FPD

OLED能否成为中国FPD产业的一个机会?随着LCDTV在全球的热销,中国今年LCDTV市场规模将会达到1500万台左右,约占全球需求量的15%。但是,在这迅速增长的市场需求中占LCDTV绝对价值的面板,却看不到中国供应商的身影。     

价格、家庭娱乐、中国市场三大动能加持：2009年全球LCD TV达1．21亿台

受全球金融风暴影响,LCDTV产业链厂商如品牌厂、组装厂、零组件业者,对于2009年初LCDTV整体出货量产生疑虑,实际检视2009年全球LCDTV第一季出货量,与2008年同期相较．年增长率仍交出30％的佳绩．推测主因在于成熟市场消费者待在家中的时间变长．以及新兴市场对LCDTV需求持续激增。根据拓璞产业研究所研究员张乘维表示,随LCDTV需求的逐季增温．全球LCDTV出货量预估将从2009年第二季的2．701．6万台逐季攀升到第四季的3,740．3万台;由于上半年LCDTV超乎市场预期热销,预估下半年LCDTV出货年增长将稍稍放缓,     

背光源的发展趋势(续完)(第二部分)

侧重介绍了LCD背光源用的光源的功耗。除了荧光灯（FLs）外还介绍了场致发射显示器（FEDs）、发光二极管（LEDs）和有机发光二极管（OLEDs）的原理、特性及优缺点比较。讨论了一维光源（管状光源）和二维光源（面光源）在LCDTV中应用的可能性。管状光源分为冷阴极荧光灯（CCFLs）、外电极荧光灯（EEFLs）和热阴极荧光灯（HCFLs）。指出Philips照明公司的扫描型HCFLs用于背光源是改善LCDTV图像质量的一个方向。FEDs、OLEDs和LEDs都可作为二维背光源用于LCDTV中，但是目前只有LEDs被用于LCDTV中的BLU。     

三星数字电视一体机的技术特色

三星是全球最大LCDTV生产商和LCD面板制造商，2008年全年液晶电视销量达到2100万台，继2007年销售夺冠之后再次荣登全球销量第一的宝座。三星LCDTV产品更新换代的速度与推出LCDTV产品机型的数量令所有LCD厂商望尘莫及，仅仅在2008年下半年，     

液晶电视将驶入快行道

五月在美国Baltimore举办的“2003年信息显示展览会(SID2003)”发出了这样一个信息,未来几年LCDTV将发展迅速。LCD逐步从目前的商用为主,转向普通的消费类电子,其中以大屏幕的LCDTV最受推崇。iSuppli/StanfordResources预计LCD电视的销售量将呈爆炸性的增长,2002到2007年复合年增率将超过60%。     

2012中国LCD TV市场Smart TV表现成关键

2011年已接近尾声．中国LCDTV年销售量预估将增长13．5％，但与2009年的98．4％和2010年的43．9％增长率相比，已不可同日而语。台湾拓璞产业研究所上海子公司经理崔晶分析．中国LCDTV市场已进入成熟期，超高速增长荣景很难再现．预估2012年销售量为4．256万台，增长率仅将维持在12％。     

LED背光渐成主流

LED背光虚火过后,终有渐成主流之势! LED背光技术在液晶电视（LCDTV）领域成长最受瞩目,早先有市场调研机构预计今年全球LEDTV销量将比去年激增9倍,占整体LCDTV出货量的19％左右;近期又有机构抛出一份针对中国大陆市场的统计,预估2011年大陆LEDTV渗透率将达33．8％,2012年可望超越CCFLTV,成为市场主流。     

PLC810PG及其在液晶电视和LED路灯电源中的应用(中)

<正> 采用控制器PLC810PG的40英寸LCD TV电源采用控制器PLC810PG的40英寸LCDTV电源电路如图6所示。1.主要技术指标40英寸LCDTV电源主要参数如表2所示。2.电路工作原理(1)输入滤波器/PFC升压功率级:40英寸LCD TV电源输入电路和PFC升压变换器功率级如图     

中华液晶资讯网专栏

1CeBITASIA2003上的平面显示新产品9月18～20日在上海举办的CeBITASIA2003展会,吸引了中国大陆与台湾、日本、韩国等地的业内巨头争先赴会,各种新品层出不穷。在这次展会上,手机与LCDTV产品大放异彩,诸多厂家纷纷展示其相关的整机和零组件最新产品。韩国三星PDP(等离子)与LCDTV并重的策略得到充分体现,代表性的产品分别是63英寸的PDP电视和54英寸LCDTV。日本三洋则力图充分展示其在手机面板方面的研发成就,包括OLED、LTPSTFTLCD等新型面板,预示着手机行业正向彩色化方向发展。三星电子展出了最新的PDP电视产品系列,包…     

Philips推出Nexperia PNX5050 LCD TV解决方案

Philips公司推出两种Nexperia半导体系统解决方案，将会增强LCDTV的质量而同时加速下一代TV走向市场。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.