G-V) measurements as well as quasi-static measurements of the MOS structures were analysed. The annealing improves the crystalline state of the Y2O3 thin film material and decreases the values of the flat-band voltage and of the interface trap level density indicating an improvement of the electrical properties of the interface thin film-substrate. But at this interface, the formation of an yttrium-silicate layer was also evidenced. After gamma irradiation, the values of the flat-band voltage and of the interface trap level density related to the Al/Y2O3/n-Si/Al structure increase and especially for the structure made with the materials annealed at 900 °C for 1 h. In that case, the structure is very sensitive to a gamma irradiation dose up to 8.4 kGy. 相似文献
17.
K. De Keyser B. De SchutterC. Detavernier V. MachkaoutsanM. Bauer S.G. ThomasJ. Jordan Sweet C. Lavoie 《Microelectronic Engineering》2011,88(5):536-540
We investigated the phase formation and texture of nickel silicides formed during the reaction of 10 nm sputter deposited nickel with Si1−xCx epitaxial layers on Si(1 0 0) substrates, having a carbon content between 0 and 2.5 atomic percent. It was found that both the formation temperature as well as the texture of the metal-rich phases is influenced by the amount of carbon in the Si1−xCx layer. To determine the influence of the location of the carbon during the silicidation process we also investigated the reaction of 10 nm nickel on Si(1 0 0) substrates, where carbon was either alloyed in the nickel layer or deposited as an interlayer at the interface between the nickel and the substrate. Depending on the location of the carbon, a different thermal stability of the layer was found. 相似文献
18.
19.
An Au/n–InP/In diode has been fabricated in the laboratory conditions and the current–voltage (I–V) and capacitance–voltage (C–V) characteristics of the diode have been measured in room temperature. In order to observe the effect of the thermal annealing, this diode has been annealed at temperatures 100 and 200 °C for 3 min in N2 atmosphere. The characteristic parameters such as leakage current, barrier height and ideality factor of this diode have been calculated from the forward bias I–V and reverse bias C–V characteristics as a function of annealing temperature. Also the rectifying ratio of the diode is evaluated for as-deposited and annealed diode. 相似文献